JP2021153170A5 - - Google Patents
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- Publication number
- JP2021153170A5 JP2021153170A5 JP2020169758A JP2020169758A JP2021153170A5 JP 2021153170 A5 JP2021153170 A5 JP 2021153170A5 JP 2020169758 A JP2020169758 A JP 2020169758A JP 2020169758 A JP2020169758 A JP 2020169758A JP 2021153170 A5 JP2021153170 A5 JP 2021153170A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- film
- etching method
- etching
- films
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000005530 etching Methods 0.000 claims 34
- 238000000034 method Methods 0.000 claims 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 24
- 229910052710 silicon Inorganic materials 0.000 claims 24
- 239000010703 silicon Substances 0.000 claims 24
- 239000007789 gas Substances 0.000 claims 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 12
- 229910052814 silicon oxide Inorganic materials 0.000 claims 12
- 229910052698 phosphorus Inorganic materials 0.000 claims 9
- 239000011574 phosphorus Substances 0.000 claims 9
- 239000000758 substrate Substances 0.000 claims 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 7
- -1 The etching method Chemical compound 0.000 claims 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 3
- 229910052736 halogen Inorganic materials 0.000 claims 3
- 150000002367 halogens Chemical class 0.000 claims 3
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 3
- 230000001681 protective effect Effects 0.000 claims 3
- 239000002356 single layer Substances 0.000 claims 3
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SG10202010798QA SG10202010798QA (en) | 2019-11-08 | 2020-10-30 | Etching method and plasma processing apparatus |
| KR1020200145269A KR102737018B1 (ko) | 2019-11-08 | 2020-11-03 | 에칭 방법 및 플라즈마 처리 장치 |
| TW109138387A TWI887292B (zh) | 2019-11-08 | 2020-11-04 | 蝕刻方法及電漿處理裝置 |
| CN202011215778.6A CN112786440B (zh) | 2019-11-08 | 2020-11-04 | 蚀刻方法及等离子体处理装置 |
| US17/090,991 US11600501B2 (en) | 2019-11-08 | 2020-11-06 | Etching method and plasma processing apparatus |
| US18/114,998 US20230207343A1 (en) | 2019-11-08 | 2023-02-28 | Etching method and plasma processing apparatus |
| KR1020240172446A KR20250004987A (ko) | 2019-11-08 | 2024-11-27 | 에칭 방법 및 플라즈마 처리 장치 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019203326 | 2019-11-08 | ||
| JP2019203326 | 2019-11-08 | ||
| JP2020049399 | 2020-03-19 | ||
| JP2020049399 | 2020-03-19 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021153170A JP2021153170A (ja) | 2021-09-30 |
| JP2021153170A5 true JP2021153170A5 (https=) | 2023-05-12 |
| JP7343461B2 JP7343461B2 (ja) | 2023-09-12 |
Family
ID=77886708
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020169758A Active JP7343461B2 (ja) | 2019-11-08 | 2020-10-07 | エッチング方法及びプラズマ処理装置 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP7343461B2 (https=) |
| TW (1) | TWI887292B (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2023170855A (ja) * | 2022-05-20 | 2023-12-01 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
| WO2025150427A1 (ja) * | 2024-01-09 | 2025-07-17 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理システム |
| JP2025124446A (ja) * | 2024-02-14 | 2025-08-26 | キオクシア株式会社 | 半導体装置の製造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6012779B2 (ja) * | 1976-04-28 | 1985-04-03 | 株式会社日立製作所 | 半導体装置の製造方法 |
| JPS6482533A (en) * | 1987-09-25 | 1989-03-28 | Toshiba Corp | Dry etching |
| JPH06168914A (ja) * | 1992-05-13 | 1994-06-14 | Tokyo Electron Ltd | エッチング処理方法 |
| JPH08181116A (ja) * | 1994-12-26 | 1996-07-12 | Mitsubishi Electric Corp | ドライエッチング方法及びドライエッチング装置 |
| US10246772B2 (en) | 2015-04-01 | 2019-04-02 | Applied Materials, Inc. | Plasma enhanced chemical vapor deposition of films for improved vertical etch performance in 3D NAND memory devices |
| US10790140B2 (en) | 2017-02-14 | 2020-09-29 | Applied Materials, Inc. | High deposition rate and high quality nitride |
| JP7366918B2 (ja) | 2018-03-16 | 2023-10-23 | ラム リサーチ コーポレーション | 誘電体における高アスペクト比フィーチャのプラズマエッチング化学物質 |
-
2020
- 2020-10-07 JP JP2020169758A patent/JP7343461B2/ja active Active
- 2020-11-04 TW TW109138387A patent/TWI887292B/zh active
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