JP2021532574A5 - - Google Patents

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Publication number
JP2021532574A5
JP2021532574A5 JP2021500910A JP2021500910A JP2021532574A5 JP 2021532574 A5 JP2021532574 A5 JP 2021532574A5 JP 2021500910 A JP2021500910 A JP 2021500910A JP 2021500910 A JP2021500910 A JP 2021500910A JP 2021532574 A5 JP2021532574 A5 JP 2021532574A5
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JP
Japan
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signal
state
parameter
parameter level
level
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JP2021500910A
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English (en)
Japanese (ja)
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JP2021532574A (ja
JP7461333B2 (ja
JPWO2020018701A5 (https=
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Priority claimed from US16/040,502 external-priority patent/US10504744B1/en
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Priority to JP2024046425A priority Critical patent/JP7791924B2/ja
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JP2021500910A 2018-07-19 2019-07-17 高アスペクト比の誘電体エッチングを達成するための３つ以上の状態 Active JP7461333B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024046425A JP7791924B2 (ja) 2018-07-19 2024-03-22 高アスペクト比の誘電体エッチングを達成するための３つ以上の状態

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/040,502 2018-07-19
US16/040,502 US10504744B1 (en) 2018-07-19 2018-07-19 Three or more states for achieving high aspect ratio dielectric etch
PCT/US2019/042255 WO2020018701A1 (en) 2018-07-19 2019-07-17 Three or more states for achieving high aspect ratio dielectric etch

Related Child Applications (1)

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JP2024046425A Division JP7791924B2 (ja) 2018-07-19 2024-03-22 高アスペクト比の誘電体エッチングを達成するための３つ以上の状態

Publications (4)

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JP2021532574A JP2021532574A (ja) 2021-11-25
JPWO2020018701A5 JPWO2020018701A5 (https=) 2022-07-27
JP2021532574A5 true JP2021532574A5 (https=) 2022-07-27
JP7461333B2 JP7461333B2 (ja) 2024-04-03

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JP2021500910A Active JP7461333B2 (ja) 2018-07-19 2019-07-17 高アスペクト比の誘電体エッチングを達成するための３つ以上の状態
JP2024046425A Active JP7791924B2 (ja) 2018-07-19 2024-03-22 高アスペクト比の誘電体エッチングを達成するための３つ以上の状態

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Country Status (5)

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US (2) US10504744B1 (https=)
JP (2) JP7461333B2 (https=)
KR (2) KR102891958B1 (https=)
TW (1) TWI846712B (https=)
WO (1) WO2020018701A1 (https=)

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