JP2020535647A5 - - Google Patents

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Publication number
JP2020535647A5
JP2020535647A5 JP2020517136A JP2020517136A JP2020535647A5 JP 2020535647 A5 JP2020535647 A5 JP 2020535647A5 JP 2020517136 A JP2020517136 A JP 2020517136A JP 2020517136 A JP2020517136 A JP 2020517136A JP 2020535647 A5 JP2020535647 A5 JP 2020535647A5
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JP
Japan
Prior art keywords
bulk semiconductor
dielectric layer
semiconductor wafer
trench isolation
layer
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JP2020517136A
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English (en)
Japanese (ja)
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JP2020535647A (ja
JP7248660B2 (ja
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Priority claimed from US15/975,434 external-priority patent/US10559520B2/en
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Publication of JP2020535647A5 publication Critical patent/JP2020535647A5/ja
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Publication of JP7248660B2 publication Critical patent/JP7248660B2/ja
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JP2020517136A 2017-09-29 2018-08-27 裏面シリサイド化によるバルク層転写処理 Active JP7248660B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762565495P 2017-09-29 2017-09-29
US62/565,495 2017-09-29
US15/975,434 2018-05-09
US15/975,434 US10559520B2 (en) 2017-09-29 2018-05-09 Bulk layer transfer processing with backside silicidation
PCT/US2018/048125 WO2019067129A1 (en) 2017-09-29 2018-08-27 MASSIVE LAYER TRANSFER TREATMENT WITH SILICIURATION ON THE REAR PANEL

Publications (3)

Publication Number Publication Date
JP2020535647A JP2020535647A (ja) 2020-12-03
JP2020535647A5 true JP2020535647A5 (https=) 2021-09-24
JP7248660B2 JP7248660B2 (ja) 2023-03-29

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JP2020517136A Active JP7248660B2 (ja) 2017-09-29 2018-08-27 裏面シリサイド化によるバルク層転写処理

Country Status (6)

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US (1) US10559520B2 (https=)
EP (1) EP3688795B1 (https=)
JP (1) JP7248660B2 (https=)
KR (1) KR102675753B1 (https=)
CN (1) CN111133565B (https=)
WO (1) WO2019067129A1 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10199461B2 (en) * 2015-10-27 2019-02-05 Texas Instruments Incorporated Isolation of circuit elements using front side deep trench etch
US10615252B2 (en) * 2018-08-06 2020-04-07 Nxp Usa, Inc. Device isolation
CN115036325A (zh) * 2019-10-14 2022-09-09 长江存储科技有限责任公司 用于三维nand的位线驱动器的隔离的结构和方法
CN111052380B (zh) * 2019-11-28 2021-01-29 长江存储科技有限责任公司 局部字线驱动器件、存储器件及其制造方法
US11568052B2 (en) 2020-05-31 2023-01-31 Microsoft Technology Licensing, Llc Undetectable sandbox for malware
CN111883476B (zh) * 2020-09-18 2023-04-14 上海华虹宏力半导体制造有限公司 深沟槽隔离结构的形成方法及半导体器件的形成方法
US11721883B2 (en) * 2021-02-25 2023-08-08 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor package with antenna and method of forming the same
US12136627B2 (en) * 2021-06-24 2024-11-05 Taiwan Semiconductor Manufacturing Company, Ltd. 3DIC structure for high voltage device on a SOI substrate
CN114999998A (zh) * 2022-05-23 2022-09-02 长江存储科技有限责任公司 存储器件、制造存储器件的方法和包括其的存储器系统
US12575111B2 (en) * 2022-06-30 2026-03-10 Intel Corporation Back-end-of-line 2D memory cell
CN120565491B (zh) * 2025-07-31 2025-10-10 杭州富芯半导体有限公司 一种半导体结构、制备方法及半导体器件

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3681862D1 (de) * 1985-08-23 1991-11-14 Siemens Ag Verfahren zur herstellung einer hochsperrenden diodenanordnung auf der basis von a-si:h fuer bildsensorzeilen.
JP3587537B2 (ja) * 1992-12-09 2004-11-10 株式会社半導体エネルギー研究所 半導体装置
JP4289146B2 (ja) * 2003-03-27 2009-07-01 セイコーエプソン株式会社 三次元実装型半導体装置の製造方法
JP2006108520A (ja) * 2004-10-08 2006-04-20 Sharp Corp 半導体装置及び半導体装置の製造方法
JP2006278646A (ja) * 2005-03-29 2006-10-12 Sanyo Electric Co Ltd 半導体装置の製造方法
JP4869664B2 (ja) 2005-08-26 2012-02-08 本田技研工業株式会社 半導体装置の製造方法
US7285477B1 (en) 2006-05-16 2007-10-23 International Business Machines Corporation Dual wired integrated circuit chips
JP2007335642A (ja) * 2006-06-15 2007-12-27 Fujifilm Corp パッケージ基板
TWI382515B (zh) * 2008-10-20 2013-01-11 鈺程科技股份有限公司 無線收發模組
JP4945545B2 (ja) * 2008-11-10 2012-06-06 株式会社日立製作所 半導体装置の製造方法
US8299583B2 (en) 2009-03-05 2012-10-30 International Business Machines Corporation Two-sided semiconductor structure
US8455875B2 (en) * 2010-05-10 2013-06-04 International Business Machines Corporation Embedded DRAM for extremely thin semiconductor-on-insulator
US8492241B2 (en) * 2010-10-14 2013-07-23 International Business Machines Corporation Method for simultaneously forming a through silicon via and a deep trench structure
JP2014207252A (ja) * 2011-08-17 2014-10-30 株式会社村田製作所 半導体装置およびその製造方法ならびに携帯電話機
US8779559B2 (en) * 2012-02-27 2014-07-15 Qualcomm Incorporated Structure and method for strain-relieved TSV
US20130249011A1 (en) * 2012-03-22 2013-09-26 Texas Instruments Incorporated Integrated circuit (ic) having tsvs and stress compensating layer
US9219032B2 (en) * 2012-07-09 2015-12-22 Qualcomm Incorporated Integrating through substrate vias from wafer backside layers of integrated circuits
US9093462B2 (en) * 2013-05-06 2015-07-28 Qualcomm Incorporated Electrostatic discharge diode
CN104241279B (zh) * 2013-06-18 2017-09-01 中芯国际集成电路制造(上海)有限公司 一种集成电路及其制造方法
CN104241267B (zh) * 2013-06-18 2017-08-01 中芯国际集成电路制造(上海)有限公司 一种集成电路及其制造方法
JP2015050339A (ja) * 2013-09-02 2015-03-16 ソニー株式会社 半導体装置およびその製造方法
US9252077B2 (en) * 2013-09-25 2016-02-02 Intel Corporation Package vias for radio frequency antenna connections
EP2887387A1 (en) * 2013-12-20 2015-06-24 Nxp B.V. Semiconductor device and associated method
EP3373329B1 (en) * 2014-02-28 2023-04-05 LFoundry S.r.l. Integrated circuit comprising a laterally diffused mos field effect transistor
US9368479B2 (en) * 2014-03-07 2016-06-14 Invensas Corporation Thermal vias disposed in a substrate proximate to a well thereof
US9324632B2 (en) * 2014-05-28 2016-04-26 Globalfoundries Inc. Semiconductor structures with isolated ohmic trenches and stand-alone isolation trenches and related method
JP2015228473A (ja) * 2014-06-03 2015-12-17 パナソニックＩｐマネジメント株式会社 半導体装置およびその製造方法
KR102235613B1 (ko) * 2014-11-20 2021-04-02 삼성전자주식회사 Mos 커패시터를 구비하는 반도체 소자
US9673084B2 (en) * 2014-12-04 2017-06-06 Globalfoundries Singapore Pte. Ltd. Isolation scheme for high voltage device
US9570494B1 (en) * 2015-09-29 2017-02-14 Semiconductor Components Industries, Llc Method for forming a semiconductor image sensor device
US9755029B1 (en) 2016-06-22 2017-09-05 Qualcomm Incorporated Switch device performance improvement through multisided biased shielding
US20180138081A1 (en) * 2016-11-15 2018-05-17 Vanguard International Semiconductor Corporation Semiconductor structures and method for fabricating the same

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