KR102886380B1 - 에칭 잔류물 제거용 조성물, 이의 사용 방법 및 용도 - Google Patents

에칭 잔류물 제거용 조성물, 이의 사용 방법 및 용도

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Publication number
KR102886380B1
KR102886380B1 KR1020227004396A KR20227004396A KR102886380B1 KR 102886380 B1 KR102886380 B1 KR 102886380B1 KR 1020227004396 A KR1020227004396 A KR 1020227004396A KR 20227004396 A KR20227004396 A KR 20227004396A KR 102886380 B1 KR102886380 B1 KR 102886380B1
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KR
South Korea
Prior art keywords
delete delete
acid
composition
composition comprises
alkanolamine
Prior art date
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Application number
KR1020227004396A
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English (en)
Korean (ko)
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KR20220035164A (ko
Inventor
라이쉥 선
릴리 왕
아이핑 우
이-치아 리
티안니우 첸
Original Assignee
버슘머트리얼즈 유에스, 엘엘씨
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 버슘머트리얼즈 유에스, 엘엘씨 filed Critical 버슘머트리얼즈 유에스, 엘엘씨
Publication of KR20220035164A publication Critical patent/KR20220035164A/ko
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Publication of KR102886380B1 publication Critical patent/KR102886380B1/ko
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/265—Carboxylic acids or salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3218—Alkanolamines or alkanolimines
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/273—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a delineation of conductive layers, e.g. by RIE
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Wood Science & Technology (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Materials Engineering (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Preventing Corrosion Or Incrustation Of Metals (AREA)
KR1020227004396A 2019-07-15 2020-07-14 에칭 잔류물 제거용 조성물, 이의 사용 방법 및 용도 Active KR102886380B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962874477P 2019-07-15 2019-07-15
US62/874,477 2019-07-15
PCT/US2020/041881 WO2021011515A1 (en) 2019-07-15 2020-07-14 Compositions for removing etch residues, methods of using and use thereof

Publications (2)

Publication Number Publication Date
KR20220035164A KR20220035164A (ko) 2022-03-21
KR102886380B1 true KR102886380B1 (ko) 2025-11-13

Family

ID=74209986

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227004396A Active KR102886380B1 (ko) 2019-07-15 2020-07-14 에칭 잔류물 제거용 조성물, 이의 사용 방법 및 용도

Country Status (7)

Country Link
US (1) US20220251480A1 (enExample)
EP (1) EP3999621A4 (enExample)
JP (1) JP7566003B2 (enExample)
KR (1) KR102886380B1 (enExample)
CN (1) CN114127230A (enExample)
TW (1) TWI850424B (enExample)
WO (1) WO2021011515A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114846177A (zh) 2019-12-20 2022-08-02 弗萨姆材料美国有限责任公司 Co/cu选择性湿蚀刻剂
TWI794010B (zh) * 2022-02-11 2023-02-21 南亞科技股份有限公司 製造半導體元件的方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002523546A (ja) 1998-08-18 2002-07-30 アーチ・スペシャルティ・ケミカルズ・インコーポレイテッド 非腐食性のストリッピングおよびクリーニング組成物
US20140109931A1 (en) * 2012-10-23 2014-04-24 Air Products And Chemicals Inc. Cleaning Formulations
JP2016148834A (ja) 2014-12-23 2016-08-18 エア プロダクツ アンド ケミカルズ インコーポレイテッドＡｉｒ Ｐｒｏｄｕｃｔｓ Ａｎｄ Ｃｈｅｍｉｃａｌｓ Ｉｎｃｏｒｐｏｒａｔｅｄ シリコンパッシベーションの改善された半水性フォトレジスト又は半導体製造残留物剥離及び洗浄用組成物

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5563119A (en) * 1995-01-26 1996-10-08 Ashland Inc. Stripping compositions containing alkanolamine compounds
JP3373105B2 (ja) * 1996-03-11 2003-02-04 富士フイルムアーチ株式会社 フォトレジスト剥離液
JP3757045B2 (ja) * 1997-12-10 2006-03-22 昭和電工株式会社 サイドウォール除去液
US5997658A (en) * 1998-01-09 1999-12-07 Ashland Inc. Aqueous stripping and cleaning compositions
KR20010025043A (ko) 1998-05-18 2001-03-26 바누치 유진 지. 반도체 기판용 스트립팅 조성물
KR100360397B1 (ko) * 1999-11-26 2002-11-18 삼성전자 주식회사 레지스트 제거용 조성물 및 이를 이용한 레지스트 제거 방법
JP3797541B2 (ja) * 2001-08-31 2006-07-19 東京応化工業株式会社 ホトレジスト用剥離液
CN100529014C (zh) * 2002-10-22 2009-08-19 Ekc技术公司 清洗半导体装置的磷酸组合物水溶液
WO2006081406A1 (en) * 2005-01-27 2006-08-03 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
US20070179072A1 (en) * 2006-01-30 2007-08-02 Rao Madhukar B Cleaning formulations
CN101432412A (zh) * 2006-03-28 2009-05-13 乔治洛德方法研究和开发液化空气有限公司 用于后cmp清洗工艺的含有防腐剂化合物的清洗溶液
US20080139436A1 (en) * 2006-09-18 2008-06-12 Chris Reid Two step cleaning process to remove resist, etch residue, and copper oxide from substrates having copper and low-K dielectric material
EP2082024A4 (en) * 2006-09-25 2010-11-17 Advanced Tech Materials COMPOSITIONS AND METHODS FOR REMOVING A PHOTORESISTANT AGENT FOR RECYCLING A SILICON GALETTE
JP2009075285A (ja) * 2007-09-20 2009-04-09 Fujifilm Corp 半導体デバイスの剥離液、及び、剥離方法
WO2010048139A2 (en) * 2008-10-21 2010-04-29 Advanced Technology Materials, Inc. Copper cleaning and protection formulations
CN101899369B (zh) * 2009-06-01 2015-10-21 3M创新有限公司 发动机清洁组合物和用于清洁发动机的方法
US8889609B2 (en) * 2011-03-16 2014-11-18 Air Products And Chemicals, Inc. Cleaning formulations and method of using the cleaning formulations
US9158202B2 (en) * 2012-11-21 2015-10-13 Dynaloy, Llc Process and composition for removing substances from substrates
CN113214920A (zh) * 2015-03-31 2021-08-06 弗萨姆材料美国有限责任公司 清洁制剂
EP3502225B1 (en) * 2017-12-22 2021-09-01 Versum Materials US, LLC Photoresist stripper
US11180697B2 (en) * 2018-11-19 2021-11-23 Versum Materials Us, Llc Etching solution having silicon oxide corrosion inhibitor and method of using the same
KR102952187B1 (ko) * 2019-06-19 2026-04-14 버슘머트리얼즈 유에스, 엘엘씨 반도체 기판용 세정 조성물

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002523546A (ja) 1998-08-18 2002-07-30 アーチ・スペシャルティ・ケミカルズ・インコーポレイテッド 非腐食性のストリッピングおよびクリーニング組成物
US20140109931A1 (en) * 2012-10-23 2014-04-24 Air Products And Chemicals Inc. Cleaning Formulations
JP2016148834A (ja) 2014-12-23 2016-08-18 エア プロダクツ アンド ケミカルズ インコーポレイテッドＡｉｒ Ｐｒｏｄｕｃｔｓ Ａｎｄ Ｃｈｅｍｉｃａｌｓ Ｉｎｃｏｒｐｏｒａｔｅｄ シリコンパッシベーションの改善された半水性フォトレジスト又は半導体製造残留物剥離及び洗浄用組成物

Also Published As

Publication number Publication date
TWI850424B (zh) 2024-08-01
TW202113057A (zh) 2021-04-01
WO2021011515A1 (en) 2021-01-21
JP7566003B2 (ja) 2024-10-11
JP2022541219A (ja) 2022-09-22
CN114127230A (zh) 2022-03-01
EP3999621A4 (en) 2023-08-16
US20220251480A1 (en) 2022-08-11
EP3999621A1 (en) 2022-05-25
KR20220035164A (ko) 2022-03-21

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