JP2021510011A5 - - Google Patents

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Publication number
JP2021510011A5
JP2021510011A5 JP2020547214A JP2020547214A JP2021510011A5 JP 2021510011 A5 JP2021510011 A5 JP 2021510011A5 JP 2020547214 A JP2020547214 A JP 2020547214A JP 2020547214 A JP2020547214 A JP 2020547214A JP 2021510011 A5 JP2021510011 A5 JP 2021510011A5
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JP
Japan
Prior art keywords
absorber layer
thickener
film
less
millipascals
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JP2020547214A
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English (en)
Japanese (ja)
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JP2021510011A (ja
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Priority claimed from PCT/US2019/021759 external-priority patent/WO2019178029A1/en
Publication of JP2021510011A publication Critical patent/JP2021510011A/ja
Publication of JP2021510011A5 publication Critical patent/JP2021510011A5/ja
Priority to JP2022159353A priority Critical patent/JP7642594B2/ja
Withdrawn legal-status Critical Current

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JP2020547214A 2018-03-13 2019-03-12 アニーリング材料およびアニーリング材料を用いて光起電力素子をアニールするための方法 Withdrawn JP2021510011A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2022159353A JP7642594B2 (ja) 2018-03-13 2022-10-03 アニーリング材料およびアニーリング材料を用いて光起電力素子をアニールするための方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862642192P 2018-03-13 2018-03-13
US62/642,192 2018-03-13
PCT/US2019/021759 WO2019178029A1 (en) 2018-03-13 2019-03-12 Annealing materials and methods for annealing photovoltaic devices with annealing materials

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JP2022159353A Division JP7642594B2 (ja) 2018-03-13 2022-10-03 アニーリング材料およびアニーリング材料を用いて光起電力素子をアニールするための方法

Publications (2)

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JP2021510011A JP2021510011A (ja) 2021-04-08
JP2021510011A5 true JP2021510011A5 (cg-RX-API-DMAC7.html) 2021-10-28

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JP2020547214A Withdrawn JP2021510011A (ja) 2018-03-13 2019-03-12 アニーリング材料およびアニーリング材料を用いて光起電力素子をアニールするための方法
JP2022159353A Active JP7642594B2 (ja) 2018-03-13 2022-10-03 アニーリング材料およびアニーリング材料を用いて光起電力素子をアニールするための方法

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Country Status (6)

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US (1) US11929447B2 (cg-RX-API-DMAC7.html)
EP (1) EP3750193B1 (cg-RX-API-DMAC7.html)
JP (2) JP2021510011A (cg-RX-API-DMAC7.html)
CN (1) CN112106208B (cg-RX-API-DMAC7.html)
MY (1) MY205480A (cg-RX-API-DMAC7.html)
WO (1) WO2019178029A1 (cg-RX-API-DMAC7.html)

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CN113261116B (zh) 2018-10-24 2024-10-11 第一阳光公司 具有v族掺杂的光伏器件用缓冲层
US11257977B2 (en) * 2020-03-03 2022-02-22 The Board Of Trustees Of The University Of Alabama Diffusion based ex-situ group V (P, As, Sb, Bi) doping in polycrystalline CdTe thin film solar cells
CN115161773B (zh) * 2022-07-15 2024-07-02 中南大学 一种大尺寸CdZnTe单晶的无损伤缺陷控制技术

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