JP7461333B2 - 高アスペクト比の誘電体エッチングを達成するための３つ以上の状態 - Google Patents

高アスペクト比の誘電体エッチングを達成するための３つ以上の状態 Download PDF

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JP7461333B2
JP7461333B2 JP2021500910A JP2021500910A JP7461333B2 JP 7461333 B2 JP7461333 B2 JP 7461333B2 JP 2021500910 A JP2021500910 A JP 2021500910A JP 2021500910 A JP2021500910 A JP 2021500910A JP 7461333 B2 JP7461333 B2 JP 7461333B2
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JP2021532574A (ja
JPWO2020018701A5 (https=
JP2021532574A5 (https=
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ヤナガワ・タクミ
ドール・ニキル
ボウミック・ラナディープ
ハドソン・エリック
コザケビッチ・フェリックス・レイ
ホランド・ジョン
マラクタノフ・アレクセイ
リンデーカー・ブラッドフォード・ジェイ．
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP2021500910A 2018-07-19 2019-07-17 高アスペクト比の誘電体エッチングを達成するための３つ以上の状態 Active JP7461333B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024046425A JP7791924B2 (ja) 2018-07-19 2024-03-22 高アスペクト比の誘電体エッチングを達成するための３つ以上の状態

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/040,502 2018-07-19
US16/040,502 US10504744B1 (en) 2018-07-19 2018-07-19 Three or more states for achieving high aspect ratio dielectric etch
PCT/US2019/042255 WO2020018701A1 (en) 2018-07-19 2019-07-17 Three or more states for achieving high aspect ratio dielectric etch

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JP2024046425A Division JP7791924B2 (ja) 2018-07-19 2024-03-22 高アスペクト比の誘電体エッチングを達成するための３つ以上の状態

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JP2021532574A JP2021532574A (ja) 2021-11-25
JPWO2020018701A5 JPWO2020018701A5 (https=) 2022-07-27
JP2021532574A5 JP2021532574A5 (https=) 2022-07-27
JP7461333B2 true JP7461333B2 (ja) 2024-04-03

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JP2024046425A Active JP7791924B2 (ja) 2018-07-19 2024-03-22 高アスペクト比の誘電体エッチングを達成するための３つ以上の状態

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US (2) US10504744B1 (https=)
JP (2) JP7461333B2 (https=)
KR (2) KR102891958B1 (https=)
TW (1) TWI846712B (https=)
WO (1) WO2020018701A1 (https=)

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US11615943B2 (en) * 2017-07-07 2023-03-28 Advanced Energy Industries, Inc. Inter-period control for passive power distribution of multiple electrode inductive plasma source
US11651939B2 (en) * 2017-07-07 2023-05-16 Advanced Energy Industries, Inc. Inter-period control system for plasma power delivery system and method of operating same
US10504744B1 (en) * 2018-07-19 2019-12-10 Lam Research Corporation Three or more states for achieving high aspect ratio dielectric etch
WO2020068107A1 (en) * 2018-09-28 2020-04-02 Lam Research Corporation Systems and methods for optimizing power delivery to an electrode of a plasma chamber
JP7451540B2 (ja) * 2019-01-22 2024-03-18 アプライド マテリアルズ インコーポレイテッド パルス状電圧波形を制御するためのフィードバックループ
CN114041201B (zh) * 2019-04-29 2024-12-06 朗姆研究公司 用于rf等离子体工具中的多级脉冲的系统和方法
US11158488B2 (en) * 2019-06-26 2021-10-26 Mks Instruments, Inc. High speed synchronization of plasma source/bias power delivery
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WO2022103765A1 (en) * 2020-11-13 2022-05-19 Lam Research Corporation Systems and methods for radiofrequency signal generator-based control of impedance matching system
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CN118715590A (zh) * 2022-02-17 2024-09-27 朗姆研究公司 用于减少衬底特征中的变化性的系统和方法
JP2025508379A (ja) * 2022-02-18 2025-03-26 ラム リサーチ コーポレーション 中心周波数同調のためのシステムおよび方法
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TW202445644A (zh) 2024-11-16
US10861708B2 (en) 2020-12-08
JP2024069652A (ja) 2024-05-21
TW202032616A (zh) 2020-09-01
KR20210024198A (ko) 2021-03-04
US20200090948A1 (en) 2020-03-19
WO2020018701A1 (en) 2020-01-23
JP2021532574A (ja) 2021-11-25
KR20250173581A (ko) 2025-12-10
JP7791924B2 (ja) 2025-12-24
TWI846712B (zh) 2024-07-01
US10504744B1 (en) 2019-12-10
KR102891958B1 (ko) 2025-11-26

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