JP2021057592A - 半導体モジュール - Google Patents
半導体モジュール Download PDFInfo
- Publication number
- JP2021057592A JP2021057592A JP2020160930A JP2020160930A JP2021057592A JP 2021057592 A JP2021057592 A JP 2021057592A JP 2020160930 A JP2020160930 A JP 2020160930A JP 2020160930 A JP2020160930 A JP 2020160930A JP 2021057592 A JP2021057592 A JP 2021057592A
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- Prior art keywords
- semiconductor
- common wiring
- electrode
- resin mold
- semiconductor module
- Prior art date
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 101000685824 Homo sapiens Probable RNA polymerase II nuclear localization protein SLC7A6OS Proteins 0.000 description 1
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Abstract
Description
図1〜5に示すように、第1実施形態に係る半導体モジュール10は、第1半導体素子133および第2半導体素子143と、第1半導体素子133および第2半導体素子143を一体に封止する樹脂モールド120と、導電部材101〜104と、導電部材111,112,131,141とを備えている。図1〜5に示すx方向およびy方向は、半導体モジュール10の側方であり、xy平面方向は、半導体モジュール10の平面方向である。z方向は、平面方向に直交する上下方向である。
図1(a)に示すように、半導体モジュール10として、導電部材131,141は、樹脂モールド120から露出していない場合を例示して説明したが、これに限定されない。図9に示す半導体モジュール11のように、その上面側において、樹脂モールド120から突出する導電部材151,161を備えるものであってもよい。半導体モジュール11の他の構成は、半導体モジュール10と同様であるため、説明を省略する。
第1実施形態では、複数の半導体素子(第1半導体素子133、第2半導体素子143)が、互いに隣接する半導体素子と同じ向きで隣接する半導体素子と略平行に配置されていた状態を例示して説明したが、第2実施形態のように、隣接する半導体素子と逆の向きで隣接する半導体素子と略点対称に配置されていてもよい。
第1実施形態と同様に、第2実施形態においても、図17〜図19に示す半導体モジュール21〜23を変形例として適用できる。例えば、図17に示す半導体モジュール21のように、その上面側において、導電部材231,241に替えて、樹脂モールド220から突出する導電部材251,261を備えるものであってもよい。
第1実施形態および第2実施形態では、複数の半導体素子は、導電部材が外部端子としてが突出する方向(y方向)と垂直な方向(x方向)に並べて配置されていたが、外部端子が突出する方向に並べて配置されていてもよい。
第3実施形態においても、図25〜図27に示す半導体モジュール31〜33を変形例として適用できる。例えば、図25に示す半導体モジュール31のように、その上面側において、導電部材331,341に替えて、樹脂モールド320から突出する導電部材351,361を備えるものであってもよい。
第1実施形態においては、非共通配線用電極に相当する導電部材112は、樹脂モールド120から露出する下面側に向かって高い高段部112bと、高段部112bよりも低い低段部112aとを備え、これによって、共通配線が可能となっていたが、これに限定されない。
上記の各実施形態においては、2つの半導体素子を含む半導体モジュールを例示して説明したが、半導体モジュールには、3つ以上の半導体素子が含まれていてもよい。
上記の各実施形態においては、上面視したときに、ゲート端子等として機能する導電部材が樹脂モールドから側方に突出する半導体モジュールを例示して説明したが、これに限定されない。導電部材は、半導体モジュールの側方に突出していなくてもよい。
Claims (13)
- 複数の半導体素子(133,143,233,243,333,343,433,443,533,543,553,633,643)と、前記複数の半導体素子を一体に封止する樹脂モールド(120,220,320,420,520,620)と、前記複数の半導体素子の少なくとも1つに電気的に接続する複数の導電部材(111〜116,211〜216,311,312,411,412,511,512,571,611,612)と、を備えた半導体モジュール(10〜13,20〜23,30〜33,40,50,160)であって、
前記複数の半導体素子は、ゲート電極(75)と、第1電極(71)と、第2電極(72)とを備え、前記ゲート電極に電圧を印加することにより形成されたチャネルによって、前記半導体素子の前記第1電極側から前記第2電極側にキャリアが移動する絶縁ゲート型半導体素子であり、
前記複数の導電部材は、前記半導体モジュールの上面側または下面側で前記樹脂モールドから露出し、前記第1電極と前記第2電極の少なくともいずれか一方に電気的に接続する共通配線用電極(111,113,115,211,213,215,311,411,412,511,512,571,611)と、前記樹脂モールドから露出し前記共通配線用電極と異なる前記半導体素子の電極に電気的に接続する非共通配線用電極と、を含み、
前記共通配線用電極に接続される共通電極の配線幅は、前記非共通配線用電極の配線幅よりも広く、
前記複数の半導体素子および前記複数の導電部材は、前記共通配線用電極に前記共通配線を接続する場合に、前記非共通配線用電極と電気的に接続することなく、前記共通配線用電極が露出する前記樹脂モールドの面上の対向する一方の辺から他方の辺まで前記共通配線を設置できるように、配置されている、半導体モジュール。 - 前記共通配線用電極が露出する前記樹脂モールドの面上の対向する一方の辺から他方の辺まで略直進する帯状の領域であって、前記共通配線用電極が存在し、かつ、前記非共通配線用電極が存在しない領域である共通配線領域を備え、
前記共通配線は、前記共通配線領域内に設置される請求項1に記載の半導体モジュール。 - 前記複数の半導体素子は、隣接する半導体素子と同じ向きで前記隣接する半導体素子と略平行に配置されている請求項1または2に記載の半導体モジュール。
- 前記複数の半導体素子は、隣接する半導体素子と逆の向きで前記隣接する半導体素子と略点対称に配置されている請求項1または2に記載の半導体モジュール。
- 前記複数の導電部材は、前記複数の半導体素子のうち、第1の半導体素子の前記第1電極と、前記第1の半導体素子に隣接して配置される第2の半導体素子の前記第2電極とを接合する接合導電部材を含む請求項1〜4のいずれかに記載の半導体モジュール。
- 前記非共通配線用電極の少なくとも1つは、前記樹脂モールドから露出する面側に向かって高い高段部と、前記高段部よりも低い低段部とを備える請求項1〜5のいずれかに記載の半導体モジュール。
- 前記高段部は、前記樹脂モールドから露出しており、
前記低段部は、前記樹脂モールドから露出していない請求項6に記載の半導体モジュール。 - 前記共通配線用電極は、前記樹脂モールドの面の対向する1対の辺の双方から突出する位置まで延在している請求項1〜7のいずれかに記載の半導体モジュール。
- 前記半導体モジュールは、前記共通配線用電極が露出する面を実装面として配線基板(650)に実装され、
前記配線基板は、前記半導体モジュールが設置される配線部と、前記配線部の周囲に設けられたレジスト部とを含み、
前記樹脂モールドは、前記レジスト部よりも熱伝導率が高い請求項1〜8のいずれかに記載の半導体モジュール。 - 前記半導体モジュールの前記共通配線用電極が露出する面と対向する面は、前記樹脂モールドによって覆われている請求項1〜9のいずれかに記載の半導体モジュール。
- 前記共通配線用電極が露出する面を実装面として前記半導体モジュールが実装される配線基板(650)と、前記共通配線用電極が露出する面と対向する側に設置された筐体(670,671)の間に配置され、
前記半導体モジュールまたは前記配線基板における発熱は、前記樹脂モールドを介して前記筐体側に放熱される請求項10に記載の半導体モジュール。 - 前記樹脂モールドは、前記筐体との間に配置された放熱部材(680)を介して、前記筐体と接しており、
前記放熱部材の熱伝導率は、前記樹脂モールドの熱伝導率以上である請求項11に記載の半導体モジュール。 - 電動パワーステアリングシステム(80)に搭載された請求項1〜12のいずれかに記載の半導体モジュール。
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JP2003046053A (ja) * | 2001-07-27 | 2003-02-14 | Sanyo Electric Co Ltd | 半導体装置およびその製造方法 |
JP2004335493A (ja) * | 2003-03-13 | 2004-11-25 | Denso Corp | 半導体装置の実装構造 |
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