JP2021044372A - 熱処理方法および熱処理装置 - Google Patents
熱処理方法および熱処理装置 Download PDFInfo
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- JP2021044372A JP2021044372A JP2019165294A JP2019165294A JP2021044372A JP 2021044372 A JP2021044372 A JP 2021044372A JP 2019165294 A JP2019165294 A JP 2019165294A JP 2019165294 A JP2019165294 A JP 2019165294A JP 2021044372 A JP2021044372 A JP 2021044372A
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 136
- 238000000034 method Methods 0.000 title claims abstract description 30
- 239000007789 gas Substances 0.000 claims abstract description 105
- 239000000112 cooling gas Substances 0.000 claims abstract description 52
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 31
- 238000001816 cooling Methods 0.000 claims abstract description 22
- 239000001307 helium Substances 0.000 claims abstract description 18
- 229910052734 helium Inorganic materials 0.000 claims abstract description 18
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 61
- 230000001678 irradiating effect Effects 0.000 claims description 17
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 abstract description 124
- 229910052736 halogen Inorganic materials 0.000 abstract description 71
- 150000002367 halogens Chemical class 0.000 abstract description 71
- 235000012431 wafers Nutrition 0.000 description 120
- 230000007246 mechanism Effects 0.000 description 34
- 239000010453 quartz Substances 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- 230000005855 radiation Effects 0.000 description 16
- 239000012535 impurity Substances 0.000 description 14
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 12
- 229910052724 xenon Inorganic materials 0.000 description 11
- 229910001873 dinitrogen Inorganic materials 0.000 description 10
- 230000002093 peripheral effect Effects 0.000 description 10
- 230000004913 activation Effects 0.000 description 7
- 238000000137 annealing Methods 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 239000012298 atmosphere Substances 0.000 description 4
- 230000003028 elevating effect Effects 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000002845 discoloration Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 1
- 229910001632 barium fluoride Inorganic materials 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
3 制御部
4 ハロゲン加熱部
5 フラッシュ加熱部
6 チャンバー
7 保持部
10 移載機構
65 熱処理空間
74 サセプタ
75 保持プレート
77 基板支持ピン
81 ガス吐出口
86 ガス排気孔
90 ガスリング
FL フラッシュランプ
HL ハロゲンランプ
W 半導体ウェハー
Claims (10)
- 基板にフラッシュ光を照射することによって該基板を加熱する熱処理方法であって、
基板をチャンバー内に収容する収容工程と、
前記チャンバー内に収容された前記基板に連続点灯ランプから光を照射して前記基板を予備加熱する予備加熱工程と、
前記チャンバー内に収容された前記基板にフラッシュランプからフラッシュ光を照射して前記基板を加熱するフラッシュ加熱工程と、
前記チャンバー内に窒素よりも高い熱伝導率を有する冷却ガスを供給する冷却工程と、
を備えることを特徴とする熱処理方法。 - 請求項1記載の熱処理方法において、
前記冷却ガスは、水素またはヘリウムであることを特徴とする熱処理方法。 - 請求項1または請求項2記載の熱処理方法において、
前記基板に前記フラッシュ光を照射した時点以降に前記冷却ガスの供給を開始することを特徴とする熱処理方法。 - 請求項3記載の熱処理方法において、
前記連続点灯ランプを消灯したときに前記冷却ガスの供給を開始することを特徴とする熱処理方法。 - 請求項1から請求項4のいずれかに記載の熱処理方法において、
前記チャンバー内が所定温度にまで降温したときに前記冷却ガスの供給を停止することを特徴とする熱処理方法。 - 基板にフラッシュ光を照射することによって該基板を加熱する熱処理装置であって、
基板を収容するチャンバーと、
前記チャンバー内に収容された前記基板に光を照射して前記基板を予備加熱する連続点灯ランプと、
前記チャンバー内に収容された前記基板にフラッシュ光を照射して前記基板を加熱するフラッシュランプと、
前記チャンバー内に窒素よりも高い熱伝導率を有する冷却ガスを供給するガス供給部と、
を備えることを特徴とする熱処理装置。 - 請求項6記載の熱処理装置において、
前記冷却ガスは、水素またはヘリウムであることを特徴とする熱処理装置。 - 請求項6または請求項7記載の熱処理装置において、
前記ガス供給部は、前記基板に前記フラッシュ光が照射された時点以降に前記冷却ガスの供給を開始することを特徴とする熱処理装置。 - 請求項8記載の熱処理装置において、
前記ガス供給部は、前記連続点灯ランプが消灯したときに前記冷却ガスの供給を開始することを特徴とする熱処理装置。 - 請求項6から請求項9のいずれかに記載の熱処理装置において、
前記ガス供給部は、前記チャンバー内が所定温度にまで降温したときに前記冷却ガスの供給を停止することを特徴とする熱処理装置。
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JP2019165294A JP7377653B2 (ja) | 2019-09-11 | 2019-09-11 | 熱処理方法および熱処理装置 |
TW109127306A TWI761908B (zh) | 2019-09-11 | 2020-08-12 | 熱處理方法及熱處理裝置 |
PCT/JP2020/031834 WO2021049283A1 (ja) | 2019-09-11 | 2020-08-24 | 熱処理方法および熱処理装置 |
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JP2021044372A true JP2021044372A (ja) | 2021-03-18 |
JP7377653B2 JP7377653B2 (ja) | 2023-11-10 |
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JP (1) | JP7377653B2 (ja) |
TW (1) | TWI761908B (ja) |
WO (1) | WO2021049283A1 (ja) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05275433A (ja) * | 1992-03-27 | 1993-10-22 | Rohm Co Ltd | 半導体装置の製法 |
JP2003045817A (ja) * | 2001-07-27 | 2003-02-14 | Dainippon Screen Mfg Co Ltd | 基板の熱処理装置 |
JP2010114207A (ja) * | 2008-11-05 | 2010-05-20 | Dainippon Screen Mfg Co Ltd | 熱処理装置 |
Family Cites Families (2)
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JP4481528B2 (ja) | 2001-06-22 | 2010-06-16 | 株式会社東芝 | 半導体製造装置及び半導体装置の製造方法 |
KR100439276B1 (ko) | 2003-11-24 | 2004-07-30 | 코닉 시스템 주식회사 | 급속열처리 장치 |
-
2019
- 2019-09-11 JP JP2019165294A patent/JP7377653B2/ja active Active
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2020
- 2020-08-12 TW TW109127306A patent/TWI761908B/zh active
- 2020-08-24 WO PCT/JP2020/031834 patent/WO2021049283A1/ja active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05275433A (ja) * | 1992-03-27 | 1993-10-22 | Rohm Co Ltd | 半導体装置の製法 |
JP2003045817A (ja) * | 2001-07-27 | 2003-02-14 | Dainippon Screen Mfg Co Ltd | 基板の熱処理装置 |
JP2010114207A (ja) * | 2008-11-05 | 2010-05-20 | Dainippon Screen Mfg Co Ltd | 熱処理装置 |
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TWI761908B (zh) | 2022-04-21 |
TW202113980A (zh) | 2021-04-01 |
JP7377653B2 (ja) | 2023-11-10 |
WO2021049283A1 (ja) | 2021-03-18 |
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