TWI887292B - 蝕刻方法及電漿處理裝置 - Google Patents

蝕刻方法及電漿處理裝置 Download PDF

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Publication number
TWI887292B
TWI887292B TW109138387A TW109138387A TWI887292B TW I887292 B TWI887292 B TW I887292B TW 109138387 A TW109138387 A TW 109138387A TW 109138387 A TW109138387 A TW 109138387A TW I887292 B TWI887292 B TW I887292B
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Taiwan
Prior art keywords
film
silicon
etching
etching method
gas
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TW109138387A
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English (en)
Chinese (zh)
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TW202125625A (zh
Inventor
横山喬大
戸村幕樹
木原嘉英
須田隆太郎
大類貴俊
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日商東京威力科創股份有限公司
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  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Plasma Technology (AREA)
TW109138387A 2019-11-08 2020-11-04 蝕刻方法及電漿處理裝置 TWI887292B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2019-203326 2019-11-08
JP2019203326 2019-11-08
JP2020049399 2020-03-19
JP2020-049399 2020-03-19
JP2020-169758 2020-10-07
JP2020169758A JP7343461B2 (ja) 2019-11-08 2020-10-07 エッチング方法及びプラズマ処理装置

Publications (2)

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TW202125625A TW202125625A (zh) 2021-07-01
TWI887292B true TWI887292B (zh) 2025-06-21

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TW109138387A TWI887292B (zh) 2019-11-08 2020-11-04 蝕刻方法及電漿處理裝置

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JP (1) JP7343461B2 (https=)
TW (1) TWI887292B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023170855A (ja) * 2022-05-20 2023-12-01 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
WO2025150427A1 (ja) * 2024-01-09 2025-07-17 東京エレクトロン株式会社 エッチング方法及びプラズマ処理システム
JP2025124446A (ja) * 2024-02-14 2025-08-26 キオクシア株式会社 半導体装置の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180233356A1 (en) * 2017-02-14 2018-08-16 Applied Materials, Inc. High deposition rate and high quality nitride
WO2019178030A1 (en) * 2018-03-16 2019-09-19 Lam Research Corporation Plasma etching chemistries of high aspect ratio features in dielectrics

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6012779B2 (ja) * 1976-04-28 1985-04-03 株式会社日立製作所 半導体装置の製造方法
JPS6482533A (en) * 1987-09-25 1989-03-28 Toshiba Corp Dry etching
JPH06168914A (ja) * 1992-05-13 1994-06-14 Tokyo Electron Ltd エッチング処理方法
JPH08181116A (ja) * 1994-12-26 1996-07-12 Mitsubishi Electric Corp ドライエッチング方法及びドライエッチング装置
US10246772B2 (en) 2015-04-01 2019-04-02 Applied Materials, Inc. Plasma enhanced chemical vapor deposition of films for improved vertical etch performance in 3D NAND memory devices

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180233356A1 (en) * 2017-02-14 2018-08-16 Applied Materials, Inc. High deposition rate and high quality nitride
WO2019178030A1 (en) * 2018-03-16 2019-09-19 Lam Research Corporation Plasma etching chemistries of high aspect ratio features in dielectrics

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JP2021153170A (ja) 2021-09-30
JP7343461B2 (ja) 2023-09-12
TW202125625A (zh) 2021-07-01

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