JP2021048340A - 半導体装置及び半導体装置の製造方法 - Google Patents
半導体装置及び半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 100
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 47
- 229910052751 metal Inorganic materials 0.000 claims abstract description 142
- 239000002184 metal Substances 0.000 claims abstract description 142
- 239000003990 capacitor Substances 0.000 claims abstract description 117
- 239000000758 substrate Substances 0.000 claims abstract description 56
- 230000004888 barrier function Effects 0.000 claims abstract description 27
- 239000000463 material Substances 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 39
- 238000005530 etching Methods 0.000 claims description 34
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 115
- 239000011229 interlayer Substances 0.000 description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 229910052710 silicon Inorganic materials 0.000 description 18
- 239000010703 silicon Substances 0.000 description 18
- 238000005229 chemical vapour deposition Methods 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 238000001020 plasma etching Methods 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- 238000001459 lithography Methods 0.000 description 7
- 229910052721 tungsten Inorganic materials 0.000 description 7
- 239000010937 tungsten Substances 0.000 description 7
- 229910001069 Ti alloy Inorganic materials 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 5
- -1 tungsten nitride Chemical class 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000004451 qualitative analysis Methods 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5223—Capacitor integral with wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/642—Capacitive arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
第1の実施形態の半導体装置は、半導体基板と、半導体基板の上に設けられ、メタル層と、メタル層の下面及び側面に接するバリアメタル層とを有する配線層と、半導体基板の上に設けられ、バリアメタル層と同一材料のキャパシタ下部電極と、キャパシタ下部電極の上に設けられたキャパシタ絶縁膜と、キャパシタ絶縁膜の上に設けられたキャパシタ上部電極と、を備え、半導体基板から下部電極の上面までの距離は、半導体基板から配線層の上面までの距離以下であり、半導体基板から下部電極の下面までの距離は、半導体基板から配線層の下面までの距離よりも大きい。
第2の実施形態の半導体装置は、キャパシタ下部電極とバリアメタル層とが連続する点で、第1の実施形態の半導体装置と異なる。以下、第1の実施形態と重複する内容については、一部記述を省略する。
18 第1の配線層(配線層)
18a メタル層
18b バリアメタル層
20 キャップ絶縁膜
22 キャパシタ下部電極
24 キャパシタ絶縁膜
26 キャパシタ上部電極
50 第1の絶縁膜
52 第2の絶縁膜
52a 一部の領域
54 第3の絶縁膜
54a 凹部
54b 溝
56 第1の金属膜
58 第2の金属膜
59 第4の絶縁膜
60 第3の金属膜
100 アナログデジタル混載LSI(半導体装置)
200 アナログデジタル混載LSI(半導体装置)
Claims (9)
- 半導体基板と、
前記半導体基板の上に設けられ、メタル層と、前記メタル層の下面及び側面に接するバリアメタル層とを有する配線層と、
前記半導体基板の上に設けられ、前記バリアメタル層と同一材料のキャパシタ下部電極と、
前記キャパシタ下部電極の上に設けられたキャパシタ絶縁膜と、
前記キャパシタ絶縁膜の上に設けられたキャパシタ上部電極と、
を備え、
前記半導体基板から前記キャパシタ下部電極の上面までの距離は、前記半導体基板から前記配線層の上面までの距離以下であり、
前記半導体基板から前記キャパシタ下部電極の下面までの距離は、前記半導体基板から前記配線層の下面までの距離よりも大きい、半導体装置。 - 前記配線層の上面に接し、前記キャパシタ絶縁膜と連続するキャップ絶縁膜を、更に備える請求項1記載の半導体装置。
- 前記キャパシタ下部電極の厚さは、前記バリアメタル層の厚さ以下である請求項1又は請求項2記載の半導体装置。
- 前記キャパシタ下部電極と前記バリアメタル層とは連続する請求項1ないし請求項3いずれか一項記載の半導体装置。
- 前記キャパシタ絶縁膜は窒化シリコンである請求項1ないし請求項4いずれか一項記載の半導体装置。
- 前記半導体基板から前記キャパシタ下部電極の上面までの距離は、前記半導体基板から前記配線層の上面までの距離と同一である請求項1ないし請求項5いずれか一項記載の半導体装置。
- 半導体基板の上に、第1の絶縁膜を形成し、
前記第1の絶縁膜の上に、第2の絶縁膜を形成し、
前記第2の絶縁膜の一部の領域をエッチングにより除去し、
前記第2の絶縁膜の上に、第3の絶縁膜を形成し、
前記第3の絶縁膜に前記第2の絶縁膜に達する溝を形成し、
前記溝の中、及び、前記第3の絶縁膜の上に第1の金属膜を形成し、
前記第1の金属膜の上に第2の金属膜を形成し、
前記第3の絶縁膜の上の前記第2の金属膜を除去し、
前記一部の領域のエッチングにより生じた段差により形成された前記第3の絶縁膜の表面の凹部に前記第1の金属膜を残して、前記第3の絶縁膜の上の前記第1の金属膜を化学的機械研磨法により除去し、
前記第1の金属膜及び前記第3の絶縁膜の上に、第4の絶縁膜を形成し、
前記第4の絶縁膜の上に第3の金属膜を形成し、
前記第3の金属膜をパターニングし、前記凹部の前記第1の金属膜の上の前記第4の絶縁膜の上に前記第3の金属膜を残存させる半導体装置の製造方法。 - 前記第2の絶縁膜、前記第4の絶縁膜は窒化シリコンである請求項7記載の半導体装置の製造方法。
- 前記第2の金属膜は銅である請求項7又は請求項8記載の半導体装置の製造方法。
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JP2002319625A (ja) * | 2001-04-23 | 2002-10-31 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2004273939A (ja) * | 2003-03-11 | 2004-09-30 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2004312007A (ja) * | 2003-04-03 | 2004-11-04 | Samsung Electronics Co Ltd | 金属−絶縁体−金属キャパシタを含む二重ダマシン配線構造及びその製造方法 |
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JP2014510400A (ja) * | 2011-03-04 | 2014-04-24 | インテル・コーポレーション | 同じ誘電体層にキャパシタ及び金属配線が集積された半導体構造 |
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JP5135827B2 (ja) | 2007-02-27 | 2013-02-06 | 株式会社日立製作所 | 半導体装置及びその製造方法 |
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JP2002009256A (ja) * | 2000-06-19 | 2002-01-11 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP2002319625A (ja) * | 2001-04-23 | 2002-10-31 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2004273939A (ja) * | 2003-03-11 | 2004-09-30 | Toshiba Corp | 半導体装置およびその製造方法 |
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