JP7343461B2 - エッチング方法及びプラズマ処理装置 - Google Patents

エッチング方法及びプラズマ処理装置 Download PDF

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JP7343461B2
JP7343461B2 JP2020169758A JP2020169758A JP7343461B2 JP 7343461 B2 JP7343461 B2 JP 7343461B2 JP 2020169758 A JP2020169758 A JP 2020169758A JP 2020169758 A JP2020169758 A JP 2020169758A JP 7343461 B2 JP7343461 B2 JP 7343461B2
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film
silicon
etching
etching method
gas
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JP2020169758A
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Japanese (ja)
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JP2021153170A5 (https=
JP2021153170A (ja
Inventor
喬大 横山
幕樹 戸村
嘉英 木原
隆太郎 須田
貴俊 大類
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to SG10202010798QA priority Critical patent/SG10202010798QA/en
Priority to KR1020200145269A priority patent/KR102737018B1/ko
Priority to CN202011215778.6A priority patent/CN112786440B/zh
Priority to TW109138387A priority patent/TWI887292B/zh
Priority to US17/090,991 priority patent/US11600501B2/en
Publication of JP2021153170A publication Critical patent/JP2021153170A/ja
Priority to US18/114,998 priority patent/US20230207343A1/en
Publication of JP2021153170A5 publication Critical patent/JP2021153170A5/ja
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Publication of JP7343461B2 publication Critical patent/JP7343461B2/ja
Priority to KR1020240172446A priority patent/KR20250004987A/ko
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  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Plasma Technology (AREA)
JP2020169758A 2019-11-08 2020-10-07 エッチング方法及びプラズマ処理装置 Active JP7343461B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
SG10202010798QA SG10202010798QA (en) 2019-11-08 2020-10-30 Etching method and plasma processing apparatus
KR1020200145269A KR102737018B1 (ko) 2019-11-08 2020-11-03 에칭 방법 및 플라즈마 처리 장치
TW109138387A TWI887292B (zh) 2019-11-08 2020-11-04 蝕刻方法及電漿處理裝置
CN202011215778.6A CN112786440B (zh) 2019-11-08 2020-11-04 蚀刻方法及等离子体处理装置
US17/090,991 US11600501B2 (en) 2019-11-08 2020-11-06 Etching method and plasma processing apparatus
US18/114,998 US20230207343A1 (en) 2019-11-08 2023-02-28 Etching method and plasma processing apparatus
KR1020240172446A KR20250004987A (ko) 2019-11-08 2024-11-27 에칭 방법 및 플라즈마 처리 장치

Applications Claiming Priority (4)

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JP2019203326 2019-11-08
JP2019203326 2019-11-08
JP2020049399 2020-03-19
JP2020049399 2020-03-19

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JP2021153170A JP2021153170A (ja) 2021-09-30
JP2021153170A5 JP2021153170A5 (https=) 2023-05-12
JP7343461B2 true JP7343461B2 (ja) 2023-09-12

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TW (1) TWI887292B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023170855A (ja) * 2022-05-20 2023-12-01 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
WO2025150427A1 (ja) * 2024-01-09 2025-07-17 東京エレクトロン株式会社 エッチング方法及びプラズマ処理システム
JP2025124446A (ja) * 2024-02-14 2025-08-26 キオクシア株式会社 半導体装置の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016197719A (ja) 2015-04-01 2016-11-24 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ３ｄ ｎａｎｄメモリデバイスにおける垂直エッチング性能の改善のための、膜のプラズマ化学気相堆積
US20180233356A1 (en) 2017-02-14 2018-08-16 Applied Materials, Inc. High deposition rate and high quality nitride
WO2019178030A1 (en) 2018-03-16 2019-09-19 Lam Research Corporation Plasma etching chemistries of high aspect ratio features in dielectrics

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6012779B2 (ja) * 1976-04-28 1985-04-03 株式会社日立製作所 半導体装置の製造方法
JPS6482533A (en) * 1987-09-25 1989-03-28 Toshiba Corp Dry etching
JPH06168914A (ja) * 1992-05-13 1994-06-14 Tokyo Electron Ltd エッチング処理方法
JPH08181116A (ja) * 1994-12-26 1996-07-12 Mitsubishi Electric Corp ドライエッチング方法及びドライエッチング装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016197719A (ja) 2015-04-01 2016-11-24 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ３ｄ ｎａｎｄメモリデバイスにおける垂直エッチング性能の改善のための、膜のプラズマ化学気相堆積
US20180233356A1 (en) 2017-02-14 2018-08-16 Applied Materials, Inc. High deposition rate and high quality nitride
WO2019178030A1 (en) 2018-03-16 2019-09-19 Lam Research Corporation Plasma etching chemistries of high aspect ratio features in dielectrics

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JP2021153170A (ja) 2021-09-30
TW202125625A (zh) 2021-07-01
TWI887292B (zh) 2025-06-21

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