JP2022039993A - 基板処理方法、該方法を用いる基板処理装置及び半導体素子製造方法 - Google Patents
基板処理方法、該方法を用いる基板処理装置及び半導体素子製造方法 Download PDFInfo
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Abstract
Description
前記変圧ステップは、前記処理空間に工程ガスを注入して、前記インナーチューブの内圧を第1圧力から常圧よりも高い第2圧力まで増加させる加圧ステップと、前記インナーチューブの内圧を前記第2圧力から第3圧力まで減少させる減圧ステップと、を含み、前記減圧ステップにおける前記インナーチューブへの工程ガス供給流量は、前記加圧ステップの前記インナーチューブへの工程ガス供給流量よりも小さく、前記第3圧力は、常圧よりも小さい基板処理方法を開示する。
前記加圧ステップにおける前記インナーチューブへの工程ガス供給流量よりも小さい。
前記基板に形成された薄膜は、Ti、TiN、W及びWNのいずれかからなっていてもよい。
10 チャンバ
Claims (23)
- 基板処理のための処理空間を形成するチャンバと、前記チャンバに設けられ、基板を支持する基板支持部と、前記基板支持部の上部に設けられ、工程遂行のためのガスを噴射するガス噴射部と、前記処理空間のガスを排気し、圧力を制御するためのバルブと、を含む排気部を含む基板処理装置を用いた基板処理方法であって、
少なくとも1回以上繰り返される変圧ステップを含み、
前記変圧ステップは、
前記処理空間に工程ガスを注入して、前記チャンバの内圧を第1圧力から常圧よりも高い第2圧力まで増加させる加圧ステップと、前記チャンバの内圧を前記第2圧力から第3圧力まで減少させる減圧ステップと、を含み
前記減圧ステップにおける工程ガス供給流量は、前記加圧ステップの工程ガス供給流量よりも小さく、
前記第3圧力は、常圧であることを特徴とする基板処理方法。 - 基板処理のための処理空間を形成するチャンバと、前記チャンバに設けられ、基板を支持する基板支持部と、前記基板支持部の上部に設けられ、工程遂行のためのガスを噴射するガス噴射部と、前記処理空間のガスを排気し、圧力を制御するためのバルブを含む排気部と、を含む基板処理装置を用いた基板処理方法であって、
少なくとも1回以上繰り返される変圧ステップを含み、
前記変圧ステップは、
前記処理空間に工程ガスを注入して、前記チャンバの内圧を第1圧力から常圧よりも高い第2圧力まで増加させる加圧ステップと、前記チャンバの内圧を前記第2圧力から第3圧力まで減少させる減圧ステップと、を含み、
前記減圧ステップにおける工程ガス供給流量は、前記加圧ステップの工程ガス供給流量よりも小さく、
前記第3圧力は、常圧よりも小さいことを特徴とする基板処理方法。 - 前記減圧ステップは、
前記チャンバの内圧を前記第2圧力から常圧まで減少させる第1減圧ステップと、前記チャンバの内圧を常圧から常圧よりも低い前記第3圧力まで減少させる第2減圧ステップと、を含み、
前記第2減圧ステップは、真空ポンプを利用して前記チャンバ10の内圧が調節されることを特徴とする請求項2に記載の基板処理方法。 - 前記減圧ステップは、
前記第1減圧ステップの内圧が常圧に達し、前記第2減圧ステップに転換される前、
前記チャンバの内圧を、予め設定された時間の間常圧に維持する常圧維持ステップを含むことを特徴とする請求項3に記載の基板処理方法。 - 前記加圧ステップが前記第2圧力に達し、前記減圧ステップに転換される前、
前記チャンバの内圧を、予め設定された時間の間前記第2圧力に維持する圧力維持ステップを含むことを特徴とする請求項1~4のいずれか1項に記載の基板処理方法。 - 前記減圧ステップは、
前記処理空間への工程ガス供給を遮断し、排気して、前記チャンバの内圧を減少させることを特徴とする請求項1~4のいずれか1項に記載の基板処理方法。 - 前記圧力維持ステップにおける工程ガス供給流量は、
前記加圧ステップにおける工程ガス供給流量よりも小さいことを特徴とする請求項5に記載の基板処理方法。 - 前記基板に形成された薄膜は、Ti、TiN、W及びWNのいずれか一つからなることを特徴とする請求項1~4のいずれか1項に記載の基板処理方法。
- 前記工程ガスは、H2、D2及びNH3のいずれか一つ又はそれらの組み合わせであることを特徴とする請求項1~4のいずれか1項に記載の基板処理方法。
- 前記変圧ステップは、400℃以上800℃以下の温度で行われることを特徴とする請求項1~4のいずれか1項に記載の基板処理方法。
- 請求項1~4のいずれか1項に記載の基板処理方法を行うことを特徴とする基板処理装置であって、
前記変圧ステップを遂行できるように、前記処理空間の圧力を制御するガスユーティリティを含むことを特徴とする基板処理装置。 - 基板処理のための処理空間を形成するチャンバと、前記チャンバに設けられ、基板を支持する基板支持部と、前記基板支持部の上部に設けられ、工程遂行のためのガスを噴射するガス噴射部と、前記処理空間のガスを排気し、圧力を制御するためのバルブを含む排気部と、を含み、前記チャンバは、内部に保護空間を形成し、下部に第1入口が形成されたアウターチューブと、内部に前記処理空間を形成し、下部に第2入口とが形成され、一部が前記アウターチューブに受容され、前記第2入口が形成された部分は、前記アウターチューブ外側に突出されたインナーチューブと、を含むことを特徴とする基板処理装置を用いた基板処理方法であって、
少なくとも1回以上繰り返される変圧ステップを含み、
前記変圧ステップは、
前記処理空間に工程ガスを注入して、前記インナーチューブの内圧を第1圧力から常圧よりも高い第2圧力まで増加させる加圧ステップと、前記インナーチューブの内圧を前記第2圧力から第3圧力まで減少させる減圧ステップと、を含み、
前記減圧ステップにおける前記インナーチューブへの工程ガス供給流量は、前記加圧ステップの前記インナーチューブへの工程ガス供給流量よりも小さく、
前記第3圧力は、常圧であることを特徴とする基板処理方法。 - 基板処理のための処理空間を形成するチャンバと、前記チャンバに設けられ、基板を支持する基板支持部と、前記基板支持部の上部に設けられ、工程遂行のためのガスを噴射するガス噴射部と、前記処理空間のガスを排気し、圧力を制御するためのバルブを含む排気部と、を含み、前記チャンバは、内部に第1内圧を有する保護空間を形成し、下部に第1入口が形成されたアウターチューブと、内部に内圧を有する前記処理空間を形成し、下部に第2入口が形成され、一部が前記アウターチューブに受容され、前記第2入口が形成された部分は、前記アウターチューブ外側に突出されたインナーチューブと、を含むことを特徴とする基板処理装置を用いた基板処理方法であって、
少なくとも1回以上繰り返される変圧ステップを含み、
前記変圧ステップは、
前記処理空間に工程ガスを注入して、前記インナーチューブの内圧を第1圧力から常圧よりも高い第2圧力まで増加させる加圧ステップと、前記インナーチューブの内圧を前記第2圧力から第3圧力まで減少させる減圧ステップと、を含み、
前記減圧ステップにおける前記インナーチューブへの工程ガス供給流量は、前記加圧ステップの前記インナーチューブへの工程ガス供給流量よりも小さく、
前記第3圧力は、常圧よりも小さいことを特徴とする基板処理方法。 - 前記減圧ステップは、
前記インナーチューブの内圧を前記第2圧力から常圧まで減少させる第1減圧ステップと、前記インナーチューブ内圧を常圧から常圧よりも低い前記第3圧力まで減少させる第2減圧ステップと、を含み、
前記第2減圧ステップは、真空ポンプを利用して前記インナーチューブの内圧が調節されることを特徴とする請求項13に記載の基板処理方法。 - 前記減圧ステップは、
前記第1減圧ステップの内圧が常圧に達し、前記第2減圧ステップに転換される前、
前記インナーチューブの内圧を、常圧に予め設定された時間の間維持する常圧維持ステップを含むことを特徴とする請求項14に記載の基板処理方法。 - 前記加圧ステップの内圧が前記第2圧力に達し、前記減圧ステップに転換される前、
前記インナーチューブの内圧を、予め設定された時間の間前記第2圧力に維持する圧力維持ステップを含むことを特徴とする請求項12~15のいずれか1項に記載の基板処理方法。 - 前記減圧ステップは、
前記処理空間への工程ガス供給を遮断し、排気して、前記インナーチューブの内圧を減少させることを特徴とする請求項12~15のいずれか1項に記載の基板処理方法。 - 前記圧力維持ステップにおける前記インナーチューブへの工程ガス供給流量は、
前記加圧ステップにおける前記インナーチューブへの工程ガス供給流量よりも小さいことを特徴とする請求項16に記載の基板処理方法。 - 前記基板に形成された薄膜は、Ti、TiN、W及びWNのいずれか一つからなることを特徴とする請求項12~15のいずれか1項に記載の基板処理方法。
- 前記工程ガスは、H2、D2及びNH3のいずれか一つ又はそれらの組み合わせであることを特徴とする請求項12~15のいずれか1項に記載の基板処理方法。
- 前記変圧ステップは、400℃以上800℃以下の温度で行われることを特徴とする請求項12~15のいずれか1項に記載の基板処理方法。
- 請求項12~15のいずれか1項に記載の基板処理方法を行うことを特徴とする基板処理装置であって、
前記アウターチューブの下部を支持し、前記保護空間と連結される第1内部空間を形成し、側壁周りにアウターガス供給口及びアウターガス排気口が形成されるアウターマニホールドと、
前記インナーチューブの下部を支持し、前記保護空間と連結される第2内部空間を形成し、側壁周りにインナーガス供給口及びインナーガス排気口が形成されるインナーマニホールドと、
前記変圧ステップを遂行できるように、前記処理空間及び保護空間の圧力をそれぞれ制御するガスユーティリティと、
を含むことを特徴とする基板処理装置。 - 表面に薄膜を形成する蒸着ステップと、前記蒸着ステップの後、薄膜特性を改善する基板処理ステップと、を含む半導体素子製造方法であって、
前記基板処理ステップは、1回以上行われており、請求項1~4及び請求項12~15のいずれか1項に記載の基板処理方法によって行われることを特徴とする半導体素子製造方法。
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