KR102891958B1 - 고 종횡비 유전체 에칭을 달성하기 위한 3 개 이상의 상태들 - Google Patents

고 종횡비 유전체 에칭을 달성하기 위한 3 개 이상의 상태들

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Publication number
KR102891958B1
KR102891958B1 KR1020217004926A KR20217004926A KR102891958B1 KR 102891958 B1 KR102891958 B1 KR 102891958B1 KR 1020217004926 A KR1020217004926 A KR 1020217004926A KR 20217004926 A KR20217004926 A KR 20217004926A KR 102891958 B1 KR102891958 B1 KR 102891958B1
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state
parameter
signal
during
parameter level
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KR20210024198A (ko
Inventor
타쿠미 야나카와
니힐 돌
라나딥 보믹
에릭 허드슨
펠릭스 레이브 코자케비치
존 홀란드
알렉세이 마라크타노브
브래드포드 제이. 린다커
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램 리써치 코포레이션
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01L21/3065—
    • H01L21/31116—
    • H01L21/32136—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
KR1020217004926A 2018-07-19 2019-07-17 고 종횡비 유전체 에칭을 달성하기 위한 3 개 이상의 상태들 Active KR102891958B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020257039300A KR20250173581A (ko) 2018-07-19 2019-07-17 고 종횡비 유전체 에칭을 달성하기 위한 3 개 이상의 상태들

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/040,502 2018-07-19
US16/040,502 US10504744B1 (en) 2018-07-19 2018-07-19 Three or more states for achieving high aspect ratio dielectric etch
PCT/US2019/042255 WO2020018701A1 (en) 2018-07-19 2019-07-17 Three or more states for achieving high aspect ratio dielectric etch

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020257039300A Division KR20250173581A (ko) 2018-07-19 2019-07-17 고 종횡비 유전체 에칭을 달성하기 위한 3 개 이상의 상태들

Publications (2)

Publication Number Publication Date
KR20210024198A KR20210024198A (ko) 2021-03-04
KR102891958B1 true KR102891958B1 (ko) 2025-11-26

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ID=68766060

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020217004926A Active KR102891958B1 (ko) 2018-07-19 2019-07-17 고 종횡비 유전체 에칭을 달성하기 위한 3 개 이상의 상태들
KR1020257039300A Pending KR20250173581A (ko) 2018-07-19 2019-07-17 고 종횡비 유전체 에칭을 달성하기 위한 3 개 이상의 상태들

Family Applications After (1)

Application Number Title Priority Date Filing Date
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Country Status (5)

Country Link
US (2) US10504744B1 (https=)
JP (2) JP7461333B2 (https=)
KR (2) KR102891958B1 (https=)
TW (1) TWI846712B (https=)
WO (1) WO2020018701A1 (https=)

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US11651939B2 (en) * 2017-07-07 2023-05-16 Advanced Energy Industries, Inc. Inter-period control system for plasma power delivery system and method of operating same
US10504744B1 (en) * 2018-07-19 2019-12-10 Lam Research Corporation Three or more states for achieving high aspect ratio dielectric etch
WO2020068107A1 (en) * 2018-09-28 2020-04-02 Lam Research Corporation Systems and methods for optimizing power delivery to an electrode of a plasma chamber
JP7451540B2 (ja) * 2019-01-22 2024-03-18 アプライド マテリアルズ インコーポレイテッド パルス状電圧波形を制御するためのフィードバックループ
CN114041201B (zh) * 2019-04-29 2024-12-06 朗姆研究公司 用于rf等离子体工具中的多级脉冲的系统和方法
US11158488B2 (en) * 2019-06-26 2021-10-26 Mks Instruments, Inc. High speed synchronization of plasma source/bias power delivery
WO2021118862A2 (en) * 2019-12-13 2021-06-17 Lam Research Corporation Multi-state pulsing for achieving a balance between bow control and mask selectivity
JP2023519960A (ja) * 2020-04-06 2023-05-15 ラム リサーチ コーポレーション プラズマシース安定化のための無線周波数パルス開始電力スパイクを制御するための方法およびシステム
US11545364B2 (en) 2020-08-24 2023-01-03 Tokyo Electron Limited Pulsed capacitively coupled plasma processes
WO2022103765A1 (en) * 2020-11-13 2022-05-19 Lam Research Corporation Systems and methods for radiofrequency signal generator-based control of impedance matching system
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CN118715590A (zh) * 2022-02-17 2024-09-27 朗姆研究公司 用于减少衬底特征中的变化性的系统和方法
JP2025508379A (ja) * 2022-02-18 2025-03-26 ラム リサーチ コーポレーション 中心周波数同調のためのシステムおよび方法
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WO2024107552A1 (en) * 2022-11-16 2024-05-23 Lam Research Corporation Systems and methods for driving passivation to increase an etch rate
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Also Published As

Publication number Publication date
TW202445644A (zh) 2024-11-16
US10861708B2 (en) 2020-12-08
JP2024069652A (ja) 2024-05-21
TW202032616A (zh) 2020-09-01
KR20210024198A (ko) 2021-03-04
US20200090948A1 (en) 2020-03-19
WO2020018701A1 (en) 2020-01-23
JP2021532574A (ja) 2021-11-25
KR20250173581A (ko) 2025-12-10
JP7791924B2 (ja) 2025-12-24
JP7461333B2 (ja) 2024-04-03
TWI846712B (zh) 2024-07-01
US10504744B1 (en) 2019-12-10

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