JP2022132618A - 二次元アモルファス炭素被膜並びに幹細胞の成長及び分化方法 - Google Patents
二次元アモルファス炭素被膜並びに幹細胞の成長及び分化方法 Download PDFInfo
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Abstract
Description
本発明は、概して、二次元アモルファス炭素(2DAC)被膜及び物品、並びに幹細胞の成長及び分化方法に関する。
従来技術には、生物医学用途などの特定の目的を意図した被膜に好適な用途を開発し提供するための要望が存在する。
定義
用語の定義が一般的に使用される用語の意味から逸脱する場合、出願人は、特に示さない限り、以下に与える定義を使用するものとする。
本発明は、様々な改変及び別の形態が可能であるが、その特定の実施形態は、図面に例示として示されており、かつ、以下で詳細に説明する。しかし、本発明を開示された特定の形態に限定することを意図するものではなく、逆に、本発明は、本発明の精神及び範囲内にある全ての改変物、均等物及び代替物を包含するものとする。
例1
実施例の主題
本発明の2DACのプロセスパラメータとしては、次のものを挙げることができる:(i)プロセスガス:CH4(ii)チャンバー圧力:2.0E-2mbar;(iii)レーザーフルエンス:70mJ/cm2;(iv)成長時間:1分;(v)プラズマ出力:5W;(vi)基材:銅箔。
次の参考文献は上で参照されており、参照により本明細書において援用する。
1. Ferrari, A.C. et al. “Interpretation of Raman spectra of disordered and amorphous carbon.” Physical Review B 61, 14095-14107 (2000).
2. Robertson, J. “Ultrathin carbon coatings for magnetic storage technology.” Thin Solid Films 383, 81-88 (2001).
3. Hu, S. et al. “Proton transport through one-atom-thick crystals.” Nature 516, 227-230 (2014).
4. Das, S. et al. “Measurements of adhesion energy of graphene to metallic substrates.” Carbon 59, 121-129 (2013).
5. Schriver, M. et al. “Graphene as a Long-Term Metal Oxidation Barrier: Worse Than Nothing” ACS Nano 7, 5763-5768 (2013).
6. Wang, J. S. et al. “The mechanical performance of DLC films on steel substrates.” Thin Solid Films 325, 163-174 (1998).
7. Leng, Y. X. et al. “Mechanical properties and platelet adhesion behavior of diamond-like carbon films synthesized by pulsed vacuum arc plasma deposition.” Surface Science 531, 177-184 (2003).
8. Maguire, P. D. et al. “Mechanical stability, corrosion performance and bioresponse of amorphous diamond-like carbon for medical stents and guidewires.” Diamond and Related Materials 14, 1277-1288 (2005).
9. Marcon, et. al. “The head-disk interface roadmap to an areal density of 4 Tbit/in2.” Advances in Tribology 2013, 1-8 (2013).
10. Discher, D. E., Mooney, D. J. & Zandstra, P. W. “Growth Factors, Matrices, and Forces Combine and Control Stem Cells.” Science 324, 1673-1677 (2009).
11. Spradling, A., Drummond-Barbosa, D. & Kai, T. “Stem cells find their niche.” Nature 414, 98-104 (2001).
12. Murry, C. E. & Keller, G. “Differentiation of Embryonic Stem Cells to Clinically Relevant Populations: Lessons from Embryonic Development.” Cell 132, 661-680 (2008).
13. Engler, A. J., Sen, S., Sweeney, H. L. & Discher, D. E. “Matrix Elasticity Directs Stem Cell Lineage Specification.” Cell 126, 677-689 (2006).
14. Dalby, M. J. et al. “The control of human mesenchymal cell differentiation using nanoscale symmetry and disorder.” Nature Materials 6, 997-1003 (2007).
15. Trappmann, B. et al. “Extracellular-matrix tethering regulates stem-cell fate.” Nature Materials 11, 642-649 (2012).
16. Lee, H. et al. “Establishment of feeder-free culture system for human induced pluripotent stem cell on DAS nanocrystalline graphene.” Scientific Reports 6, 20708 (2016).
17. Choi, W. J. et al. ”Effects of substrate conductivity on cell morphogenesis and proliferation using tailored, atomic layer deposition-grown ZnO thin films.” Scientific Reports 5, 9974 (2015).
Claims (20)
- 二次元(2D)アモルファス炭素フィルムであって、前記2Dアモルファス炭素が≦0.8の結晶化度(C)を有する二次元(2D)アモルファス炭素フィルム。
- 前記二次元アモルファス炭素フィルムが0.01~1000Ω-cmの抵抗率を有する、請求項1に記載の二次元(2D)アモルファス炭素フィルム。
- 2次元(2D)アモルファス炭素フィルムであって、前記2Dアモルファス炭素フィルムが<1の結晶化度(C)を有し、sp3/sp2結合比が0.2以下である2次元(2D)アモルファス炭素フィルム。
- 基材と、
前記基材の表面上に配置された二次元(2D)アモルファス炭素フィルムと
を備える物品であって、前記2Dアモルファス炭素フィルムが≦0.8の結晶化度(C)を有する物品。 - 前記基材が触媒金属、非触媒金属、ガラス、プラスチック、生物活性材料、組織培養プレート及び材料の酸化物よりなる群から選択される、請求項4に記載の物品。
- 前記2Dアモルファス炭素フィルムが配置された前記基材の表面と前記2Dアモルファス炭素フィルムと接着力が≧200J/m2である、請求項4に記載の物品。
- 二次元(2D)アモルファス炭素フィルムの形成方法であって、次の工程:
前駆体ガスを分解して少なくとも1種の分解種を生成し;及び
基材の表面上の前記分解種から2Dアモルファス炭素フィルムを形成させること
を含み、前記前駆体ガスが炭素含有ガスを含む方法。 - 前記形成前に、前記基材を≦500℃の温度に加熱することを含む、請求項7に記載の方法。
- 前記2Dアモルファス炭素フィルムが実質的に基材表面全体にわたる連続フィルムとして形成される、請求項7に記載の方法。
- 前記基材の前記表面から前記2Dアモルファス炭素フィルムを分離して自立型2Dアモルファス炭素フィルムを得ることを含む、請求項7に記載の方法。
- 自立型2Dアモルファス炭素フィルムを別の基材の表面に転写することを含む、請求項7に記載の方法。
- 非六角形炭素環及び六角形炭素環からなる原子構造を有する二次元アモルファス炭素(2DAC)被膜であって、前記非六角形炭素環に対する前記六角形炭素環の比が1.0未満である二次元アモルファス炭素(2DAC)被膜。
- 前記被膜がインプラント被膜である、請求項12に記載の被膜。
- 前記インプラント被膜がインプラントの表面と約60°の接触角を形成する、請求項13に記載の被膜。
- 前記インプラント被膜が約200J/m2以上の接着エネルギーでインプラントに付着する、請求項13に記載の被膜。
- 前記非六角形炭素環が炭素4員環、炭素5員環、炭素7員環、炭素8員環及び炭素9員環よりなる群から選択される1つの形態である、請求項12に記載の被膜。
- 550nm以上の波長で98%以上の光透過度を有する、請求項12に記載の被膜。
- 幹細胞を分化細胞に分化させる方法であって、次の工程:
基材の表面に二次元アモルファス炭素(2DAC)を被覆し;
前記2DACが被覆された前記基材の前記表面上にシード層を配置し;及び
前記2DACが被覆された前記基材の前記表面に幹細胞培地中の成長因子を吸着させること
を含む方法。 - 前記幹細胞の所望濃度に達するまで前記シード層から追加の幹細胞を成長させることを含む、請求項18に記載の方法。
- 前記成長因子が、標準的な組織培養基材よりも速い速度で前記2DACが被覆された前記基材の前記表面に吸着される、請求項18に記載の方法。
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US11192788B2 (en) | 2021-12-07 |
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SG11201907148SA (en) | 2019-09-27 |
WO2018156082A1 (en) | 2018-08-30 |
US20180337411A1 (en) | 2018-11-22 |
EP3585728A1 (en) | 2020-01-01 |
KR20190122726A (ko) | 2019-10-30 |
EP3585728A4 (en) | 2020-12-23 |
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US11114674B2 (en) | 2021-09-07 |
CN110312679A (zh) | 2019-10-08 |
US20180244524A1 (en) | 2018-08-30 |
KR102593257B1 (ko) | 2023-10-23 |
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