JP2022095794A - 積層板構造における湾曲を低下させる非対称製造方法 - Google Patents
積層板構造における湾曲を低下させる非対称製造方法 Download PDFInfo
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- JP2022095794A JP2022095794A JP2022061696A JP2022061696A JP2022095794A JP 2022095794 A JP2022095794 A JP 2022095794A JP 2022061696 A JP2022061696 A JP 2022061696A JP 2022061696 A JP2022061696 A JP 2022061696A JP 2022095794 A JP2022095794 A JP 2022095794A
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- laminated board
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- laminate
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- B32B2307/40—Properties of the layers or laminate having particular optical properties
- B32B2307/412—Transparent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2315/00—Other materials containing non-metallic inorganic compounds not provided for in groups B32B2311/00 - B32B2313/04
- B32B2315/08—Glass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
- B32B37/144—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers using layers with different mechanical or chemical conditions or properties, e.g. layers with different thermal shrinkage, layers under tension during bonding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
- B32B37/16—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with all layers existing as coherent layers before laminating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
- B32B38/0036—Heat treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31—Surface property or characteristic of web, sheet or block
- Y10T428/315—Surface modified glass [e.g., tempered, strengthened, etc.]
Abstract
Description
図1は、本開示の様々な実施の形態による積層板構造100の断面図を示している。その積層板構造は、第1の基板101、第2の基板107、および第1と第2の基板を貼り付ける中間層113を備え得る。第1の基板101は、第一面103および反対の第二面105、並びにそれら2つの面の間の厚さT1を有し得る。同様に、前記第2の基板は、第一面109および反対の第二面111、並びにそれら2つの面の間の厚さT2を有し得る。中間層113も厚さT3を有し得る。
積層板構造を製造する方法および積層板構造における湾曲を低下させる方法も、ここに開示されている。様々な実施の形態によれば、ここに開示された方法は、中間層により第1の基板を第2の基板に貼り付けて、例えば、図1に示される三層積層板構造を製造する工程を含み得る。次いで、そのように製造された積重体を、当該技術分野で公知のどの適切な方法または装置を使用して、積層温度に加熱しても差し支えない。非限定的な例として、その積重体は、真空または積層袋などの真空室内に配置することができる。その積重体は、積重体の移動を防ぐために、巻かれても、または他の様式で固定されてもよい。例えば、その積重体は、ポリエステルテープなどの高温テープを使用して、固定されてもよい。様々な実施の形態によれば、その積重体の周りに、薄い通気性の布を巻き付けても差し支えない。
0.7mm厚の「Corning」「EAGLE XG」ガラス、6mm厚のソーダ石灰ガラス(SLG)、および0.76mm厚のEVA中間層を使用して、66cm×76.2cm(26インチ×30インチ)の寸法を有する非対称積層板構造を調製した。この「Corning」「EAGLE XG」基板のCTEは約3.2×10-6/℃であり、一方で、ソーダ石灰ガラスのCTEは約8.5~9.5×10-6/℃であった。これらの三層を室温で互いに接触するように置き、約1MPa(140psi)の圧力で、140~150℃の積層温度に加熱し、その後、室温に冷却した。
0.7mm厚の「Corning」「EAGLE XG」ガラス、6mm厚のソーダ石灰ガラス(SLG)、および0.76mm厚のPVB中間層を使用して、91.44cm×152.4cm(3フィート×5フィート)の寸法を有する3つの非対称積層板構造を調製した。両方のガラス基板の加熱または冷却の速度を、積層中に断熱毛布を使用することにより変えた。実施例2Aにおいて、ソーダ石灰ガラスを「EAGLE XG」ガラスより速く冷却し、実施例2Bにおいて、ソーダ石灰ガラスを「EAGLE XG」ガラスより速く加熱し、実施例2Cにおいて、ソーダ石灰ガラスを「EAGLE XG」ガラスより遅く冷却した。各積層板に得られた面外湾曲(mm)が、下記の表Iに示されている。
積層板構造を製造する方法であって、
第1の基板と第2の基板との間に中間層を配置して、積重体を形成する工程、および
前記積重体を積層温度に加熱して、積層板構造を形成する工程、
を有してなり、
前記第2の基板が、第一面と第二面を有する非対称にアニールされたまたはテンパリングされたガラス基板であり、該第一面の第1の圧縮応力が該第二面の第2の圧縮応力より小さく、
約-20℃から約90℃に及ぶ温度での前記積層板構造の最小曲率半径が、該積層板構造の最大寸法より少なくとも約40倍大きい、方法。
前記第1の基板の熱膨張係数が前記第2の基板の熱膨張係数と異なる、実施形態1に記載の方法。
前記第2の基板の熱膨張係数が、前記第1の基板の熱膨張係数より少なくとも30%大きい、実施形態2に記載の方法。
前記第2の基板が熱的にテンパリングされたまたは化学的にテンパリングされたガラスシートである、実施形態1に記載の方法。
前記第1の基板が、ガラス、ガラスセラミック、セラミック、高分子、および金属の基板から選択される、実施形態1に記載の方法。
前記第1の基板が、対称または非対称にアニールまたはテンパリングされたガラス基板である、実施形態1に記載の方法。
前記積層板構造が、高分子層、追加のガラス層、反射層、導電層、エレクトロクロミック層、フォトクロミック層、および光起電層から選択される少なくとも1つの追加の層をさらに備える、実施形態1に記載の方法。
前記中間層が前記第2の基板の第一面と接触するように配置され、該第2の基板の熱膨張係数が、前記第1の基板の熱膨張係数より大きい、実施形態1に記載の方法。
前記中間層が前記第2の基板の第二面と接触するように配置され、該第2の基板の熱膨張係数が、前記第1の基板の熱膨張係数より小さい、実施形態1に記載の方法。
前記積層板構造の面外撓みが、該積層板構造の厚さの2倍未満である、実施形態1に記載の方法。
第1の基板、第2の基板、および該第1と第2の基板を貼り付ける中間層を備えた積層板構造であって、
前記第2の基板は、第一面と第二面を有する非対称にアニールされたまたはテンパリングされたガラス基板であり、該第一面の圧縮応力が該第二面の圧縮応力より小さく、
前記第1の基板の熱膨張係数が前記第2の基板の熱膨張係数と異なり、
約-20℃から約90℃に及ぶ温度での前記積層板構造の最小曲率半径が、該積層板構造の最大寸法より少なくとも約40倍大きい、積層板構造。
前記第1の基板の厚さが約0.3mmから約2mmに及び、第2の基板の厚さが約3mmから約10mmに及ぶ、実施形態11に記載の積層板構造。
前記第1の基板の熱膨張係数と前記第2の基板の熱膨張係数との間の差が、約1×10-6/℃から約10×10-6/℃に及ぶ、実施形態11に記載の積層板構造。
前記積重体が、高分子層、追加のガラス層、反射層、導電層、エレクトロクロミック層、フォトクロミック層、および光起電層から選択される少なくとも1つの追加の層をさらに備える、実施形態11に記載の積層板構造。
前記中間層が前記第2の基板の第一面と接触するように配置され、該第2の基板の熱膨張係数が、前記第1の基板の熱膨張係数より大きい、実施形態11に記載の積層板構造。
前記中間層が前記第2の基板の第二面と接触するように配置され、該第2の基板の熱膨張係数が、前記第1の基板の熱膨張係数より小さい、実施形態11に記載の積層板構造。
前記積層板構造の面外撓みが、該積層板構造の厚さの2倍未満である、実施形態11に記載の積層板構造。
積層板構造を製造する方法であって、
第1の基板と第2の基板との間に中間層を配置して、積重体を形成する工程、
前記積重体を第1の平均積層温度に加熱して、積層板構造を形成する工程、および
前記積層板構造を第2の平均温度に冷却する工程、
を有してなり、
前記第2の基板の熱膨張係数が前記第1の基板の熱膨張係数より大きく、
前記積重体を加熱する工程が、前記第1の基板を前記第2の基板の第2の加熱速度より速い第1の加熱速度で選択加熱する工程を含むか、または
前記積層板構造を冷却する工程が、前記第1の基板を前記第2の基板の第2の冷却速度より遅い第1の冷却速度で選択冷却する工程を含む、方法。
前記積重体を加熱する工程が、前記第1の基板を第1の積層温度に保持し、前記第2の基板を第2の積層温度に保持する工程を含み、該第2の積層温度が該第1の積層温度よりも低い、実施形態18に記載の方法。
前記第1の積層温度が前記第2の積層温度よりも少なくとも20℃高い、実施形態19に記載の方法。
前記第1の加熱速度が前記第2の加熱速度より少なくとも約30%大きいか、または前記第2の冷却速度が前記第1の冷却速度より少なくとも約30%大きい、実施形態18に記載の方法。
前記第2の基板の熱膨張係数が前記第1の基板の熱膨張係数より少なくとも30%大きい、実施形態18に記載の方法。
約-20℃から約90℃に及ぶ温度での前記積層板構造の最小曲率半径が、該積層板構造の最大寸法より少なくとも約40倍大きい、実施形態18に記載の方法。
前記積層板構造の面外撓みが、該積層板構造の厚さの2倍未満である、実施形態18に記載の方法。
第1のガラス基板、第2のガラス基板、および該第1と第2のガラス基板を貼り付ける中間層を備えた積層板構造であって、
前記第2のガラス基板の熱膨張係数が前記第1のガラス基板の熱膨張係数より少なくとも約30%大きく、
前記積層板構造の面外撓みが、該積層板構造の厚さの2倍未満である、積層板構造。
101、201、301 第1の基板
107、207、307 第2の基板
113 中間層
200、300 積層板
207s、307s 対称基板
215、315 積重体
307a 非対称基板
Claims (5)
- 積層板構造を製造する方法であって、
第1の基板と第2の基板との間に中間層を配置して、積重体を形成する工程、
前記積重体を第1の平均積層温度に加熱して、積層板構造を形成する工程、および
前記積層板構造を第2の平均温度に冷却する工程、
を有してなり、
前記積重体を加熱する工程が、前記第1の基板を第1の積層温度に保持し、前記第2の基板を第2の積層温度に保持する工程を含み、
前記第2の積層温度が前記第1の積層温度よりも低く、
前記第2の基板の熱膨張係数が前記第1の基板の熱膨張係数より大きく、
前記積重体を加熱する工程が、前記第1の基板を前記第2の基板の第2の加熱速度より速い第1の加熱速度で選択加熱する工程を含むか、または
前記積層板構造を冷却する工程が、前記第1の基板を前記第2の基板の第2の冷却速度より遅い第1の冷却速度で選択冷却する工程を含み、
約-20℃から約90℃に及ぶ温度での前記積層板構造の最小曲率半径が、該積層板構造の最大寸法より少なくとも約40倍大きい、方法。 - 前記第1の積層温度が前記第2の積層温度よりも少なくとも20℃高い、請求項1記載の方法。
- 前記第1の加熱速度が前記第2の加熱速度より少なくとも約30%大きいか、または前記第2の冷却速度が前記第1の冷却速度より少なくとも約30%大きい、請求項1または2記載の方法。
- 前記積層板構造の面外撓みが、該積層板構造の厚さの2倍未満である、請求項1から3いずれか1項記載の方法。
- 第1のガラス基板、第2のガラス基板、および該第1と第2のガラス基板を貼り付ける中間層を備えた積層板構造であって、
前記第2のガラス基板の熱膨張係数が前記第1のガラス基板の熱膨張係数より少なくとも約30%大きく、
前記積層板構造の面外撓みが、該積層板構造の厚さの2倍未満である、積層板構造。
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EP4035891A1 (en) | 2022-08-03 |
EP3693158A2 (en) | 2020-08-12 |
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EP3397485A1 (en) | 2018-11-07 |
DK3693158T3 (da) | 2022-05-23 |
US20170182739A1 (en) | 2017-06-29 |
EP3397485B1 (en) | 2020-05-13 |
CN112776425B (zh) | 2023-05-30 |
WO2017116907A1 (en) | 2017-07-06 |
CN108602322A (zh) | 2018-09-28 |
EP3693158A3 (en) | 2021-02-24 |
EP3693158B1 (en) | 2022-04-27 |
US10189228B2 (en) | 2019-01-29 |
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CN112776425A (zh) | 2021-05-11 |
KR20180099783A (ko) | 2018-09-05 |
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