JP2020531847A - 製造工程の監視のための水晶振動子マイクロバランスセンサ及びそれに関連する方法 - Google Patents
製造工程の監視のための水晶振動子マイクロバランスセンサ及びそれに関連する方法 Download PDFInfo
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- JP2020531847A JP2020531847A JP2020511512A JP2020511512A JP2020531847A JP 2020531847 A JP2020531847 A JP 2020531847A JP 2020511512 A JP2020511512 A JP 2020511512A JP 2020511512 A JP2020511512 A JP 2020511512A JP 2020531847 A JP2020531847 A JP 2020531847A
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- qcm sensor
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- G01N2291/0426—Bulk waves, e.g. quartz crystal microbalance, torsional waves
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Abstract
Description
a)前駆体枯渇
b)前駆体浪費
c)バルブ不全による前駆体フローの阻害または変動
d)ウェハ温度のコンシステンシー(temperature consistency);及び
e)不適切な堆積をもたらすウェハ自体、チャンバ、装備されたサブシステム、間違えたプロセスレシピ、または他の要因に影響される任意の他の要因の故の前駆体取り込みコンシステンシーを有利にもたらす。
QCMセンサは、漏洩を監視するために処理チャンバの中及びその周りの様々な場所に配され得る。これには、チャンバの壁における、チャンバから通じるポンプライン内において、過剰なプロセスガスが処理チャンバの周りに供給されることを許容するバイパスまたは迂回ラインを含むプロセスガス供給ラインにおける、チャンバまたは任意のサブシステムに取り付けられた弁体内における、及びバルブの開放及び閉鎖の故の断続的な暴露が1のチャンバから他のチャンバへの材料の移動をもたらし得る真空プレナム及びウェハ搬送チャンバのような隣接する真空チャンバ内における材料堆積を監視するための直接的なアクセスをもたらす場所を含む。
140mTの圧力かつ室温での酸素の取り込み量における金属薄膜のモフォロジーの効果は、異なったTi表面粗さを有する2つのグループのQCMを用いてテストされた。両方のグループは、直径が14mmで、最初の基本の周波数が6MHz前後であった。金属薄膜の厚さ及び蒸着レートは、金属薄膜の表面粗さが下にある基板の表面粗さと同等になることを保証するように選択された。研磨されていない基板及び研磨された基板で測定された平均表面粗さは、高さの2乗平均(mean root mean square height)が、それぞれSq≒0.285及びSq≒50Aであった。セット間の違いは、研磨された水晶及び研磨されなかった水晶の重宝の粗さの違いの故である。予期されるようにかつ図6に見られるように、研磨されていないQCMの質量増加は、研磨されているQCMの質量増加より大きい。粒子モフォロジーが表面粗さを支配しないことを保証するために、1.5A/sの上限レートが両方のタイプの水晶の全ての堆積の間に維持された。室温酸化動態は、両方の場合で同じであることが期待される。従って、さらに大きい増加は、研磨されていない水晶上の金属薄膜の凹部及び凸部の故の有効な大きい表面領域のためである。
Claims (22)
- 処理チャンバ及び複数のフローコンポーネントを含む製造システムにおける製造プロセスを監視する監視デバイスであって、
前記製造システムの前記複数のフローコンポーネントのうちの1つのフローコンポーネントを監視し、かつ前記製造プロセス中に前記1つのフローコンポーネント内のプロセス化学に暴露される水晶振動子マイクロバランス(QCM)センサと、
前記製造プロセス中の前記QCMセンサと前記1つのフローコンポーネント内の前記プロセス化学との相互作用による前記QCMセンサの共振周波数シフトを測定し、
前記1つのフローコンポーネント内の前記QCMセンサの当該測定された共振周波数シフトに応じて前記処理チャンバ内の製造プロセスのパラメータを決定するコントローラと、
を含むことを特徴とする監視デバイス。 - 請求項1に記載の監視デバイスであって、当該決定されたパラメータは、前記処理チャンバ内の空気漏洩、反応副生成物、消費されなかった前駆体または汚染物質のうちの1または複数を示すことを特徴とする監視デバイス。
- 請求項1に記載の監視デバイスであって、前記1つのフローコンポーネントは、ポンプライン、排気ライン、供給ライン、バイパスライン、弁体、真空プレナム、バイパスチャンバまたは搬送チャンバを含むことを特徴とする監視デバイス。
- 請求項1に記載の監視デバイスであって、QCMセンサ上に堆積されたゲッタ材をさらに含み、ゲッタ材の質量は、前記製造プロセス中の前記1つのフローコンポーネント内の前記プロセス化学との相互作用によって変化し、前記コントローラは、前記1つのフローコンポーネント内の前記ゲッタ材の質量の変化を示す前記QCMセンサの測定された共振周波数シフトに応じて前記処理チャンバ内の空気漏洩を判定することを特徴とする監視デバイス。
- 請求項4に記載の監視デバイスであって、前記コントローラは、前記製造システムから前記QCMセンサに製造化学を迂回させて、前記QCMセンサ上に特定の厚さのゲッタ材を堆積させることを特徴とする監視デバイス。
- 請求項4に記載の監視デバイスであって、前記ゲッタ材の上方に配された犠牲層をさらに含み、前記コントローラは、前記製造システムを用いて前記製造システム内への前記QCMセンサの設置の後に前記犠牲層を除去することを特徴とする監視デバイス。
- 請求項4に記載の監視デバイスであって、前記QCMセンサ上に材料を提供する特定のコンポーネントをさらに含み、前記コントローラは、前記特定のコンポーネントを用いて前記QCMセンサ上に特定の厚さで前記ゲッタ材を堆積させることを特徴とする監視デバイス。
- 請求項4に記載の監視デバイスであって、前記QCMセンサ上の材料を除去する特定のコンポーネントをさらに含み、前記コントローラは、前記特定のコンポーネントを用いて、前記製造システム内への前記QCMセンサの設置の後に前記犠牲層を除去することを特徴とする監視デバイス。
- 請求項4に記載の監視デバイスであって、前記QCMセンサを加熱する加熱デバイスをさらに含み、前記コントローラは、前記加熱デバイスを用いて前記QCMセンサの温度を前記QCMセンサの以前の温度を超えて上昇させて、前記ゲッタ材を再活性化することを特徴とする監視デバイス。
- 請求項1に記載の監視デバイスであって、前記製造プロセス中の前記1つのフローコンポーネント内の前記プロセス化学は、前記処理チャンバ内の前記製造プロセスの消費されなかった前駆体または反応副生成物、及び前記消費されなかった前駆体または反応副生成物による前記QCMセンサの質量の変化のうちの少なくとも1つを含み、前記コントローラは、前記QCMセンサの質量の変化を示す前記QCMセンサの測定された共振周波数シフトに応じた前記処理チャンバ内の前記製造プロセスの前記パラメータを決定することを特徴とする監視デバイス。
- 請求項10に記載の監視デバイスであって、前記製造プロセスは堆積プロセスを含み、前記パラメータは前記処理チャンバ内の堆積レートを含むことを特徴とする監視デバイス。
- 請求項10に記載の監視デバイスであって、前記製造プロセスは材料除去プロセスを含み、前記パラメータは前記処理チャンバ内の材料除去レートを含むことを特徴とする監視デバイス。
- 請求項1に記載の監視デバイスであって、前記QCMセンサの温度を調整して前記製造プロセス中の前記1つのフローコンポーネント内の前記プロセス化学との前記相互作用を促進する加熱デバイスをさらに含むことを特徴とする監視デバイス。
- 請求項13に記載の監視デバイスであって、前記QCMセンサの温度は、前記1つのフローコンポーネント内の前記プロセス化学によって前記QCMセンサ上への堆積が開始されるかまたは制御されるように選択されることを特徴とする監視デバイス。
- 請求項13に記載の監視デバイスであって、前記QCMセンサの温度は、前記1つのフローコンポーネント内の前記プロセス化学によって前記QCMセンサ上の材料の除去が開始されるかまたは制御されるように選択されることを特徴とする監視デバイス。
- 請求項1に記載の監視デバイスであって、前記製造プロセス中の前記1つのフローコンポーネント内の前記プロセス化学への前記QCMセンサの暴露を制限して、前記QCMセンサと前記プロセス化学との相互作用を減少させる装置をさらに含むことを特徴とする監視デバイス。
- 請求項16に記載の監視デバイスであって、前記プロセス化学への前記QCMセンサの暴露を制限する前記装置は、バルブまたはオリフィスを含むことを特徴とする監視デバイス。
- 請求項16に記載の監視デバイスであって、前記プロセス化学への前記QCMセンサの暴露を制限する前記装置は、前記プロセス化学を希薄化させるための希薄化ガスラインを含むことを特徴とする監視デバイス。
- 請求項1に記載の監視デバイスであって、前記コントローラは、前記製造システムの状態に応じて前記処理チャンバにおける製造プロセスの前記パラメータを決定することを特徴とする監視デバイス。
- 処理チャンバ並びに排気ラインまたは供給ラインを含む複数のフローコンポーネントを含む複数の製造システム内の製造プロセスを監視するための監視デバイスであって、
前記製造システムの前記複数のフローコンポーネントの前記排気ラインまたは前記供給ラインを監視し、前記製造プロセス中の前記排気ラインまたは前記供給ライン内のプロセス化学に暴露される水晶振動子マイクロバランス(QCM)センサと、
前記製造プロセス中の前記排気ラインまたは前記供給ライン内の前記QCMセンサと前記プロセス化学との相互作用による共振周波数シフトを測定し、
前記排気ラインまたは前記供給ライン内の前記QCMセンサの当該測定された共振周波数シフトに応じて前記プロセスチャンバ内の前記製造プロセスのパラメータを決定するコントローラと、を含み、
前記プロセス化学は、前記製造プロセス中の前記排気ラインまたは前記供給ライン内のプロセス化学は、前記処理チャンバ内の前記製造プロセスの消費されていない前駆体又は反応副生成物のうちの少なくとも1つを含み、前記QCMセンサの質量は、前記消費されていない前駆体ガスまたは前記反応副生成物によって変化し、前記コントローラは、前記QCMセンサの当該質量の変化を示す前記QCMセンサの測定された共振周波数シフトによって前記処理チャンバ内の前記製造プロセスの前記パラメータを決定することを特徴とする監視デバイス。 - 処理チャンバ及び複数のフローコンポーネントを含む製造システム内の製造プロセスの監視方法であって、
前記製造システムの前記複数のフローコンポーネントの1つのフローコンポーネントを監視する水晶振動子マイクロバランス(QCM)センサを配置するステップと、
前記QCMセンサを前記製造プロセス中に前記1つのフローコンポーネント内のプロセス化学に暴露するステップと、
前記製造プロセス中の前記QCMセンサと前記1つのフローコンポーネント内の前記プロセス化学との相互作用による前記QCMセンサの共振周波数シフトを測定するステップと、
前記1つのフローコンポーネント内の前記QCMセンサの当該測定された共振周波数シフトに応じて前記処理チャンバ内の前記製造プロセスのパラメータを決定するステップと、
を含むことを特徴とする製造プロセスの監視方法。 - 請求項21に記載の製造プロセスの監視方法であって、
前記QCM上に堆積されたゲッタ材を提供するステップであって、前記ゲッタ材の質量が前記製造プロセス中の前記1つのフローコンポーネント内の前記プロセス化学との相互作用によって変化するステップと、
前記1つのフローコンポーネント内の前記ゲッタ材の前記質量の変化を示す前記QCMセンサの前記測定された共振周波数シフトによって前記処理チャンバ内の空気漏洩を判定するステップと、
を含むことを特徴とする製造プロセスの監視方法。
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CN111226112A (zh) | 2020-06-02 |
IL272839B1 (en) | 2023-10-01 |
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KR20200045486A (ko) | 2020-05-04 |
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JP7237934B2 (ja) | 2023-03-13 |
US11335575B2 (en) | 2022-05-17 |
US20220285184A1 (en) | 2022-09-08 |
CN111226112B (zh) | 2024-03-15 |
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