JP2022507504A - 半導体構造におけるiii-nから希土類への遷移 - Google Patents
半導体構造におけるiii-nから希土類への遷移 Download PDFInfo
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- 238000000034 method Methods 0.000 claims abstract description 17
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- -1 rare earth nitrides Chemical class 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims description 67
- 150000002910 rare earth metals Chemical class 0.000 claims description 62
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- 229910052757 nitrogen Inorganic materials 0.000 description 26
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 20
- 239000010703 silicon Substances 0.000 description 20
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- 235000012431 wafers Nutrition 0.000 description 18
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 12
- 229910052750 molybdenum Inorganic materials 0.000 description 12
- 239000011733 molybdenum Substances 0.000 description 12
- 239000012212 insulator Substances 0.000 description 11
- 229910052706 scandium Inorganic materials 0.000 description 10
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 7
- 229910052984 zinc sulfide Inorganic materials 0.000 description 7
- 229910002601 GaN Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000012071 phase Substances 0.000 description 6
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
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- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
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- 235000012239 silicon dioxide Nutrition 0.000 description 2
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- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021486 amorphous silicon dioxide Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
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- UJXZVRRCKFUQKG-UHFFFAOYSA-K indium(3+);phosphate Chemical compound [In+3].[O-]P([O-])([O-])=O UJXZVRRCKFUQKG-UHFFFAOYSA-K 0.000 description 1
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Abstract
Description
[0001] 本開示は、米国特許法第119条(e)の下で、2018年11月20日に出願された米国仮特許出願第62/769,951号の利益を主張し、その全体が参照により本明細書に組み込まれる。
[0002] 既存の半導体構造は通常、シリコン基板上に成長した窒化ガリウム(GaN)又はその他のIII-Nベースのエレクトロニクス及びオプトエレクトロニクスを有する。これはシリコン基板が一般に費用効果が高いからである。
[0007] III-Nから希土類への遷移のための層状構造が提供される。具体的には、層状構造は、基板、基板上の希土類酸化物又は希土類窒化物バッファ層、希土類酸化物又は希土類窒化物バッファ層上の第1のIII-N希土類遷移層、及び第1のIII-N希土類遷移層上の第2のIII-N希土類遷移層を含む。
[0013] 本開示の更なる特徴、その性質、及び様々な利点が、添付図面と関連させて以下の詳細な説明を考慮することで、明らかとなるであろう。図面全体を通して、同様の参照記号は同様の部分を参照する。
[0033] III-N層成長プロセスにおける高温の問題を考慮して、本明細書に記載される実施形態は、REO層からIII-N層に移行するために、希土類酸化物(REO)又は希土類窒化物(REN)バッファ層、及び多形III-N-RE遷移層を使用する。次いで、RE-III-N窒化物の多形性を使用して、III-N層との格子整合を行うことができる。
Claims (23)
- 基板と、
前記基板上の希土類含有バッファ層と、
前記希土類含有バッファ層上の第1のIII-N希土類遷移層と、
前記第1のIII-N希土類遷移層の上の第2のIII-N希土類遷移層と、を含む層状構造。 - 前記希土類含有バッファ層は、希土類酸化物又は希土類窒化物からなる群から選択される、請求項1に記載の層状構造。
- 前記希土類含有バッファ層は、前記希土類含有バッファ層の上側表面に第1の格子定数を有し、前記希土類含有バッファ層の下側表面に第2の格子定数を有し、前記第1の格子定数は前記第2の格子定数よりも小さい、請求項2に記載の層状構造。
- 前記第1のIII-N希土類遷移層は、ScAlN及びScGaNである少なくとも3つの副層を含む、請求項1に記載の層状構造。
- 前記複数の副層の各々が、立方晶構造、単純六方晶構造、又はウルツ鉱型六方晶構造のうちの1つを有する、請求項4に記載の層状構造。
- 前記第2のIII-N希土類遷移層は、界面活性剤としてScを用いて成長されたAlNを含む、請求項1に記載の層状構造。
- 前記第1のIII-N希土類遷移層の下端の第1の副層は第1の格子定数を有し、前記第1のIII-N希土類遷移層の中央の第2の副層は第2の格子定数を有し、前記第1のIII-N希土類遷移層の上端の第3の副層は第3の格子定数を有し、
前記第1の格子定数は前記第2の格子定数よりも小さく、前記第2の格子定数は前記第3の格子定数よりも小さい、請求項4に記載の層状構造。 - 前記第1のIII-N希土類遷移層は、ScAlNの複数の副層を含み、ScAlNの結晶構造は、前記第1のIII-N希土類遷移層の上側表面と、前記第1のIII-N希土類遷移層下側表面では異なる可能性がある、請求項1に記載の層状構造。
- 前記第2のIII-N希土類遷移層は、表面移動度及び格子力学を制御するために希土類(RE)でドープされている、請求項1に記載の層状構造。
- 前記第1のIII-N希土類遷移層は、
h-ScaGa(1-a)Nである第1の副層、
h-SchAl(1-h)Nである第2の副層、及び
w-ScnAl(1-n)Nである第3の副層を含み、
前記副層は順番に互いの上に積層され、
前記第2の副層の係数hは前記第3の副層の係数nよりも大きく、前記第1の副層の面内格子定数は第2の層の面内格子定数よりも大きく、前記第2の層の面内定数は第3の層の面内定数よりも大きい、請求項1に記載の層状構造。 - 前記第1のIII-N希土類遷移層は複数の副層を含み、前記副層の各々は格子定数を有し、
前記複数の副層のうちの第1の副層は、前記第1のIII-N希土類遷移層の上側表面に第1の格子定数を有し、前記複数の副層のうちの別の副層は、前記第1のIII-N希土類遷移層の下側表面に第2の格子定数を有し、
前記第1の格子定数は、前記第2の格子定数よりも大きい、請求項1に記載の層状構造。 - 前記第1のIII-N希土類遷移層は圧電層である、請求項1に記載の層状構造。
- 前記第1のIII-N希土類遷移層は、圧電係数を増加させるために圧縮応力下にある、請求項1に記載の層状構造。
- 前記第1のIII-N希土類遷移層は、圧電係数を増加させるために引張応力下にある、請求項1に記載の層状構造。
- 前記第1のIII-N希土類遷移層は、SczAl(1-z)Nである副層A、及びSchAl(1-h)Nである副層Bを含み、
副層Aの係数z及び副層Bの係数hは、前記副層が、
(i)副層Aが引張応力下にある、及び
(ii)副層Bが圧縮応力下にある、
ことを満足するように選択される、請求項1に記載の層状構造。 - 前記係数は、zが0.08~0.20の範囲、及びhが0.06~0.18の範囲として設定できる、請求項15に記載の層状構造。
- 前記第1のIII-N希土類遷移層は、YzAl(1-z)Nである副層A、及びSchAl(1-h)Nである副層Bを含み、
係数z及びhは、前記副層が、
(i)副層Aが圧縮応力下にある、及び
(ii)前記副層の各々の結果として得られる格子定数がA>Bを満足する、
ことを満足するように選択される、請求項1に記載の層状構造。 - 前記第1のIII-N希土類遷移層は、
前記希土類含有バッファ層上の第1の副層と、
前記第1の副層上の第2の副層であって、前記第2の副層の格子定数よりも大きい格子定数を有する、第2の副層と、
前記第2の副層上の第3の副層であって、前記第2の副層の格子定数よりも小さい格子定数を有する、第3の副層と、
前記第3の副層上の第4の副層であって、前記第3の副層の格子定数よりも大きい格子定数を有する、第4の副層と、を含み、
前記第1の副層、前記第2の副層、前記第3の副層、前記第4の副層は、交替する格子定数を有し、
前記交替する格子定数は圧電係数を増加させる、請求項1に記載の層状構造。 - 基板と、
前記基板上の希土類含有バッファ層と、
前記基板/バッファ層上に配置されたソース電極及びドレイン電極と、
複数の副層を含む第1のIII-N希土類遷移層であって、前記副層の各々が前記ドレイン電極の前記ソース電極上にある、第1のIII-N希土類遷移層と、
前記ソース電極と前記ドレイン電極との間のチャネル層上に配置されたゲート電極と、を備える電界効果トランジスタ。 - 前記希土類含有バッファ層は、前記希土類含有バッファ層の上側表面に第1の格子定数を有し、前記希土類含有バッファ層の下側表面に第2の格子定数を有し、
前記第1の格子定数は前記第2の格子定数よりも小さい、請求項19に記載の電界効果トランジスタ。 - 前記第1のIII-N希土類遷移層は圧電層である、請求項19に記載の電界効果トランジスタ。
- 前記第1のIII-N希土類遷移層は、
複数の副層であって、前記副層の各々が格子定数を有する、複数の副層を含み、
前記複数の副層のうちの第1の副層は、前記第1のIII-N希土類遷移層の上側表面に第1の格子定数を有し、前記複数の副層のうちの別の副層は、前記第1のIII-N希土類遷移層の下側表面に第2の格子定数を有し、
前記第1の格子定数は前記第2の格子定数よりも大きい、請求項19に記載の電界効果トランジスタ。 - 層状構造を成長させる方法であって、
基板を構成することと、
前記基板上に希土類含有バッファ層をエピタキシャル成長させることと、
前記希土類含有バッファ層上に、第1の格子定数a1にて、第1のIII-N希土類遷移層をエピタキシャル成長させることと、を含み、
前記希土類含有バッファ層は、前記希土類含有バッファ層の上側表面に第1の格子定数を有し、前記希土類含有バッファ層の下側表面に第2の格子定数を有し、
前記第1の格子定数は前記第2の格子定数よりも小さい、方法。
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