JP2021028652A5 - - Google Patents

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JP2021028652A5
JP2021028652A5 JP2019147243A JP2019147243A JP2021028652A5 JP 2021028652 A5 JP2021028652 A5 JP 2021028652A5 JP 2019147243 A JP2019147243 A JP 2019147243A JP 2019147243 A JP2019147243 A JP 2019147243A JP 2021028652 A5 JP2021028652 A5 JP 2021028652A5
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Japan
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wafer
feature
parameter set
substrate
exposure
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JP2019147243A
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JP7329386B2 (ja
JP2021028652A (ja
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JP2019147243A 2019-08-09 2019-08-09 リソグラフィ処理される半導体デバイスのためのプロセス制御方法 Active JP7329386B2 (ja)

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JP2019147243A JP7329386B2 (ja) 2019-08-09 2019-08-09 リソグラフィ処理される半導体デバイスのためのプロセス制御方法

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JP2019147243A JP7329386B2 (ja) 2019-08-09 2019-08-09 リソグラフィ処理される半導体デバイスのためのプロセス制御方法

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JP2021028652A JP2021028652A (ja) 2021-02-25
JP2021028652A5 true JP2021028652A5 (enExample) 2022-08-15
JP7329386B2 JP7329386B2 (ja) 2023-08-18

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Publication number Priority date Publication date Assignee Title
CN112346296B (zh) * 2019-08-06 2025-07-22 科尼亚克有限公司 用于经光刻加工的半导体器件的工艺控制方法
US12094691B2 (en) * 2020-09-30 2024-09-17 Taiwan Semiconductor Manufacturing Co., Ltd. Etch apparatus for compensating shifted overlayers

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JP2007027573A (ja) * 2005-07-20 2007-02-01 Canon Inc 露光装置および露光方法ならびにこれらの露光装置または露光方法を用いたデバイス製造方法
KR101555709B1 (ko) * 2005-11-04 2015-09-25 가부시키가이샤 니콘 해석 장치, 처리 장치, 측정 장치, 노광 장치, 기판 처리시스템, 해석 방법 및 프로그램
US8175831B2 (en) * 2007-04-23 2012-05-08 Kla-Tencor Corp. Methods and systems for creating or performing a dynamic sampling scheme for a process during which measurements are performed on wafers
JP5237690B2 (ja) * 2008-05-16 2013-07-17 ルネサスエレクトロニクス株式会社 半導体デバイスの製造方法
NL2005997A (en) * 2010-02-19 2011-08-22 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
JP2014229675A (ja) * 2013-05-21 2014-12-08 ピーエスフォー ルクスコ エスエイアールエルPS4 Luxco S.a.r.l. 重ね合わせ補正システム
US10739685B2 (en) * 2018-02-14 2020-08-11 Qoniac Gmbh Process control method for lithographically processed semiconductor devices

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