TWI846712B - 用於達成高深寬比介電質蝕刻的三個以上狀態 - Google Patents

用於達成高深寬比介電質蝕刻的三個以上狀態 Download PDF

Info

Publication number
TWI846712B
TWI846712B TW108125058A TW108125058A TWI846712B TW I846712 B TWI846712 B TW I846712B TW 108125058 A TW108125058 A TW 108125058A TW 108125058 A TW108125058 A TW 108125058A TW I846712 B TWI846712 B TW I846712B
Authority
TW
Taiwan
Prior art keywords
state
signal
parameter
level
time
Prior art date
Application number
TW108125058A
Other languages
English (en)
Chinese (zh)
Other versions
TW202032616A (zh
Inventor
匠 柳川
尼基 朵爾
蘭迪普 包密克
艾瑞克 哈得森
菲力克斯 萊布 柯札維奇
約翰 霍藍德
艾力西 瑪瑞卡塔諾
布萊佛 Ｊ 琳戴克
Original Assignee
美商蘭姆研究公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商蘭姆研究公司 filed Critical 美商蘭姆研究公司
Publication of TW202032616A publication Critical patent/TW202032616A/zh
Application granted granted Critical
Publication of TWI846712B publication Critical patent/TWI846712B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
TW108125058A 2018-07-19 2019-07-16 用於達成高深寬比介電質蝕刻的三個以上狀態 TWI846712B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/040,502 2018-07-19
US16/040,502 US10504744B1 (en) 2018-07-19 2018-07-19 Three or more states for achieving high aspect ratio dielectric etch

Publications (2)

Publication Number Publication Date
TW202032616A TW202032616A (zh) 2020-09-01
TWI846712B true TWI846712B (zh) 2024-07-01

Family

ID=68766060

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108125058A TWI846712B (zh) 2018-07-19 2019-07-16 用於達成高深寬比介電質蝕刻的三個以上狀態

Country Status (5)

Country Link
US (2) US10504744B1 (https=)
JP (2) JP7461333B2 (https=)
KR (2) KR102891958B1 (https=)
TW (1) TWI846712B (https=)
WO (1) WO2020018701A1 (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019010312A1 (en) * 2017-07-07 2019-01-10 Advanced Energy Industries, Inc. INTER-PERIODIC CONTROL SYSTEM FOR PLASMA POWER SUPPLY SYSTEM AND METHOD OF OPERATION
US11615943B2 (en) * 2017-07-07 2023-03-28 Advanced Energy Industries, Inc. Inter-period control for passive power distribution of multiple electrode inductive plasma source
US11651939B2 (en) * 2017-07-07 2023-05-16 Advanced Energy Industries, Inc. Inter-period control system for plasma power delivery system and method of operating same
US10504744B1 (en) * 2018-07-19 2019-12-10 Lam Research Corporation Three or more states for achieving high aspect ratio dielectric etch
WO2020068107A1 (en) * 2018-09-28 2020-04-02 Lam Research Corporation Systems and methods for optimizing power delivery to an electrode of a plasma chamber
JP7451540B2 (ja) * 2019-01-22 2024-03-18 アプライド マテリアルズ インコーポレイテッド パルス状電圧波形を制御するためのフィードバックループ
CN114041201B (zh) * 2019-04-29 2024-12-06 朗姆研究公司 用于rf等离子体工具中的多级脉冲的系统和方法
US11158488B2 (en) * 2019-06-26 2021-10-26 Mks Instruments, Inc. High speed synchronization of plasma source/bias power delivery
WO2021118862A2 (en) * 2019-12-13 2021-06-17 Lam Research Corporation Multi-state pulsing for achieving a balance between bow control and mask selectivity
JP2023519960A (ja) * 2020-04-06 2023-05-15 ラム リサーチ コーポレーション プラズマシース安定化のための無線周波数パルス開始電力スパイクを制御するための方法およびシステム
US11545364B2 (en) 2020-08-24 2023-01-03 Tokyo Electron Limited Pulsed capacitively coupled plasma processes
WO2022103765A1 (en) * 2020-11-13 2022-05-19 Lam Research Corporation Systems and methods for radiofrequency signal generator-based control of impedance matching system
US11658006B2 (en) * 2021-01-14 2023-05-23 Applied Materials, Inc. Plasma sources and plasma processing apparatus thereof
US20230215694A1 (en) * 2021-02-05 2023-07-06 Lam Research Corporation Duty cycle control to achieve uniformity
WO2023136913A1 (en) * 2022-01-14 2023-07-20 Lam Research Corporation Method to control etch profile by rf pulsing
CN118715590A (zh) * 2022-02-17 2024-09-27 朗姆研究公司 用于减少衬底特征中的变化性的系统和方法
JP2025508379A (ja) * 2022-02-18 2025-03-26 ラム リサーチ コーポレーション 中心周波数同調のためのシステムおよび方法
US11996274B2 (en) * 2022-04-07 2024-05-28 Mks Instruments, Inc. Real-time, non-invasive IEDF plasma sensor
WO2024107552A1 (en) * 2022-11-16 2024-05-23 Lam Research Corporation Systems and methods for driving passivation to increase an etch rate
WO2026035547A1 (en) * 2024-08-05 2026-02-12 Lam Research Corporation High aspect ratio feature etching by multi-state pulsing

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201101389A (en) * 2009-04-24 2011-01-01 Lam Res Corp Method and apparatus for high aspect ratio dielectric etch
US9583357B1 (en) * 2015-08-05 2017-02-28 Lam Research Corporation Systems and methods for reverse pulsing
US9614524B1 (en) * 2015-11-28 2017-04-04 Applied Materials, Inc. Automatic impedance tuning with RF dual level pulsing
US9620337B2 (en) * 2013-01-31 2017-04-11 Lam Research Corporation Determining a malfunctioning device in a plasma system
TW201724254A (zh) * 2015-09-01 2017-07-01 蘭姆研究公司 用於高深寬比介電蝕刻之遮罩收縮層
TW201730962A (zh) * 2015-10-09 2017-09-01 應用材料股份有限公司 超高模量與蝕刻選擇性的硼-碳硬遮罩膜

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7247218B2 (en) * 2003-05-16 2007-07-24 Applied Materials, Inc. Plasma density, energy and etch rate measurements at bias power input and real time feedback control of plasma source and bias power
US7144521B2 (en) 2003-08-22 2006-12-05 Lam Research Corporation High aspect ratio etch using modulation of RF powers of various frequencies
US7547636B2 (en) 2007-02-05 2009-06-16 Lam Research Corporation Pulsed ultra-high aspect ratio dielectric etch
JP5141519B2 (ja) 2008-12-02 2013-02-13 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理装置の運転方法
US8383001B2 (en) 2009-02-20 2013-02-26 Tokyo Electron Limited Plasma etching method, plasma etching apparatus and storage medium
US8382999B2 (en) * 2009-03-26 2013-02-26 Applied Materials, Inc. Pulsed plasma high aspect ratio dielectric process
US8404598B2 (en) 2009-08-07 2013-03-26 Applied Materials, Inc. Synchronized radio frequency pulsing for plasma etching
US10225919B2 (en) * 2011-06-30 2019-03-05 Aes Global Holdings, Pte. Ltd Projected plasma source
US9197196B2 (en) * 2012-02-22 2015-11-24 Lam Research Corporation State-based adjustment of power and frequency
US10157729B2 (en) * 2012-02-22 2018-12-18 Lam Research Corporation Soft pulsing
US9295148B2 (en) * 2012-12-14 2016-03-22 Lam Research Corporation Computation of statistics for statistical data decimation
TWI599272B (zh) * 2012-09-14 2017-09-11 蘭姆研究公司 根據三個或更多狀態之功率及頻率調整
JP6081254B2 (ja) * 2013-03-26 2017-02-15 株式会社東芝 永久磁石とそれを用いたモータおよび発電機
KR101677748B1 (ko) 2014-10-29 2016-11-29 삼성전자 주식회사 펄스 플라즈마 장치 및 펄스 플라즈마 장치 구동 방법
US9536749B2 (en) * 2014-12-15 2017-01-03 Lam Research Corporation Ion energy control by RF pulse shape
US10340879B2 (en) * 2015-02-18 2019-07-02 Reno Technologies, Inc. Switching circuit
US10332725B2 (en) * 2015-03-30 2019-06-25 Lam Research Corporation Systems and methods for reversing RF current polarity at one output of a multiple output RF matching network
US9947514B2 (en) * 2015-09-01 2018-04-17 Mks Instruments, Inc. Plasma RF bias cancellation system
US10347464B2 (en) * 2015-09-15 2019-07-09 Lam Research Corporation Cycle-averaged frequency tuning for low power voltage mode operation
US9788405B2 (en) * 2015-10-03 2017-10-10 Applied Materials, Inc. RF power delivery with approximated saw tooth wave pulsing
US9852889B1 (en) * 2016-06-22 2017-12-26 Lam Research Corporation Systems and methods for controlling directionality of ions in an edge region by using an electrode within a coupling ring
US9872373B1 (en) * 2016-10-25 2018-01-16 Applied Materials, Inc. Smart multi-level RF pulsing methods
US10002746B1 (en) * 2017-09-13 2018-06-19 Lam Research Corporation Multi regime plasma wafer processing to increase directionality of ions
US10264663B1 (en) * 2017-10-18 2019-04-16 Lam Research Corporation Matchless plasma source for semiconductor wafer fabrication
US10304669B1 (en) * 2018-01-21 2019-05-28 Mks Instruments, Inc. Adaptive counter measure control thwarting IMD jamming impairments for RF plasma systems
US10269540B1 (en) * 2018-01-25 2019-04-23 Advanced Energy Industries, Inc. Impedance matching system and method of operating the same
US10304660B1 (en) * 2018-03-21 2019-05-28 Lam Research Corporation Multi-level pulsing of DC and RF signals
US10224183B1 (en) * 2018-03-21 2019-03-05 Lam Research Corporation Multi-level parameter and frequency pulsing with a low angular spread
US10504744B1 (en) * 2018-07-19 2019-12-10 Lam Research Corporation Three or more states for achieving high aspect ratio dielectric etch

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201101389A (en) * 2009-04-24 2011-01-01 Lam Res Corp Method and apparatus for high aspect ratio dielectric etch
US9620337B2 (en) * 2013-01-31 2017-04-11 Lam Research Corporation Determining a malfunctioning device in a plasma system
US9583357B1 (en) * 2015-08-05 2017-02-28 Lam Research Corporation Systems and methods for reverse pulsing
TW201724254A (zh) * 2015-09-01 2017-07-01 蘭姆研究公司 用於高深寬比介電蝕刻之遮罩收縮層
TW201730962A (zh) * 2015-10-09 2017-09-01 應用材料股份有限公司 超高模量與蝕刻選擇性的硼-碳硬遮罩膜
US9614524B1 (en) * 2015-11-28 2017-04-04 Applied Materials, Inc. Automatic impedance tuning with RF dual level pulsing

Also Published As

Publication number Publication date
TW202445644A (zh) 2024-11-16
US10861708B2 (en) 2020-12-08
JP2024069652A (ja) 2024-05-21
TW202032616A (zh) 2020-09-01
KR20210024198A (ko) 2021-03-04
US20200090948A1 (en) 2020-03-19
WO2020018701A1 (en) 2020-01-23
JP2021532574A (ja) 2021-11-25
KR20250173581A (ko) 2025-12-10
JP7791924B2 (ja) 2025-12-24
JP7461333B2 (ja) 2024-04-03
US10504744B1 (en) 2019-12-10
KR102891958B1 (ko) 2025-11-26

Similar Documents

Publication Publication Date Title
TWI846712B (zh) 用於達成高深寬比介電質蝕刻的三個以上狀態
TWI840373B (zh) 徑向蝕刻均勻度的主動控制之方法及系統
US10755895B2 (en) Ion energy control by RF pulse shape
TWI716428B (zh) 用於反向脈衝的系統及方法
US9997333B2 (en) Sub-pulsing during a state
US20230005718A1 (en) Multi-level parameter and frequency pulsing with a low angular spread
JP7662638B2 (ja) 反り制御とマスク選択比とのバランスを達成するための多状態パルス化
JP2021530866A (ja) 制御されたエッチングのための単一エネルギイオン生成
US10304662B2 (en) Multi regime plasma wafer processing to increase directionality of ions
US20250095964A1 (en) Method to control etch profile by rf pulsing
TWI921805B (zh) 進行蝕刻操作的方法、控制器、及電漿系統
JP2025512791A (ja) パワーリミッタを制御するシステムおよび方法
JP2025509162A (ja) 状態遷移の後の反射電力を低減するためのシステムおよび方法
US20230230807A1 (en) Control of mask cd
TW202431905A (zh) 驅動鈍化以增加蝕刻速率的系統及方法
KR20240090369A (ko) 전극들에 제공된 rf 신호들 사이의 위상차를 결정하기 위한 시스템들 및 방법들