A7 403791 -------B7 五、發明説明（1 ) ~ "'' 發明背景 1·發明領诚 (請先閱讀背面之注意事項再填寫本頁) 本發明係關於半導體裝置製造之領域，詳言之，其係關 於一種万法及裝置，用以在一半導體處理室之排手絲 測定副產品之形成》 . 2-背景資料 . 在半導體裝置之製造中，半導體裝置係藉由將—材料沉 積（或成長）及蝕刻在一半導體基質（或晶圓）上之另一材料 之上表面的層疊方式所製成。這些材料，例如，金屬、絕 緣介電體、光阻蝕刻劑等等，係沉積及/或成長在—處理/ 反應室（反應器）内之半導體基質上。 反應器之某些例子有蒸發反應器、激噴反應器、及化學 氣體沉積（CVD )反應器。此類反應器係用以在半導趙基質 上沉積/成長材料之薄膜。此類反應器之問題係在於沉積 或成長在基質上之材料及該材料之副產品，亦會沉積或成 長在反應室内之某些地方，以及/或該反應器之排放系統 中。副產品之形成可能會污染欲處理之半導體基質。 經濟部中央標準局員工消費合作社印製 當半導體裝置密度增加且該裝置之尺寸減少時，對於潛 在污染之控制需便會增加。在製造半導體裝置之期間，微 粒及薄膜污染將會在生產線下游導致該裝置之性能及可靠 度之重大問題。因此，確保該用以製造半導體裝置之反應 器儘可能地清潔及免於污染係相當重要的。 欲保持該反應器之清潔，係需要該反應器具有一良好之 排放及/或通風設備/或眞空系統（支撐系統），以移除任何 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公煃） A7 403791 五、發明説明（2 ) 不當的微粒、碎片、化學物質等等（污染物），使得此類之 污染物不會在處理期間沉積在基質上。該反應器本身及其 支撐系統有時係需要拆開及徹底地清潔，以消除任何潛在 污染物之形成。 在清潔該反應器及其支撐系統時之一個問題係在於，此 清潔工作係需要有一相當長之停工期，且若經常如此，則 對製造者而言將係相當大之損失。停工期間將會減少可處 理之基質數量，而此將限制該系統之生產量。在生產量上 之減少將會大大地改變一製造者之生產花費。 另一方面，若沒有等待足夠之時間加以清潔，則同樣地 會造成損失，因爲所製造之半導體裝置可能會受到污染。 若副產品之形成開始剝落在反應室内，或大量地形成於排 放系統而減少了氣體及/或空氣之流動，則所製造之半導 體裝置可能會受到污染。而此污染將導致該裝置不是無法 正常地作用，要不然就是根本完全失效。因此，該製造者 之產品收益將減少。更糟的是，此污染之影響當時並未顯 現出問題，而係直到該產品已經運送給一消費者時才顯 現》 所產生之問題一個例子可在薄膜之化學氣體沉積（CVD ) 中看出。一化學氣體沉積（CVD)反應器係用以將化學物質 加以反應而在基質上產生所需薄膜或薄層，然而，這些反 應亦會產生副產品，而這些副產品則係經由排放系統而由 反應室排出。通常這些副產品係形成於排放系統之管路中 且逐漸地限縮氣體流入排放系統中之量。若該排放系統未 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁) V衣·A7 403791 ------- B7 V. Description of the invention (1) ~ " '' Background of the invention 1. Inventor (please read the precautions on the back before filling this page) This invention is about the manufacture of semiconductor devices Field, in detail, it relates to a method and device for measuring the formation of by-products in a semiconductor processing chamber. 2- Background Information. In the manufacture of semiconductor devices, semiconductor devices are manufactured by applying -Laminated by material deposition (or growth) and etching on top of another material on a semiconductor substrate (or wafer). These materials, such as metals, insulating dielectrics, photoresists, etc., are deposited and / or grown on a semiconductor substrate in a process / reaction chamber (reactor). Some examples of reactors are evaporation reactors, jet reactors, and chemical gas deposition (CVD) reactors. This type of reactor is used to deposit / grow a thin film of material on a semiconductor substrate. The problem with this type of reactor is that the material deposited or grown on the substrate and by-products of the material can also be deposited or grown in some parts of the reaction chamber and / or in the reactor's exhaust system. The formation of by-products can contaminate the semiconductor substrate to be processed. Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs As the density of semiconductor devices increases and the size of the devices decreases, the need for potential pollution control increases. During the manufacture of semiconductor devices, particle and film contamination will cause significant problems in the performance and reliability of the device downstream of the production line. Therefore, it is important to ensure that the reactor used to manufacture the semiconductor device is as clean and free from contamination as possible. In order to keep the reactor clean, the reactor must have a good exhaust and / or ventilation equipment / empty system (support system) to remove any paper size applicable to China National Standard (CNS) A4 specifications (210X 297 Public note) A7 403791 V. Description of the invention (2) Improper particles, debris, chemicals, etc. (contaminants), so that such pollutants will not be deposited on the substrate during processing. The reactor itself and its supporting system sometimes need to be disassembled and thoroughly cleaned to eliminate any potential contaminant formation. One problem in cleaning the reactor and its support system is that the cleaning work requires a considerable downtime, and if this is often the case, it will be a considerable loss for the manufacturer. The downtime will reduce the number of substrates that can be processed, which will limit the throughput of the system. The reduction in production volume will greatly change the production cost of a manufacturer. On the other hand, if you do not wait for sufficient time for cleaning, it will also cause losses, because the semiconductor devices manufactured may be contaminated. If the formation of by-products begins to peel off in the reaction chamber or is formed in a large amount in the exhaust system to reduce the flow of gas and / or air, the semiconductor device manufactured may be contaminated. This contamination will result in the device not functioning properly, or it will fail completely. As a result, the manufacturer's product revenue will decrease. To make matters worse, the impact of this pollution did not appear to be a problem at the time, and it did not appear until the product was shipped to a consumer. An example of the problem can be seen in the chemical gas deposition (CVD) of thin films . A chemical gas deposition (CVD) reactor is used to react chemical substances to produce the required film or layer on the substrate. However, these reactions also generate by-products, which are discharged from the reaction chamber through the exhaust system. discharge. Usually these by-products are formed in the piping of the exhaust system and gradually limit the amount of condensed gas flowing into the exhaust system. If the emission system does not comply with the Chinese National Standard (CNS) A4 specification (210X297 mm) for this paper size (please read the precautions on the back before filling this page) V-shirt ·
、1T 經濟部中央標準局員工消費合作社印製 403791五、發明説明（3 ) A7 B7 經濟部中央橾準局員工消費合作社印裝 加以清潔，對於流動之限縮將大到足以造成廢料之倒流。 該倒流將會把化學氣體沉積（CVD )反應之副產品及所形成 之廢料吹回至反應室，而可能會污染欲處理之基質。 某些用以清潔反應器及支撐系統之先前技藝方法，係依 據一特定反應器其已經使用·之時間量及/或已經處理之基 質數量而準基。例如，一特定半導醴裝置製造者可在反應 器及支撐系統已經運轉了 7 2小時之實際處理時間後，再 決定將其加以清潔。而在另一例子中，一半導體裝置製造 者可在反應器及支撐系統已經處理了 1〇,〇〇〇個晶圓之後， 再決定將其加以清潔。再一個例子係將上述兩者加以組 合，一半導體裝置製造者可在反應器及支撐系統已經處理 了 10,000個晶圓或在7 2小時之後，視何者較少（或較多， 當其可能發生時）而決定將其加以清潔。 大部份所用之先前技術方法，係以目視檢查該反應室及 支携'系統是否有需要加以清潔。然而不幸地，此種目視檢 查方式之缺點在於該反應器必須關閉，以及欲檢查之反應 器及/或支撐系統必須加以扯開以看清楚在其内部之衍生 物數量。在上述化學氣體沉積（CVD )反應器之排放系統的 例子中，其排放管（或其某部份）係必須加以拆解，以目視 檢查其衍生物之數量。 當目視檢查及清理完衍生物之後，接著該特定之製造者 必須決定該支撐系統及反應器是否有需要加以清潔。於此 再一次地，該製造者必須衡量取決，花費時間去清潔衍生 物並不是很多之反應室的經濟效益，相對於將該反應器及 -6- 本紙張尺度適用中國國家標準（CNS ) A4現格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) .裝·--- —*訂 經濟部中央標準局員工消費合作杜印装 A7 __________________B7_ 五、發明説明（4 ) " ' 支撐系統先組裝回去，而稍後再將其重新檢查及/或清潔 之經濟效益。 ~ 決定何時清潔該反應器及支撐系統，大部份係取決於該 製程之參數。所處理的係何種製程、一特定製程可容許多 少之污染、所使用的係何種類型之化學物質、所使用之化 學物質具有何種污染、這些化學物質具有何種^產品等 等。該變數係如此之多，因此很難以決定該反應器及支撑 系統何時應當加以清潔。 因是，所需要者乃係—種方法及裝置，用以決定該反應 器及其支撐系統何時應加以清潔，而不會具有關於目視檢 查所產生之困難，且使欲處理之基質被污染之風險較小， 並可增進清潔處理之經濟效益。 發明摘要 本發明係説明一種用以偵測廢料衍生物之方法及装置。 本發明之一實施例係放置一薄膜厚度測量裝置於一反應器 之排放管内。該薄膜厚度測量裝置係定位在排放管内之第 —位置。接著利用該薄膜厚度測定裝置而在該第一位置上 測量出一廢料副產品衍生物之厚度。 本發明之額外的特徵及優點將由以下之詳細説明、圖式 及申請專利範圍而得以深入瞭解。 圖式簡單銳.明 本發明將藉由實例，但並非用以限制，並配合所附之圖 式而加以說明，其中： 圖1顯示—化學氣體沉積（CVD )反應器之實施例的斷面 本紙張尺度_巾關家制( CNS > Λ4規格（21Gx 297公缓） (請先閱讀背面之注意事項再填寫本頁) 訂·. 經濟部中央橾準局貝工消費合作社印裝 403791 a7 ________B7____ 五、發明説明（5 ) 圖。 圖2顯示一化學氣體沉積（CVD )反應器及排放系統之實 施例的斷面圖。 圖3顯示一晶體微量平衡（qcm )之實施例。 詳細説明 - 砻 所揭露者乃係一種用以測量化學氣體沉積（CVD )廢料沉 積之晶體微量平衡（QCM )。在以下之説明中，數個特定 之細節係以諸如特定之材料、製程參數、設備等等之方式 加以説明，以提供對於本發明之徹底瞭解。然而很明顯 地’對於習於此技者而言，這些特定之細節在實現本發明 上並不是必須加以採用者。在其他的例子中，習知之材料 或方法並未加以詳細説明，以避免對於本發明產生不必要 之混淆。 本發明説明一種方法及裝置，其係用以偵測在一半導體 處理室中之廢料衍生’而不需要使用目視檢查以及將排放 系統拆解。在半導體裝置之製造中，維持處理/反應室（反 應器）及其支撑系統之清潔，以降低所製造之半導體裝置 的潛在污染'係相當重要的。 在半導體裝置之製造中，該用以製造半導體薄膜及/或 薄層之反應及製程將會形成副產品。這些副產品通常係街 生在反應室之内壁或在反應室内之排放系統中。此種副產 品之衍生將可能會污染處理過之半導體基質（或晶圓）。因 此，该反應器及排放系統必須周期性地加以清潔，並且將 副產品衍生物加以清除。 , -8 - 本紙張尺;Ϊ適用中國國家標隼（CNS ) Μ規格（210X297公廣> (請先閲讀背面之注意事項再填寫本頁) •訂. 五、發明説明（6 )1T Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 403791 V. Description of the Invention (3) A7 B7 The printed prints of the Consumer Cooperatives of the Central Procurement Bureau of the Ministry of Economic Affairs shall be cleaned, and the restriction on the flow will be large enough to cause a backflow of waste. This backflow will blow back by-products of the chemical gas deposition (CVD) reaction and the formed waste material back to the reaction chamber, which may contaminate the substrate to be treated. Some prior art methods for cleaning reactors and support systems are based on the amount of time a particular reactor has been used and / or the amount of substrate that has been processed. For example, the manufacturer of a particular semiconducting tritium device may decide to clean the reactor and support system after it has been operating for 72 hours. In another example, a semiconductor device manufacturer may decide to clean the reactor and support system after it has processed 10,000 wafers. Another example is a combination of the above two. A semiconductor device manufacturer can process 10,000 wafers in the reactor and support system or after 72 hours, whichever is less (or more, when it may occur) Sometimes) and decided to clean it. Most prior art methods used visually inspected the reaction chamber and supporting system for cleaning. Unfortunately, however, the disadvantages of this visual inspection method are that the reactor must be shut down and the reactor and / or support system to be inspected must be torn apart to see the amount of derivatives inside it. In the above example of a chemical gas deposition (CVD) reactor discharge system, the discharge pipe (or part of it) must be disassembled to visually check the amount of its derivatives. After the derivatives have been visually inspected and cleaned, the particular manufacturer must then decide whether the support system and reactor need to be cleaned. Here again, the manufacturer must weigh the economic benefits of the reaction chamber, which takes a lot of time to clean the derivatives. Compared with the reactor and the -6- this paper standard applies Chinese National Standard (CNS) A4 Present (210 X 297 mm) (Please read the precautions on the back before filling out this page). Installation · --- — * Order the consumer cooperation of the Central Bureau of Standards of the Ministry of Economic Affairs A7 __________________B7_ 5. Description of the invention (4 ) " 'The economic benefits of assembling the support system first and re-inspecting and / or cleaning it later. ~ Deciding when to clean the reactor and support system depends largely on the parameters of the process. What kind of process is handled, how much pollution can be accommodated by a particular process, what type of chemical substance is used, what kind of pollution does the chemical substance used, what kind of product do these chemical substances have, etc. With so many variables, it is difficult to decide when the reactor and support system should be cleaned. Because what is needed is a method and device to determine when the reactor and its support system should be cleaned without the difficulties associated with visual inspection and the contamination of the substrate to be treated The risks are small and it can increase the economic benefits of cleaning. Summary of the Invention The present invention describes a method and device for detecting waste derivatives. An embodiment of the present invention is to place a thin film thickness measuring device in a discharge pipe of a reactor. The film thickness measuring device is positioned at the first position in the discharge pipe. The film thickness measuring device is then used to measure the thickness of a waste by-product derivative at the first position. The additional features and advantages of the present invention will be thoroughly understood from the following detailed description, drawings and patent application scope. The drawings are simple and sharp. It is clear that the present invention will be described by way of example, but not by way of limitation, and in conjunction with the accompanying drawings, in which: Figure 1 shows a cross section of an embodiment of a chemical gas deposition (CVD) reactor Size of this paper _ towel system (CNS > Λ4 size (21Gx 297)) (Please read the notes on the back before filling out this page) Order .. Printed by the Central Laboratories Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperatives, printed 403791 a7 ________B7____ 5. Description of the invention (5) Figure. Figure 2 shows a cross-sectional view of an embodiment of a chemical gas deposition (CVD) reactor and exhaust system. Figure 3 shows an example of a crystal microbalance (qcm). Detailed description-者 Disclosed is a crystal microbalance (QCM) used to measure chemical gas deposition (CVD) waste deposition. In the following description, several specific details are based on specific materials, process parameters, equipment, etc. The methods are described in order to provide a thorough understanding of the present invention. However, it is obvious that to those skilled in the art, these specific details are not necessarily required to implement the present invention. In other examples, conventional materials or methods have not been described in detail to avoid unnecessary confusion with the present invention. The present invention describes a method and apparatus for detecting waste in a semiconductor processing chamber Derived 'without the need for visual inspection and disassembly of the discharge system. In the manufacture of semiconductor devices, maintaining the cleanliness of the processing / reaction chamber (reactor) and its supporting system to reduce the potential pollution of the manufactured semiconductor devices' system It is very important. In the manufacture of semiconductor devices, the reactions and processes used to manufacture semiconductor thin films and / or thin layers will form by-products. These by-products are usually generated on the inner wall of the reaction chamber or in the exhaust system of the reaction chamber. . Derivation of such by-products may contaminate the treated semiconductor substrate (or wafer). Therefore, the reactor and exhaust system must be cleaned periodically and by-product derivatives removed., -8-This paper Ruler: Ϊ Applicable to China National Standard (CNS) M specifications (210X297 public broadcasting >) (Please read the precautions on the back first (Fill in this page again) • Order. V. Description of Invention (6)
如上所述，反應器及支撐系統之保養頻率將視許多會影 響該副產品此積形成物之因素而有所不同β這些因素，但 並非僅限制於此’包括；所處理的係何種製程、一特定製 程可容許多少之污染、所使用的係何種類型之化學物質、 所使用之化學物質具有何種污染 '這些化學物質具有何種 副產品等等。 V 本發明係一種方法及裝置，其係用以測定在一反應器中 之廢料副產品形成物之量。雖然在以下之説明中，本發明 係針對一化學氣體沉積（CVD)反應器而説明本發明之應 用’然而對於此技藝有普遍瞭解之人士應注意且應可瞭 解，本發明也可與其他反應器配合使用，例如蒸氣式反應 器及激喷式反應器。對於一採用本發明之化學氣體沉積 (C VD )反應器其特別之優點將在以下詳述。 經濟部中央標準局負工消費合作社印装 (請先閱讀背面之注意事項再填寫本頁) 在一化學氣體沉積（CVD )反應器中，化學物質係組合在 一起而在一半導體基質上沉積成一薄膜，例如，一取向附 生之矽薄層。一化學氣體沉積（CVD )反應器100之實施例 係顯示於圖1。一化學氣體沉積（CVD )反應器之例子係由 加州聖塔克拉拉市之應用材料公司（Applied Material Corporation )所發展出來之Epi Centura型反應器。一半導 體基質（基質）110係藉由基質固定器120及位於反應器1〇〇 之反應室（腔室）130内之容納器125，而將其固定在定位 上。該基質110係受到一化學物質之組合及一高溫作用， 用以在基質110之表面上成長出一薄膜（或薄層）。反應化 學物質（或氣體）係傳送至腔室130且通過基質1 10之表 -9- 本紙張尺度適用中國國家橾準（CNS > A4規格（210Χ297公釐） 經濟部中央橾準局貞工消費合作社印装 403^^^* A7 __________B7 五、發明説明（7 ) -- 面’如圖1所示之氣體層流14〇。 當氣體已經傳达至腔室13〇内，.而在腔室13〇内之壓 維持在一固足（恩力，例如，在大約爲大氣壓力或較低之 壓力，且將腔室U0之温度加以提高，以促進氣體之化學 反應。該氣體、壓力、高溫及其他參數之組合造成所需要 之薄膜可以沉積或成長在基質丨1〇。此一製程二直持續 著，直到已經達到所需之薄膜厚度爲止。此化學氣體沉積 (CVD)反應之副產品（副產品）及剩餘氣體流係經擠壓而通 過腔室130，並將廢料15〇推出排放系統（未顯示）。 圖2顯示圖1所示之化學氣體沉積（CvD )反應器連接至 一排放系統。遠剩餘氣體流及副產品係被推出該腔室13 〇 而進入至排放系統200。當廢料經過排放系統2〇〇時，其 副產品使衍生在排放管之壁體上。一般而言，大量之副產 品衍生物係形成於排放管之起始端210處，而較小量之副 產品衍生物則係形成於排放管之後端2 8 0處。在上述任一 種情況中，副產品沉積在排放管内側之衍生物將如上所述 者，限縮氣體流經排放系統200且可能造成倒流。該倒流 將會把化學氣體沉積（CVD )反應之副產品及所形成之廢料 吹回至反應室，而可能會污染已製成之半導體裝置。 爲了防止此倒流，本發明測定該沉積在排放管内之副產 品衍生物，而不需要以目視檢查該排放管之内部。換言 之，本發明並不需要將該反應器及支撐系統關閉、拆解及 目視檢查，以測定衍生在反應器及支撐系統内之副產品的 量。取而代之的係藉由使用一薄膜厚度測量装置’本發明 -10· 本紙張尺度適用中國國家橾準（CNS > Α4規格（210X297公釐） -------1 ----"'w/ 裝 --L---L--訂-------ί·^ 丨 * > - (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局貝工消费合作杜印製 403791 at ______ _B7_ 五、發明説明（8 ) 便可測定衍生物之量而—會影響該反應器之產量。本發明 亦可免除考慮所有會影響沉積衍生物之不同因素.，其係藉 由測定或量化該確實產生之衍生物的數量，而不論在反應 至内係進行何種特定之製程。 本發明之一實施例係在一反應器之排放管内使用一種薄 Μ厚度測量裝置。將薄膜厚度測量裝置放置在排^管内， 可測量在處理室内該位置處之副產品衍生物。然後，隨著 薄膜厚度測量裝置之定位及副產品衍生物在該位置處之厚 度’便可測定出副產品衍生物在排放管内其他位置處之數 量’以及甚至在反應室其本身内部之衍生物數量。因此， 本發明使用之薄膜厚度測量裝置，其係用以測量在薄膜沉 積處理期間所產生之副產品厚度，而非測量已經沉積或成 長在基質上之薄膜厚度。 値得注意且對於此技藝有普通瞭解之人士皆可明瞭，該 薄膜厚度測量裝置係可放置在反應器支撐系統之其他部 位，例如，可將薄膜厚度測量裝置放置在通風系統内。然 而’値得注意的是，該薄膜厚度測量裝置係應當放置在可 暴露於反應物氣體中，或可暴露在反應器内所執行之製程 的副產品之部位（亦即，在會遭受到副產品沉積及衍生之 部位）。 藉由測量副產品而非薄膜本身，本發明便可展現”隨處 可得（in_line ) ”之特性’而非在薄膜厚度測量技術中普遍 使用之”原處（in-situ )π特性。例如，爲了測定—沉積或成 長之薄膜厚度，一薄膜厚度測量裝置便需直接地放置在反 -11 - 本紙張尺度適用中國國家標隼（CNS ) Λ4規格（2丨0X297公釐） (請先閲讀背面之注意事項再填寫本頁) 訂. 經濟部中央標準局員工消費合作社印製 __403791_Βτ__ 五、發明説明（9 ) 應室（亦即，在原處）内，而受到相同於基質所受到之處 理，且成長於基質上之相同薄膜層亦會成長在薄膜厚度測 量裝置上。 關於薄膜厚度之測量存在有許多之難題。其中一難題係 在於由薄膜厚度所能夠得知之關於所產生的副產品衍生物 係相當少。隨著所採用之製程種類，該副產品衍•生物之量 可能與實際成長沉積在基質上之薄矂厚度完全不同。換言 之，隨著數種不同之因素，該副產品衍生物可能會遠大於 薄膜之厚度，或反之亦然。另一難題係在於某些薄膜厚度 測量裝置可能無法使用在某些反應室。例如，由於在—化 學氣體沉積（CVD )反應器所使用之高溫，使得許多薄膜厚 度測量裝置係無法使用，薄膜厚度測量裝置基本上對於溫 度及溫度變化係相當地敏感，且由於在一化學氣體沉積 (CVD )反應器所使用之溫度基本上係相當高，因此使得在 原處測量係相當地不準確。 在本發明之一實施例中，該薄膜厚度測量裝置係用以測 量副產品沉積，且其係放置在排放系統内之"任意位置處 (in-line )"。爲了避免關於溫度及溫度變化擾動之難題， 便可將該薄膜厚度測量裝置放置在排放系統内之一廢料流 已經冷卻且溫度較爲穩定之部位。在本發明之一實施例 中，該薄膜厚度測量裝置係放置在一溫度大約爲室溫之部 位上。如圖2所示，薄膜厚度測量裝置290係位於遠離反 應室130夠遠之位置，而在該處廢料係己經冷卻至一更適 於使用一晶體微量平衡（QCM )之溫度。 -12- 本紙張尺度適用中國國家橾準（CNS > Α4規格（210 X 297公釐） (請先閲讀背面之注意事項再填寫本頁) 裝 i^n n^n —l·— _ -訂 ί,,Λ. 403791 經濟部中央標隼局貝工消费合作社印裝 五、發明説明（10 ) 在本發明之一實施例中，一晶體微量平衡感測器（QCM ) 係用以當做該薄膜厚度測量裝置。一晶體微量平衡（QCM) 係一種厚度測量裝置，其係藉由測定物質附接（或沉積）在 晶體微量平衡（QCM)之感應表面上之量而加以測量其質 量。圖3顯示一晶體微量平衡（QCM )。晶體微量平衡 (Q C Μ ) 3 0 0測量沉積在感測表面3 1 0上之薄層厚Λ度。 一晶體微量平衡（QCM )係可在原處測量該沉積/成長在 反應器内之晶圓上之薄層或薄膜的厚度。然而，本發明爲 此目的而使用該晶體微量平衡（QCM)»相反地，本發明 係使用晶體微量平衡（QCM )以測量（或測定）由在一基質 上製造一薄膜之製程中所產生之副產品衍生物之量，而非 薄膜本身之厚度。除此之外，本發明並非在原處使用該晶 體微量平衡（QCM)，而是將晶體微量平衡（QCM)定位在 反應器之其中一支撐系統上。藉由將晶體微量平衡（QCM ) 定位在反應器之其中一支撐系統上，便可測定在該支撐系 統内之副產品衍生物的量。一旦在晶體微量平衡（QCM ) 位置上之副產品衍生物的量已經測定出來，則根據諸如距 該晶體微量平衡（QCM )之距離、該晶體微量平衡（QCM ) 相對於反應室之位置、氣體種類或所使用之化學反應物、 反應時間等等之因素，便可測定出在相同系統内之其他位 置處、其他支撐系統及反應器内之副產品衍生物的量。 當其測定出該副產品衍生物之量已經達到某一程度時， 然後製造者便視需要而關閉及拆解該反應器及支撐系統， 以清理反應室、排放系統及其他支撐裝置。藉由測定沉積 13- 本紙張尺度適用中國國家標準（CNS ) Α4規格（2ΙΟΧ297公釐） (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 403791 B7 五、發明説明（11 ) 衍生物之量而不需要將排放系統及反應室拆解，基本上相 對於清潔該反應室及支撐系統所需之關閉時間便可降低。 降低關閉時間便可增加該反應器之產量。本發明亦可免除 考慮所有會影響沉積衍生物之不同因素，其係藉由測定或 量化該確實產生之衍生物的數量，而不論在反應室内係進 行何種特定之製程。 晶體微量平衡（QCM )對於溫度及氣體密度係相當敏感。 換言之，該晶體微量平衡（QCM )之精確度大部份係端視 溫度之穩定性及氣體密度。若溫度或氣體密度係傾向於波 動，則晶體微量平衡（QCM )之測量亦將如此。一晶體微 量平衡（QCM )之作用可到達至一大約120°C之溫度，且也 可在蒸氣式及激喷式反應器内原處使用，因爲在反應室内 之溫度係相當固定，且相較於使用在化學氣體沉積（CVD ) 反應器，其亦具有較低之溫度。 然而，因爲在本發明之晶體微量平衡（QCM )係用以測量 副產品衍生物之量且係放置在排放系統内，該晶體微量平 衡（QCM )在溫度上之依存性係較低的。因此，不論在反 應室内之製程有何溫度需求，其僅與該晶體微量平衡 (QCM )在排放系統内所在位置處之溫度有關。在本發明 之一實施例中，該晶體微量平衡（QCM )係放置在排放系 統内之一定位上，在該處該廢料係以其到達該晶體微量平 衡（QCM )之時間而得以冷卻至，例如室溫。因此，本發 明可以使用在任何反應室之排放系統中，包括諸如化學氣 體沉積（CVD )反應室之使用高溫的腔室。 -14- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） .^^i- I (^ϋ l^i ml —cm n^l nn 為 —HI— ml T< L.^^— . - , (請先閲讀背面之注意事項再填寫本頁) 403791 at __-____B7___ 五、發明説明（12 ) 値得注意的是’該晶體微量平衡（QCM )通常係與具有原 子單分子層範圍之測量連用。因此將晶體微量平衡（QCM ) 定位在該副產品衍生物係具有原子單分子層範圍之位置便 變得相當重要。將該晶體微量平衡（QCM )定位在具有較 厚衍生物之位置處可能會導致該晶體微量平衡（QCM)失 效。 * 亦應注意的是，在一處於大氣壓力下之系統中，例如_ 化學氣體沉積（CVD )反應器，該氣體流經排放管之量係遠 大於（或高於）基本上使用一晶體微量平衡（QCM )之環境 中該氣體之流量。因此，在一化學氣體沉積（c v D )系統 中將晶體微量平衡（QCM )放置在距反應室0之處將更 爲有利。 經濟部中央標準局貝工消費合作社印裝 如圖2所示，厚度測量裝置290係定位在接近排放管之後 端280處。通常，廢料在其到達排放管後端28〇之前係有 —段時間可以冷卻。然而應注意的是，該厚度測量裝置 290係可以放置在排放系統2〇〇内之任何位置處，只要該 處之溫度係在所使用之特定厚度測量裝置之有效參數範圍 内即可。再者’在排放管後端280之副產品衍生物係遠少 於在排放管起始端2 10處之副產品衍生物。因此，該厚度 測量裝置290將不會遇到具較厚層膜之副產品衍生物。然 而應注意的是’該厚度測量裝置290係可以放置在排放系 統200内之任何位置處，只要該處之副產品衍生物係在所 使用之特定厚度測量裝置之有效參數範圍内即可。 一旦在該厚度測量裝置處之副產品衍生物的量已經測定 -15- 本紙張尺度適用中國國家標準（CNS ) A4規格（21〇Χ297公$ ) 403791 五、發明説明（13 ) $來’則在排放系統内之其他位置、其他支撐系統及反應 器本身（副產品衍生物亦可測定出來。舉例來説，若厚度 測量裝置290在排放系統2〇〇之後端28〇處測定出副產品衍 生物·^量，然後藉由利用一轉換因子，便可將該排放系統 200之起始端210處之副產品衍生物的量測定出來。此轉 換因子可能需要，例如，由厚度測量裝置至測定*衍生物之 位置間的距離、管子之長度、管子之直徑、流動速率、距 反應室之距離等等。 雖然上述之本發明係針對一晶體微量平衡（QCM )而説明 之，然而應注意的是，亦可使用其他厚度測量裝置。舉例 來説，本發明（另一實施例係使用一具有—視窗及一光流 之感測器（感測器）。此一感測器亦可用於測量副產品衍生 物之厚度，及/或決定何時該副產品衍生物之量已經厚到 必須清潔反應器及支擇系統。 經濟部中央標準局員工消費合作社印製 (請先閲讀背面之注意事項再填寫本頁) 因此，用以測量化學氣體沉積（CVD )廢料沉積之晶體微 量平衡（QCM)已經揭露於上。雖然特定之實施例，包括 特定裝備、參數、方法、及物質已加以說明，然而對於此 技藝有普通瞭解在讀完本説明後，對於所揭露之實施例加 以不同之修飾，乃係可輕易思及而爲之。因此，應可理解 此類之實施例僅係本廣泛發明之示例而非限制，且本發明 並非僅限制在所說明及圖示之特定實施例中。 -16- 本紙張尺度適用中國國家搮率（CNS ) A4規格（2丨0x297公着）As mentioned above, the maintenance frequency of the reactor and the support system will vary depending on many factors that will affect the formation of this by-product. These factors are not limited to this. Included; what process is being processed, How much pollution a particular process can tolerate, what type of chemical substance is used, what kind of pollution the chemical substance used ', what kind of by-products do these chemical substances have, and so on. V The present invention is a method and apparatus for determining the amount of waste by-product formation in a reactor. Although in the following description, the present invention is directed to a chemical gas deposition (CVD) reactor to illustrate the application of the present invention, however, those who have a general knowledge of this technology should pay attention and should understand that the present invention can also react with other Reactors, such as steam reactors and jet reactors. Specific advantages for a chemical gas deposition (C VD) reactor employing the present invention will be detailed below. Printed by the Central Standards Bureau of the Ministry of Economic Affairs and Consumer Cooperatives (please read the precautions on the back before filling this page) In a chemical gas deposition (CVD) reactor, chemical substances are combined and deposited on a semiconductor substrate. A thin film, for example, a thin layer of epitaxial silicon. An embodiment of a chemical gas deposition (CVD) reactor 100 is shown in FIG. An example of a chemical gas deposition (CVD) reactor is an Epi Centura type reactor developed by Applied Material Corporation of Santa Clara, California. The semi-conductive matrix (matrix) 110 is fixed in position by a matrix holder 120 and a holder 125 located in a reaction chamber (chamber) 130 of the reactor 100. The substrate 110 is subjected to a combination of a chemical substance and a high temperature to grow a thin film (or thin layer) on the surface of the substrate 110. The reaction chemical substance (or gas) is delivered to the chamber 130 and passed through the matrix 1-10. Table 9- This paper size applies to the Chinese National Standard (CNS > A4 size (210 × 297 mm)) Consumption Cooperative Printing 403 ^^^ * A7 __________B7 V. Description of the Invention (7)-Surface 'Laminar flow of gas 14' as shown in Figure 1. When the gas has been transmitted to the chamber 130, and in the chamber The pressure in the chamber 13 is maintained at a fixed level (e.g., at about atmospheric pressure or a lower pressure, and the temperature of the chamber U0 is increased to promote the chemical reaction of the gas. The gas, pressure, The combination of high temperature and other parameters causes the required thin film to be deposited or grown on the substrate. This process continues until the required film thickness has been reached. The by-product of the chemical gas deposition (CVD) reaction ( By-products) and residual gas flow are extruded through the chamber 130 and the waste material 150 is pushed out of the discharge system (not shown). Figure 2 shows a chemical gas deposition (CvD) reactor shown in Figure 1 connected to a discharge system .Far remaining gas The flow and by-products are pushed out of the chamber 130 and enter the discharge system 200. When the waste passes through the discharge system 200, its by-products are derived on the wall of the discharge pipe. Generally speaking, a large number of by-product derivatives are It is formed at the starting end 210 of the discharge pipe, and a smaller amount of by-product derivatives is formed at the rear end of the discharge pipe 280. In any of the above cases, the derivatives of the by-product deposited on the inside of the discharge pipe will be as above. As mentioned, the restrictive gas flows through the exhaust system 200 and may cause backflow. The backflow will blow back by-products of the chemical gas deposition (CVD) reaction and the formed waste material back to the reaction chamber, which may contaminate the fabricated semiconductor In order to prevent this backflow, the present invention measures the by-product derivatives deposited in the discharge pipe without visually inspecting the inside of the discharge pipe. In other words, the invention does not require the reactor and the support system to be closed and disassembled And visual inspection to determine the amount of byproducts derived in the reactor and support system. Instead, by using a thin film thickness measuring device ' Invention-10 · This paper size is applicable to China National Standard (CNS > Α4 size (210X297mm) ------- 1 ---- &w; installed --L --- L-- Order ------- ί · ^ 丨 * >-(Please read the precautions on the back before filling this page) Printed by the Shellfish Consumer Cooperation Department of the Central Bureau of Standards of the Ministry of Economic Affairs 403791 at ______ _B7_ V. Description of the Invention ( 8) The amount of derivative can be determined-it will affect the yield of the reactor. The present invention can also eliminate the need to consider all the different factors that affect the deposition of the derivative. It is determined by measuring or quantifying the Quantity, regardless of the specific process performed in the reaction to the system. One embodiment of the present invention uses a thin M thickness measuring device in the exhaust pipe of a reactor. The film thickness measuring device is placed in the exhaust pipe to measure the by-product derivative at that position in the processing chamber. Then, with the positioning of the film thickness measuring device and the thickness of the by-product derivative at that position ', the amount of the by-product derivative at other positions in the discharge pipe' and the amount of the derivative even inside the reaction chamber itself can be determined. Therefore, the film thickness measuring device used in the present invention is used to measure the thickness of by-products generated during the film deposition process, rather than measuring the thickness of the film that has been deposited or grown on the substrate. Anyone who has noticed and has a general understanding of this technology will understand that the film thickness measurement device can be placed in other parts of the reactor support system, for example, the film thickness measurement device can be placed in a ventilation system. However, it should be noted that the film thickness measurement device should be placed in a place that can be exposed to the reactant gas or by-products of the process performed in the reactor (that is, where it will be subject to by-product deposition And derived parts). By measuring by-products rather than the film itself, the present invention can exhibit "in-line" characteristics rather than "in-situ" π characteristics commonly used in film thickness measurement technology. For example, to Measurement-the thickness of the deposited or grown film, a film thickness measuring device needs to be placed directly on the anti-11-This paper size is applicable to the Chinese National Standard (CNS) Λ4 specification (2 丨 0X297 mm) (Please read the back Note: Please fill in this page again.) Order. Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs __403791_Βτ__ V. Description of the Invention (9) The application room (ie, in situ) is treated in the same way as the substrate, and The same film layer grown on the substrate will also grow on the film thickness measuring device. There are many problems with the measurement of film thickness. One of the problems is that the by-product derivatives that can be learned from the film thickness are equivalent. Depending on the type of process used, the amount of this byproduct derived organism may be completely different from the thickness of the thin maggot deposited on the substrate. In other words, with several different factors, the byproduct derivative may be much larger than the thickness of the film, or vice versa. Another difficulty is that some film thickness measuring devices may not be used in some reaction chambers. For example, due to The high temperature used in the chemical gas deposition (CVD) reactor makes many thin film thickness measurement devices unusable. The thin film thickness measurement device is basically sensitive to temperature and temperature changes. ) The temperature used in the reactor is basically quite high, so that the in-situ measurement system is quite inaccurate. In one embodiment of the present invention, the film thickness measuring device is used to measure the deposition of by-products, and it is placed at "In-line" in the discharge system. In order to avoid the problems about temperature and temperature change disturbance, the film thickness measuring device can be placed in the discharge system. One of the waste streams has been cooled and the temperature is relatively low. Is a stable part. In one embodiment of the present invention, the film thickness measuring device is placed on a The temperature is about the room temperature. As shown in FIG. 2, the thin film thickness measuring device 290 is located far enough away from the reaction chamber 130, and the waste material has been cooled to a position more suitable for the use of a crystal microbalance. (QCM) temperature. -12- This paper size applies to China National Standards (CNS > Α4 size (210 X 297 mm) (Please read the precautions on the back before filling out this page). Install i ^ nn ^ n — l · — _-Order ί, Λ. 403791 Printed by the Shellfish Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 5. Description of the Invention (10) In one embodiment of the present invention, a crystal microbalance sensor (QCM) Used as the film thickness measuring device. A crystal microbalance (QCM) is a thickness measuring device that measures its mass by measuring the amount of substance attached (or deposited) on the sensing surface of the crystal microbalance (QCM). Figure 3 shows a crystal microbalance (QCM). Crystal microbalance (Q C M) 3 0 0 measures the thickness Λ of the thin layer deposited on the sensing surface 3 1 0. A crystal microbalance (QCM) is a measure of the thickness of the thin layer or film on the wafer deposited / grown in the reactor in situ. However, the present invention uses the crystal microbalance (QCM) for this purpose. Conversely, the present invention uses a crystal microbalance (QCM) to measure (or determine) what is produced by a process for making a thin film on a substrate. The amount of byproduct derivatives, not the thickness of the film itself. In addition, the present invention does not use the crystal microbalance (QCM) in situ, but instead positions the crystal microbalance (QCM) on one of the support systems of the reactor. By positioning the crystal microbalance (QCM) on one of the support systems of the reactor, the amount of by-product derivatives in the support system can be determined. Once the amount of by-product derivatives at the position of the crystal microbalance (QCM) has been determined, according to, for example, the distance from the crystal microbalance (QCM), the position of the crystal microbalance (QCM) relative to the reaction chamber, the type of gas Or the chemical reactants used, reaction time, etc., the amount of by-product derivatives at other locations in the same system, other support systems, and reactors can be determined. When it is determined that the amount of the by-product derivative has reached a certain level, the manufacturer then closes and disassembles the reactor and the supporting system as necessary to clean the reaction chamber, the exhaust system, and other supporting devices. By measuring the deposit 13- This paper size applies the Chinese National Standard (CNS) A4 specification (2IO × 297 mm) (Please read the precautions on the back before filling this page) Printed by the Consumers Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 403791 B7 V. Description of the invention (11) The amount of derivatives does not need to disassemble the discharge system and the reaction chamber, which can basically be reduced compared to the closing time required to clean the reaction chamber and the support system. Reducing the shutdown time can increase the yield of the reactor. The present invention also eliminates the need to consider all the different factors that can affect the deposited derivatives by measuring or quantifying the number of derivatives that do occur, regardless of the particular process performed in the reaction chamber. Crystal microbalance (QCM) is quite sensitive to temperature and gas density. In other words, most of the accuracy of the crystal microbalance (QCM) is the stability of the apparent temperature and the gas density. If temperature or gas density tends to fluctuate, so will the measurement of crystal microbalance (QCM). The effect of a crystal microbalance (QCM) can reach a temperature of about 120 ° C, and it can also be used in situ in steam and jet reactors, because the temperature in the reaction chamber is relatively fixed, and compared to Used in chemical gas deposition (CVD) reactors, which also have lower temperatures. However, since the crystal microbalance (QCM) in the present invention is used to measure the amount of by-product derivatives and is placed in the exhaust system, the crystal microbalance (QCM) has a lower temperature dependence. Therefore, regardless of the temperature requirements of the process in the reaction chamber, it is only related to the temperature of the crystal microbalance (QCM) at the location in the discharge system. In one embodiment of the present invention, the crystal microbalance (QCM) is placed at a position in the exhaust system, where the waste is cooled to the time when it reaches the crystal microbalance (QCM), For example room temperature. Therefore, the present invention can be used in an exhaust system of any reaction chamber, including a high-temperature chamber such as a chemical gas deposition (CVD) reaction chamber. -14- This paper size is in accordance with Chinese National Standard (CNS) A4 (210X 297 mm). ^^ i- I (^ ϋ l ^ i ml —cm n ^ l nn is —HI— ml T < L. ^ ^ —.-, (Please read the precautions on the back before filling out this page) 403791 at __-____ B7___ V. Description of the Invention (12) It should be noted that 'the crystal microbalance (QCM) is usually related to a single molecule with an atom The measurement of the layer range is used in combination. Therefore, it is very important to locate the crystal microbalance (QCM) at a position where the byproduct derivative has an atomic monolayer layer range. The crystal microbalance (QCM) is positioned at a thicker derivative. This location may cause the crystal microbalance (QCM) to fail. * It should also be noted that in a system under atmospheric pressure, such as a chemical gas deposition (CVD) reactor, the gas flows through the exhaust pipe. The amount is much larger (or higher) than the flow rate of the gas in an environment where a crystal microbalance (QCM) is basically used. Therefore, a crystal microbalance (QCM) is placed at a distance from a chemical gas deposition (cv D) system. The reaction chamber 0 will be more advantageous. Printed by the Central Standards Bureau of the Ministry of Economic Affairs of the Bayer Consumer Cooperative, as shown in Figure 2, the thickness measuring device 290 is positioned close to the rear end 280 of the discharge pipe. Generally, the waste material has a period of time before it reaches the rear end of the discharge pipe 28. It can be cooled. However, it should be noted that the thickness measurement device 290 can be placed at any position within the emission system 2000 as long as the temperature there is within the valid parameter range of the specific thickness measurement device used Furthermore, the by-product derivatives at the rear end of the discharge tube 280 are far less than the by-product derivatives at the start end of the discharge tube 2-10. Therefore, the thickness measuring device 290 will not encounter by-products with a thicker film Derivatives. However, it should be noted that 'the thickness measuring device 290 can be placed anywhere within the discharge system 200, as long as the by-product derivatives there are within the valid parameter range of the specific thickness measuring device used . Once the amount of by-product derivatives at the thickness measuring device has been determined -15- This paper size applies Chinese National Standard (CNS) A4 specification (21〇 × 297 $) 403791 V. Description of the invention (13) $ 来 'is in other positions in the emission system, other supporting systems and the reactor itself (by-product derivatives can also be determined. For example, if the thickness measuring device 290 is in the emission system The amount of by-product derivatives at 280 after the end of 2000 is measured, and then by using a conversion factor, the amount of by-product derivatives at the beginning 210 of the emission system 200 can be determined. This conversion factor may be Needs are, for example, the distance from the thickness measuring device to the position where the * derivative is measured, the length of the tube, the diameter of the tube, the flow rate, the distance from the reaction chamber, and the like. Although the present invention has been described with respect to a crystal microbalance (QCM), it should be noted that other thickness measurement devices may be used. For example, the present invention (another embodiment uses a sensor with a window and an optical flow (sensor). This sensor can also be used to measure the thickness of by-product derivatives, and / or determine When is the amount of this by-product derivative so thick that the reactor and the selection system must be cleaned. Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs (please read the precautions on the back before filling this page). Therefore, it is used to measure chemical gas deposition (CVD) The crystal microbalance (QCM) of waste deposition has been disclosed above. Although specific embodiments, including specific equipment, parameters, methods, and substances have been described, there is a general understanding of this technology. After reading this description, Various modifications to the disclosed embodiments can be easily taken into account. Therefore, it should be understood that such embodiments are only examples of the broad invention and are not limiting, and the invention is not limited to In the specific embodiment described and illustrated. -16- This paper size is applicable to China National Standard (CNS) A4 specification (2 丨 0x297)