JP2021187703A - 静電チャック用誘電体 - Google Patents
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Abstract
Description
1.
主結晶相がコランダムからなり、その他の結晶相としてAl5BO9を含み、粉末X線回折によるAl5BO9の(021面)ピーク強度:IAとコランダムの(012面)ピーク強度:IBとの比:IA/IBが、0.04以上0.4以下である、静電チャック用誘電体。
2.
ビッカース硬度が16GPa以上である、前記1に記載の静電チャック用誘電体。
3.
チタニアを0.8質量%以上3質量%以下、炭化ホウ素を0.2質量%以上1質量%以下含有し、残部が主としてアルミナ原料からなる配合物を混合、成形、焼成して得られる、前記1又は2に記載の静電チャック用誘電体。
IA/IBが0.04未満であると、十分な硬度を確保することができない。
一方、IA/IBが0.4超であると、粒界にAl5BO9が多量に生成されるため体積固有抵抗率が上昇し、吸着力が低下する。すなわち、ジョンセン・ラーベック型の静電チャック用誘電体では、粒界に低抵抗な粒界相を形成することにより適度な導電性を確保し、体積固有抵抗率を低下させるが、粒界にAl5BO9が多量に生成されると、Al5BO9が低抵抗な粒界相の導電性を阻害し、結果として体積固有抵抗率が上昇する。
配合物中のチタニアの含有率が0.8質量%未満であると、Ti3+の生成量が少なくなって体積固有抵抗率が上昇し、吸着力が低下する懸念がある。すなわち、チタニア(TiO2)は、アルミナ(Al2O3)原料粒子の粒界相に固溶し体積固有抵抗率を低下させる。具体的には、焼成中にTiO2のTi4+の一部がTi3+に還元され、このTi3+がAl2O3のAl3+のサイトに置換固溶することで低抵抗な粒界相((Al、Ti)2O3)を形成する。このため、配合物中のチタニアの含有率が0.8質量%未満であると、Ti3+の生成量が少なくなって体積固有抵抗率が上昇し、吸着力が低下する懸念がある。
一方、配合物中のチタニアの含有率が3質量%超となると、体積固有抵抗率が低くなりすぎてリーク電流が大きくなり、ウェーハの回路等に悪影響を及ぼす懸念がある。
一方、配合物中の炭化ホウ素の含有率が1量%超となると、粒界にAl5BO9が多量に生成されるため体積固有抵抗率が上昇し、吸着力が低下する懸念がある。
配合物中の炭化ホウ素の含有率は、より十分な硬度を確保する点から0.4質量%以上1質量%以下であることが好ましい。
焼成は通常の常圧焼結で行ってもよいが相対的に低密度になりやすいため、ホットプレス、HIP、ガス圧焼成などの加圧焼結を行うことが好ましい。焼成雰囲気はアルゴン等の不活性ガス雰囲気や水素等の還元ガス雰囲気(すなわち、非酸化性雰囲気)、あるいは真空中とすることができる。焼成温度は1200℃以上1700℃以下とすることができる。
なお、本発明の配合物においてチタニア及び炭化ホウ素以外の残部は主としてアルミナ原料からなるが、この残部にはアルミナ原料以外に焼結助剤として酸化マグネシウム(MgO)、シリカ(SiO2)、酸化ランタン(La2O3)、酸化イットリウム(Y2O3)、酸化カルシウム(CaO)、酸化セリウム(Ce2O3)等を含み得る。ただし、これらの含有率は合計で3質量%以下(0を含む。)とすることが好ましい。
得られた各例の静電チャック用誘電体について、Cu−Kα線による粉末X線回折によりAl5BO9の(021面)ピーク強度:IAとコランダムの(012面)ピーク強度:IBとの比:IA/IBを評価すると共に、ビッカース硬度、体積固有抵抗率及び吸着力を評価し、併せて色調判定を行った。
なお、表1では、○(良)のうち3.8×1010Ω・cm超1.3×1011Ω・cm以下を○(H)、3.8×109Ω・cm以上9.7×109Ω・cm未満を○(L)、また、×(不良)のうち1.3×1011Ω・cm超を×(H)、3.8×109Ω・cm未満を×(L)と表記した。
一方、比較例2はピーク強度比(IA/IB)が大きすぎる例で、体積固有抵抗率が1.3×1011Ω・cm超まで上昇し、吸着力が低下した。
2 絶縁体基板
3 導体層(電極)
4 エポキシ系接着剤
5 リード電極
6 シリコンウェ−ハ
7 電源
Claims (3)
- 主結晶相がコランダムからなり、その他の結晶相としてAl5BO9を含み、粉末X線回折によるAl5BO9の(021面)ピーク強度:IAとコランダムの(012面)ピーク強度:IBとの比:IA/IBが、0.04以上0.4以下である、静電チャック用誘電体。
- ビッカース硬度が16GPa以上である、請求項1に記載の静電チャック用誘電体。
- チタニアを0.8質量%以上3質量%以下、炭化ホウ素を0.2質量%以上1質量%以下含有し、残部が主としてアルミナ原料からなる配合物を混合、成形、焼成して得られる、請求項1又は2に記載の静電チャック用誘電体。
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JP2020093581A JP6738505B1 (ja) | 2020-05-28 | 2020-05-28 | 静電チャック用誘電体 |
US17/917,126 US20230150882A1 (en) | 2020-05-28 | 2021-05-20 | Dielectric for electrostatic chuck |
CN202180031673.1A CN115461854A (zh) | 2020-05-28 | 2021-05-20 | 静电卡盘用电介质 |
PCT/JP2021/019183 WO2021241394A1 (ja) | 2020-05-28 | 2021-05-20 | 静電チャック用誘電体 |
KR1020227024166A KR20220114057A (ko) | 2020-05-28 | 2021-05-20 | 정전 척용 유전체 |
TW110119161A TWI753835B (zh) | 2020-05-28 | 2021-05-27 | 靜電吸盤用介電質 |
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JP (1) | JP6738505B1 (ja) |
KR (1) | KR20220114057A (ja) |
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JP7194306B1 (ja) | 2022-07-27 | 2022-12-21 | 黒崎播磨株式会社 | アルミナ焼結体及び静電チャック |
CN115650700A (zh) * | 2022-10-26 | 2023-01-31 | 航天材料及工艺研究所 | 一种耐高温轻质透波多孔Al5BO9陶瓷材料及其制备方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004196590A (ja) * | 2002-12-18 | 2004-07-15 | Ngk Spark Plug Co Ltd | セラミックス焼結体 |
JP2004224662A (ja) * | 2003-01-24 | 2004-08-12 | National Institute Of Advanced Industrial & Technology | アルミナ−窒化ホウ素複合体の反応合成 |
WO2012056807A1 (ja) * | 2010-10-25 | 2012-05-03 | 日本碍子株式会社 | セラミックス材料、積層体、半導体製造装置用部材及びスパッタリングターゲット部材 |
JP2012140257A (ja) * | 2010-12-28 | 2012-07-26 | Taiheiyo Cement Corp | 緻密質−多孔質接合体 |
WO2014175349A1 (ja) * | 2013-04-26 | 2014-10-30 | 三井金属鉱業株式会社 | 排気ガス浄化触媒用担体、排気ガス浄化用触媒及び排気ガス浄化用触媒構成体 |
JP2017178719A (ja) * | 2016-03-31 | 2017-10-05 | 三菱ケミカル株式会社 | 窒化アルミニウム−窒化ホウ素複合凝集粒子およびその製造方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
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TW544806B (en) * | 2001-05-30 | 2003-08-01 | Asahi Glass Co Ltd | Low dielectric constant insulating film, method of forming it, and electric circuit using it |
CN1473452A (zh) * | 2001-07-09 | 2004-02-04 | IBIDEN�ɷ�����˾ | 陶瓷加热器与陶瓷接合体 |
JP4354138B2 (ja) | 2001-10-11 | 2009-10-28 | 新日鉄マテリアルズ株式会社 | アルミナ質焼結体の製造方法 |
JP5128783B2 (ja) * | 2006-04-17 | 2013-01-23 | 株式会社ヨコオ | 高周波用誘電体材料 |
JP6052976B2 (ja) * | 2012-10-15 | 2016-12-27 | 日本タングステン株式会社 | 静電チャック誘電体層および静電チャック |
KR101833318B1 (ko) * | 2016-05-13 | 2018-03-02 | 주식회사 이에스티 | 정전척의 제조방법 |
-
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004196590A (ja) * | 2002-12-18 | 2004-07-15 | Ngk Spark Plug Co Ltd | セラミックス焼結体 |
JP2004224662A (ja) * | 2003-01-24 | 2004-08-12 | National Institute Of Advanced Industrial & Technology | アルミナ−窒化ホウ素複合体の反応合成 |
WO2012056807A1 (ja) * | 2010-10-25 | 2012-05-03 | 日本碍子株式会社 | セラミックス材料、積層体、半導体製造装置用部材及びスパッタリングターゲット部材 |
JP2012140257A (ja) * | 2010-12-28 | 2012-07-26 | Taiheiyo Cement Corp | 緻密質−多孔質接合体 |
WO2014175349A1 (ja) * | 2013-04-26 | 2014-10-30 | 三井金属鉱業株式会社 | 排気ガス浄化触媒用担体、排気ガス浄化用触媒及び排気ガス浄化用触媒構成体 |
JP2017178719A (ja) * | 2016-03-31 | 2017-10-05 | 三菱ケミカル株式会社 | 窒化アルミニウム−窒化ホウ素複合凝集粒子およびその製造方法 |
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US20230150882A1 (en) | 2023-05-18 |
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CN115461854A (zh) | 2022-12-09 |
KR20220114057A (ko) | 2022-08-17 |
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