JP2022075586A - ボンディング設備におけるダイ移送のための装置及び方法 - Google Patents
ボンディング設備におけるダイ移送のための装置及び方法 Download PDFInfo
- Publication number
- JP2022075586A JP2022075586A JP2021179039A JP2021179039A JP2022075586A JP 2022075586 A JP2022075586 A JP 2022075586A JP 2021179039 A JP2021179039 A JP 2021179039A JP 2021179039 A JP2021179039 A JP 2021179039A JP 2022075586 A JP2022075586 A JP 2022075586A
- Authority
- JP
- Japan
- Prior art keywords
- ejector
- picker
- die
- height
- control unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 37
- 238000009434 installation Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 claims description 28
- 238000007689 inspection Methods 0.000 claims description 3
- 238000001179 sorption measurement Methods 0.000 claims description 2
- 230000003028 elevating effect Effects 0.000 abstract description 7
- 230000006837 decompression Effects 0.000 abstract 3
- 230000032258 transport Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 32
- 239000004065 semiconductor Substances 0.000 description 7
- 230000001174 ascending effect Effects 0.000 description 6
- 238000005452 bending Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips, lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K13/00—Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
- H05K13/04—Mounting of components, e.g. of leadless components
- H05K13/0404—Pick-and-place heads or apparatus, e.g. with jaws
- H05K13/0406—Drive mechanisms for pick-and-place heads, e.g. details relating to power transmission, motors or vibration damping
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K13/00—Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
- H05K13/04—Mounting of components, e.g. of leadless components
- H05K13/0404—Pick-and-place heads or apparatus, e.g. with jaws
- H05K13/0408—Incorporating a pick-up tool
- H05K13/0409—Sucking devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68359—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
- H01L2221/6839—Separation by peeling using peeling wedge or knife or bar
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Die Bonding (AREA)
- Dicing (AREA)
Abstract
Description
Claims (20)
- ボンディング設備においてダイを移送するための装置であって、
ダイシングテープに付着したダイを下部から押し上げるエジェクターと、
前記エジェクターの上昇又は下降を制御するエジェクター制御部と、
前記エジェクターの内側に位置して真空圧を印加するための気体の流動経路を形成する気体流動部と、
前記気体流動部を介して前記真空圧が加わるように制御する気流制御部と、
前記エジェクターの外側に位置し、真空圧を用いて前記ダイシングテープを吸着するテープ吸着部と、
前記ダイを上部から吸着して移送するピッカーと、
前記ピッカーの昇降駆動を制御するピッカー制御部と、を含み、
前記ピッカー制御部は、前記ピッカーが前記ダイの上端に接触するように前記ピッカーを下降させ、
前記ピッカーが前記ダイの上端に接触した状態で、前記エジェクター制御部及び前記ピッカー制御部は、前記エジェクター及び前記ピッカーを第1高さだけ上昇させ、
前記気流制御部によって下方に真空圧が印加された状態で、前記ピッカー制御部は、前記ピッカーを第2高さだけ上昇させる、装置。 - 前記気流制御部は、前記ピッカーが下降する間に下方に真空圧が印加されるように制御することを特徴とする、請求項1に記載の装置。
- 前記気体流動部は、前記ダイに空気圧が印加されるための経路を形成し、
前記気流制御部は、前記空気圧が前記気体流動部を介して印加されるように制御し、前記ピッカーが前記エジェクターから離隔するように前記第2高さだけ上昇した状態で上方に空気圧を印加する、請求項1に記載の装置。 - 前記気流制御部は、前記エジェクター及び前記ピッカーが前記第1高さだけ上昇する間に下方に真空圧が印加されるように制御することを特徴とする、請求項1に記載の装置。
- 前記エジェクターは、前記気体流動部を囲むように形成された第1エジェクターと、
前記第1エジェクターを囲むように形成された第2エジェクターと、を含むことを特徴とする、請求項1に記載の装置。 - 前記ピッカー制御部は、前記ピッカーが前記ダイの上端に接触して上昇する間に、前記第1エジェクター及び前記第2エジェクターのうち、上端に位置したエジェクターに対応して一緒に上昇するように、前記ピッカーを制御することを特徴とする、請求項5に記載の装置。
- 前記エジェクター制御部は、
前記第1エジェクター及び前記第2エジェクターを前記第1高さだけ上昇させ、
前記第1エジェクターを固定させた状態で前記第2エジェクターを前記第1高さの中間地点まで下降させることを特徴とする、請求項6に記載の装置。 - 前記エジェクター制御部は、
前記第1エジェクター及び前記第2エジェクターを前記第1高さの中間地点まで上昇させ、
前記第2エジェクターを前記中間地点で固定させた状態で前記第1エジェクターを上昇させることを特徴とする、請求項6に記載の装置。 - 前記第1高さと前記第2高さは、互いに異なるように設定されることを特徴とする、請求項1に記載の装置。
- 前記第2高さは、前記第1高さよりも小さく設定されることを特徴とする、請求項1に記載の装置。
- ボンディング設備においてダイを移送するための方法であって、
ダイシングテープに付着した状態のダイをエジェクターの上部に位置させるステップと、
ピッカーが前記ダイの上端に接触するように前記ピッカーを下降させるステップと、
前記ピッカーが前記ダイの上端に接触した状態で前記エジェクター及び前記ピッカーを第1高さだけ上昇させるステップと、
前記エジェクターの下方に真空圧が印加された状態で前記ピッカーを第2高さだけ上昇させるステップと、を含む、方法。 - 前記ピッカーを下降させるステップは、前記ピッカーが下降する間に下方に真空圧を印加するステップを含むことを特徴とする、請求項11に記載の方法。
- 前記ピッカーを下降させるステップは、前記ピッカーが前記エジェクターから離隔するように前記第2高さだけ上昇した状態で上方に空気圧を印加するステップを含むことを特徴とする、請求項11に記載の方法。
- 前記エジェクター及び前記ピッカーを上昇させるステップは、前記エジェクター及び前記ピッカーが前記第1高さだけ上昇する間に下方に真空圧を印加するステップを含むことを特徴とする、請求項11に記載の方法。
- 前記エジェクターは、前記真空圧又は空気圧が印加される気体流動部を囲むように形成された第1エジェクターと、前記第1エジェクターを囲むように形成された第2エジェクターと、を含み、
前記エジェクター及び前記ピッカーを第1高さだけ上昇させるステップは、前記第1エジェクター及び前記第2エジェクターのうち、上端に位置したエジェクターに対応して一緒に上昇するように、前記ピッカーを制御するステップを含むことを特徴とする、請求項11に記載の方法。 - 前記エジェクター及び前記ピッカーを第1高さだけ上昇させるステップは、
前記第1エジェクター及び前記第2エジェクターを前記第1高さの中間地点まで上昇させるステップと、
前記第2エジェクターを前記中間地点で固定させた状態で前記第1エジェクターを上昇させるステップと、を含むことを特徴とする、請求項15に記載の方法。 - 前記エジェクター及び前記ピッカーを第1高さだけ上昇させるステップは、
前記第1エジェクター及び前記第2エジェクターを前記第1高さだけ上昇させるステップと、
前記第1エジェクターを固定させた状態で前記第2エジェクターを前記第1高さの中間地点まで下降させるステップと、を含むことを特徴とする、請求項15に記載の方法。 - ボンディング設備であって、
個別化されたダイを含むウエハを支持し、前記ダイを選択的に分離させるウエハステージと、
ウエハステージから前記ダイを移送するダイ移送ユニットと、
前記ダイ移送ユニットによって移送された前記ダイが搭載されて前記ダイに対する検査が行われるダイステージと、
前記ダイステージから前記ダイをピックアップし、基板上に前記ダイをボンディングするボンディングユニットと、
前記基板を支持し、ボンディング済みの基板をマガジンに伝達するボンディングステージと、を含み、
前記ウエハステージは、
ダイシングテープに付着した前記ダイを下部から押し上げるエジェクターと、
前記エジェクターの上昇又は下降を制御するエジェクター制御部と、
前記エジェクターの内側に位置して真空圧又は空気圧を印加する気体の流動経路を形成する気体流動部と、
前記気体流動部による前記真空圧又は前記空気圧を制御する気流制御部と、
前記エジェクターの外側に位置し、真空圧を用いて前記ダイシングテープを吸着するテープ吸着部と、を含み、
前記ダイ移送ユニットは、
前記ダイを上部から吸着して移送するピッカーと、
前記ピッカーの昇降駆動を制御するピッカー制御部と、を含み、
前記ピッカー制御部は、前記ピッカーが前記ダイの上端に接触するように前記ピッカーを下降させ、
前記気流制御部は、前記ピッカーが下降する間に下方に真空圧が印加されるように制御し、
前記ピッカーが前記ダイの上端に接触し且つ下方に前記真空圧が印加された状態で、前記エジェクター制御部及び前記ピッカー制御部は、前記エジェクター及び前記ピッカーを第1高さだけ上昇させ、
前記気流制御部によって下方に真空圧が印加された状態で、前記ピッカー制御部は、前記ピッカーを第2高さだけ上昇させ、
前記気流制御部は、前記ピッカーが前記エジェクターから離隔した状態で、上方に空気圧を印加して前記ダイを前記ピッカーに吸着させる、ボンディング設備。 - 前記エジェクターは、前記気体流動部を囲むように形成された第1エジェクターと、
前記第1エジェクターを囲むように形成された第2エジェクターと、を含むことを特徴とする、請求項18に記載のボンディング設備。 - 前記エジェクター制御部は、
前記第1エジェクター及び前記第2エジェクターを前記第1高さの中間地点まで上昇させ、
前記第2エジェクターを前記中間地点で固定させた状態で前記第1エジェクターを上昇させることを特徴とする、請求項19に記載のボンディング設備。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020200146202A KR102635493B1 (ko) | 2020-11-04 | 2020-11-04 | 본딩 설비에서 다이를 이송하기 위한 장치 및 방법 |
KR10-2020-0146202 | 2020-11-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2022075586A true JP2022075586A (ja) | 2022-05-18 |
JP7333807B2 JP7333807B2 (ja) | 2023-08-25 |
Family
ID=81362405
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021179039A Active JP7333807B2 (ja) | 2020-11-04 | 2021-11-01 | ボンディング設備におけるダイ移送のための装置及び方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20220139739A1 (ja) |
JP (1) | JP7333807B2 (ja) |
KR (1) | KR102635493B1 (ja) |
CN (1) | CN114446855A (ja) |
TW (1) | TWI808515B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102023109306A1 (de) | 2022-04-15 | 2023-10-19 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI803343B (zh) * | 2022-06-09 | 2023-05-21 | 梭特科技股份有限公司 | 利用氣流檢測固晶狀態的方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014011416A (ja) * | 2012-07-03 | 2014-01-20 | Panasonic Corp | 半導体チップのピックアップ装置およびピックアップ方法 |
JP2014027246A (ja) * | 2012-07-25 | 2014-02-06 | Samsung Electro-Mechanics Co Ltd | チップエジェクター及びこれを利用したチップ着脱方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4574251B2 (ja) | 2003-09-17 | 2010-11-04 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
CN100565831C (zh) | 2005-08-31 | 2009-12-02 | 芝浦机械电子株式会社 | 半导体芯片的拾取装置及拾取方法 |
JP4616748B2 (ja) | 2005-10-11 | 2011-01-19 | 株式会社新川 | ダイピックアップ装置 |
JP4825637B2 (ja) | 2006-10-31 | 2011-11-30 | 芝浦メカトロニクス株式会社 | 半導体チップのピックアップ装置 |
JP6211955B2 (ja) * | 2014-03-07 | 2017-10-11 | 東芝メモリ株式会社 | 半導体製造装置及び半導体製造方法 |
KR101614204B1 (ko) * | 2014-04-29 | 2016-04-20 | 세메스 주식회사 | 다이 픽업 유닛, 이를 포함하는 다이 본딩 장치 및 방법 |
KR102284149B1 (ko) * | 2014-12-05 | 2021-07-30 | 세메스 주식회사 | 다이 이젝팅 장치 |
KR102034972B1 (ko) * | 2015-06-29 | 2019-10-21 | 미쓰이 가가쿠 토세로 가부시키가이샤 | 반도체 부품 제조용 필름 |
KR102120185B1 (ko) * | 2017-07-26 | 2020-06-08 | 시바우라 메카트로닉스 가부시끼가이샤 | 반도체 칩의 픽업 장치, 반도체 칩의 실장 장치 및 실장 방법 |
JP2020147820A (ja) * | 2019-03-15 | 2020-09-17 | 日東電工株式会社 | 焼結接合用シートおよび基材付き焼結接合用シート |
-
2020
- 2020-11-04 KR KR1020200146202A patent/KR102635493B1/ko active IP Right Grant
-
2021
- 2021-10-26 CN CN202111244975.5A patent/CN114446855A/zh active Pending
- 2021-10-27 TW TW110139939A patent/TWI808515B/zh active
- 2021-11-01 JP JP2021179039A patent/JP7333807B2/ja active Active
- 2021-11-02 US US17/517,432 patent/US20220139739A1/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014011416A (ja) * | 2012-07-03 | 2014-01-20 | Panasonic Corp | 半導体チップのピックアップ装置およびピックアップ方法 |
JP2014027246A (ja) * | 2012-07-25 | 2014-02-06 | Samsung Electro-Mechanics Co Ltd | チップエジェクター及びこれを利用したチップ着脱方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102023109306A1 (de) | 2022-04-15 | 2023-10-19 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung |
Also Published As
Publication number | Publication date |
---|---|
US20220139739A1 (en) | 2022-05-05 |
KR20220060330A (ko) | 2022-05-11 |
KR102635493B1 (ko) | 2024-02-07 |
CN114446855A (zh) | 2022-05-06 |
TWI808515B (zh) | 2023-07-11 |
JP7333807B2 (ja) | 2023-08-25 |
TW202220088A (zh) | 2022-05-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101666276B1 (ko) | 콜릿 및 다이 본더 | |
KR101489054B1 (ko) | 다이본더 및 픽업 방법 및 픽업 장치 | |
KR102495699B1 (ko) | 반도체 제조 장치 및 반도체 장치의 제조 방법 | |
KR101190442B1 (ko) | 다이 이젝팅 방법, 다이 이젝팅 유닛, 다이 픽업 방법 및 다이 픽업 장치 | |
JP2022075586A (ja) | ボンディング設備におけるダイ移送のための装置及び方法 | |
KR101970884B1 (ko) | 반도체 제조 장치 및 반도체 장치의 제조 방법 | |
CN108400096B (zh) | 半导体制造装置及半导体器件的制造方法 | |
JP2000353710A (ja) | ペレットピックアップ装置および半導体装置の製造方法 | |
CN108346585B (zh) | 半导体制造装置及半导体器件的制造方法 | |
KR102490394B1 (ko) | 다이 본딩 장치, 반도체 장치의 제조 방법, 및 박리 장치 | |
KR101897825B1 (ko) | 다이 본딩 장치 | |
JP4735829B2 (ja) | チップ突き上げ装置 | |
JP2015076410A (ja) | ボンディング方法及びダイボンダ | |
JP6941513B2 (ja) | 半導体製造装置および半導体装置の製造方法 | |
TWI779702B (zh) | 晶片頂出器及包含晶片頂出器之晶片接合裝置 | |
JP2013065628A (ja) | ダイボンダ並びにダイピックアップ装置及びダイピックアップ方法 | |
KR20220070985A (ko) | 다이 이송 모듈 및 이를 포함하는 다이 본딩 장치 | |
KR102516448B1 (ko) | 다이 이젝팅 장치 및 이를 포함하는 다이 본딩 설비 | |
JP5826701B2 (ja) | チップ位置決め装置、チップ位置決め方法、およびダイボンダ | |
KR20240048934A (ko) | 다이 본더 | |
KR102654727B1 (ko) | 다이 본딩 방법 및 다이 본딩 장치 | |
KR20220060085A (ko) | 다이 이송 장치 및 방법 | |
JP2012199442A (ja) | ダイボンダ及び半導体製造方法 | |
KR20220097092A (ko) | 다이 이송 모듈 및 이를 포함하는 다이 본딩 장치 | |
KR20240048052A (ko) | 다이 본딩 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20211101 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20221227 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230131 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230426 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230808 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230815 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7333807 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |