JP2021052033A - 金属酸化物膜の形成方法及び成膜装置 - Google Patents

金属酸化物膜の形成方法及び成膜装置 Download PDF

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Publication number
JP2021052033A
JP2021052033A JP2019172301A JP2019172301A JP2021052033A JP 2021052033 A JP2021052033 A JP 2021052033A JP 2019172301 A JP2019172301 A JP 2019172301A JP 2019172301 A JP2019172301 A JP 2019172301A JP 2021052033 A JP2021052033 A JP 2021052033A
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Japan
Prior art keywords
metal oxide
gas
forming
oxide film
processing container
Prior art date
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Pending
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JP2019172301A
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English (en)
Japanese (ja)
Inventor
加藤 大輝
Daiki Kato
大輝 加藤
澤遠 倪
Zeyuan Ni
澤遠 倪
原田 豪繁
Takeshige Harada
豪繁 原田
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2019172301A priority Critical patent/JP2021052033A/ja
Priority to PCT/JP2020/034195 priority patent/WO2021054230A1/fr
Publication of JP2021052033A publication Critical patent/JP2021052033A/ja
Pending legal-status Critical Current

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP2019172301A 2019-09-20 2019-09-20 金属酸化物膜の形成方法及び成膜装置 Pending JP2021052033A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2019172301A JP2021052033A (ja) 2019-09-20 2019-09-20 金属酸化物膜の形成方法及び成膜装置
PCT/JP2020/034195 WO2021054230A1 (fr) 2019-09-20 2020-09-09 Procédé de formation d'un film d'oxyde métallique et appareil de formation de film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019172301A JP2021052033A (ja) 2019-09-20 2019-09-20 金属酸化物膜の形成方法及び成膜装置

Publications (1)

Publication Number Publication Date
JP2021052033A true JP2021052033A (ja) 2021-04-01

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ID=74883151

Family Applications (1)

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JP2019172301A Pending JP2021052033A (ja) 2019-09-20 2019-09-20 金属酸化物膜の形成方法及び成膜装置

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JP (1) JP2021052033A (fr)
WO (1) WO2021054230A1 (fr)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101257545B1 (ko) * 2008-11-17 2013-04-23 주식회사 인실리코텍 유기 골격 구조체
WO2012124913A2 (fr) * 2011-03-15 2012-09-20 주식회사 메카로닉스 Composé organométallique noble du groupe iv-b et procédé de préparation correspondant
WO2014140672A1 (fr) * 2013-03-15 2014-09-18 L'air Liquide, Societe Anonyme Pour I'etude Et I'exploitation Des Procedes Georges Claude Molécules de bis(alkylimido)-bis-(alkylamido) molybdène pour le dépôt de films contenant du molybdène
JP6192966B2 (ja) * 2013-04-01 2017-09-06 株式会社日立国際電気 半導体装置の製造方法、基板処理装置及びプログラム
JP2019016778A (ja) * 2017-07-07 2019-01-31 東京エレクトロン株式会社 半導体装置の製造方法及び金属酸化物膜の形成方法

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Publication number Publication date
WO2021054230A1 (fr) 2021-03-25

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