JP2022188583A - 半導体装置用基板 - Google Patents
半導体装置用基板 Download PDFInfo
- Publication number
- JP2022188583A JP2022188583A JP2021096735A JP2021096735A JP2022188583A JP 2022188583 A JP2022188583 A JP 2022188583A JP 2021096735 A JP2021096735 A JP 2021096735A JP 2021096735 A JP2021096735 A JP 2021096735A JP 2022188583 A JP2022188583 A JP 2022188583A
- Authority
- JP
- Japan
- Prior art keywords
- copper plate
- semiconductor device
- recess
- plate
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 55
- 239000000758 substrate Substances 0.000 title claims abstract description 47
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 100
- 229910052802 copper Inorganic materials 0.000 claims abstract description 100
- 239000010949 copper Substances 0.000 claims abstract description 100
- 230000002093 peripheral effect Effects 0.000 claims description 9
- 239000000463 material Substances 0.000 abstract description 22
- 229910000679 solder Inorganic materials 0.000 abstract description 9
- 238000009736 wetting Methods 0.000 abstract description 5
- 230000002401 inhibitory effect Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 10
- 230000008646 thermal stress Effects 0.000 description 7
- 230000017525 heat dissipation Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000003892 spreading Methods 0.000 description 4
- 238000010248 power generation Methods 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 229910001152 Bi alloy Inorganic materials 0.000 description 1
- 229910002480 Cu-O Inorganic materials 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QLTBJHSQPNVBLW-UHFFFAOYSA-N [Bi].[In].[Ag].[Sn] Chemical compound [Bi].[In].[Ag].[Sn] QLTBJHSQPNVBLW-UHFFFAOYSA-N 0.000 description 1
- JVCDUTIVKYCTFB-UHFFFAOYSA-N [Bi].[Zn].[Sn] Chemical compound [Bi].[Zn].[Sn] JVCDUTIVKYCTFB-UHFFFAOYSA-N 0.000 description 1
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- -1 for example Inorganic materials 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910000597 tin-copper alloy Inorganic materials 0.000 description 1
- 229910000969 tin-silver-copper Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
- H01L23/49844—Geometry or layout for devices being provided for in H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/62—Protection against overvoltage, e.g. fuses, shunts
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021096735A JP2022188583A (ja) | 2021-06-09 | 2021-06-09 | 半導体装置用基板 |
PCT/JP2022/011601 WO2022259676A1 (fr) | 2021-06-09 | 2022-03-15 | Substrat pour dispositif à semi-conducteur |
DE112022002069.5T DE112022002069T5 (de) | 2021-06-09 | 2022-03-15 | Substrat für Halbleitervorrichtung |
CN202280040561.7A CN117480599A (zh) | 2021-06-09 | 2022-03-15 | 半导体装置用基板 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021096735A JP2022188583A (ja) | 2021-06-09 | 2021-06-09 | 半導体装置用基板 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2022188583A true JP2022188583A (ja) | 2022-12-21 |
JP2022188583A5 JP2022188583A5 (fr) | 2023-12-11 |
Family
ID=84425824
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021096735A Pending JP2022188583A (ja) | 2021-06-09 | 2021-06-09 | 半導体装置用基板 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2022188583A (fr) |
CN (1) | CN117480599A (fr) |
DE (1) | DE112022002069T5 (fr) |
WO (1) | WO2022259676A1 (fr) |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10332695A1 (de) * | 2003-07-18 | 2005-02-03 | Robert Bosch Gmbh | Anordnung zur Befestigung eines Bauelements |
JP5056325B2 (ja) * | 2007-10-04 | 2012-10-24 | 富士電機株式会社 | 半導体装置の製造方法および半田ペースト塗布用のメタルマスク |
JP7047895B2 (ja) | 2018-03-01 | 2022-04-05 | 富士電機株式会社 | 半導体装置 |
-
2021
- 2021-06-09 JP JP2021096735A patent/JP2022188583A/ja active Pending
-
2022
- 2022-03-15 DE DE112022002069.5T patent/DE112022002069T5/de active Pending
- 2022-03-15 CN CN202280040561.7A patent/CN117480599A/zh active Pending
- 2022-03-15 WO PCT/JP2022/011601 patent/WO2022259676A1/fr active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2022259676A1 (fr) | 2022-12-15 |
CN117480599A (zh) | 2024-01-30 |
DE112022002069T5 (de) | 2024-01-25 |
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