JP2021044554A - Moisture resistant chip scale package light emitting element - Google Patents

Abstract

To provide a light emitting element configured to prevent oxygen and moisture from coming into contact with a moisture sensitive photoluminescent material used in the light emitting element.SOLUTION: In a chip scale package (CSP) type light emitting element 1 including a light emitting semiconductor die 10 and a multilayer photoluminescence (PL) structure 20 arranged on the light emitting semiconductor die, the PL structure includes a second PL layer 22 and a first PL layer 21 disposed on the second PL layer, the first PL layer functions as a photoluminescent layer or a barrier layer that protects the second PL layer from ambient oxygen and moisture, the first PL layer includes a low moisture sensitive PL material 212 dispersed in a first polymer matrix material 211, and the second PL layer includes a moisture sensitive PL material 222 dispersed in a second polymeric material 221.SELECTED DRAWING: Figure 1A

Description

See citation of related application

The present application claims interests and priorities to Taiwan Patent Application No. 105124965 filed on August 5, 2016 and Chinese Patent Application No. 2016106484267.7 filed on August 9, 2016. The entire disclosures of both applications are incorporated herein by reference.

background

Technical Fields The present disclosure relates to light emitting devices, and more particularly to oxygen and moisture resistant chipscale packaged light emitting devices, including light emitting semiconductor dies that generate electromagnetic radiation during operation.
Description of related technology

Light emitting elements (LEDs) are widely used in various applications such as general lighting, backlight units, traffic signals, portable devices, automobile lighting, and the like. Generally, the light emitting semiconductor die is arranged in a package structure such as a lead frame to form a package type LED. Further, a photoluminescence material may be contained in the package structure, and a part of the primary light (for example, blue light) emitted from the light emitting semiconductor die may be a part of the secondary light (for example, yellow light) having a longer wavelength. And mixes light of different wavelengths to produce white light. To meet specifications in various lighting applications, it is desirable to have various photoluminescent materials with appropriate spectral reference values.

For example, a liquid crystal display (LCD) typically uses an LED as the backlight source. In this application example, the narrower the full width at half maximum (FWHM) of the emission spectrum, the higher the color purity of the photoluminescent material, so that the color gamut of the LCD becomes wider and a clear color image can be provided. Furthermore, for general lighting applications, the use of a red photoluminescence material with a narrow FWHM emission spectrum for an LED excessively sacrifices its light conversion efficiency by down-converting the minimum amount of primary light. Without this, the color rendering index (CRI) of light can be substantially improved. Therefore, the LED can have high CRI and good luminous efficiency at the same time.

Currently, there are several photoluminescence materials from which FWHM can obtain a narrower optical spectrum, such as fluoride photoluminescence materials or semiconductor nanocrystal materials (eg, quantum dots). However, these photoluminescent materials are susceptible to oxygen or moisture. For example, fluoride photoluminescent materials include highly reactive transition metal ion activators (eg, manganese, Mn ⁴⁺ ) that can oxidize when exposed to oxygen or moisture leached from the ambient environment. Oxidation of the activator inactivates the photoluminescent materials, so that these photoluminescent materials gradually lose their wavelength conversion ability, and as a result, the predetermined brightness gradually increases during the predetermined operating life. Or the color spectrum shifts. Therefore, several approaches have been proposed in the LED industry to mitigate the effects of oxygen or moisture on these moisture sensitive photoluminescent materials.

For example, in one approach, a manganese-activated fluoride fluorophore material with a protective capsule layer formed on the outer surface of each fluorophore particle is used. The capsule layer is a manganese-free fluoride phosphor material that mitigates the degradation mechanism caused by oxygen or moisture. Another approach proposes another fluoride fluorophore material that addresses the degradation problem described above, in which the fluorophore particles include an inner region and an outer region for encapsulating the inner region and in the surface region. Manganese concentration is lower than in the inner region. Both approaches address the problem of material degradation due to oxygen or moisture by minimizing the exposure of manganese to oxygen or moisture. In the case of the above solution, although it is possible to delay the deterioration process of the fluoride photoluminescent material due to oxygen or moisture, it is still impossible to completely avoid the deterioration. In addition, it is extremely difficult to completely coat each fluoride photoluminescent material particle with a manganese-free layer or a low-concentration manganese layer, which also increases the cost of producing a phosphor. Moreover, the presence of the capsule layer also reduces the photoconversion efficiency of the fluoride photoluminescent material.

Quantum dots (QDs) generally refer to small semiconductor crystals of II-IV, III-V, IV-VI or IV materials, the size of which (eg, diameter) is on the order of about 1 nm to about 50 nm. Therefore, it can be used as a photoluminescence material having an extremely narrow FWHM spectrum. However, if there are excessive defects and unbonded hands on the QD surface, there is a possibility of non-luminescent electron-hole recombination with considerably low quantum efficiency. Furthermore, when the QD comes into contact with oxygen or moisture, the surface of the QD is easily oxidized by a photochemical reaction. To create a QD with higher luminous efficiency and stability, another inorganic semiconductor shell is created on the QD core to form a core / shell structure. In this arrangement, the shell is considered a protective layer, increasing luminous efficiency by reducing surface defects and improving material stability by minimizing photochemical reactions on the QD surface. Therefore, the core / shell QD can have higher photoluminescence efficiency and higher stability against photochemical oxidation. However, as with fluoride phosphor materials, the use of core / shell structures can delay QD degradation, but cannot completely prevent QD degradation.

Another solution has been proposed to improve the LED packaging structure to increase the stability of the LED and minimize the oxidation process by the transition metal activator of the fluoride photoluminescent material. For example, in one approach, leadframe LED devices have been proposed to include a transparent silicone encapsulation layer disposed on a fluorosilicone slurry layer. If the LED package is not covered with a protective encapsulation layer, oxygen or moisture can easily penetrate the LED package and react with the fluorophore material. Therefore, the transparent silicone encapsulating layer functions as a barrier layer to reduce the penetration of ambient oxygen and moisture. In another approach, another leadframe type LED device has been proposed in which the phosphor material dispersed in the silicone material is placed in the optical cavity formed by the leadframe. In this approach, the ratio of silicone to weight percentage to fluoroslurry is set higher, resulting in higher silicone content and higher oxygen / moisture resistance. Therefore, deterioration due to oxygen / humidity can be reduced accordingly.

It will be appreciated that the above solutions to reduce the penetration of oxygen and moisture at the package level have been developed for leadframe LEDs. However, when the lead frame is used as a housing or a housing, the LED package size becomes large. Moreover, if a thicker silicone coating layer or a larger amount of silicone is used to improve the barrier properties, the overall size of the LED will be further increased. Therefore, such a solution is not suitable for some electronic products in which LEDs are embedded. This is because these electronic products, such as LED backlights for portable electronic devices or LED TVs, continue to be oriented towards thinner and more compact sizes. In order to meet such strict physical space specifications, it is desirable to manufacture the LED in a compact size. Therefore, chip scale package (CSP) type LEDs are attracting more and more attention in the LED industry because they are advantageous in terms of size as compared with other LED packages. However, the limited size of the LED makes it more difficult to prevent external oxygen and moisture from entering the LED package.

Therefore, it is necessary to provide a compact CSP type LED using a moisture-sensitive photoluminescence material to improve the optical characteristics while maintaining excellent barrier characteristics against external oxygen and moisture during a predetermined operating life. ing.

Overview

In some embodiments of the present disclosure, a moisture barrier structure is configured to prevent or minimize contact of oxygen and moisture with the moisture sensitive photoluminescent material used in the light emitting device. It is an object of the present invention to provide a light emitting element. Desirably, embodiments of the moisture barrier structure retain the advantage of a low form factor of the chipscale packaged light emitting device without significantly increasing the package size of the light emitting device.

In order to achieve the above object, the light emitting element according to some embodiments of the present disclosure includes a light emitting semiconductor die, a multilayer photoluminescence structure disposed on the light emitting semiconductor die, and an edge surface of the light emitting semiconductor die. And a reflective structure that surrounds the edge face of the photoluminescence structure. The photoluminescence structure includes a second photoluminescence layer and a first photoluminescence layer disposed on the second photoluminescence layer. The first photoluminescence layer is composed of a first photoluminescence material (for example, a photoluminescent material having low humidity sensitivity) dispersed in the first polymer matrix material, and the second photoluminescence layer is , Consists of a second photoluminescent material (eg, a moisture sensitive photoluminescent material) dispersed within the second polymer matrix material. The reflective structure consists of light-scattering particles (eg, non-moisture-sensitive light-scattering particles) dispersed within a third polymer matrix material.

In order to achieve the above object, the light emitting device according to another embodiment of the present disclosure includes a light emitting semiconductor die, a multilayer photoluminescence structure disposed on the light emitting semiconductor die, and an encapsulation that covers the photoluminescence structure. It has a structure. The photoluminescence structure includes a second photoluminescence layer and a first photoluminescence layer that covers the second photoluminescence layer. The first photoluminescence layer is composed of a first photoluminescence material (for example, a photoluminescent material having low humidity sensitivity) dispersed in the first polymer matrix material, and the second photoluminescence layer is , Consists of a second photoluminescent material (eg, a moisture sensitive photoluminescent material) dispersed within the second polymer matrix material. The encapsulation structure comprises a substantially transparent third polymeric material.

In order to achieve the above object, the light emitting element encapsulated by using a lead frame or a submount substrate is embodied in a moisture resistant multilayer photoluminescent structure according to another embodiment of the present disclosure, and is embodied in a light emitting semiconductor die, a package. It comprises a structure and a photoluminescence structure. The package structure includes a lead frame or submount substrate, as well as a reflector that partially covers the lead frame to form an optical cavity. The light emitting semiconductor die arranged in the optical cavity is mechanically bonded to the electrodes of the lead frame and electrically connected. Further, the photoluminescence structure arranged on the light emitting semiconductor die arranged in the optical cavity has a second photoluminescence layer and a first photoluminescence layer arranged on the second photoluminescence layer. Contains a photoluminescence layer. The first photoluminescence layer contains a first photoluminescence material (for example, a photoluminescent material having low humidity sensitivity) dispersed in the first polymer matrix material, and the second photoluminescence layer is , Includes a second photoluminescent material (eg, a moisture sensitive photoluminescent material) dispersed within the second polymer matrix material.

Accordingly, the present disclosure provides at least the following technical advantages of some embodiments: The first photoluminescent layer containing the low humidity photoluminescent material acts as a barrier layer that protects the lower second photoluminescent layer containing the moisture sensitive photoluminescent material from ambient oxygen and moisture. To do. Reflective structures, encapsulated structures and packaged structures can also prevent external oxygen and moisture from penetrating into the interior, significantly reducing the degradation process of moisture sensitive photoluminescent materials. In other words, the low humidity sensitive photoluminescence layer not only functions as a light conversion layer, but also functions as a protective barrier layer of the lower moisture sensitive photoluminescence layer.

Specifically, in the first photoluminescence layer, both the first polymer matrix material and the low humidity photoluminescence material should reduce or minimize the penetration of ambient oxygen and moisture. It is composed of. Thus, the oxygen and moisture barrier layer in which the first photoluminescence layer protects the lower second moisture-sensitive photoluminescence layer containing the moisture-sensitive photoluminescence material without significantly increasing the thickness of the package. Play the role of. As a result, the overall package size of the light emitting device embodied in the moisture resistant structure can be minimized and the small form factor specifications can be met.

In addition, the light emitting element may further include a getter layer containing a getter material that acts as an oxygen scavenger and a moisture scavenger along with a moisture resistant structure, thereby preventing the moisture sensitive photoluminescent material from coming into contact with external oxygen and moisture. It can be further suppressed.

Other aspects and embodiments of the present disclosure are also contemplated. The above abstracts and the following detailed description are not intended to limit this disclosure to any particular embodiment, but merely to illustrate some embodiments of the present disclosure.

Or FIG. 5 is a schematic cross-sectional view showing an LED according to some embodiments of the present disclosure. and It is a schematic diagram of the shadow mask used when making the pattern type photoluminescence layer for LED shown in FIG. 1C and FIG. 1D. Or FIG. 5 is a schematic cross-sectional view showing an LED according to some embodiments of the present disclosure. FIG. 5 is a schematic cross-sectional view showing an LED according to some embodiments of the present disclosure. Or FIG. 5 is a schematic cross-sectional view showing an LED according to some embodiments of the present disclosure. and FIG. 5 is a schematic cross-sectional view showing an LED according to some embodiments of the present disclosure.

Detailed explanation

Definitions The following definitions apply to some technical aspects described with respect to some embodiments of the invention. These definitions may be extended in the same manner in the present application.

As used herein, singular terms, whether unspecified or specified, include multiple objects unless otherwise indicated in the context. Thus, for example, when referring to one layer, it may include multiple layers, unless it is clear from the context.

As used herein, the term "set" means a collection of one or more components. Thus, for example, a set of layers may include a single layer or multiple layers. A plurality of components in a set may be referred to as a plurality of members in a set. The components of a set may be the same or different. In some cases, a plurality of components in a set may contain one or more common properties.

As used herein, the term "adjacent" refers to being close or adjacent. Adjacent components may be separated from each other or may actually be in direct contact with each other. In some cases, adjacent components may be connected to each other or integrally formed with each other. In some embodiments, when a component is placed "above" or "above" another component, the former component is placed directly on the latter component (eg,). It also includes the case of (direct physical contact) and the case where one or more intervening components are arranged between the former component and the latter component. In some embodiments, one component is located "below" another component, the former component is located directly below the latter component (eg,). , Direct physical contact) and the case where one or more intervening components are arranged between the former component and the latter component.

As used herein, the terms "connect", "connected" and "connect" refer to operational connections or associations. The connected components may be directly connected to each other, or may be indirectly connected to each other, for example via another set of components.

As used herein, the terms "about," "substantially," and "substantially" refer to the degree or degree to be considered. When used in connection with an event or situation, these terms, in addition to the case where the event or situation definitely occurs, also take into account, for example, the typical tolerance level of the manufacturing operation described herein. It may include the case where the situation almost occurs. For example, when used in connection with a number, these terms may include a range of variation within ± 10% of the number, eg, within ± 5%, within ± 4%, within ± 3%, Includes fluctuation ranges within ± 2%, within ± 1%, within ± 0.5%, within ± 0.1%, or within ± 0.05%. For example, "substantially" transparent refers to at least 70% light transmission in at least part or all of the visible spectrum, eg, at least 75%, at least 80%, at least 85% or at least 90%. It may indicate the light transmittance.

As used with respect to photoluminescence in the present application, the term "efficiency" or "quantum efficiency" refers to the ratio of the number of output photons to the number of input photons.

As used herein, the term "size" refers to characteristic dimensions. When the object is spherical (for example, particles), the size of the object may mean the diameter of the object. When the object is non-spherical, the size of the object may mean the diameter of the corresponding spherical object, in which case the corresponding spherical object is a series of substantially similar non-spherical objects. It exhibits or has derivable or measurable properties. Therefore, for example, when referring to a set of objects having a specific size, it is considered that the objects have a distribution of several sizes around the objects. Therefore, as used in the present application, the size of a set of objects may mean a typical size in a size distribution, for example, an average value, an intermediate value, or a peak value of the sizes.

FIG. 1A shows a schematic cross-sectional view of a light emitting device (LED) 1 according to some embodiments of the present disclosure. LED 1 includes a light emitting semiconductor die 10, a photoluminescence structure 20, and a reflection structure 30. The technical content will be described below.

The light emitting semiconductor die 10 is preferably a flip-chip type light emitting semiconductor die, and has an upper surface 11, a lower surface 12, an edge surface 13, and a set of electrodes 14. The upper surface 11 and the lower surface 12 are formed substantially parallel and face each other. The edge surface 13 is formed and stretched between the upper surface 11 and the lower surface 12, and connects the outer edge of the upper surface 11 to the outer edge of the lower surface 12.

A set of electrodes 14 or a plurality of electrodes are arranged on the lower surface 12. When electricity is applied to the light emitting semiconductor die 10 through a set of electrodes 14, electroluminescence is generated, and for example, primary light such as blue light or ultraviolet (UV) light is emitted to the outside. Most of the light produced by the light emitting semiconductor die 10 is radiated outward through the top surface 11 and the edge surface 13.

The photoluminescence structure 20 absorbs a part of the primary light (for example, blue light or UV light) emitted from the light emitting semiconductor die 10 to absorb a part of the secondary light (for example, red, yellow, green) having a longer wavelength. Or it may be emitted as blue). A portion of the primary light that has passed through the photoluminescent structure 20 is mixed with the secondary light converted by the photoluminescent structure 20 and is desired, for example, white light having a predetermined correlated color temperature (CCT). Produces light with a color appearance.

From the viewpoint of the device structure, the multilayer photoluminescence structure 20 (hereinafter, abbreviated as PL structure 20) includes an upper surface 201, a lower surface 202, and an edge surface 203. The upper surface 201 and the lower surface 202 are arranged so as to face each other, and the edge surface 203 is formed between the upper surface 201 and the lower surface 202 to connect the outer edge of the upper surface 201 to the outer edge of the lower surface 202.

The PL structure 20 is arranged on the light emitting semiconductor die 10. Specifically, the lower surface 202 of the PL structure 20 is adjacent to the upper surface 11 of the light emitting semiconductor die 10, so that the lower surface 202 covers the upper surface 11. In another embodiment, the bottom surface 202 may be spaced apart from the top surface 11 and a spacer or other structure (not shown) may be placed between the PL structure 20 and the light emitting semiconductor die 10. Good. In addition, the size of the lower surface 202 is preferably slightly larger than that of the upper surface 11, but this technical feature may be omitted or modified in other embodiments. More specifically, the PL structure 20 includes a first photoluminescence layer (hereinafter abbreviated as the first PL layer) 21 and a second photoluminescence layer (hereinafter abbreviated as the second PL layer). 22 is included, and the first PL layer 21 is arranged on the second PL layer 22. The first PL layer 21 may be laminated adjacent to the second PL layer 22, or may be spaced apart from the second PL layer 22 with spacers or other structures between the two. It may be possible to place it in.

The first PL layer 21 includes a first polymer matrix material 211 and a first photoluminescence material 212 (for example, a low humidity photoluminescence material) (hereinafter, abbreviated as low humidity PL material 212). You may be. The low humidity PL material 212 is dispersed in the first polymer matrix material 211. The low humidity PL material 212 produces longer wavelength secondary light (eg red, green or blue light) when irradiated with primary light (eg UV light) emitted from the light emitting semiconductor die 10. be able to. When the low humidity PL material 212 contains a fluorescent material, the fluorescent material generally contains a metal activator that is less susceptible to oxygen or moisture. Therefore, the low humidity PL material 212 is less likely to be inactivated due to oxidation by oxygen or moisture. In other words, the low humidity sensitive material 212 can maintain the desired light conversion performance in the presence of oxygen and moisture with a particular light brightness and desired light spectrum, thus increasing the impact of the ambient environment. It becomes difficult to receive. Examples of the low humidity sensitive material 212 include yttrium aluminum garnet (YAG) as a yellow fluorescent material, a nitride fluorescent material as a green fluorescent material, or an inorganic fluorescent material such as an oxynitride phosphor material such as β-sialon. Materials are included, but are not limited to this.

Since the low humidity PL material 212 is not easily affected by oxygen and moisture, it may be prepared as a barrier layer that resists the penetration of ambient oxygen or moisture. Table 1 shows the measurement results of the water vapor permeation rate (WVTR) of two layers having the same thickness of 2 mm. For Membrane A composed only of silicone material, the WVTR is 10.51 g / m ² / day. For the silicone material and the film B composed of the low moisture-sensitive photoluminescence material dispersed in the silicone material in an amount of 60% by weight (wt.%), The WVTR ^{decreased to 8.31 g / m 2} / day. did. As clearly demonstrated, the first PL layer 21 has a lower WVTR, so better moisture resistance barrier properties can be obtained when the low moisture sensitive PL material 212 is included in the first polymer matrix material 211. ..

Increasing the weight percentage of the low moisture sensitive PL material 212 to form a layered structure with a higher mounting density improves the oxygen and moisture barrier properties of the first PL layer 21. This result is due to the fact that the WVTR of inorganic materials is generally much lower than that of organic polymer materials. Therefore, it is desirable that the weight percentage of the low moisture sensitive PL material 212 with respect to the total weight of the first PL layer 21 is less than about 50%, less than about 60%, or less than about 70%. In order to increase the mounting density of the low humidity PL material 212, the medium particle size (D50) of the phosphor particles of the low humidity PL material 212 is preferably less than about 30 μm, less than about 20 μm, or less than about 10 μm. And.

In addition, both the low humidity PL material 212 and the first polymer matrix material 211 may function to resist the penetration of ambient oxygen or moisture. The first polymer matrix material 211 may be selected from polymeric materials with lower WVTR, eg, WVTR ^{less than about 10 g / m 2} / day measured at a layer thickness of 2 mm, to improve moisture barrier properties. Examples of the first polymer matrix material 211 include, but are not limited to, resin materials such as silicone materials.

As a result, the first PL layer 21 composed of the first polymer matrix material 211 and the low moisture sensitive PL material 212 can function as an oxygen and moisture barrier layer that resists the penetration of moisture, thereby providing a second. The risk of the PL layer 22 being exposed to ambient oxygen or moisture can be minimized or reduced. The second PL layer 22 contains a second polymer matrix material 221 and a different second photoluminescence material 222 (for example, a moisture-sensitive photoluminescence material) (hereinafter, abbreviated as a moisture-sensitive PL material 222). You may be. The moisture-sensitive PL material 222 is dispersed in the second polymer matrix material 221 and is firmly fixed. The moisture sensitive PL material 222 is preferably a secondary light (eg, red, green or) with a longer wavelength and a narrower FWHM while being irradiated by the primary light (eg, UV light) emitted from the light emitting semiconductor die 10. Blue light) can be generated. The moisture-sensitive PL material 222 may be characterized in that the FWHM of the photoluminescence is narrower than the photoluminescence of the low-moisture-sensitive PL material 212.

To give an example of the moisture sensitive PL material 222, there is a phosphor material activated by a reactive metal that tends to oxidize in the presence of oxygen or moisture. Another example of the moisture sensitive PL material 222 is a silicate phosphor material, which is easily hydrolyzed in the presence of moisture and is less stable than the YAG phosphor material. Another example of the moisture-sensitive PL material 222 is a semiconductor nanocrystal material (for example, quantum dots). Quantum dots can be a luminescence material that emits a specific spectrum when illuminated by higher energy primary light. The spectrum of the emitted light can be accurately adjusted by changing the particle size, shape and material composition of the quantum dots. However, when quantum dots are irradiated in the presence of oxygen or moisture, photoluminescence can significantly reduce photoluminescence intensity. Furthermore, if the quantum dots are photooxidized, the spectrum of the emitted light may shift to a shorter wavelength spectrum, i.e. a "blue shift" of the photoluminescence spectrum may occur.

Therefore, in the presence of oxygen or moisture, the humidity sensitive PL material 222 may lose a specific wavelength conversion function. As a result, the predetermined photoluminescence intensity or spectral shift gradually decreases during the predetermined operating life. In order to reduce the amount of oxygen or moisture reaching the moisture sensitive material 222, the first PL layer 21 is configured to function as a barrier layer against the ingress and penetration of ambient oxygen or moisture. Therefore, the operating life of the moisture-sensitive material 222 provided on the lower side is extended. Further, the second polymer matrix material 221 may be selected from polymer materials with a lower WVTR (eg, resin materials such as silicone materials with a lower WVTR), thereby reaching oxygen or moisture reaching the moisture sensitive PL material 222. The amount of can be further reduced.

In some embodiments, the example of the moisture sensitive material 222 may comprise a red fluoride phosphor material, which comprises at least one of the following: That is, (A) A ₂ [MF ₆ ]: M ⁴⁺ , where A is selected from Li, Na, K, Rb, Cs, NH ₄ and a combination of two or more of these, where M is Ge, Si, Selected from Sn, Ti, Zr and a combination of two or more of these, (B) E [MF ₆ ]: M ⁴⁺ , where E is Mg, Ca, Sr, Ba, Zn and two or more of these. Selected from the combination of Ge, Si, Sn, Ti, Zr and two or more of these, (C) Ba _0.65 Zr _0.35 F _2.70 : M ⁴⁺ , or (D) A ₃ [ZrF ₇ ]: M ⁴⁺ , where A is selected from Li, Na, K, Rb, Cs, NH ₄ and a combination of two or more of these.

Another example of the moisture sensitive material 222 includes quantum dots, which can be selected from semiconductor nanocrystal materials of group II-VI compounds, group III-V compounds, group IV-VI compounds and group IV compounds. However, it is not limited to this. For example, the II-VI group compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSte, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSedZn , CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HggZnTe, CdZnSeS, CdZnSeTe, CdZnSte, CdHgSeS, CdHgSeTe, CdHgSeS, CdHgSeTe, CdHgSeS, CdHgSeTe, CdHgSeS , AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, GaPAs, AlNP, AlNAs, AlPAs, InNP, InNAs, InPAs, GaAlNP, GaAlNAs, GaAlPAs, GaInNP, GaInNAs, GaInPA The IV-VI group compounds may contain PbS, PbSe, PbTe, SnS, SnSe, SnTe, SnSeS, SnSeTe, SnSte, PbSeS, PbSeTe, PbSte and the like. , SiC, SiGe and the like may be included.

The first PL layer 21 and the second PL layer 22 can be produced by using a method such as spray coating, dispensing, printing, or molding. An example of the formation of the first PL layer 21 is shown below. First, the low humidity PL material 212 is mixed into the uncured first polymer matrix material 211. Next, the slurry mixture is placed on a substrate or the like (not shown). Further, when the polymer matrix material 211 is cured (for example, solidified) and separated from the substrate, the first PL layer 21 is formed.

Although the first PL layer 21 can be formed by the above method, it is desirable to form the first PL layer 21 having a high mounting density, which includes the low humidity sensitive PL material 212. If the low humidity sensitive PL material 212 packed in the first PL layer 21 is sparse, the moisture resistance capacity may be reduced, which may result in poor quality of the barrier layer against ambient oxygen and moisture. Desirably, if the photoluminescence material 212 contains fluorescent particles, the first PL layer 21 shall be formed by the method disclosed in US Patent Publication No. US2010 / 0119839. The entire document is incorporated herein by reference. By using this method, the phosphor particles can be uniformly deposited and the thickness of the first PL layer 21 can be made uniform. Further, by using this method, the fluorescent particles are densely deposited to make the weight percentage of the low moisture sensitive material 212 with respect to the first PL layer 21 at least about 50%, at least about 60% or at least about 70%. This improves the moisture resistant barrier layer.

Further, in some embodiments, the first PL layer 21 and the second PL layer 22 are formed sequentially rather than in a single process, with the moisture sensitive material 222 of the second PL layer 22 being the first. It is prevented from being mixed with the first polymer matrix material 211 of the PL layer 21 of the above.

The reflection structure 30 surrounding the light emitting semiconductor die 10 and the PL structure 20 is configured to reflect the primary light emitted from the light emitting semiconductor die 10 and the secondary wavelength conversion light emitted from the PL structure 20. .. In other words, this light can be radiated outward from the top surface 201 of the PL structure 20, mainly or alone. Desirably, the reflective structure 30 directly covers the edge surface 13 of the light emitting semiconductor die 10 and the edge surface 203 of the PL structure 20.

Further, the reflective structure 30 may function as another barrier layer to reduce the amount of oxygen or moisture that permeates and reaches the moisture-sensitive PL material 222. The reflective structure 30 includes light scattering particles 32 dispersed in the third polymer matrix material 31. In order to achieve good moisture resistance barrier properties, the third polymer matrix material 31 preferably has a low WVTR polymer material, eg, a WVTR measured at a layer thickness of 2 mm ^{less than about 10 g / m 2} / day. It is possible to select from resin materials such as silicone materials. In addition, the weight percentage ratio of the light scattering particles 32 to the total weight of the reflective structure 30 is at least about 30%. Examples of the light scattering particles 32 ^{include, but are not limited to, TiO 2} , BN, SiO ² , Al ₂ O ₃ or other oxides, nitrides, or other ceramic materials.

The reflective structure 30 may be manufactured by a method including dispensing, printing, molding and the like. For example, first, the light scattering particles 32 may be dispersed in the third polymer matrix material 31 to form a composite material of the reflective structure 30. Next, the composite material may be arranged so as to surround the light emitting semiconductor die 10 and the PL structure 20 by dispensing, printing, molding, or the like. Finally, a curing process is performed to form the reflective structure 30.

FIG. 1B shows another schematic cross-sectional view of the LED according to some embodiments of the present disclosure. Optionally, the LED 1 further includes a substrate 40, and the light emitting semiconductor die 10 is arranged on the substrate 40. Examples of the substrate 40 include, but are not limited to, ceramic substrates, glass substrates, printed circuit boards or metal core printed circuit boards. In the LED 1 shown in FIG. 1B, the LED 1 shown in FIG. 1A is mechanically bonded onto the substrate 40, and the electrodes of the LED 1 are electrically attached to the bonding pad of the substrate 40 by using a manufacturing method such as eutectic bonding or reflow soldering. It can be manufactured by connecting with a target.

FIG. 1C shows another schematic cross-sectional view of the LED according to some embodiments of the present disclosure. The LED 1 includes a first PL layer 21 and a second PL layer 22 having different surface area sizes. Specifically, as can be seen from the top view, the size of the upper surface region including the extension portion 213 of the first PL layer 21 is larger than the upper surface region of the second PL layer 22. Therefore, the first PL layer 21 completely covers the second PL layer 22, whereas the extension portion 213 of the first PL layer 21 covers the reflective structure 30. In this arrangement, the second PL layer 22 is well enclosed and protected by both the first PL layer 21 and the reflective structure 30, while the extension 213 of the first PL layer 21 is external. Acts as a moisture barrier layer against oxygen or moisture.

The deposition methods disclosed in US Patent Publication No. US2010 / 0119839 to prepare the first PL layer 21 and the second PL layer 22 having different surface region sizes are shown in FIGS. 1E and 1F, respectively. It can be used with shadow masks 90 and 90'to define the patterning of layered deposits. It will be understood that the size of the hole 91 of the shadow mask 90 shown in FIG. 1E is larger than the size of the hole 91'of the shadow mask 90'shown in FIG. 1F. An example of forming the first PL layer 21 having the extension portion 213 on the second PL layer 20 is shown below. First, the shadow mask 90 is placed on a substrate or the like (not shown). Thereby, the low humidity PL material 212 and the first polymer matrix material 211 can be selectively deposited on the substrate through the holes 91. Next, the shadow mask 90 is removed. Further, the first polymer matrix material 211 is cured to prepare the first PL layer 21. A second PL layer 22 with a smaller surface area can be made by selective deposition using a mask 90'containing smaller holes 91'.

FIG. 1D is another schematic cross-sectional view of the LED according to some embodiments of the present disclosure. The second PL layer 22 of the LED device 1 may also include an extension portion 223 that surrounds the central portion of the remaining second PL layer 22 while covering the reflective structure 30. Therefore, the surface areas of the first PL layer 21 and the second PL layer 22 may be substantially the same size. However, the extension 223 of the second PL layer 22 does not contain or substantially does not contain the moisture sensitive PL material 222 provided in the center of the second PL layer 22, and the second polymer. Contains only matrix material 221. In this arrangement, the moisture sensitive PL material 222 is less exposed to oxygen or moisture around it. Therefore, the extension 223 containing the second polymer matrix material 221 can also function as a barrier layer for oxygen and moisture.

The extension 223 of the second PL layer 22 can be made without the inclusion of the moisture sensitive PL material 222 by using a selective deposition method using shadow masks 90 and 90'. Specifically, a shadow mask 90'with smaller pores 91'can be used to selectively deposit the moisture sensitive PL material 222, whereas the second polymer matrix material 221 is larger. Shadow masks 90 with holes 91 can be used (or without any shadow masks) to selectively deposit. As a result, the extension portion 223 that does not contain the moisture-sensitive PL material 222 can be produced.

According to the above detailed description, the LED 1 exhibits at least the following technical features.

From the viewpoint of the optical spectrum, the first PL layer 21 and the second PL layer 22 are irradiated with primary light such as blue light emitted from the light emitting semiconductor die 10 and are subjected to secondary conversion light having different wavelengths (for example,). , Green light and / or red light). Light containing different wavelengths is then mixed into one to produce light of a particular spectrum, for example white light with a particular CCT.

Further, the first PL layer 21 functions as a wavelength conversion layer, and is an oxygen and moisture barrier layer that reduces the situation where ambient oxygen and moisture enter and permeate the second PL layer 22 including the moisture-sensitive PL material 222. Also works as. The reflective structure 30 also reduces lateral penetration of ambient oxygen and moisture from the edges of the PL layers 21 and 22. Further, the light emitting semiconductor die 10 made of an inorganic material can suppress oxygen and moisture from passing vertically from its lower surface 12. In other words, the second PL layer 22 containing the moisture sensitive PL material 222 is substantially completely sealed by components such as, for example, the first PL layer 21, the reflective structure 30, and the light emitting semiconductor die 10. By forming a nearly sealed sealed state, the moisture sensitive PL material 222 of the second PL layer 22 is well protected from harmful effects caused by external oxygen or moisture. Desirably, the first polymer matrix material 211, the second polymer matrix material 221 and the third polymer matrix material 31 are selected from the polymer materials having a low WVTR to further improve the oxygen and moisture barrier properties and to further improve the moisture sensitive PL. Improves protection of material 222.

In addition, the first polymer matrix material 211 and the low humidity PL material 212 of the first PL layer 21 can both function to reduce the permeation of ambient oxygen or moisture, and thus are used in oxygen and moisture barrier layers. Therefore, it is not necessary to significantly increase the thickness of the first polymer matrix material 211. The low humidity sensitive PL material 212 is formed so that its particle size is smaller or the mounting density in the first PL layer 21 is higher, and the thickness of the first polymer matrix material 211 is proportional. It will be appreciated that a low humidity PL material 212 with a higher weight percentage is desired while preventing it from increasing. In general, as the weight percentage of the low humidity PL material 212 increases, the amount of the first polymer matrix material 211 may increase slightly. Therefore, the first PL layer 21 can maintain the minimum thickness in a state where the WVTR is relatively low. As a result, the overall size of the LED device 1 package can meet the small form factor specifications while maintaining good oxygen and moisture barrier properties.

Finally, if the reflection structure 30 does not sufficiently enclose the second PL layer 22, the surface area of the second PL layer 22 is configured to be smaller than the surface area of the first PL layer 21 so that the LED1 The lateral barrier property from the edge surface to the second PL layer 22 may be improved.

The description so far is a detailed description of the embodiment related to LED1. Other embodiments of LEDs according to the present disclosure will be described in detail below. It should be understood that some of the detailed description of the features and advantages of the following embodiments of the LED is similar to that of the LED 1 and will be omitted for brevity.

2A-2F are schematic cross-sectional views showing the LED 2 according to some embodiments of the present disclosure. As shown in FIG. 2A, the difference between the LED 2 and the LED 1 is that the LED 2 further includes a transparent barrier layer 50 in addition to the elements constituting the LED 1, such as the light emitting semiconductor 10, the PL structure 20 and the reflective structure 30. It is a point.

Specifically, the transparent barrier layer 50 is arranged on the PL structure 20 and extends outward to cover the reflective structure 30. Alternatively, the transparent barrier layer 50 may be arranged so as to selectively cover the PL structure 20, and the edge surface of the transparent barrier layer 50 may be surrounded and covered by the reflective structure 30 (not shown). .. Since the transparent barrier layer 50 is optically substantially transparent, it is possible to reduce the penetration of ambient oxygen and moisture into the inside while allowing light to pass through, so that the ambient oxygen and moisture with respect to the moisture-sensitive PL material 222 can be reduced. Existence diminishes. Examples of the transparent barrier layer 50 include a transparent inorganic layer (eg, glass) or a low WVTR polymer layer (eg, low WVTR epoxy or silicone). In manufacturing the LED 2 as shown in FIG. 2A, the LED 2 can be formed by laminating the transparent barrier layer 50 on the LED 1 using an adhesive.

As shown in FIG. 2B, the PL structure 20 of the LED 2 may further include an optically substantially transparent getter layer 24. Desirably, the getter layer 24 is arranged and sandwiched between the first PL layer 21 and the second PL layer 22. Although at least most of the surrounding oxygen and moisture is blocked by the transparent barrier layer 50 and / or the first PL layer 21, small amounts of oxygen and moisture can still penetrate through these moisture barrier structures. is there. The getter layer 24 is configured as an oxygen or moisture scavenger that either absorbs the remaining oxygen or moisture or reacts to the remaining amount of oxygen or moisture. This further protects the PL material 222, which reacts with oxygen and moisture in the second PL layer 22, in the embodiment described.

The getter layer 24 may further include a substantially transparent polymeric material 241 in which the getter material 242 is mixed within the transparent polymeric material 241. The transparent polymer material 241 includes, for example, a resin material such as a silicone material, a rubber material, and a plastic material, and is preferably a heat-resistant material that does not excessively deteriorate during the operation of the LED 2. The getter material 242 is, for example, zeolite, zeolite-based clay, calcium oxide, barium oxide, alumina, calcium, barium, titanium, alloy, water-absorbent oxide, activated charcoal, water-absorbent organic material, water-absorbent inorganic material, or two of these. It may contain a plurality of nanoparticles, such as a combination of two or more. Desirably, the size (eg, diameter) of the nanoparticles of the getter material 242 may be, for example, less than a quarter wavelength of visible light less than about 200 nm or less than about 100 nm. Regarding the manufacturing method, the getter layer 24 can be formed by a processing method such as dispensing, printing, molding, or spray coating.

The getter layer 24 may be embodied without containing getter particles. For example, the getter layer 24 can be formed by solidifying a transparent liquid phase getter material. For an example of the particle-free getter layer 24, see disclosure in US Patent Publication No. US2013 / 0181163.

As shown in FIG. 2C, the getter material 242 can be provided in the first PL layer 21 and / or the second PL layer 22 of the LED 2. For example, the getter material 242 is directly dispersed within the first polymer material 211 and / or the second polymer material 221. Similarly, as shown in FIG. 2D, the getter material 242 can be provided within the reflective structure 30. For example, the getter material 242 is dispersed in the third polymer matrix material 31. Therefore, ambient oxygen or moisture permeating into the first polymer material 211, the second polymer material 221 and / or the third polymer matrix material 31 is absorbed by the getter material 242 or reacted with the getter material 242. The moisture-sensitive PL material 222 is more sealed.

As shown in FIG. 2E, when the transparent barrier layer 50 contains an inorganic material (for example, a glass substrate) having a property of being substantially airtight, the order in which the first PL layer 21 and the second PL layer 22 are laminated in the LED 2 is changed. It can be reversed. That is, the second PL layer 22 is laminated on the first PL layer 21 so that the second PL layer 22 containing the moisture-sensitive PL material 222 is arranged adjacent to the transparent barrier layer 50. In this configuration, since the surrounding oxygen or moisture cannot penetrate the substantially airtight transparent barrier layer 50, the moving distance of the surrounding oxygen or moisture reaching the moisture-sensitive PL material 222 increases from the lower surface of the reflective structure 30. Therefore, the function of protecting the moisture-sensitive PL material 222 from external oxygen or moisture is further improved.

In another embodiment of the LED2, as shown in FIG. 2F, the second PL layer 22 is sandwiched between the transparent barrier layer 50 and the first PL layer 21, whereas the second PL layer 22 The bottom surface 224 and the edge surface 225 are configured to be substantially completely covered by the first PL layer 21. In other words, the second PL layer 22 is substantially completely encapsulated by both the transparent barrier layer 50 and the first PL layer 21. In this arrangement, the moisture sensitive PL material 222 can be better protected from external oxygen or moisture penetrating through the edge of the reflective structure 30.

In summary, there are various embodiments of LED2, such as the introduction of a transparent barrier layer 50, a getter layer 24 and / or a getter material 242. Further, when the transparent barrier layer 50 is substantially airtight, the second PL layer containing the moisture-sensitive photoluminescence material 222 is formed by reversing the stacking order of the first PL layer 21 and the second PL layer 22. 22 can be substantially completely encapsulated by the transparent barrier layer 50 and the first PL layer 21. Embodiments with these technical features can better protect the moisture sensitive PL material 222 from the harmful effects of ambient oxygen and moisture.

FIG. 3 is a schematic cross-sectional view showing the LED 3 according to some embodiments of the present disclosure. As shown in FIG. 2A, the difference between LED3 and LED2 is that LED3 further includes a moisture barrier reflective structure 60 surrounding the reflective structure 30.

It is desirable to form the reflective structure 30 with a low WVTR polymeric material so that the reflective structure acts as a better oxygen and moisture barrier. However, in the case of a low WVTR polymer material, for example, it tends to deteriorate under irradiation with higher energy primary light emitted from the LED semiconductor die 10 such as blue light or UV light, and yellowing or darkening is likely to occur. Also, these materials may have low thermal stability to heat. Therefore, low WVTR polymer materials may not be preferred in certain high power LED applications. For example, a phenyl-based silicone material has a lower WVTR than a methyl-based silicone material, but a methyl-based silicone material has higher thermal stability than a phenyl-based silicone material. To address this issue, the LED 3 is further configured to include an additional moisture barrier reflective structure 60 that surrounds and covers the outer surface of the reflective structure 30. In this arrangement, the reflective structure 30 is adjacent to the hot light emitting semiconductor die 10, so that the material is more thermally stable in a thermal environment and under blue / UV irradiation, even when the material has a higher WVTR. Can be configured using. That is, the main function of the reflective structure 30 is to provide a reflector for blue light or UV light emitted from the light emitting semiconductor die 10. On the other hand, the moisture barrier reflective structure 60 can function as an oxygen or moisture barrier layer by being constructed using a low WVTR polymer material. In the illustrated embodiment, the LED 3 has good stability against heat and radiation generated from the light emitting semiconductor die 10 and allows encapsulation in a substantially sealed state against ambient oxygen or moisture. Alternatively, in the device structure, the transparent barrier layer 50 extends laterally to cover the moisture barrier reflective structure 60, so that the permeation of oxygen and moisture from the upper surface can be reduced.

Desirably, the moisture barrier reflective structure 60 includes, for example, a fourth polymer matrix material 61 with a low WVTR that does not exceed ^{about 10 g / m 2 / day measured at a layer thickness of 2 mm.} An example of the fourth polymer matrix material 61 includes, but is not limited to, a resin material such as a silicone material. The resin or silicone material may have a higher concentration of certain functional groups, such as a phenyl group, to reduce its WVTR.

The moisture barrier reflective structure 60 may further contain light scattering particles (not shown) dispersed in the fourth polymer matrix material 61. Desirably, the weight percentage of the light scattering particles to the total weight of the moisture barrier reflective structure 60 is at least about 10%. Therefore, the moisture barrier reflective structure 60 functions as a reflector to reflect the light passing through the inner reflective structure 30 and reduce the possibility of blue light leaking from the four peripheral edge surfaces of the LED element 3. You may let me. Further, the moisture barrier structure 60 may further reduce its WVTR by including light scattering particles inside, and may realize improvement of oxygen and moisture barrier characteristics.

On the other hand, the reflection structure 30 is configured to reflect at least most of the primary light (particularly blue light or UV light) emitted from the light emitting semiconductor die 10 and the secondary light emitted from the PL structure 20. Will be done. Therefore, the intensity of light leakage generated in the outer moisture barrier reflective structure 60 after the light penetrates the inner reflective structure 30 is significantly reduced. Therefore, the material deterioration of the moisture barrier reflective structure 60 due to the irradiation of blue light or UV light is less serious, although the thermal stability of the material may be slightly reduced. In addition, since the moisture barrier reflective structure 60 does not come into direct contact with the heat source of the light emitting semiconductor die 10 at the position where the reflective structure 30 is sandwiched, the influence of heat is small, and the material deterioration due to heat is not so serious. Absent. Therefore, material deterioration due to heat is not so serious. In order to prevent or reduce material deterioration of the reflective structure 30 due to heat or radiation from blue or UV light, the third polymer matrix material 31 of the reflective structure 30 is made of the following material, namely blue light or UV. It can be composed of a resin or silicone material having higher thermal stability and higher resistance under light irradiation, such as a methyl group silicone material.

Regarding the manufacturing method of the LED3, the moisture barrier reflective structure 60 can be manufactured by using, for example, a manufacturing method similar to dispensing, printing, or molding. An example of the manufacturing method is shown below. First, the reflective structure 30 of the LED 3 is formed in the same manner as the method for producing the reflective structure 30 of the LED 1 described so far. Next, the moisture barrier reflective structure 60 is formed by arranging the slurry material of the moisture barrier reflective structure 60 surrounding the reflective structure 30 by a dispensing, printing or molding method. Next, a curing method is performed to complete the manufacturing procedure. Further, the transparent barrier layer 50 is arranged on the PL structure 20 before or after the formation of the moisture barrier reflective structure 60, and the above-described embodiment of the LED 3 featuring the moisture barrier reflective structure 60 and the transparent barrier layer 50 is manufactured. The law can be terminated.

In summary, the LED 3 embodied in the moisture barrier reflective structure 60 and the reflective structure 30 is more suitable for high power applications and it is desirable to use the moisture sensitive PL material 222.

The LEDs 1 to 3 disclosed in accordance with the present disclosure can effectively improve the oxygen or moisture barrier characteristics of the CSP type LED. However, these devices are characterized by being top-emitting, i.e., emitting light primarily from or only from the top of the CSP-type LED device, making them more suitable for applications with small viewing angles. .. A multilayer photoluminescent structure having good oxygen and moisture barrier properties according to the present disclosure is included in a five-sided light emitting CSP type LED element, that is, light is emitted from the upper surface of the CSP type LED element and four peripheral edges. LED. Therefore, a 5-sided light emitting CSP type LED element containing a moisture-sensitive PL material can be used for applications with a large viewing angle.

4A-4D are schematic cross-sectional views showing the LED 4 according to some embodiments of the present disclosure. As shown in FIG. 4A, the LED 4 includes a light emitting semiconductor die 10, a PL structure 20'and an encapsulating structure 70, where the PL structure 20'is the PL structure 20 in the above embodiment (eg, the PL shown in FIG. 1A). The shape is different from that of the structure 20). From a geometric point of view, the PL structure 20 is a substantially flat layer adjacent to cover the upper surface 11 of the light emitting semiconductor die 10, whereas the PL structure 20'is the upper surface of the light emitting semiconductor die 10. In addition to 11, the edge surface 13 is conformally covered and adjacent.

Specifically, the PL structure 20'includes an upper portion 201', an edge portion 202' and an extension portion 203'. The upper portion 201'is arranged so as to cover the upper surface 11 of the light emitting semiconductor die 10, and the edge portion 202'is connected to the upper portion 201' that extends downward so as to cover the edge surface 13 of the light emitting semiconductor die 10. The lower surface of the edge portion 202'may have the same height as the lower surface 12 of the light emitting semiconductor die 10. The extension 203'is connected to the edge 202' and extends laterally away from the edge 202'. The multilayer PL structure 20'includes a second PL layer 22 and a first PL layer 21 arranged on the second PL layer 22. Therefore, the upper portion 201', the edge portion 202', and the extension portion 203'include both the first PL layer 21 and the second PL layer 22.

The transparent encapsulation structure 70 is arranged on the PL structure 20'and covers the upper surface 201 of the upper portion 201', the edge surface of the edge portion 202', and the upper surface of the extension portion 203'. The edge surface of the transparent encapsulation structure 70 may be vertically aligned with the edge surface 203 of the extension portion 203'. In another embodiment (not shown), the transparent encapsulation structure 70 may also cover the edge surface 203 of the extension 203'to further seal the PL structure 20'. The transparent encapsulation structure 70 preferably comprises a substantially transparent polymeric material 71 with a low WVTR to block the ingress and penetration of ambient oxygen and moisture.

As shown in FIG. 4B, the multilayer PL structure 20'further further includes a third photoluminescence layer 23 arranged below the first PL layer 21 and the second PL layer 22 on the light emitting semiconductor die 10. (Hereinafter, abbreviated as the third PL layer 23) may be included. In other words, the second PL layer 22 containing the oxygen or humidity sensitive photoluminescence material 222 is sandwiched between the first PL layer 21 and the third PL layer 23. The third PL layer 23 is abbreviated as a third photoluminescence material (for example, low humidity photoluminescence material) 232 (hereinafter, abbreviated as low humidity sensitive PL material 232) dispersed in the fifth polymer matrix material 231. )including. For the technical specifications of each component, refer to the specifications of the first polymer matrix material 211 and the low humidity-sensitive PL material 212 of the first PL layer 21 described so far.

Therefore, the light emitted from the light emitting semiconductor die 10 and the PL structure 20'can be radiated outward from the upper surface and the four edge surfaces of the LED 4. That is, the LED 4 is characterized as a 5-surface emitting CSP type LED. Therefore, the LED 4 can have a larger viewing angle. In addition, the first PL layer 21, the third PL layer 23 and the transparent encapsulation structure 70 are configured to have a low WVTR so as to reach the second PL layer 22 containing the moisture sensitive PL material 222. Reduces the ingress and penetration of oxygen or moisture.

Although the second PL layer 22 containing the moisture sensitive PL material 222 is well protected, there may still be the possibility of oxygen or moisture invading, especially from the edge 203 of the LED 4. In order to deal with such a possibility, another embodiment of the five-sided light emitting CSP type LED element will be illustrated as shown in FIG. 4C. Similar to the PL structure 20 of the LED 1 shown in FIG. 1C, the first PL layer 21 and the second PL layer 22 of the PL structure 20'in the LED 4 are configured to have different covering areas. .. Specifically, as can be seen from the top view, the first PL layer 21 arranged on the second PL layer 22 has a larger covering region, so that the second PL layer 22 contains the moisture sensitive PL material 222. Is substantially completely encapsulated. Desirably, the extension portion 213 of the first PL layer 21 is configured to extend outwardly and substantially completely cover the edge surface 225 of the extension portion 223 of the second PL layer 22. Due to this arrangement configuration, the first PL layer 21 comprising the photoluminescence material 212 having low oxygen and humidity sensitivity becomes the second PL layer 22 containing the photoluminescence material 222 having high oxygen and humidity sensitivity. In particular, oxygen or moisture penetrating from the outer edge direction can be further minimized.

As shown in FIG. 4D, the LED 4 may further include a first PL layer 21 on the light emitting semiconductor die 10 and a third PL layer 23 arranged below the second PL layer 22. That is, the second PL layer 22 is sandwiched between the first PL layer 21 and the third PL layer 23. The second PL layer 22 is configured to have a small covering region and is encapsulated in the first PL layer 21 and the third PL layer 23. This further improves the oxygen and moisture barrier properties.

As for the manufacturing procedure for manufacturing the LED 4, as an example, the multilayer PL structure 20'is formed on the light emitting semiconductor die 10 by the method disclosed in US Patent Publication No. US2010 / 0119839. More specifically, the third PL layer 23, the second PL layer 22, and the first PL layer 21 are arranged in this order. Next, the manufacturing process of the LED 4 is completed by forming the transparent sealed structure 70 on the PL structure 20'by a dispensing, printing or molding method. Further, when selective deposition of the first PL layer 21, the second PL layer 22 or the third PL layer 23 is specified, shadow masks of different pore diameters are used to accommodate different sizes of coverage. A PL layer can be produced. For the selective deposition method of the PL layer using the shadow mask, refer to the technical description described in FIGS. 1E, 1F and the corresponding paragraphs.

The multilayer photoluminescent structure having good oxygen and moisture barrier properties according to the present disclosure can also be used in an embodiment of a lead frame type LED device containing a moisture sensitive PL material. 5A and 5B are schematic cross-sectional views showing the LED 5 according to some embodiments of the present disclosure. As shown in FIG. 5A, the LED 5 includes a light emitting semiconductor die 10', a package structure 80 and a PL structure 20. The light emitting semiconductor die 10'may be a flip chip type light emitting semiconductor die, a vertical light emitting semiconductor die, or a horizontal (face-up) type light emitting semiconductor die.

The package structure 80 includes a lead frame 81 and a reflector 82. The lead frame 81 including the first electrode 811 and the second electrode 812 that are electrically isolated from each other is formed by a punching method. The reflector 82 is arranged or formed on the lead frame 81. At least a part of the first electrode 811 and the second electrode 812 is exposed and electrically connected to the electrode 14 of the light emitting semiconductor die 10'. The exposed regions of the first electrode 811 and the second electrode 812 may be used as bonding pads for wire bonding, or another type of electrical connection or the like.

Desirably, the reflector 82 is arranged on the lead frame 81 to form the reflected light cavity 821. The material composition of the reflector 82 may be the same as or similar to the composition of the reflective structure 30 shown in FIG. 1A, and may be, for example, light scattering particles dispersed in a polymer material. Therefore, the WVTR of the reflector 82 may also be low. Examples of materials used to form the reflector 82 include polyphthalamide (PPA), polycyclohexylene-di-methylene terephthalate (PCT), epoxy molding compound (EMC), or silicone molding compound (SMC). , Not limited to this.

The light emitting semiconductor die 10'is arranged in the optical cavity 821 and is electrically connected to the first electrode 811 and the second electrode 812. Since the PL structure 20 is arranged in the optical cavity 821, the PL structure 20 covers the light emitting semiconductor die 10'. Therefore, the primary light emitted from the light emitting semiconductor die 10'and the secondary light converted by the PL structure 20 can be radiated exclusively or mainly from the upper surface 201 to the outside. According to some embodiments shown in FIG. 5A, the PL structure 20 comprises a substantially transparent polymer material 83 disposed between the light emitting semiconductor die 10'in the package structure 80 and the PL structure 20. By including, it is arranged away from the light emitting semiconductor die 10'. Thus, the extra space on the top surface 11 of the light emitting semiconductor die 10'allows the light emitting semiconductor die 10'to be electrically connected to the electrodes 811 and 812 of the lead frame 81 through feasible wire bonding.

An example of the manufacturing process for the manufacturing method for manufacturing the LED element 5 is shown below. First, the light emitting semiconductor die 10'is mechanically bonded to the lead frame 81 and electrically connected to the electrodes 811 and 812. Next, the PL structure 20 is preferably formed by the method disclosed in US Patent Publication No. US2010 / 0119839 and placed on the light emitting semiconductor die 10', and the lower surface 202 of the PL structure 20 is formed on the light emitting semiconductor die. Adjacent to the upper surface 11 of 10'. Alternatively, in order to create the LED 5 according to another embodiment, a substantially transparent polymer material 83 may be disposed, a spacer may be provided above the light emitting semiconductor die 10', and then the PL structure 20 may be attached. it can.

On the other hand, according to the relatively moisture-resistant lead frame type LED element, a silicone coating layer is arranged so as to cover the upper surface of the lead frame type LED to minimize the penetration of ambient moisture, thereby causing moisture-sensitive photoluminescence. Prevent material deterioration. However, the LED 5 according to the embodiment described in the present disclosure uses the first PL layer 21 containing the low humidity PL material 212 dispersed in the first polymer matrix material 211 instead of the silicone coating layer. It is composed. With this arrangement configuration, the moisture barrier layer becomes a first PL layer 21 that better protects the second PL layer 22 containing the moisture sensitive PL material 222. Thus, in the embodiment described in LED5, the moisture barrier layer does not have to be a fairly thick silicone coating layer that inevitably increases the overall form factor. More compact LEDs are more preferred in applications such as electrical appliances that require a thin and compact form factor.

As shown in FIG. 5B, the LED 5 can also further include a transparent barrier layer 50 disposed on the PL structure 20. More specifically, the transparent barrier layer 50 may further cover the upper surface of the reflector 82. In addition, the getter material 242 can also be included in the PL structure 20 (eg, in the getter layer 24) and / or in the transparent polymeric material 83.

In summary, LEDs according to the embodiments of the present disclosure include various moisture resistant structures that improve oxygen and moisture barrier properties. For example, various embodiments of moisture resistant structures, including multilayer PL structures, reflective structures, transparent barrier layers, moisture barrier reflective structures, getter layers, package structures, etc., significantly increase the overall form factor of the LED. It is configured to prevent or reduce oxygen and moisture from reaching the moisture sensitive PL material without increasing.

Although the above disclosure has been described with reference to a specific embodiment, those skilled in the art can make various changes without departing from the true purpose and scope of the disclosure specified in the appended claims. It will be understood that there is, and it can be replaced with a similar form. In addition, various improvements may be made to suit a particular situation, material, object composition, method, or process for the purpose, purpose and scope of the disclosure. All such improvements are intended to be made within the appended claims. In detail, the methods disclosed in the present application have been described with reference to specific operations performed in a specific order, but the present disclosure can be made by combining, subdividing, or rearranging the order of these operations. It should be understood that similar methods may be constructed without departing from the teachings. Therefore, unless otherwise specified herein, the order and grouping of actions does not limit this disclosure.

Claims (34)

A light emitting semiconductor die containing a top surface, an edge surface, a bottom surface, and a set of electrodes arranged adjacent to the bottom surface.
A photoluminescence structure comprising a second photoluminescence layer arranged on the light emitting semiconductor die and a first photoluminescence layer arranged on the second photoluminescence layer, said to be the first. The photoluminescence layer 1 contains a first polymer matrix material and a first photoluminescence material dispersed in the first polymer matrix material, and the second photoluminescence layer is a second. The first photoluminescent material is different from the second photoluminescent material and further comprises a polymer matrix material and a second photoluminescent material dispersed within the second polymer matrix material. ,
It comprises a reflective structure covering at least the edge surface of the light emitting semiconductor die, the reflective structure comprising a third polymer matrix material and light scattering particles dispersed within the third polymer matrix material. Light emitting element. The light emitting device according to claim 1, wherein the weight percentage of the first photoluminescent material with respect to the first photoluminescent layer is at least 50%. The light emitting device according to claim 1, wherein the first photoluminescence material has a medium particle size of less than 30 μm. The light emitting device according to claim 1, wherein the weight percentage of the light scattering particles with respect to the reflective structure is at least 30%. The first aspect of the present invention, wherein the water vapor permeation rate measured at a layer thickness of 2 mm for each of the first polymer matrix material and the third polymer matrix material is ^{less than 10 g / m 2} / day. Light emitting element. The first photoluminescence material comprises an inorganic phosphor material, and the second photoluminescence material comprises a phosphor material activated by a reactive metal or a semiconductor nanocrystal material. The light emitting element according to 1. The first photoluminescence material comprises an oxynitride phosphor material and
The light emitting device according to claim 1, wherein the second photoluminescence material contains a fluoride phosphor material activated by manganese. The first aspect of the present invention is characterized in that the surface area of the first photoluminescent layer is larger than the surface area of the second photoluminescent layer, and the first photoluminescent layer further covers the reflective structure. The light emitting element described. The second photoluminescent layer further comprises a central portion and an extension surrounding the central portion, whereby the second photoluminescent material is selectively contained in the central portion in a state separated from the extension portion. The light emitting element according to claim 1, wherein the light emitting element is included in the above. The light emitting device according to any one of claims 1 to 9, further comprising a moisture barrier layer arranged on the photoluminescence structure. The light emitting device according to claim 10, wherein the moisture barrier layer is a substantially transparent inorganic layer or a substantially transparent polymer layer. The light emitting element according to claim 10, wherein the moisture barrier layer covers the reflective structure. 1. The photoluminescence structure further includes a substantially transparent getter layer arranged between the first photoluminescence layer and the second photoluminescence layer. The light emitting element according to any one of 9 to 9. At least one of the first photoluminescence layer or the second photoluminescence layer further comprises a getter material dispersed within the first polymer matrix material or the second polymer matrix material. The light emitting element according to any one of claims 1 to 9. The light emitting device according to any one of claims 1 to 9, wherein the reflective structure further contains a getter material dispersed in the third polymer matrix material. The light emitting element further includes a moisture barrier reflective structure that surrounds and covers the reflective structure, which has a water vapor permeation rate of less than ^{10 g / m 2 / day measured at a layer thickness of 2 mm.} The light emitting element according to any one of claims 1 to 12, further comprising a fourth polymer matrix material. The moisture barrier reflective structure further comprises light scattering particles dispersed within the fourth polymer matrix material, characterized in that the scattered particles have a weight percentage of at least 10% with respect to the moisture barrier reflective structure. The light emitting element according to claim 16. The light emitting element according to any one of claims 1 to 17, wherein the light emitting element further includes a substrate, and the light emitting semiconductor die and the reflective structure are arranged on the substrate. A light emitting semiconductor die containing a top surface, an edge surface, a bottom surface, and a set of electrodes arranged adjacent to the bottom surface.
The photoluminescent structure includes a photoluminescent structure arranged on the light emitting semiconductor die, and the photoluminescent structure is a second photoluminescent layer and a first photoluminescent layer arranged on the second photoluminescent layer. The first photoluminescence layer and the second photoluminescence layer include an upper portion covering the upper surface of the light emitting semiconductor die and the upper portion connected to the upper surface of the light emitting semiconductor die, respectively. Includes an edge covering the edge surface of the luminescent portion and an extension portion extending outward from the edge portion, and further
In a light emitting device including an encapsulating structure arranged on the photoluminescence structure.
The first photoluminescence layer contains a first polymer matrix material and a first photoluminescence material dispersed in the first polymer matrix material, and the second photoluminescence layer comprises. The first photoluminescent material is different from the second photoluminescent material, comprising a second polymer matrix material and a second photoluminescent material dispersed within the second polymer matrix material. A light emitting element, wherein the encapsulated structure contains a substantially transparent polymer material. The light emitting device according to claim 19, wherein the extension portion of the second photoluminescence layer includes an edge surface covered and enclosed by the first photoluminescence layer. The photoluminescence structure further comprises a third photoluminescence layer, the third photoluminescence layer being dispersed in a fifth polymer matrix material and a third polymer matrix material. The third photoluminescent material is different from the second photoluminescent material, and the second photoluminescent layer is the first photoluminescent layer and the first photoluminescent layer. The light emitting element according to claim 19, wherein the light emitting element is arranged between the photoluminescence layer and the photoluminescence layer. The light emitting device according to claim 21, wherein the extension portion of the second photoluminescence layer includes an edge surface covered and enclosed by the first photoluminescence layer. The weight percentage of the first photoluminescent material to the first photoluminescent layer, or the weight percentage of the third photoluminescent material to the third photoluminescent layer shall be at least 50%. 21. The light emitting element according to claim 21. The light emitting device according to claim 19, wherein the first photoluminescence material has a medium particle size of less than 30 μm. The light emission according to claim 19, wherein the water vapor permeation rate measured at a layer thickness of 2 mm of the substantially transparent polymer material contained in the enclosed structure is ^{less than 10 g / m 2 / day.} element. The light emitting element according to any one of claims 19 to 25, wherein the light emitting element further includes a substrate, and the light emitting semiconductor die and the photoluminescence structure are arranged on the substrate. Light emitting semiconductor die and
Including a package structure including a lead frame, the lead frame includes a first electrode and a second electrode, and a reflector arranged on the lead frame, the first electrode and the second electrode. The electrodes are partially exposed for electrical connection, the lead frame and the reflector form an optical cavity, and further.
Photoluminescence including a second photoluminescence layer and a first photoluminescence layer arranged on the second photoluminescence layer, which is arranged in the optical cavity to cover the light emitting semiconductor die. The first photoluminescence layer, which comprises a structure, comprises a first polymer matrix material and a first photoluminescence material dispersed within the first polymer matrix material, said second photo. The luminescence layer is a light emitting element containing a second polymer matrix material and a second photoluminescent material dispersed in the second polymer matrix material.
The light emitting semiconductor die is arranged in the optical cavity of the package structure, mechanically bonded, and electrically connected to the first electrode and the second electrode of the lead frame. A characteristic light emitting element. The light emitting device according to claim 27, wherein the weight percentage of the first photoluminescent material with respect to the first photoluminescent layer is at least 50%. The light emitting device according to claim 27, wherein the first photoluminescence material has a medium particle size of less than 30 μm. The package structure further comprises a substantially transparent polymer material disposed between the light emitting semiconductor die and the photoluminescence structure to form a spacer, whereby the photoluminescence structure is formed. The light emitting element according to claim 27, wherein the light emitting semiconductor die does not come into direct contact with the light emitting semiconductor die. 28. The light emitting device according to claim 27, further comprising a substantially transparent moisture barrier layer arranged on the photoluminescent structure. The light emitting device according to any one of claims 27 to 31, wherein at least one of the photoluminescence structure or the package structure further contains a getter material. A light emitting semiconductor die containing a top surface, an edge surface, a bottom surface, and a set of electrodes arranged adjacent to the bottom surface.
A first photoluminescence layer and a second photoluminescence layer arranged on the light emitting semiconductor die, including an upper surface, an edge surface, and a lower surface, and further arranged on the first photoluminescence layer. The first photoluminescent layer comprises a first polymer matrix material and a lower moisture sensitive photoluminescent material dispersed within the first polymer matrix material, including a photoluminescent structure that also contains. The second photoluminescent layer comprises a second polymer matrix material and a moisture sensitive photoluminescent material dispersed within the second polymer matrix material, further comprising.
Includes a reflective structure that surrounds and covers the edge of the light emitting semiconductor die and the edge of the photoluminescence structure, the reflective structure being a third polymer matrix material and the third polymer matrix. Contains light-scattering particles dispersed in the material, and further
A light emitting device comprising a substantially transparent moisture barrier layer arranged to cover the photoluminescent structure. The surface area of the first photoluminescence layer is larger than the surface area of the second photoluminescence layer, and the second photoluminescence layer is covered and enclosed by the first photoluminescence layer. 33. The light emitting element according to claim 33, which includes a lower surface and an edge surface.

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