JP2021097137A - 半導体モジュールおよび半導体装置 - Google Patents
半導体モジュールおよび半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 197
- 229910002601 GaN Inorganic materials 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
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- 239000000463 material Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
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Abstract
Description
本発明に係る半導体装置では、第1制御端子と第2制御端子が接触する。このため、半導体モジュール毎に信号配線を設ける必要がなく、信号配線を単純化できる。
図1は、実施の形態1に係る半導体モジュール1の正面図である。半導体モジュール1は、例えばパワーモジュールである。半導体モジュール1はパッケージ10を備える。パッケージ10には第1端子24、第2端子22および制御端子20が設けられる。第1端子24は、パッケージ10の上面14に設けられる。第2端子22および制御端子20はパッケージ10の側面12に設けられる。
図8は、実施の形態2に係る半導体装置202の正面図である。半導体装置202は、複数の半導体モジュール201を備える。半導体モジュール201は、制御端子220と第2端子222の構造が実施の形態1の半導体モジュール1と異なる。その他の構造は、実施の形態1と同様である。複数の半導体モジュール201の上にはバスバー50が設けられる。これにより、複数の半導体モジュール201の第1端子24は、バスバー50と電気的に接続される。
Claims (14)
- 第1電極と、第2電極と、前記第1電極と前記第2電極の間に流れる電流を制御する制御信号が入力される制御電極と、を有する半導体チップと、
上面と、前記上面と反対側の面である裏面と、前記上面と前記裏面との間に設けられた複数の側面と、を有し、前記半導体チップを収納するパッケージと、
前記パッケージに設けられ、前記第1電極と電気的に接続された第1端子と、
前記パッケージに設けられ、前記第2電極と電気的に接続された第2端子と、
前記制御電極と電気的に接続され、前記パッケージを囲むように前記パッケージの前記複数の側面の全てに設けられた制御端子と、
を備えることを特徴とする半導体モジュール。 - 前記制御端子は、環状であることを特徴とする請求項1に記載の半導体モジュール。
- 前記第2端子は、前記パッケージの前記複数の側面のうち少なくとも1つに設けられることを特徴とする請求項1または2に記載の半導体モジュール。
- 前記第2端子は、前記パッケージを囲むように前記パッケージの前記複数の側面の全てに設けられことを特徴とする請求項3に記載の半導体モジュール。
- 前記制御端子と前記第2端子とは、平面視で重なることを特徴とする請求項3または4に記載の半導体モジュール。
- 前記第1端子は、前記パッケージの前記上面に設けられることを特徴とする請求項1から5の何れか1項に記載の半導体モジュール。
- 前記パッケージの上方には、前記第1端子と電気的に接続されるバスバーが設けられることを特徴とする請求項6に記載の半導体モジュール。
- 前記半導体チップはワイドバンドギャップ半導体から形成されていることを特徴とする請求項1から7の何れか1項に記載の半導体モジュール。
- 前記ワイドバンドギャップ半導体は、炭化珪素、窒化ガリウム系材料またはダイヤモンドであることを特徴とする請求項8に記載の半導体モジュール。
- 第1半導体モジュールと、
第2半導体モジュールと、
を備え、
前記第1半導体モジュールは、
第1電極と、第2電極と、前記第1電極と前記第2電極の間に流れる電流を制御する制御信号が入力される第1制御電極と、を有する第1半導体チップと、
上面と、前記上面と反対側の面である裏面と、前記上面と前記裏面との間に設けられた側面と、を有し、前記第1半導体チップを収納する第1パッケージと、
前記第1パッケージに設けられ、前記第1電極と電気的に接続された第1端子と、
前記第1パッケージに設けられ、前記第2電極と電気的に接続された第2端子と、
前記第1制御電極と電気的に接続され、前記第1パッケージの前記側面に設けられた第1制御端子と、
を備え、
前記第2半導体モジュールは、
第3電極と、第4電極と、前記第3電極と前記第4電極の間に流れる電流を制御する制御信号が入力される第2制御電極と、を有する第2半導体チップと、
上面と、前記上面と反対側の面である裏面と、前記上面と前記裏面との間に設けられた側面と、を有し、前記第2半導体チップを収納する第2パッケージと、
前記第2パッケージに設けられ、前記第3電極と電気的に接続された第3端子と、
前記第2パッケージに設けられ、前記第4電極と電気的に接続された第4端子と、
前記第2制御電極と電気的に接続され、前記第2パッケージの前記側面に設けられた第2制御端子と、
を備え、
前記第1制御端子と前記第2制御端子は接触することを特徴とする半導体装置。 - 前記第1制御端子と前記第2制御端子は、互いに嵌合することを特徴とする請求項10に記載の半導体装置。
- 前記第1制御端子と前記第2制御端子の一方のみから配線が引き出されることを特徴とする請求項10または11に記載の半導体装置。
- 前記第1半導体チップまたは前記第2半導体チップはワイドバンドギャップ半導体から形成されていることを特徴とする請求項10から12の何れか1項に記載の半導体装置。
- 前記ワイドバンドギャップ半導体は、炭化珪素、窒化ガリウム系材料またはダイヤモンドであることを特徴とする請求項13に記載の半導体装置。
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JP2018093221A (ja) * | 2016-09-26 | 2018-06-14 | 株式会社パウデック | 半導体パッケージ、モジュールおよび電気機器 |
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