JP2022032541A - 半導体発光装置 - Google Patents
半導体発光装置 Download PDFInfo
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- JP2022032541A JP2022032541A JP2020136406A JP2020136406A JP2022032541A JP 2022032541 A JP2022032541 A JP 2022032541A JP 2020136406 A JP2020136406 A JP 2020136406A JP 2020136406 A JP2020136406 A JP 2020136406A JP 2022032541 A JP2022032541 A JP 2022032541A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 128
- 230000004888 barrier function Effects 0.000 claims abstract description 49
- 239000000463 material Substances 0.000 claims abstract description 26
- 239000013078 crystal Substances 0.000 claims description 56
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 28
- 239000000203 mixture Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 description 13
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 10
- 229910052799 carbon Inorganic materials 0.000 description 10
- 239000002994 raw material Substances 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 150000001721 carbon Chemical group 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- 238000005215 recombination Methods 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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Abstract
Description
Claims (6)
- 第1導電形の第1半導体層と、
前記第1半導体層上に設けられた第2導電形の第2半導体層と、
前記第1半導体層と前記第2半導体層との間に設けられ、量子井戸層と、前記量子井戸層に隣接した障壁層と、を含む発光層と、
を備え、
前記量子井戸層は、前記第1半導体層の材料の格子定数よりも大きい格子定数を有する材料を含み、
前記障壁層は、第1領域と、第2領域と、を含み、
前記第2領域は、前記量子井戸層と前記第1領域との間に設けられ、
前記障壁層の前記第1領域は、前記量子井戸層の材料よりもバンドギャップが広く、前記第1半導体層の材料の格子定数よりも小さい格子定数を有する材料を含み、
前記障壁層の前記第2領域は、前記第1領域の材料よりもバンドギャップが広い材料を含む、半導体発光装置。 - 前記第1領域は、前記第1半導体層から前記第2半導体層に向かう積層方向の第1幅を有し、前記第2領域は、前記積層方向の第2幅を有し、前記第1幅は、前記第2幅よりも広い、請求項1記載の半導体発光装置。
- 前記発光層は、前記第1半導体層と前記第2半導体層との間に順方向電圧が印加された場合の電子の移動方向に沿って、前記量子井戸層と、前記障壁層の前記第2領域と、前記障壁層の前記第1領域と、が順に並ぶ積層構造を有する、請求項1または2に記載の半導体発光装置。
- 前記障壁層の第2領域は、前記量子井戸層に接するように設けられる請求項1~3のいずれか1つに記載の半導体発光装置。
- 前記量子井戸層は、組成式InxGa1-xAs(0<x<1)で表される3元混晶を含み、
前記障壁層の前記第1領域は、組成式GaAs1-yPy(0<y<1)で表される3元混晶を含み、前記第2領域は、組成式AlzGa1-zAs1-yPy(0<y<1、0<z<1)で表される4元混晶を含む、請求項1~4のいずれか1つに記載の半導体発光装置。 - 前記量子井戸層は、組成式InxGa1-xAs(0<x<1)で表される3元混晶を含み、
前記障壁層の前記第1領域は、組成式GaAs1-yPy(0<y<1)で表される3元混晶を含み、前記第2領域は、組成式AlzGa1-zAs(0<z<1)で表される3元混晶を含む、請求項1~5のいずれか1つに記載の半導体発光装置。
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0563290A (ja) * | 1991-08-30 | 1993-03-12 | Toshiba Corp | 半導体レーザ |
JP2007201040A (ja) * | 2006-01-25 | 2007-08-09 | Anritsu Corp | 半導体発光素子 |
JP2019204951A (ja) * | 2018-05-21 | 2019-11-28 | エイユーケー コープ. | 赤外線発光ダイオード及びその製造方法 |
JP2020102494A (ja) * | 2018-12-20 | 2020-07-02 | スタンレー電気株式会社 | 半導体発光素子及びその製造方法 |
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2020
- 2020-08-12 JP JP2020136406A patent/JP7319618B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0563290A (ja) * | 1991-08-30 | 1993-03-12 | Toshiba Corp | 半導体レーザ |
JP2007201040A (ja) * | 2006-01-25 | 2007-08-09 | Anritsu Corp | 半導体発光素子 |
JP2019204951A (ja) * | 2018-05-21 | 2019-11-28 | エイユーケー コープ. | 赤外線発光ダイオード及びその製造方法 |
JP2020102494A (ja) * | 2018-12-20 | 2020-07-02 | スタンレー電気株式会社 | 半導体発光素子及びその製造方法 |
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