JP2021535702A5 - - Google Patents

Info

Publication number
JP2021535702A5
JP2021535702A5 JP2021535482A JP2021535482A JP2021535702A5 JP 2021535702 A5 JP2021535702 A5 JP 2021535702A5 JP 2021535482 A JP2021535482 A JP 2021535482A JP 2021535482 A JP2021535482 A JP 2021535482A JP 2021535702 A5 JP2021535702 A5 JP 2021535702A5
Authority
JP
Japan
Prior art keywords
driver
gate
gate driver
terminal connected
transistor
Prior art date
Application number
JP2021535482A
Other languages
English (en)
Japanese (ja)
Other versions
JP7499255B2 (ja
JPWO2020047119A5 (https=
JP2021535702A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2019/048600 external-priority patent/WO2020047119A1/en
Publication of JP2021535702A publication Critical patent/JP2021535702A/ja
Publication of JP2021535702A5 publication Critical patent/JP2021535702A5/ja
Publication of JPWO2020047119A5 publication Critical patent/JPWO2020047119A5/ja
Application granted granted Critical
Publication of JP7499255B2 publication Critical patent/JP7499255B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2021535482A 2018-08-28 2019-08-28 帰還を有する能動型プリドライバを使用するＧａＮドライバ Active JP7499255B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862723801P 2018-08-28 2018-08-28
US62/723,801 2018-08-28
PCT/US2019/048600 WO2020047119A1 (en) 2018-08-28 2019-08-28 Gan driver using active pre-driver with feedback

Publications (4)

Publication Number Publication Date
JP2021535702A JP2021535702A (ja) 2021-12-16
JP2021535702A5 true JP2021535702A5 (https=) 2022-09-05
JPWO2020047119A5 JPWO2020047119A5 (https=) 2022-09-05
JP7499255B2 JP7499255B2 (ja) 2024-06-13

Family

ID=69640268

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021535482A Active JP7499255B2 (ja) 2018-08-28 2019-08-28 帰還を有する能動型プリドライバを使用するＧａＮドライバ

Country Status (7)

Country Link
US (1) US11038503B2 (https=)
EP (1) EP3844874A4 (https=)
JP (1) JP7499255B2 (https=)
KR (1) KR102508184B1 (https=)
CN (1) CN112889220B (https=)
TW (1) TWI716980B (https=)
WO (1) WO2020047119A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7275984B2 (ja) * 2019-08-09 2023-05-18 オムロン株式会社 駆動回路
WO2023107917A1 (en) 2021-12-10 2023-06-15 Efficient Power Conversion Corporation Pre-driven bootstrapping drivers
JP7668252B2 (ja) * 2022-09-08 2025-04-24 株式会社京三製作所 高周波電源装置
TWI876726B (zh) * 2023-12-01 2025-03-11 立積電子股份有限公司 邏輯電路和包含邏輯電路的前端模組
WO2025245784A1 (en) * 2024-05-30 2025-12-04 Yangtze Memory Technologies Co., Ltd. Driving circuit, memory device using driving circuit, and memory system

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4414502A (en) * 1981-07-20 1983-11-08 Advanced Micro Devices, Inc. Current source circuit
DE3835119A1 (de) * 1988-10-14 1990-04-19 Siemens Ag Leistungsverstaerkerschaltung fuer integrierte digitalschaltungen
US5272432A (en) * 1991-05-01 1993-12-21 Winbond Electronics N.A. Corporation DAC current source with stabilizing bias
US5796276A (en) * 1994-12-30 1998-08-18 Sgs-Thomson Microelectronics, Inc. High-side-driver gate drive circuit
KR100205233B1 (ko) 1996-06-14 1999-07-01 김탁중 게이트 구동회로
JP4935294B2 (ja) 2006-10-18 2012-05-23 富士電機株式会社 絶縁ゲート型デバイスの駆動回路
US7639081B2 (en) * 2007-02-06 2009-12-29 Texas Instuments Incorporated Biasing scheme for low-voltage MOS cascode current mirrors
EP2207257B1 (en) 2007-10-02 2016-11-16 Mitsubishi Electric Corporation Gate driving circuit
JP5146460B2 (ja) * 2007-11-16 2013-02-20 富士通株式会社 バイアス回路、及びバイアス回路に対する制御方法
US7969226B2 (en) 2009-05-07 2011-06-28 Semisouth Laboratories, Inc. High temperature gate drivers for wide bandgap semiconductor power JFETs and integrated circuits including the same
US8253479B2 (en) * 2009-11-19 2012-08-28 Freescale Semiconductor, Inc. Output driver circuits for voltage regulators
EP2426820B1 (en) * 2010-09-07 2013-09-04 Dialog Semiconductor GmbH Circuit controlling HS-NMOS power switches with slew-rate limitation
US8742803B2 (en) * 2012-09-26 2014-06-03 Broadcom Corporation Output driver using low voltage transistors
JP6286899B2 (ja) 2013-07-03 2018-03-07 富士電機株式会社 絶縁ゲート型半導体素子の駆動装置および電力変換装置
US9960620B2 (en) * 2014-09-16 2018-05-01 Navitas Semiconductor, Inc. Bootstrap capacitor charging circuit for GaN devices
US9874893B2 (en) * 2015-05-27 2018-01-23 Analog Devices, Inc. Self-biased multiple cascode current mirror circuit
US9722599B1 (en) * 2016-01-28 2017-08-01 Infineon Technologies Austria Ag Driver for the high side switch of the cascode switch
JP7080185B2 (ja) * 2016-05-25 2022-06-03 エフィシエント パワー コンヴァーション コーポレーション エンハンスメントモードｆｅｔドライバｉｃ

Similar Documents

Publication Publication Date Title
JP2021535702A5 (https=)
US10535977B1 (en) GaNFET as energy store for fast laser pulser
US9705489B2 (en) Cascode transistor circuit
WO2012053264A1 (ja) ドライバ回路
US11483001B2 (en) Drive circuit and drive method of normally-on transistor
CN110071715B (zh) 使用低压器件的高量程正电压电平移位器
JP6176826B2 (ja) 起動回路を有する完全相補型自己バイアス差動受信機
JP5219736B2 (ja) 高周波回路のスイッチング方法及び高周波回路
JP7486522B2 (ja) ゲート電流再使用を伴うＧａＮレーザダイオード駆動ＦＥＴ
JP2006042136A (ja) 終端回路、半導体装置、及び電子機器
KR20020067531A (ko) 부트스트랩형 이중 게이트 클래스 ｅ 증폭기 회로
JP7275984B2 (ja) 駆動回路
JPWO2020047119A5 (https=)
US10819236B2 (en) Control of a power stage of a switched-mode power supply
CA3152736C (en) Gallium nitride field-effect transistors (GANFETs) as an energy bank for a fast laser pulse generator
KR102112794B1 (ko) 스위칭 회로
US8044720B2 (en) Amplification circuit
JP2005518698A5 (https=)
JP6650800B2 (ja) バイアス回路、ａｂ級アンプ及びバイアス電圧生成方法
JP2013183430A (ja) ＧａＮＦＥＴ用バイアス回路
JP2001127616A (ja) バッファ回路
JPWO2023218988A5 (https=)
KR20220160732A (ko) 모스 전계 효과 트랜지스터를 이용한 스위칭 회로
HK40008340B (zh) Ganfet作为用於快速激光脉冲发生器的储能器
JP2009239416A (ja) ドライバ回路、立ち上がり電圧及び立ち下がり電圧の制御方法