JP2021180208A - 半導体パッケージ - Google Patents
半導体パッケージ Download PDFInfo
- Publication number
- JP2021180208A JP2021180208A JP2020083335A JP2020083335A JP2021180208A JP 2021180208 A JP2021180208 A JP 2021180208A JP 2020083335 A JP2020083335 A JP 2020083335A JP 2020083335 A JP2020083335 A JP 2020083335A JP 2021180208 A JP2021180208 A JP 2021180208A
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- package
- semiconductor
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- semiconductor element
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 98
- 238000009413 insulation Methods 0.000 claims abstract description 43
- 239000011347 resin Substances 0.000 claims abstract description 8
- 229920005989 resin Polymers 0.000 claims abstract description 8
- 238000007789 sealing Methods 0.000 claims description 2
- 230000006866 deterioration Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 7
- 125000006850 spacer group Chemical group 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Abstract
Description
図1は、実施の形態1に係る半導体パッケージの回路図である。この半導体パッケージはトランスファー型パワーモジュールである。P側半導体素子1a,1b,1c及びN側半導体素子1d,1e,1fはIGBTであり、3相インバータのスイッチング素子である。ダイオード2a〜2fは還流ダイオード(Freewheeling Diode)であり、各半導体素子1a〜1fにそれぞれ逆並列接続されている。
図6は、実施の形態2に係る半導体パッケージの回路図である。図7は、実施の形態2に係る半導体パッケージの内部を示す平面図である。実施の形態1と同様に、3つの高圧側絶縁ドライバ3a,3b,3cが1つの内蔵用パッケージ5に集約されている。ここで、用途によっては、半導体モジュールと客先のシステムとの間のノイズによる影響を取り除くため、低圧側ドライバにも信号絶縁を必要とする場合がある。そこで、本実施の形態では、3相のN側半導体素子1d,1e,1fをそれぞれ駆動する低圧側ドライバとして低圧側絶縁ドライバ3d,3e,3fを用いている。また、実施の形態1の高圧側絶縁ドライバ3a,3b,3cと同様に、3つの低圧側絶縁ドライバ3d,3e,3fを1つの内蔵用パッケージ15に集約している。これにより、半導体モジュールと客先のシステムとの間の信号絶縁を達成することができる。また、パワーモジュールとして完全に信号絶縁が可能となる。その他の構成及び効果は実施の形態1と同様である。
図8は、実施の形態3に係る半導体パッケージの回路図である。図9は、実施の形態3に係る半導体パッケージの内部を示す平面図である。P側/N側全6相である3つの高圧側絶縁ドライバ3a,3b,3cと3つの低圧側絶縁ドライバ3d,3e,3fが1つの内蔵用パッケージ16に集約されている。これにより、装置を小型化し、配線を減らすことができる。その他の構成及び効果は実施の形態2と同様である。
Claims (9)
- 半導体素子と、
リードフレームと、
前記半導体素子を駆動するマルチチップ構成の絶縁ドライバを含む内蔵用パッケージと、
前記内蔵用パッケージと前記半導体素子を接続するワイヤと、
前記半導体素子、前記リードフレーム、前記内蔵用パッケージ及び前記ワイヤを封止する樹脂とを備え、
前記内蔵用パッケージは前記リードフレームに直接接合されていることを特徴とする半導体パッケージ。 - 前記内蔵用パッケージは互いに対向する第1主面と第2主面を有し、
前記第1主面が前記リードフレームに接合され、
前記第2主面に前記絶縁ドライバに接続された電極パッドが設けられ、
前記電極パッドが前記ワイヤにより前記半導体素子に接続されていることを特徴とする請求項1に記載の半導体パッケージ。 - 前記ワイヤはALワイヤであることを特徴とする請求項1又は2に記載の半導体パッケージ。
- 前記半導体素子は3相のP側半導体素子を有し、
前記絶縁ドライバは、前記3相のP側半導体素子をそれぞれ駆動する3つの高圧側絶縁ドライバを有し、
前記3つの高圧側絶縁ドライバが1つの前記内蔵用パッケージに集約されていることを特徴とする請求項1〜3の何れか1項に記載の半導体パッケージ。 - 前記半導体素子は3相のP側半導体素子と3相のN側半導体素子を有し、
前記絶縁ドライバは、前記3相のP側半導体素子をそれぞれ駆動する3つの高圧側絶縁ドライバと、前記3相のN側半導体素子をそれぞれ駆動する3つの低圧側絶縁ドライバとを有し、
前記内蔵用パッケージは第1及び第2の内蔵用パッケージを有し、
前記3つの高圧側絶縁ドライバが1つの前記第1の内蔵用パッケージに集約され、
前記3つの低圧側絶縁ドライバが1つの前記第2の内蔵用パッケージに集約されていることを特徴とする請求項1〜3の何れか1項に記載の半導体パッケージ。 - 前記半導体素子は3相のP側半導体素子と3相のN側半導体素子を有し、
前記絶縁ドライバは、前記3相のP側半導体素子をそれぞれ駆動する3つの高圧側絶縁ドライバと、前記3相のN側半導体素子をそれぞれ駆動する3つの低圧側絶縁ドライバとを有し、
前記3つの高圧側絶縁ドライバと前記3つの低圧側絶縁ドライバが1つの前記内蔵用パッケージに集約されていることを特徴とする請求項1〜3の何れか1項に記載の半導体パッケージ。 - 前記半導体素子はワイドバンドギャップ半導体によって形成されていることを特徴とする請求項1〜6の何れか1項に記載の半導体パッケージ。
- 前記半導体素子はSiC素子であることを特徴とする請求項7に記載の半導体パッケージ。
- 前記半導体素子はGaN素子であることを特徴とする請求項7に記載の半導体パッケージ。
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