JP2021052144A - ウエーハの加工方法、及びウエーハの加工装置 - Google Patents
ウエーハの加工方法、及びウエーハの加工装置 Download PDFInfo
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- JP2021052144A JP2021052144A JP2019175694A JP2019175694A JP2021052144A JP 2021052144 A JP2021052144 A JP 2021052144A JP 2019175694 A JP2019175694 A JP 2019175694A JP 2019175694 A JP2019175694 A JP 2019175694A JP 2021052144 A JP2021052144 A JP 2021052144A
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- 238000003672 processing method Methods 0.000 title claims description 12
- 239000007788 liquid Substances 0.000 claims abstract description 48
- 238000003384 imaging method Methods 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 18
- 238000001514 detection method Methods 0.000 claims abstract description 11
- 238000005520 cutting process Methods 0.000 claims description 40
- 238000007664 blowing Methods 0.000 claims description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 235000012431 wafers Nutrition 0.000 claims 31
- 239000002184 metal Substances 0.000 abstract description 10
- 238000004891 communication Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/06—Grinders for cutting-off
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Dicing (AREA)
Abstract
Description
2:基台
10:ウエーハ
12:デバイス
14:分割予定ライン
16:金属膜
20:支持手段
21:X軸方向可動板
22:クランプ
23:支持台
24:ウエーハテーブル
24a:支持面
25:回転支柱
30:液体層形成手段
32:ノズル部
40:撮像手段
42:撮像カメラ
50:エアー吹付け手段
52:エアー吹付けノズル
60:X軸移動手段
70:切削手段
71:スピンドルユニット
72:回転スピンドル
73:切削ブレード
76:Z軸移動基台
77:切削手段支持部
80:Y軸移動手段
90:制御手段
100:分割溝
A:エアー
F:フレーム
M:表示モニター
T:シート
W:液体
Claims (5)
- 複数のデバイスが分割予定ラインによって区画され表面に形成されたウエーハを個々のデバイスチップに分割するウエーハの加工方法であって、
ウエーハを収容する開口部を有するフレームの該開口部にウエーハを位置付けてシートによってウエーハの表面とフレームとを一体に貼着する一体工程と、
フレームを固定する固定部と、ウエーハを支持する支持面を備え透明板で形成されたウエーハテーブルとから少なくとも構成された支持手段の該ウエーハテーブルの支持面に液体の層を形成する液体層形成工程と、
シート側を該液体の層が形成されたウエーハテーブルに載置し該シートを介してウエーハを該ウエーハテーブルに固定すると共に、フレームを該フレーム固定部で固定する固定工程と、
該ウエーハテーブルの支持面に対して反対側に位置付けられた撮像手段によって該ウエーハテーブルとシートとを透かしてウエーハの表面に形成された分割予定ラインを検出する検出工程と、
該検出工程で検出された分割予定ラインに対応する裏面に加工を施す加工工程と、
を含み構成されるウエーハの加工方法。 - 該液体層形成工程において使用される液体は水である請求項1に記載のウエーハの加工方法。
- 該加工工程において、切削ブレードを回転可能に備えた切削手段によって分割予定ラインに対応する裏面に切削加工を施す請求項1、又は2に記載のウエーハの加工方法。
- 該加工工程の後、該ウエーハテーブルと該シートとの間にエアーを吹き付けて一体になったフレームとウエーハを該支持手段から離反させて搬出する搬出工程が含まれる請求項1乃至3のいずれかに記載のウエーハの加工方法。
- 複数のデバイスが分割予定ラインによって区画され表面に形成されたウエーハを収容する開口部を有するフレームの該開口部にウエーハを位置付けてシートによってウエーハの表面とフレームとが一体になったウエーハを個々のデバイスチップに分割するウエーハの加工装置であって、
フレームを固定するフレーム固定部と、ウエーハを支持する支持面を備え透明板で形成されたウエーハテーブルとから少なくとも構成された支持手段と、
該ウエーハテーブルの支持面に液体の層を形成する液体層形成手段と、
該ウエーハテーブルの支持面に対して反対側に位置付け可能に配設された撮像手段と、
該ウエーハテーブルと該シートとの間にエアーを吹き付けるエアー吹付け手段と、
を含み構成されるウエーハの加工装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019175694A JP7286503B2 (ja) | 2019-09-26 | 2019-09-26 | ウエーハの加工方法、及びウエーハの加工装置 |
KR1020200109506A KR20210036805A (ko) | 2019-09-26 | 2020-08-28 | 웨이퍼의 가공 방법, 및 웨이퍼의 가공 장치 |
US17/024,926 US11515210B2 (en) | 2019-09-26 | 2020-09-18 | Wafer processing method and wafer processing apparatus |
TW109133029A TW202114069A (zh) | 2019-09-26 | 2020-09-24 | 晶圓的加工方法、及晶圓的加工裝置 |
DE102020212097.8A DE102020212097B4 (de) | 2019-09-26 | 2020-09-25 | Waferbearbeitungsverfahren zum teilen eines wafers und waferbearbeitungsvorrichtung |
US18/052,912 US20230066868A1 (en) | 2019-09-26 | 2022-11-05 | Wafer processing method and wafer processing apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019175694A JP7286503B2 (ja) | 2019-09-26 | 2019-09-26 | ウエーハの加工方法、及びウエーハの加工装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021052144A true JP2021052144A (ja) | 2021-04-01 |
JP7286503B2 JP7286503B2 (ja) | 2023-06-05 |
Family
ID=74873112
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2019175694A Active JP7286503B2 (ja) | 2019-09-26 | 2019-09-26 | ウエーハの加工方法、及びウエーハの加工装置 |
Country Status (5)
Country | Link |
---|---|
US (2) | US11515210B2 (ja) |
JP (1) | JP7286503B2 (ja) |
KR (1) | KR20210036805A (ja) |
DE (1) | DE102020212097B4 (ja) |
TW (1) | TW202114069A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102022210511A1 (de) | 2021-10-12 | 2023-04-13 | Disco Corporation | Bearbeitungsvorrichtung |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7325897B2 (ja) * | 2019-04-18 | 2023-08-15 | 株式会社ディスコ | 加工装置及び被加工物の加工方法 |
CN114169675B (zh) * | 2021-11-01 | 2022-12-13 | 深圳市匠心智汇科技有限公司 | 划切加工的监测方法、装置、终端设备及存储介质 |
CN114005785A (zh) * | 2021-11-22 | 2022-02-01 | 苏州科韵激光科技有限公司 | 一种旋转平台和晶圆裂片设备 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07237066A (ja) * | 1994-02-25 | 1995-09-12 | Seiko Seiki Co Ltd | 加工装置のチャック装置 |
JP2010087141A (ja) * | 2008-09-30 | 2010-04-15 | Disco Abrasive Syst Ltd | 加工装置 |
JP2012160659A (ja) * | 2011-02-02 | 2012-08-23 | Tokyo Seimitsu Co Ltd | レーザダイシング装置及び方法並びにウェーハ処理方法 |
JP2014229772A (ja) * | 2013-05-23 | 2014-12-08 | 株式会社ディスコ | 加工装置 |
JP2018006520A (ja) * | 2016-06-30 | 2018-01-11 | 株式会社ディスコ | ウェーハの加工方法 |
JP2019076932A (ja) * | 2017-10-25 | 2019-05-23 | 株式会社ディスコ | レーザー加工装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06232255A (ja) | 1993-01-29 | 1994-08-19 | Disco Abrasive Syst Ltd | ウェーハのダイシング方法 |
JPH10284449A (ja) * | 1997-04-11 | 1998-10-23 | Disco Abrasive Syst Ltd | ウェーハの裏面研磨・ダイシング方法及びシステム |
JP6401988B2 (ja) * | 2014-09-24 | 2018-10-10 | 株式会社ディスコ | 加工装置及びウエーハの加工方法 |
-
2019
- 2019-09-26 JP JP2019175694A patent/JP7286503B2/ja active Active
-
2020
- 2020-08-28 KR KR1020200109506A patent/KR20210036805A/ko unknown
- 2020-09-18 US US17/024,926 patent/US11515210B2/en active Active
- 2020-09-24 TW TW109133029A patent/TW202114069A/zh unknown
- 2020-09-25 DE DE102020212097.8A patent/DE102020212097B4/de active Active
-
2022
- 2022-11-05 US US18/052,912 patent/US20230066868A1/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07237066A (ja) * | 1994-02-25 | 1995-09-12 | Seiko Seiki Co Ltd | 加工装置のチャック装置 |
JP2010087141A (ja) * | 2008-09-30 | 2010-04-15 | Disco Abrasive Syst Ltd | 加工装置 |
JP2012160659A (ja) * | 2011-02-02 | 2012-08-23 | Tokyo Seimitsu Co Ltd | レーザダイシング装置及び方法並びにウェーハ処理方法 |
JP2014229772A (ja) * | 2013-05-23 | 2014-12-08 | 株式会社ディスコ | 加工装置 |
JP2018006520A (ja) * | 2016-06-30 | 2018-01-11 | 株式会社ディスコ | ウェーハの加工方法 |
JP2019076932A (ja) * | 2017-10-25 | 2019-05-23 | 株式会社ディスコ | レーザー加工装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102022210511A1 (de) | 2021-10-12 | 2023-04-13 | Disco Corporation | Bearbeitungsvorrichtung |
KR20230052221A (ko) | 2021-10-12 | 2023-04-19 | 가부시기가이샤 디스코 | 가공 장치 |
Also Published As
Publication number | Publication date |
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JP7286503B2 (ja) | 2023-06-05 |
KR20210036805A (ko) | 2021-04-05 |
US11515210B2 (en) | 2022-11-29 |
TW202114069A (zh) | 2021-04-01 |
DE102020212097B4 (de) | 2024-08-01 |
US20210098298A1 (en) | 2021-04-01 |
US20230066868A1 (en) | 2023-03-02 |
DE102020212097A1 (de) | 2021-04-01 |
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