JP2022512116A5 - - Google Patents
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- Publication number
- JP2022512116A5 JP2022512116A5 JP2021531795A JP2021531795A JP2022512116A5 JP 2022512116 A5 JP2022512116 A5 JP 2022512116A5 JP 2021531795 A JP2021531795 A JP 2021531795A JP 2021531795 A JP2021531795 A JP 2021531795A JP 2022512116 A5 JP2022512116 A5 JP 2022512116A5
- Authority
- JP
- Japan
- Prior art keywords
- composition
- acid
- composition according
- weight
- amount
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2024065539A JP7789116B2 (ja) | 2018-12-03 | 2024-04-15 | エッチング組成物 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862774382P | 2018-12-03 | 2018-12-03 | |
| US62/774,382 | 2018-12-03 | ||
| US201962811600P | 2019-02-28 | 2019-02-28 | |
| US62/811,600 | 2019-02-28 | ||
| PCT/US2019/042780 WO2020117325A1 (en) | 2018-12-03 | 2019-07-22 | Etching compositions |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024065539A Division JP7789116B2 (ja) | 2018-12-03 | 2024-04-15 | エッチング組成物 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2022512116A JP2022512116A (ja) | 2022-02-02 |
| JP2022512116A5 true JP2022512116A5 (enExample) | 2022-08-01 |
| JP7474765B2 JP7474765B2 (ja) | 2024-04-25 |
Family
ID=70849674
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021531795A Active JP7474765B2 (ja) | 2018-12-03 | 2019-07-22 | エッチング組成物 |
| JP2024065539A Active JP7789116B2 (ja) | 2018-12-03 | 2024-04-15 | エッチング組成物 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024065539A Active JP7789116B2 (ja) | 2018-12-03 | 2024-04-15 | エッチング組成物 |
Country Status (9)
| Country | Link |
|---|---|
| US (3) | US10920144B2 (enExample) |
| EP (1) | EP3891248A4 (enExample) |
| JP (2) | JP7474765B2 (enExample) |
| KR (2) | KR20250116167A (enExample) |
| CN (2) | CN113412324B (enExample) |
| IL (1) | IL283492B2 (enExample) |
| SG (1) | SG11202105578RA (enExample) |
| TW (2) | TWI845529B (enExample) |
| WO (1) | WO2020117325A1 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10920144B2 (en) | 2018-12-03 | 2021-02-16 | Fujifilm Electronic Materials U.S.A., Inc. | Etching compositions |
| KR102880474B1 (ko) * | 2019-07-08 | 2025-11-03 | 바스프 에스이 | 실리콘-게르마늄 재료를 선택적으로 에칭하기 위한 조성물, 그의 용도 및 방법 |
| US20210104411A1 (en) * | 2019-10-04 | 2021-04-08 | Tokyo Ohka Kogyo Co., Ltd. | Etching solution, and method of producing semiconductor device |
| JP7668626B2 (ja) * | 2019-10-04 | 2025-04-25 | 東京応化工業株式会社 | エッチング液、及び半導体素子の製造方法 |
| EP4200895A1 (en) * | 2020-08-24 | 2023-06-28 | Basf Se | Composition, its use and a process for selectively etching silicon-germanium material |
| WO2022055814A1 (en) * | 2020-09-11 | 2022-03-17 | Fujifilm Electronic Materials U.S.A., Inc. | Etching compositions |
| JP7547984B2 (ja) * | 2020-12-15 | 2024-09-10 | 三菱ケミカル株式会社 | エッチング組成物、エッチング方法、半導体デバイスの製造方法及びゲートオールアラウンド型トランジスタの製造方法 |
| US11923237B2 (en) * | 2021-08-30 | 2024-03-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Manufacturing method of semiconductor device |
| EP4416233A4 (en) * | 2021-10-12 | 2025-08-20 | Fujifilm Electronic Mat Usa Inc | ENGRAVING COMPOSITIONS |
| KR20230127785A (ko) | 2022-02-25 | 2023-09-01 | 삼성전자주식회사 | 실리콘 게르마늄 막 식각용 식각 조성물 및 이를 이용하는 집적회로 소자의 제조 방법 |
| WO2023163878A1 (en) * | 2022-02-28 | 2023-08-31 | Fujifilm Electronic Materials U.S.A., Inc. | Etching compositions |
| KR102735535B1 (ko) * | 2022-06-22 | 2024-12-02 | 오씨아이 주식회사 | 질화규소 기판의 분석 방법 |
| KR102693377B1 (ko) | 2023-07-28 | 2024-08-09 | 한양대학교 산학협력단 | 무취의 실리콘 게르마늄 식각액 조성물 및 이를 이용한 식각 방법 |
| WO2025049387A2 (en) * | 2023-08-30 | 2025-03-06 | Fujifilm Electronic Materials U.S.A., Inc. | Etching compositions |
| TW202532616A (zh) * | 2023-12-22 | 2025-08-16 | 日商東京應化工業股份有限公司 | 處理液、半導體基板之處理方法及半導體之製造方法 |
| CN118957589B (zh) * | 2024-10-18 | 2025-02-11 | 润晶(合肥)光电材料有限公司 | 一种银铝蚀刻液组合物 |
Family Cites Families (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4604404A (en) | 1985-04-03 | 1986-08-05 | A. H. Robins Company, Inc. | Antiviral sulfonated naphthalene formaldehyde condensation polymers |
| TW263531B (enExample) * | 1992-03-11 | 1995-11-21 | Mitsubishi Gas Chemical Co | |
| KR20030007969A (ko) * | 2000-06-16 | 2003-01-23 | 카오카부시키가이샤 | 세정제 조성물 |
| US6705926B2 (en) * | 2001-10-24 | 2004-03-16 | Cabot Microelectronics Corporation | Boron-containing polishing system and method |
| US6717019B2 (en) | 2002-01-30 | 2004-04-06 | Air Products And Chemicals, Inc. | Glycidyl ether-capped acetylenic diol ethoxylate surfactants |
| US6987042B2 (en) * | 2003-05-30 | 2006-01-17 | International Business Machines Corporation | Method of forming a collar using selective SiGe/Amorphous Si Etch |
| US7176041B2 (en) * | 2003-07-01 | 2007-02-13 | Samsung Electronics Co., Ltd. | PAA-based etchant, methods of using same, and resultant structures |
| US7452481B2 (en) * | 2005-05-16 | 2008-11-18 | Kabushiki Kaisha Kobe Seiko Sho | Polishing slurry and method of reclaiming wafers |
| NZ564086A (en) * | 2005-06-02 | 2010-10-29 | Akzo Nobel Nv | Synergistic blends of (alkyl) naphthalene formaldehyde condensate sulfonates and lignosulfonates useful in agrochemical formulations |
| US20090212021A1 (en) * | 2005-06-13 | 2009-08-27 | Advanced Technology Materials, Inc. | Compositions and methods for selective removal of metal or metal alloy after metal silicide formation |
| FR2893446B1 (fr) | 2005-11-16 | 2008-02-15 | Soitec Silicon Insulator Techn | TRAITEMENT DE COUCHE DE SiGe POUR GRAVURE SELECTIVE |
| JP4912791B2 (ja) * | 2006-08-21 | 2012-04-11 | Ｊｓｒ株式会社 | 洗浄用組成物、洗浄方法及び半導体装置の製造方法 |
| JP4777197B2 (ja) * | 2006-09-11 | 2011-09-21 | 富士フイルム株式会社 | 洗浄液及びそれを用いた洗浄方法 |
| JP2008074990A (ja) * | 2006-09-22 | 2008-04-03 | Nihon Micro Coating Co Ltd | 研磨スラリー及び方法 |
| JP2008174807A (ja) | 2007-01-19 | 2008-07-31 | Nippon Hyomen Kagaku Kk | クロムを含まない金属表面処理液 |
| US20100112728A1 (en) * | 2007-03-31 | 2010-05-06 | Advanced Technology Materials, Inc. | Methods for stripping material for wafer reclamation |
| JP2010524208A (ja) | 2007-03-31 | 2010-07-15 | アドバンスド テクノロジー マテリアルズ，インコーポレイテッド | ウエハ再生のために材料を剥離する方法 |
| WO2010039936A2 (en) | 2008-10-02 | 2010-04-08 | Advanced Technology Materials, Inc. | Use of surfactant/defoamer mixtures for enhanced metals loading and surface passivation of silicon substrates |
| US8815634B2 (en) | 2008-10-31 | 2014-08-26 | Varian Semiconductor Equipment Associates, Inc. | Dark currents and reducing defects in image sensors and photovoltaic junctions |
| JP5757749B2 (ja) * | 2010-05-19 | 2015-07-29 | 富士フイルム株式会社 | 重合性組成物 |
| JP6044337B2 (ja) * | 2012-12-28 | 2016-12-14 | 三菱瓦斯化学株式会社 | インジウムとガリウムおよび酸素、またはインジウムとガリウムと亜鉛および酸素からなる酸化物のエッチング液およびエッチング方法 |
| KR101790090B1 (ko) * | 2013-05-02 | 2017-10-25 | 후지필름 가부시키가이샤 | 에칭 방법, 이에 이용하는 에칭액 및 에칭액의 키트, 및 반도체 기판 제품의 제조 방법 |
| JP6088999B2 (ja) * | 2013-05-02 | 2017-03-01 | 富士フイルム株式会社 | エッチング液およびエッチング液のキット、これをもちいたエッチング方法および半導体基板製品の製造方法 |
| JP6198671B2 (ja) * | 2013-05-02 | 2017-09-20 | 富士フイルム株式会社 | エッチング方法、これに用いるエッチング液、ならびに半導体基板製品の製造方法 |
| KR101755420B1 (ko) * | 2013-05-02 | 2017-07-10 | 후지필름 가부시키가이샤 | 에칭 방법, 이에 이용하는 에칭액 및 에칭액의 키트, 및 반도체 기판 제품의 제조 방법 |
| TWI659088B (zh) * | 2014-03-18 | 2019-05-11 | Fujifilm Electronic Materials U. S. A., Inc. | 蝕刻組成物 |
| TWI558850B (zh) * | 2014-03-29 | 2016-11-21 | 精密聚合物股份有限公司 | 電子零件用處理液及電子零件之製造方法 |
| JP6426489B2 (ja) * | 2015-02-03 | 2018-11-21 | 東京エレクトロン株式会社 | エッチング方法 |
| JP2017216444A (ja) | 2016-05-31 | 2017-12-07 | ナガセケムテックス株式会社 | エッチング液 |
| KR102710507B1 (ko) * | 2016-12-14 | 2024-09-25 | 삼성전자주식회사 | 식각용 조성물 및 이를 이용한 반도체 장치 제조 방법 |
| JP6891265B2 (ja) * | 2017-03-31 | 2021-06-18 | 富士フイルム株式会社 | 着色膜及びその製造方法、固体撮像素子 |
| US10920144B2 (en) | 2018-12-03 | 2021-02-16 | Fujifilm Electronic Materials U.S.A., Inc. | Etching compositions |
-
2019
- 2019-07-22 US US16/517,720 patent/US10920144B2/en active Active
- 2019-07-22 KR KR1020257024290A patent/KR20250116167A/ko active Pending
- 2019-07-22 JP JP2021531795A patent/JP7474765B2/ja active Active
- 2019-07-22 WO PCT/US2019/042780 patent/WO2020117325A1/en not_active Ceased
- 2019-07-22 CN CN201980091144.3A patent/CN113412324B/zh active Active
- 2019-07-22 CN CN202211424131.3A patent/CN115651656B/zh active Active
- 2019-07-22 KR KR1020217020169A patent/KR102837739B1/ko active Active
- 2019-07-22 EP EP19892583.6A patent/EP3891248A4/en active Pending
- 2019-07-22 SG SG11202105578RA patent/SG11202105578RA/en unknown
- 2019-07-22 IL IL283492A patent/IL283492B2/en unknown
- 2019-07-26 TW TW108126552A patent/TWI845529B/zh active
- 2019-07-26 TW TW113122452A patent/TWI875607B/zh active
-
2021
- 2021-01-27 US US17/159,551 patent/US11124704B2/en active Active
- 2021-08-10 US US17/398,181 patent/US11912921B2/en active Active
-
2024
- 2024-04-15 JP JP2024065539A patent/JP7789116B2/ja active Active
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