JP2021031347A - 誘電体組成物および電子部品 - Google Patents
誘電体組成物および電子部品 Download PDFInfo
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- JP2021031347A JP2021031347A JP2019154785A JP2019154785A JP2021031347A JP 2021031347 A JP2021031347 A JP 2021031347A JP 2019154785 A JP2019154785 A JP 2019154785A JP 2019154785 A JP2019154785 A JP 2019154785A JP 2021031347 A JP2021031347 A JP 2021031347A
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- dielectric composition
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- oxide particles
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- 239000000203 mixture Substances 0.000 title claims abstract description 127
- 239000010955 niobium Substances 0.000 claims abstract description 63
- 239000002131 composite material Substances 0.000 claims abstract description 59
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- 238000005204 segregation Methods 0.000 claims abstract description 34
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 32
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 24
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 23
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 12
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- 239000013078 crystal Substances 0.000 claims description 22
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 11
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 11
- 230000001747 exhibiting effect Effects 0.000 abstract description 4
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- 238000002474 experimental method Methods 0.000 description 21
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- 229910052788 barium Inorganic materials 0.000 description 9
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- 238000002441 X-ray diffraction Methods 0.000 description 4
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- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical group [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 4
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 description 4
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
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- 150000004679 hydroxides Chemical class 0.000 description 1
- BDAGIHXWWSANSR-NJFSPNSNSA-N hydroxyformaldehyde Chemical compound O[14CH]=O BDAGIHXWWSANSR-NJFSPNSNSA-N 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
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- 239000011812 mixed powder Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
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- 238000010405 reoxidation reaction Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910000018 strontium carbonate Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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Abstract
Description
(1.1.積層セラミックコンデンサ)
(1.1.1 積層セラミックコンデンサの全体構成)
本実施形態に係る電子部品の一例としての積層セラミックコンデンサ1が図1に示される。積層セラミックコンデンサ1は、誘電体層2と、内部電極層3と、が交互に積層された構成の素子本体10を有する。この素子本体10の両端部には、素子本体10の内部で交互に配置された内部電極層3と各々導通する一対の外部電極4が形成してある。素子本体10の形状に特に制限はないが、通常、直方体状とされる。また、素子本体10の寸法にも特に制限はなく、用途に応じて適当な寸法とすればよい。
誘電体層2は、後述する本実施形態に係る誘電体組成物から構成されている。
本実施形態では、内部電極層3は、各端部が素子本体10の対向する2端面の表面に交互に露出するように積層してある。
外部電極4に含有される導電材は特に限定されない。たとえばNi、Cu、Sn、Ag、Pd、Pt、Auあるいはこれらの合金、導電性樹脂等公知の導電材を用いればよい。外部電極4の厚さは用途等に応じて適宜決定すればよい。
図2に示すように、本実施形態に係る誘電体層2を構成する誘電体組成物は、(SrxBa1−x)yNb2O5+yで表される組成式を有する複合酸化物粒子14の間にAl系偏析相16を含む。本実施形態に係る誘電体組成物は必要に応じて、Cu、Zn、Pd、TaまたはSn等の元素を含有してもよい。
本実施形態の複合酸化物粒子14は(SrxBa1−x)yNb2O5+yで表される組成式を有し、上記の組成式中のxおよびyの範囲は特に限定されない。
図2に示すように、本実施形態に係る誘電体層2を構成する誘電体組成物は、上記の複合酸化物粒子14の間に、Al系偏析相16を含む。Al系偏析相16はニオブ(Nb)、アルミニウム(Al)および酸素(O)を有するAl系酸化物を含む。なお、Al系偏析相16は上記の元素以外の元素を含んでいてもよい。
次に、図1に示す積層セラミックコンデンサ1の製造方法の一例について以下に説明する。
本実施形態に係る積層セラミックコンデンサは、以下に示す点を除いて、第1実施形態に係る積層セラミックコンデンサと同様である。
上述した実施形態では、本発明に係る電子部品が積層セラミックコンデンサである場合について説明したが、本発明に係る電子部品は、積層セラミックコンデンサに限定されず、上述した誘電体組成物を有する電子部品であれば何でもよい。
誘電体組成物に含まれる複合酸化物粒子の出発原料として、炭酸バリウム(BaCO3)、炭酸ストロンチウム(SrCO3)および酸化ニオブ(Nb2O5)の粉末を準備した。焼成後の誘電体組成物に含まれる(SrxBa1−x)yNb2O5+yで表される組成式を有する複合酸化物粒子において、xおよびyが表1に記載の通りとなるように、準備した出発原料を秤量した。
X線(Cu−Kα線)回折装置:PANalytical製X‘Pert Pro
2θ/θ=16〜40deg
X線発生条件:45kV−40mA
スキャン幅:0.017°
スキャン速度:0.10°/s
X線検出条件:
入射側光学系
Niフィルター:10μm
ソーラースリット:0.04rad
発散スリット:1/2°
マスク:10mm
散乱防止スリット:1°
受入側光学系
散乱防止スリット:5.5mm
ソーラースリット:0.04rad
Niフィルター:20μm
Al系酸化物の添加量を変化させることによりAl系偏析相の面積比率を変化させた以外は実験1の試料番号3と同様にして誘電体組成物を得て、円盤状のセラミックコンデンサの試料を得た。Al系偏析相の面積比率の測定結果を表2に示す。また、実験1と同様にして、密度、3点曲げ強さ、比誘電率および抵抗率を求めた。結果を表2に示す。
複合酸化物粒子の組成式のxおよびyを表3に記載の通り変化させた以外は実験1の試料番号3と同様にして円盤状のセラミックコンデンサの試料を得た。また、実験1と同様にして、密度、3点曲げ強さ、比誘電率および抵抗率を測定した。結果を表3に示す。
Al系酸化物に替えてSi系酸化物を用いた以外は、実験1と同様にして、円盤状のセラミックコンデンサの試料を得て、密度、3点曲げ強度、比誘電率および抵抗率を測定した。結果を表4に示す。また、実験1の試料番号3と同様にして、試料番号49のX線回折を行った。結果を図4に示す。
Si系酸化物の添加量を変化させることによりSi系偏析相の面積比率を変化させた以外は実験4の試料番号49と同様にして誘電体組成物を得て、円盤状のセラミックコンデンサの試料を得た。Si系偏析相の面積比率の測定結果を表5に示す。また、実験1と同様にして、密度、3点曲げ強さ、比誘電率および抵抗率を求めた。結果を表5に示す。
Si系酸化物の仮焼き粉末の粉砕条件を変更することにより、Si系酸化物のアスペクト比を変化させた以外は実験4の試料番号49と同様にして円盤状のセラミックコンデンサの試料を得た。アスペクト比の測定結果を表6に示す。
複合酸化物粒子の組成式のxおよびyを表7に記載の通り変化させた以外は実験4の試料番号49と同様にして円盤状のセラミックコンデンサの試料を得た。また、実験1と同様にして、密度、3点曲げ強さ、比誘電率および抵抗率を測定した。結果を表7に示す。
添加物をAl系酸化物に替えて表8に記載の通りとした以外は、実験1と同様にして円盤状のセラミックコンデンサの試料を得て、密度、3点曲げ強度、比誘電率および抵抗率を測定した。結果を表8に示す。
10… 素子本体
2… 誘電体層
14… 複合酸化物粒子
16… Al系偏析相
26… Si系偏析相
3… 内部電極層
4… 外部電極
Claims (10)
- (SrxBa1−x)yNb2O5+yで表される組成式を有する複合酸化物粒子と、Al系偏析相と、を含む誘電体組成物であって、
前記Al系偏析相はニオブ、アルミニウムおよび酸素を有するAl系酸化物を含む誘電体組成物。 - 前記Al系酸化物では、Al/(Al+Nb)の式で表されるアルミニウムのモル比が0.43〜0.69である請求項1に記載の誘電体組成物。
- 前記Al系酸化物の結晶系は単斜晶である請求項1または2に記載の誘電体組成物。
- (前記Al系偏析相の面積/前記複合酸化物粒子の面積)×100[%]の式で表される前記Al系偏析相の面積比率が0.1〜10%である請求項1〜3のいずれかに記載の誘電体組成物。
- (SrxBa1−x)yNb2O5+yで表される組成式を有する複合酸化物粒子と、Si系偏析相と、を含む誘電体組成物であって、
前記Si系偏析相はニオブ、アルカリ土類金属およびケイ素を有するSi系酸化物を含む誘電体組成物。 - 前記Si系酸化物では、ニオブの含有量を6モル部としたとき、ケイ素の含有量は2.4〜4モル部であり、アルカリ土類金属の含有量は1.8〜6モル部である請求項5に記載の誘電体組成物。
- 前記Si系偏析相の断面におけるアスペクト比が2.0以上である請求項5または6に記載の誘電体組成物。
- 前記Si系酸化物の結晶系が六方晶である請求項5〜7のいずれかに記載の誘電体組成物。
- (前記Si系偏析相の面積/前記複合酸化物粒子の面積)×100[%]の式で表される前記Si系偏析相の面積比率が0.1〜10%である請求項5〜8のいずれかに記載の誘電体組成物。
- 請求項1〜9のいずれかに記載の誘電体組成物を含む誘電体層を備える電子部品。
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US6403053B1 (en) * | 1997-12-15 | 2002-06-11 | National Science Council | Preparation of translucent strontium barium niobate ceramics using reaction sintering |
JP2006202499A (ja) * | 2005-01-18 | 2006-08-03 | Dainippon Printing Co Ltd | エレクトロルミネセンス素子 |
JP2018020931A (ja) * | 2016-08-03 | 2018-02-08 | Tdk株式会社 | 誘電体組成物及び電子部品 |
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