JP2022032022A - 透明導電膜及びその製造方法 - Google Patents
透明導電膜及びその製造方法 Download PDFInfo
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- silver nanowire
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 239000010410 layer Substances 0.000 claims abstract description 106
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 101
- 239000002042 Silver nanowire Substances 0.000 claims abstract description 101
- 239000011241 protective layer Substances 0.000 claims abstract description 65
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 25
- 238000000059 patterning Methods 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims description 23
- 239000011347 resin Substances 0.000 claims description 17
- 229920005989 resin Polymers 0.000 claims description 17
- 239000004925 Acrylic resin Substances 0.000 claims description 10
- 229920000178 Acrylic resin Polymers 0.000 claims description 10
- 239000000654 additive Substances 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 10
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 claims description 9
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 claims description 9
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 9
- 239000002904 solvent Substances 0.000 claims description 9
- -1 aliphatic polyol compound Chemical class 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 7
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 6
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 6
- 230000000996 additive effect Effects 0.000 claims description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- 239000000178 monomer Substances 0.000 claims description 6
- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-Dichloroethane Chemical compound ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 claims description 3
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 claims description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 3
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims description 3
- 239000003086 colorant Substances 0.000 claims description 3
- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical compound OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 claims description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 3
- 238000005424 photoluminescence Methods 0.000 claims description 3
- 239000003504 photosensitizing agent Substances 0.000 claims description 3
- 229920000728 polyester Polymers 0.000 claims description 3
- 229920005862 polyol Polymers 0.000 claims description 3
- KCTAWXVAICEBSD-UHFFFAOYSA-N prop-2-enoyloxy prop-2-eneperoxoate Chemical compound C=CC(=O)OOOC(=O)C=C KCTAWXVAICEBSD-UHFFFAOYSA-N 0.000 claims description 3
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 3
- 125000001424 substituent group Chemical group 0.000 claims description 3
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 2
- 238000002834 transmittance Methods 0.000 claims description 2
- 239000006097 ultraviolet radiation absorber Substances 0.000 claims description 2
- 230000002950 deficient Effects 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 13
- 229910052802 copper Inorganic materials 0.000 description 13
- 239000010949 copper Substances 0.000 description 13
- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 150000008062 acetophenones Chemical class 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- MPQXHAGKBWFSNV-UHFFFAOYSA-N oxidophosphanium Chemical class [PH3]=O MPQXHAGKBWFSNV-UHFFFAOYSA-N 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- ILJSQTXMGCGYMG-UHFFFAOYSA-N triacetic acid Chemical compound CC(=O)CC(=O)CC(O)=O ILJSQTXMGCGYMG-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000002888 zwitterionic surfactant Substances 0.000 description 1
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
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- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Theoretical Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Human Computer Interaction (AREA)
- Manufacturing & Machinery (AREA)
- Manufacturing Of Electric Cables (AREA)
- Laminated Bodies (AREA)
- Non-Insulated Conductors (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Materials For Photolithography (AREA)
Abstract
Description
3 保護層
4 銅層
5 フォトレジスト
11 表示領域
12 非表示領域
21 第1の銀ナノワイヤ層
22 第2の銀ナノワイヤ層
41 電気回路
1000 透明導電膜
2000 透明導電膜
3000 透明導電膜
4000 透明導電膜
Claims (18)
- 基板と、
前記基板上に配置された第1の銀ナノワイヤ層と、
前記第1の銀ナノワイヤ層上に配置された保護層と、を備え、
前記保護層は、パターン化可能なフォトレジスト材料を含み、前記第1の銀ナノワイヤ層及び前記保護層は、同一のパターンを有する、
透明導電膜。 - 前記パターン化可能なフォトレジスト材料は、ポジ型フォトレジスト材料又はネガ型フォトレジスト材料である、請求項1に記載の透明導電膜。
- 前記パターン化可能なフォトレジスト材料は、アクリル樹脂を15~30重量%、溶媒を65~80重量%、光開始剤を2~5重量%及び添加剤を0~3重量%を含む、請求項1又は2に記載の透明導電膜。
- 前記アクリル樹脂は、モノマー、オリゴマー及びアルカリ可溶性樹脂を含み、前記モノマーは、脂肪族ポリオール化合物、アクリレートを有する不飽和カルボン酸、及びそれらの混合物からなる群から選択される少なくとも1つであり、前記オリゴマーは、ウレタンアクリレートオリゴマー、エポキシアクリレートオリゴマー、ポリエステルアクリレートオリゴマー及びそれらの混合物からなる群から選択される少なくとも1つであり、前記アルカリ可溶性樹脂は、不飽和置換基を有する樹脂、フェニル基を有する樹脂、カルボキシル基を有する樹脂及びそれらの混合物からなる群から選択される少なくとも1つである、請求項3に記載の透明導電膜。
- 前記溶媒は、アセトン、メチルエチルケトン、シクロヘキサン、プロピレングリコールメチルエーテルアセテート、プロピレングリコールメチルエーテル、酢酸エチル、エチレンジクロリド、テトラヒドロフラン、トルエン及びエーテルからなる群から選択される少なくとも1つである、請求項3又は4に記載の透明導電膜。
- 前記添加剤は、レベリング剤、着色剤、紫外線吸収剤、光増感剤及びフォトルミネッセンス剤からなる群から選択される少なくとも1つである、請求項3~5のいずれか一項に記載の透明導電膜。
- 前記保護層の厚さが0.2~2μmである、請求項1~6のいずれか一項に記載の透明導電膜。
- 前記透明導電膜の透過率が90%超である、請求項1~7のいずれか一項に記載の透明導電膜。
- 前記透明導電膜の抵抗値が5~100オームである、請求項1~8のいずれか一項に記載の透明導電膜。
- 前記基板は、表示領域と非表示領域とを備え、前記第1の銀ナノワイヤ層は、前記表示領域に配置される、請求項1~9のいずれか一項に記載の透明導電膜。
- 前記基板の前記非表示領域に配置された電気回路をさらに備え、前記電気回路は、前記第1の銀ナノワイヤ層に電気的に接続される、請求項10に記載の透明導電膜。
- 前記基板の前記非表示領域に配置された第2の銀ナノワイヤ層をさらに備え、前記電気回路及び前記第2の銀ナノワイヤ層は重なり合い、同一のパターンを有する、請求項11に記載の透明導電膜。
- 前記第2の銀ナノワイヤ層は、前記基板と前記電気回路との間に配置されるか、又は、前記電気回路上に配置される、請求項12に記載の透明導電膜。
- 基板の準備工程と、
前記基板上への第1の銀ナノワイヤ層の形成工程と、
前記第1の銀ナノワイヤ層上への保護層の形成工程と、
前記保護層及び前記第1の銀ナノワイヤ層のパターニング工程と、を備え、
前記保護層は、パターン化可能なフォトレジスト材料を含み、前記保護層及び前記第1の銀ナノワイヤ層は、同一のパターンを有する、
透明導電膜の製造方法。 - 前記パターニング工程は、
露光処理及び現像処理による前記保護層のパターニング工程と、
前記第1の銀ナノワイヤ層をパターニングするためのエッチング又は非エッチング方法による、前記第1の銀ナノワイヤ層の露出部分の除去工程と、を備える、請求項14に記載の透明導電膜の製造方法。 - 前記パターニング工程は、露光処理及び現像処理によって、前記保護層及び前記第1の銀ナノワイヤ層を同時にパターニングすることを含む、請求項14又は15に記載の製造方法。
- 前記パターン化可能なフォトレジスト材料が、ポジ型フォトレジスト材料又はネガ型フォトレジスト材料を含む、請求項14~16のいずれか一項に記載の製造方法。
- 前記保護層が、アクリル樹脂を15~30重量%、溶媒を65~80重量%、光開始剤を2~5重量%及び添加剤を0~3重量%を少なくとも含む、請求項14~17のいずれか一項に記載の製造方法。
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CN202010794201.9A CN114068070A (zh) | 2020-08-10 | 2020-08-10 | 透明导电薄膜及其制备方法 |
CN202010794201.9 | 2020-08-10 |
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WO2022181016A1 (ja) * | 2021-02-26 | 2022-09-01 | 富士フイルム株式会社 | 導電パターンの製造方法、及び、電子デバイスの製造方法 |
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JP2015191276A (ja) * | 2014-03-27 | 2015-11-02 | デクセリアルズ株式会社 | 積層体、積層体の製造方法、静電容量型タッチパネル及び画像表示装置 |
WO2016167228A1 (ja) * | 2015-04-15 | 2016-10-20 | 日立化成株式会社 | 感光性導電フィルム、導電パターンの形成方法、導電パターン付き基材、及びタッチパネルセンサ |
WO2020137797A1 (ja) * | 2018-12-27 | 2020-07-02 | 富士フイルム株式会社 | 導電性転写材料、パターンつき基板の製造方法、積層体、及びタッチパネル |
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EP2672369A4 (en) * | 2011-02-04 | 2014-11-12 | Shinetsu Polymer Co | CAPACITIVE SENSING SHEET AND METHOD FOR MANUFACTURING THE SAME |
KR102211863B1 (ko) * | 2013-10-15 | 2021-02-04 | 삼성디스플레이 주식회사 | 터치 패널 및 터치 패널의 제조 방법 |
KR20190123259A (ko) * | 2017-03-01 | 2019-10-31 | 가부시키가이샤 아데카 | 중합성 조성물 및 블랙 칼럼 스페이서용 감광성 조성물 |
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JP2015191276A (ja) * | 2014-03-27 | 2015-11-02 | デクセリアルズ株式会社 | 積層体、積層体の製造方法、静電容量型タッチパネル及び画像表示装置 |
WO2016167228A1 (ja) * | 2015-04-15 | 2016-10-20 | 日立化成株式会社 | 感光性導電フィルム、導電パターンの形成方法、導電パターン付き基材、及びタッチパネルセンサ |
WO2020137797A1 (ja) * | 2018-12-27 | 2020-07-02 | 富士フイルム株式会社 | 導電性転写材料、パターンつき基板の製造方法、積層体、及びタッチパネル |
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WO2022181016A1 (ja) * | 2021-02-26 | 2022-09-01 | 富士フイルム株式会社 | 導電パターンの製造方法、及び、電子デバイスの製造方法 |
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