JP2021530866A5 - - Google Patents
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- Publication number
- JP2021530866A5 JP2021530866A5 JP2021500287A JP2021500287A JP2021530866A5 JP 2021530866 A5 JP2021530866 A5 JP 2021530866A5 JP 2021500287 A JP2021500287 A JP 2021500287A JP 2021500287 A JP2021500287 A JP 2021500287A JP 2021530866 A5 JP2021530866 A5 JP 2021530866A5
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- energy band
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/035,423 US11011351B2 (en) | 2018-07-13 | 2018-07-13 | Monoenergetic ion generation for controlled etch |
| US16/035,423 | 2018-07-13 | ||
| PCT/US2019/041399 WO2020014480A1 (en) | 2018-07-13 | 2019-07-11 | Monoenergetic ion generation for controlled etch |
Publications (4)
| Publication Number | Publication Date |
|---|---|
| JP2021530866A JP2021530866A (ja) | 2021-11-11 |
| JP2021530866A5 true JP2021530866A5 (https=) | 2022-07-20 |
| JPWO2020014480A5 JPWO2020014480A5 (https=) | 2022-07-20 |
| JP7441819B2 JP7441819B2 (ja) | 2024-03-01 |
Family
ID=69138252
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021500287A Active JP7441819B2 (ja) | 2018-07-13 | 2019-07-11 | 制御されたエッチングのための単一エネルギイオン生成 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US11011351B2 (https=) |
| JP (1) | JP7441819B2 (https=) |
| KR (1) | KR20210021400A (https=) |
| TW (1) | TWI835819B (https=) |
| WO (1) | WO2020014480A1 (https=) |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108369922B (zh) | 2016-01-26 | 2023-03-21 | 应用材料公司 | 晶片边缘环升降解决方案 |
| JP6888007B2 (ja) | 2016-01-26 | 2021-06-16 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | ウェハエッジリングの持ち上げに関する解決 |
| US10312048B2 (en) | 2016-12-12 | 2019-06-04 | Applied Materials, Inc. | Creating ion energy distribution functions (IEDF) |
| US10510575B2 (en) | 2017-09-20 | 2019-12-17 | Applied Materials, Inc. | Substrate support with multiple embedded electrodes |
| US11075105B2 (en) | 2017-09-21 | 2021-07-27 | Applied Materials, Inc. | In-situ apparatus for semiconductor process module |
| US10555412B2 (en) | 2018-05-10 | 2020-02-04 | Applied Materials, Inc. | Method of controlling ion energy distribution using a pulse generator with a current-return output stage |
| US11201037B2 (en) | 2018-05-28 | 2021-12-14 | Applied Materials, Inc. | Process kit with adjustable tuning ring for edge uniformity control |
| US11935773B2 (en) | 2018-06-14 | 2024-03-19 | Applied Materials, Inc. | Calibration jig and calibration method |
| US11476145B2 (en) | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
| US11289310B2 (en) | 2018-11-21 | 2022-03-29 | Applied Materials, Inc. | Circuits for edge ring control in shaped DC pulsed plasma process device |
| JP7451540B2 (ja) | 2019-01-22 | 2024-03-18 | アプライド マテリアルズ インコーポレイテッド | パルス状電圧波形を制御するためのフィードバックループ |
| US11508554B2 (en) | 2019-01-24 | 2022-11-22 | Applied Materials, Inc. | High voltage filter assembly |
| US12009236B2 (en) | 2019-04-22 | 2024-06-11 | Applied Materials, Inc. | Sensors and system for in-situ edge ring erosion monitor |
| WO2021173334A1 (en) * | 2020-02-27 | 2021-09-02 | Lam Research Corporation | Systems and methods for using binning to increase power during a low frequency cycle |
| US11462389B2 (en) | 2020-07-31 | 2022-10-04 | Applied Materials, Inc. | Pulsed-voltage hardware assembly for use in a plasma processing system |
| US11798790B2 (en) | 2020-11-16 | 2023-10-24 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| US11901157B2 (en) | 2020-11-16 | 2024-02-13 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| US11495470B1 (en) | 2021-04-16 | 2022-11-08 | Applied Materials, Inc. | Method of enhancing etching selectivity using a pulsed plasma |
| US11948780B2 (en) | 2021-05-12 | 2024-04-02 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11791138B2 (en) | 2021-05-12 | 2023-10-17 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11967483B2 (en) | 2021-06-02 | 2024-04-23 | Applied Materials, Inc. | Plasma excitation with ion energy control |
| US12525441B2 (en) | 2021-06-09 | 2026-01-13 | Applied Materials, Inc. | Plasma chamber and chamber component cleaning methods |
| US12148595B2 (en) | 2021-06-09 | 2024-11-19 | Applied Materials, Inc. | Plasma uniformity control in pulsed DC plasma chamber |
| US12525433B2 (en) | 2021-06-09 | 2026-01-13 | Applied Materials, Inc. | Method and apparatus to reduce feature charging in plasma processing chamber |
| US11810760B2 (en) | 2021-06-16 | 2023-11-07 | Applied Materials, Inc. | Apparatus and method of ion current compensation |
| US11569066B2 (en) | 2021-06-23 | 2023-01-31 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US11476090B1 (en) | 2021-08-24 | 2022-10-18 | Applied Materials, Inc. | Voltage pulse time-domain multiplexing |
| US12106938B2 (en) | 2021-09-14 | 2024-10-01 | Applied Materials, Inc. | Distortion current mitigation in a radio frequency plasma processing chamber |
| US12400845B2 (en) * | 2021-11-29 | 2025-08-26 | Applied Materials, Inc. | Ion energy control on electrodes in a plasma reactor |
| US11694876B2 (en) | 2021-12-08 | 2023-07-04 | Applied Materials, Inc. | Apparatus and method for delivering a plurality of waveform signals during plasma processing |
| US11972924B2 (en) | 2022-06-08 | 2024-04-30 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US12315732B2 (en) | 2022-06-10 | 2025-05-27 | Applied Materials, Inc. | Method and apparatus for etching a semiconductor substrate in a plasma etch chamber |
| US12586768B2 (en) | 2022-08-10 | 2026-03-24 | Applied Materials, Inc. | Pulsed voltage compensation for plasma processing applications |
| US12272524B2 (en) | 2022-09-19 | 2025-04-08 | Applied Materials, Inc. | Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics |
| US12111341B2 (en) | 2022-10-05 | 2024-10-08 | Applied Materials, Inc. | In-situ electric field detection method and apparatus |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2706995B2 (ja) * | 1989-04-28 | 1998-01-28 | キヤノン株式会社 | マイクロ波プラズマｃｖｄ法による多結晶半導体膜の形成方法 |
| JPH05234959A (ja) | 1991-08-16 | 1993-09-10 | Hitachi Ltd | ドライエッチング方法及びドライエッチング装置 |
| JP2957403B2 (ja) * | 1993-01-18 | 1999-10-04 | 日本電気株式会社 | プラズマエッチング方法とその装置 |
| JP2000150196A (ja) * | 1999-01-01 | 2000-05-30 | Hitachi Ltd | プラズマ処理方法およびその装置 |
| CN1258811C (zh) | 2001-02-14 | 2006-06-07 | 先进微装置公司 | 控制蚀刻选择性的方法和装置 |
| AU2002366943A1 (en) * | 2001-12-20 | 2003-07-09 | Tokyo Electron Limited | Method and apparatus comprising a magnetic filter for plasma processing a workpiece |
| US7459100B2 (en) | 2004-12-22 | 2008-12-02 | Lam Research Corporation | Methods and apparatus for sequentially alternating among plasma processes in order to optimize a substrate |
| JP5014166B2 (ja) * | 2007-02-13 | 2012-08-29 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法およびプラズマ処理装置 |
| US8703003B2 (en) | 2009-04-20 | 2014-04-22 | Spts Technologies Limited | Selective etching of semiconductor substrate(s) that preserves underlying dielectric layers |
| US20130119018A1 (en) * | 2011-11-15 | 2013-05-16 | Keren Jacobs Kanarik | Hybrid pulsing plasma processing systems |
| US9390893B2 (en) | 2012-02-22 | 2016-07-12 | Lam Research Corporation | Sub-pulsing during a state |
| US9171699B2 (en) | 2012-02-22 | 2015-10-27 | Lam Research Corporation | Impedance-based adjustment of power and frequency |
| US9368329B2 (en) | 2012-02-22 | 2016-06-14 | Lam Research Corporation | Methods and apparatus for synchronizing RF pulses in a plasma processing system |
| US9197196B2 (en) | 2012-02-22 | 2015-11-24 | Lam Research Corporation | State-based adjustment of power and frequency |
| US10157729B2 (en) | 2012-02-22 | 2018-12-18 | Lam Research Corporation | Soft pulsing |
| US9462672B2 (en) | 2012-02-22 | 2016-10-04 | Lam Research Corporation | Adjustment of power and frequency based on three or more states |
| US9460894B2 (en) | 2013-06-28 | 2016-10-04 | Lam Research Corporation | Controlling ion energy within a plasma chamber |
| US9536749B2 (en) | 2014-12-15 | 2017-01-03 | Lam Research Corporation | Ion energy control by RF pulse shape |
| US10008384B2 (en) | 2015-06-25 | 2018-06-26 | Varian Semiconductor Equipment Associates, Inc. | Techniques to engineer nanoscale patterned features using ions |
| US9761459B2 (en) * | 2015-08-05 | 2017-09-12 | Lam Research Corporation | Systems and methods for reverse pulsing |
| US9659788B2 (en) * | 2015-08-31 | 2017-05-23 | American Air Liquide, Inc. | Nitrogen-containing compounds for etching semiconductor structures |
| US9761414B2 (en) | 2015-10-08 | 2017-09-12 | Lam Research Corporation | Uniformity control circuit for use within an impedance matching circuit |
| US10510512B2 (en) * | 2018-01-25 | 2019-12-17 | Tokyo Electron Limited | Methods and systems for controlling plasma performance |
-
2018
- 2018-07-13 US US16/035,423 patent/US11011351B2/en active Active
-
2019
- 2019-07-11 JP JP2021500287A patent/JP7441819B2/ja active Active
- 2019-07-11 KR KR1020217004299A patent/KR20210021400A/ko active Pending
- 2019-07-11 WO PCT/US2019/041399 patent/WO2020014480A1/en not_active Ceased
- 2019-07-12 TW TW108124589A patent/TWI835819B/zh active
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