JP2022526163A5 - - Google Patents
Info
- Publication number
- JP2022526163A5 JP2022526163A5 JP2021557471A JP2021557471A JP2022526163A5 JP 2022526163 A5 JP2022526163 A5 JP 2022526163A5 JP 2021557471 A JP2021557471 A JP 2021557471A JP 2021557471 A JP2021557471 A JP 2021557471A JP 2022526163 A5 JP2022526163 A5 JP 2022526163A5
- Authority
- JP
- Japan
- Prior art keywords
- target material
- sputtering
- sputtering target
- stoichiometric
- target according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP19166312.9 | 2019-03-29 | ||
| EP19166312.9A EP3715496B1 (de) | 2019-03-29 | 2019-03-29 | Sputteringtarget zur herstellung molybdänoxidhaltiger schichten |
| PCT/EP2020/055481 WO2020200605A1 (de) | 2019-03-29 | 2020-03-03 | Sputteringtarget zur herstellung molybdänoxidhaltiger schichten |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2022526163A JP2022526163A (ja) | 2022-05-23 |
| JP2022526163A5 true JP2022526163A5 (enExample) | 2022-12-28 |
| JP7580390B2 JP7580390B2 (ja) | 2024-11-11 |
Family
ID=66041301
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021557471A Active JP7580390B2 (ja) | 2019-03-29 | 2020-03-03 | 酸化モリブデン含有層を製造するためのスパッタリングターゲット |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP3715496B1 (enExample) |
| JP (1) | JP7580390B2 (enExample) |
| KR (1) | KR102886784B1 (enExample) |
| CN (1) | CN113614278B (enExample) |
| TW (1) | TWI819205B (enExample) |
| WO (1) | WO2020200605A1 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2022014783A (ja) * | 2020-07-07 | 2022-01-20 | 三菱マテリアル株式会社 | 酸化モリブデンスパッタリングターゲット、および、酸化モリブデンスパッタリングターゲットの製造方法 |
| CN114916228B (zh) * | 2020-12-10 | 2023-08-15 | Lt金属株式会社 | 以钼氧化物为主成分的金属氧化物烧结体及包含其的溅射靶材 |
| KR102646917B1 (ko) * | 2021-09-16 | 2024-03-13 | 엘티메탈 주식회사 | 몰리브덴 산화물계 소결체, 상기 소결체를 이용한 박막, 상기 박막을 포함하는 박막트랜지스터 및 디스플레이 장치 |
| TWI839845B (zh) * | 2021-10-06 | 2024-04-21 | 南韓商Ｌｔ金屬股份有限公司 | 氧化鉬基燒結體、濺鍍靶材、使用燒結體的氧化物薄膜、包含薄膜的薄膜電晶體及顯示裝置 |
| KR102917229B1 (ko) * | 2021-10-14 | 2026-01-28 | 엘티메탈 주식회사 | 몰리브덴 산화물계 소결체, 이를 포함하는 스퍼터링 타겟 및 산화물 박막 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6193856B1 (en) | 1995-08-23 | 2001-02-27 | Asahi Glass Company Ltd. | Target and process for its production, and method for forming a film having a highly refractive index |
| RU2396210C2 (ru) * | 2003-07-22 | 2010-08-10 | Х.К.Штарк Инк. | ПОРОШОК MoO2, СПОСОБЫ ИЗГОТОВЛЕНИЯ ПЛАСТИНЫ ИЗ ПОРОШКА MoO2 (ИХ ВАРИАНТЫ), ЭЛЕМЕНТ И СПОСОБ ИЗГОТОВЛЕНИЯ ТОНКОЙ ПЛЕНКИ ИЗ НЕЕ, СПОСОБ РАСПЫЛЕНИЯ С ПРИМЕНЕНИЕМ УКАЗАННОЙ ПЛАСТИНЫ |
| US7754185B2 (en) * | 2004-06-29 | 2010-07-13 | H.C. Starck Inc. | Method of making MoO2 powders, products made from MoO2 powders, deposition of MoO2 thin films, and methods of using such materials |
| US20070071985A1 (en) * | 2005-09-29 | 2007-03-29 | Prabhat Kumar | Sputtering target, low resistivity, transparent conductive film, method for producing such film and composition for use therein |
| CN102105619B (zh) * | 2008-06-06 | 2014-01-22 | 出光兴产株式会社 | 氧化物薄膜用溅射靶及其制造方法 |
| JP2013020347A (ja) | 2011-07-08 | 2013-01-31 | Toppan Printing Co Ltd | タッチパネルおよびタッチパネルの製造方法 |
| DE102012112739A1 (de) | 2012-10-23 | 2014-04-24 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Licht absorbierendes Schichtsystem und dessen Herstellung sowie dafür geeignetes Sputtertarget |
| DE102013103679A1 (de) * | 2013-04-11 | 2014-10-30 | Heraeus Materials Technology Gmbh & Co. Kg | Licht absorbierende Schicht und die Schicht enthaltendes Schichtsystem, Verfahren zur dessen Herstellung und dafür geeignetes Sputtertarget |
| KR102316360B1 (ko) * | 2013-10-29 | 2021-10-22 | 플란제 에스이 | 스퍼터링 타깃 및 제조방법 |
| DE102014111935A1 (de) * | 2014-08-20 | 2016-02-25 | Heraeus Deutschland GmbH & Co. KG | Zweilagiges Schichtsystem mit teilabsorbierender Schicht sowie Verfahren und Sputtertarget zur Herstellung dieser Schicht |
-
2019
- 2019-03-29 EP EP19166312.9A patent/EP3715496B1/de active Active
-
2020
- 2020-03-03 KR KR1020217033119A patent/KR102886784B1/ko active Active
- 2020-03-03 WO PCT/EP2020/055481 patent/WO2020200605A1/de not_active Ceased
- 2020-03-03 JP JP2021557471A patent/JP7580390B2/ja active Active
- 2020-03-03 CN CN202080024251.7A patent/CN113614278B/zh active Active
- 2020-03-20 TW TW109109436A patent/TWI819205B/zh active
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