TWI761908B - 熱處理方法及熱處理裝置 - Google Patents

熱處理方法及熱處理裝置 Download PDF

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Publication number
TWI761908B
TWI761908B TW109127306A TW109127306A TWI761908B TW I761908 B TWI761908 B TW I761908B TW 109127306 A TW109127306 A TW 109127306A TW 109127306 A TW109127306 A TW 109127306A TW I761908 B TWI761908 B TW I761908B
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TW
Taiwan
Prior art keywords
chamber
gas
flash
heat treatment
semiconductor wafer
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Application number
TW109127306A
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English (en)
Chinese (zh)
Other versions
TW202113980A (zh
Inventor
上田晃頌
三宅浩志
小野行雄
Original Assignee
日商斯庫林集團股份有限公司
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Publication of TW202113980A publication Critical patent/TW202113980A/zh
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Publication of TWI761908B publication Critical patent/TWI761908B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW109127306A 2019-09-11 2020-08-12 熱處理方法及熱處理裝置 TWI761908B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-165294 2019-09-11
JP2019165294A JP7377653B2 (ja) 2019-09-11 2019-09-11 熱処理方法および熱処理装置

Publications (2)

Publication Number Publication Date
TW202113980A TW202113980A (zh) 2021-04-01
TWI761908B true TWI761908B (zh) 2022-04-21

Family

ID=74864268

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109127306A TWI761908B (zh) 2019-09-11 2020-08-12 熱處理方法及熱處理裝置

Country Status (3)

Country Link
JP (1) JP7377653B2 (ja)
TW (1) TWI761908B (ja)
WO (1) WO2021049283A1 (ja)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05275433A (ja) * 1992-03-27 1993-10-22 Rohm Co Ltd 半導体装置の製法
JP2003045817A (ja) * 2001-07-27 2003-02-14 Dainippon Screen Mfg Co Ltd 基板の熱処理装置
JP2010114207A (ja) * 2008-11-05 2010-05-20 Dainippon Screen Mfg Co Ltd 熱処理装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4481528B2 (ja) 2001-06-22 2010-06-16 株式会社東芝 半導体製造装置及び半導体装置の製造方法
KR100439276B1 (ko) 2003-11-24 2004-07-30 코닉 시스템 주식회사 급속열처리 장치

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05275433A (ja) * 1992-03-27 1993-10-22 Rohm Co Ltd 半導体装置の製法
JP2003045817A (ja) * 2001-07-27 2003-02-14 Dainippon Screen Mfg Co Ltd 基板の熱処理装置
JP2010114207A (ja) * 2008-11-05 2010-05-20 Dainippon Screen Mfg Co Ltd 熱処理装置

Also Published As

Publication number Publication date
JP2021044372A (ja) 2021-03-18
WO2021049283A1 (ja) 2021-03-18
TW202113980A (zh) 2021-04-01
JP7377653B2 (ja) 2023-11-10

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