經濟部智慧財產局員工消f合作社印製 4484 77 A7 B7 五、發明說明（ 5 - 1發明領域： 本發明係有關於一種半導體製程中化學氣相沈積設備 之管路系統，特別是利用一種對輸送氣體管路進行局部加 熱的裝置，以避免管路内產生附著物，進而延長化學氣相 沈積設備的維修週期。 5-2發明背景： 化學氣相沈積（Chemical Vapor Depo,sit ion)係為一 將反應物透過化學反應的方式生成固態的生成物，而沈 於晶圓表面以形成薄膜的方法。由於化學氣相沈積法的 用範圍十分廣泛’不論是導體、非導體、或半導體材料 都可以利用化學氣相沈積法沈積於晶圓表面而形成薄膜 一般而言，透過化學氣相沈積法所形成的薄膜，大多具 良好的結晶性與材料特性，因此化學氣相沈積法已成為 導體製造領域中一項基礎而且重要的單元製程。 化學氣相沈積法所使用的製程設備，最主要包含一 用以進行化學氣相沈積反應的腔室（Chanjber)。透過真空 統的作用，可將腔室之中的壓力維持在某一特定的範固 接著针對所需的沈積物’提供腔室不同的反應氣體以進 化學氣相沈積反應’❹TE0S即為—種常用以形成氧化 層的反應物。董ί某些反應物而t，在常溫下係以液體的 本紙張尺度適用中國國家標率（CNS)A4規格（2]0 * 297公茇） --n n m I -1 n I^.eJ· n I 1 It tk f— PI I . (請先閱讀背面之注意事項再填寫本頁) ^484 7 A7 B7 五、發明說明（） (請先閱讀背面之注意事項再填寫本頁) 式存在，因此在進行沈積反應時通常會將這些反應物放入 發泡室中（Bubbler)，並於其中通入載氣（Carrier Gas)以 提高容器内液態反應物在氣相尹的分壓，而達成提昇這些 反應物流量的目的。此外再配合上一些具有其他功能的管 路，如稀釋氣體輪送管路、清掃（Purge)氣體輸送管路等， 將可構成化學氣相沈積設備中的管路系統。 利用TMAT作為反應物以形成氮化鈦（Τ ί N)薄膜沈積於 晶圓表面，即為一種利用化學氣相反應設備所進行的製 程。在沈積氮化鈦時，首先可將TDMAT覃於發泡室中。接 著於其中通入載氣，並將腔室的環境調整在約375〜40(TC 與1 · 5 Torr的壓力下，使得TDMAT進行裂解而形成氮化鈦 薄膜，其反應式如下： [N(CH3)2]2Ti[N(CIl3)3]2 — Ti(C)N + (CH3)2NH +樓氫化和物 而由於剛形成的氮化矽薄膜之中含有許多的碳原子，因此 通常會再配合一道利用射頻能量所進行的處理程序，以將 碳原子趨離而形成材料性質良好的氮化鈦薄膜。 經濟部智慧財產局員工消費合作社印製 利用TDMAT裂解而形成氮化鈦薄膜的製程，往往會在 化學氣相沈積設備之管路系統中發生微粒汙染的情形β當 化學氣相沈積設備使用了 一段時間之後，其中的氣體輪送 管路與腔室中微塵汙染情形亦隨之曰益嚴重。通常當化學 本纸張尺度適用中S囤家標準（CNS)A4規格（210 X 297公s ) A7 B7 4484 7 五、發明说明（) 氣相沈積設備處理過四萬片〜六萬片晶圓時，即需要重新 更換所有的氣體輸送管路，以改善其中微麈汙染情形β更 換氣體輸送管路時’必需耗費極大的人力進行繁複的管路 更換工作。同時當更換管路時，整個化學氣相沈積設備亦 處於閒置的狀態而造成了大量的成本浪費。因此，為了減 輕工程人員在維修管路系統上的負擔，有必要對化學氣相 沈積設備中製程微粒形成的機制做詳細的研究，並進而提 出一套解決方法以克服上述之問題。 5-3發明目的及概述： ， 本發明之目的為在提供一種化學氣相沈積設備之管路 系統，並透過加熱裝置對此一管路系統局部加熱，以避免 管路系統内部產生附著物而造成系統受到微塵汙染。 本發明之另一目的為利此一局部加熱的管路系統，避 免利用TMAT進行氮化敍薄膜沈積時，所產生殘留於管路 内部的附著物。 本發明主要係提出一種化學氣相沈積設備之管路系統 的設備改良。一般而言，管路系統可將各類的製程氣體送 入腔室之中，而於晶圓表面形成一層積薄膜。而管路系統 則主要包含了載氣輸送管路、稀釋氣體輸送管路、與反應 氣體輸送管路等。載氣首先經由載氣輸送管路進入發泡室 中，以帶出反應氣體。接著與經由稀釋氣體輸送管路所輪 本紙法尺度速用中國國家標準（CNS > Α4说格（210Χ297公釐） I I n I n ( ---;--n I (請先聞讀背面之注意事項再填寫本頁) ,π 經濟部智葸財產局員工消资合作社印製 448 4 A7 B7 '發明説明（） 送的稀釋氣體相混合’再經由反應氣體輸送管路輸送至腔 室中以進行化學氣相沈積反應。 而稀釋氣體輸送管路的外部則安置有加熱裝置。使得 稀釋氣體的溫度可以提高，進而避免稀釋氣體與反應氣體 展合時，造成反應氣體凝結而附著於管路系統内部。 5 4圖式簡單說明： H. ^^^1 ^^^1 IK n In i n^i t^tl- ^^^1 I·· - ^ j (請先閲讀背面之注意事項再填寫本頁) 微 之 著 附 所 徑 内 之 間 氣 中 統 路 管 明 發 。 本 圖為 圖 5 第 部 局 裝 安 路 管 送 輸 體。 氣圖 之意 份示 部體 對立 示中的 面明置 剖發裝 的本熱 塵為加 圖 6 第 圖 意 經濟部智慧財產局員工消費合作社印製 明 說 細 詳 明 發 之 備 設 積 沈 相 氣 學 t /i 中 程 製 體 導 半 對 針 要 主 明 發 本 第： 1圖 為 本發 明 中 化 學 氣 相 沈 積 設 備 之 管 路 系 統 的 示 意圖 0 第： 2圖 為 本發 明 中 管 路 系 統 的 局 部 立 體 示 意 圖 〇 第： 3圖 為 針對 使 用 段 時 間 之 化 學 氣 相 沈 積 設 備 進 行 機械 性 檢 測 的 製 程 微 粒 分 件 示 意 圏 〇 第2 1圖 為 TDMAT 於 不 同 0® /皿 度 下 之 飽 和 蒸 氣 壓 的 曲 線 本紙張尺及適用中國國家標準（CNS)A4况格（2IOX297公|) 4484 7 A7 B7 五、發明説明（） 管路系統進行改良’使得進行氣化欽沈積製程時’避免管 路系統中發生微塵汙染問題’並進而延長管路系統的更換 週期，以減輕工程人員的負擔同時節省大量的製造成本。 以下將首先介紹一個習用之化學氣相沈積設備與其管路系 統的結構，接著再利用實際操作結果與理論分析發生微塵 汙染的原因，最後再針對所找到的原因提出管路系統的改 良設計。 請參閱第1圖，顯示了 一個以TDMAT沈積氮化欽薄膜 之化學氣相沈積設備中的氣體流路示意闺’而此一設備可 由台灣應用材料公司所銷售之機台取得。如圖中所示’各 類的製程氣體於管路系統102中流動，並經由反應氣體輸 送管路104傳送至腔室中進行化學氣相沈積反應。當 進行化學氣相沈積反應時’腔室内部的壓力會維持在一定 的範圍之内，而反應中所產生的製程廢氣則可透過排氣管 路1〇8輸出。至於當腔室108未進行反應時，則可以透過 通氣管路1 9 2的開啟而平衡腔室1 〇 8與外部環境之間的壓 力。 管路系統102包含多組具有不同功能的氣體輸送管 路，如加熱器體輸送管路110、載氣輸送管路126、處理氣 體輸送管路（Treatment Gas Line)146、稀釋氣體輸送管路 162、170、與清掃氣趙輸送管路（Purge Gas Line)178。其 中載氣（如氦氣或惰性氣體）經由載氣輸送管路126，依序 本紙張尺度適用中國國家揉準（CNS ) A4規格（2丨OX297公釐） {請先閲讀背面之注意事項再填寫本頁}Printed by the staff of the Intellectual Property Bureau of the Ministry of Economic Affairs, printed by the cooperative 4484 77 A7 B7 V. Description of the invention (5-1 Field of invention: The present invention relates to a piping system for chemical vapor deposition equipment in a semiconductor process, especially using a A device for locally heating gas pipelines to avoid the formation of deposits in the pipelines, thereby extending the maintenance cycle of chemical vapor deposition equipment. 5-2 Background of the Invention: Chemical Vapor Depo, sit ion A method of forming a solid product by reacting a reactant through a chemical reaction, and sinking it on the surface of a wafer to form a thin film. Because the chemical vapor deposition method has a wide range of applications, whether it is conductive, non-conductive, or semiconductor materials Chemical vapor deposition can be used to form a thin film on the wafer surface. Generally speaking, thin films formed by chemical vapor deposition have good crystallinity and material properties. Therefore, chemical vapor deposition has become a conductor manufacturing A basic and important unit process in the field. The process equipment used in chemical vapor deposition, the main package Contains a chamber (Chanjber) for chemical vapor deposition reaction. Through the action of the vacuum system, the pressure in the chamber can be maintained at a specific range and then a cavity is provided for the required deposits. Different reaction gases in the chamber are chemically vapor-deposited. 'TE0S' is a kind of reactants commonly used to form oxide layers. Some of the reactants are t, which are liquid at room temperature. The standard of this paper is applicable to Chinese national standards. Rate (CNS) A4 Specification (2) 0 * 297 cm) --nnm I -1 n I ^ .eJ · n I 1 It tk f— PI I. (Please read the precautions on the back before filling this page) ^ 484 7 A7 B7 V. Description of the invention () (Please read the precautions on the back before filling this page), so these reactants are usually placed in the foaming chamber (Bubbler) during the deposition reaction, and Carrier gas is passed in to increase the partial pressure of the liquid reactants in the gas phase in the container to achieve the purpose of increasing the flow rate of these reactants. In addition, it is also equipped with some pipelines with other functions, such as diluent gas. Rotary pipeline, Purge gas delivery pipeline, etc. It can form a pipeline system in a chemical vapor deposition equipment. Using TMAT as a reactant to form a titanium nitride (T N) film deposited on the wafer surface is a process performed by a chemical vapor deposition equipment. When depositing titanium nitride, TDMAT can be placed in a foaming chamber first. Then, a carrier gas is passed through it, and the environment of the chamber is adjusted at a pressure of about 375 to 40 (TC and 1.5 Torr, so that TDMAT is cracked to form a titanium nitride film, and its reaction formula is as follows: [N (CH3) 2] 2Ti [N (CIl3) 3] 2 — Ti (C) N + (CH3) 2NH + The formed silicon nitride film contains many carbon atoms, so it is usually combined with a processing procedure using radio frequency energy to detach the carbon atoms to form a titanium nitride film with good material properties. The process of printing a titanium nitride film formed by TDMAT cracking by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs often results in particulate pollution in the pipeline system of chemical vapor deposition equipment. After time, the dust contamination in the gas carousel and the chamber also became worse. Generally, when the paper size of this paper is applicable to the SCN Standard (CNS) A4 (210 X 297 s) A7 B7 4484 7 V. Description of the Invention () The vapor deposition equipment has processed 40,000 to 60,000 wafers At that time, all gas transmission pipelines need to be replaced again to improve the micro-contamination situation. When replacing gas transportation pipelines, it is necessary to spend a lot of manpower to perform complicated pipeline replacement work. At the same time, when the pipeline is replaced, the entire chemical vapor deposition equipment is also in an idle state, causing a lot of cost waste. Therefore, in order to reduce the burden of the engineers on the maintenance pipeline system, it is necessary to make a detailed study on the mechanism of process particle formation in chemical vapor deposition equipment, and then propose a set of solutions to overcome the above problems. 5-3 Purpose and Summary of the Invention: The purpose of the present invention is to provide a piping system for chemical vapor deposition equipment, and locally heat the piping system through a heating device to avoid the build-up of the inside of the piping system. Causes the system to be contaminated with fine dust. Another object of the present invention is to make use of such a locally heated pipeline system to avoid the deposits remaining inside the pipeline during the deposition of the nitride film using TMAT. The present invention mainly proposes equipment improvement of a piping system of a chemical vapor deposition equipment. Generally speaking, the pipeline system can send various kinds of process gases into the chamber, and a layer of thin film is formed on the wafer surface. The pipeline system mainly includes the carrier gas pipeline, the diluent gas pipeline, and the reaction gas pipeline. The carrier gas first enters the foaming chamber through the carrier gas delivery pipeline to carry out the reaction gas. Next, use the national paper standard (CNS > A4 Grid (210 × 297 mm)) of the paper-scale method through the diluent gas delivery pipeline. II n I n (---; --n I (Please read the Please fill in this page again), π Printed by the Consumers Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 448 4 A7 B7 'Invention description () Diluent gases sent are mixed' and then transferred to the chamber through the reaction gas delivery pipeline to The chemical vapor deposition reaction is performed. A heating device is arranged outside the diluent gas delivery pipeline, so that the temperature of the diluent gas can be increased, thereby avoiding the condensation of the diluent gas with the reaction gas and causing the reaction gas to condense and attach to the pipeline system. Inside. 5 4 Schematic description: H. ^^^ 1 ^^^ 1 IK n In in ^ it ^ tl- ^^^ 1 I ··-^ j (Please read the precautions on the back before filling this page ) Wei Zhi's work is attached to the internal control tube of the central pipeline. This picture is the partial installation of the pipeline installation in Figure 5. The meaning of the gas chart shows the section of the opposite display of the body. The installed hot dust is shown in Figure 6. Bureau ’s Consumer Cooperative Co., Ltd. prints the detailed instructions for the preparation of the equipment, and the t / i medium-range system guides and semi-pins. The main picture is shown in the picture: 1 This is the pipeline of the chemical vapor deposition equipment in the present invention Schematic diagram of the system 0 No. 2 is a partial three-dimensional schematic diagram of the piping system in the present invention. No. 3 is a schematic diagram of a process particle component for mechanical inspection of a chemical vapor deposition device using a period of time. No. 2 1 The picture shows the saturation vapor pressure curve of TDMAT under different 0® / ware degrees. The paper ruler and the applicable Chinese National Standard (CNS) A4 condition (2IOX297) | 4484 7 A7 B7 V. Description of the invention () Piping system The improvement makes the gasification and deposition process 'avoid the problem of dust pollution in the piping system' and further extends the replacement cycle of the piping system to reduce the burden on the engineering staff and save a lot of manufacturing costs. The following will first introduce a custom Chemical vapor deposition equipment and its pipeline System structure, then use the actual operation results and theoretical analysis of the cause of dust pollution, and finally propose an improved design of the piping system based on the found reasons. Please refer to Figure 1, which shows a TDMAT deposited nitride film The gas flow path in the chemical vapor deposition equipment is representative, and this equipment can be obtained from the machine sold by Taiwan Applied Materials. As shown in the figure, various types of process gases flow in the piping system 102, and are sent to the chamber through the reaction gas transmission line 104 to perform a chemical vapor deposition reaction. When the chemical vapor deposition reaction is performed, the pressure inside the chamber is maintained within a certain range, and the process exhaust gas generated during the reaction can be output through the exhaust pipe 108. When the chamber 108 is not reacting, the pressure between the chamber 108 and the external environment can be balanced by the opening of the ventilation line 192. The piping system 102 includes a plurality of groups of gas transportation pipelines with different functions, such as a heater body transportation pipeline 110, a carrier gas transportation pipeline 126, a treatment gas pipeline (146), and a dilution gas transportation pipeline (162). , 170, and Purge Gas Line 178. The carrier gas (such as helium or inert gas) passes through the carrier gas transfer line 126, and the paper size is in accordance with the Chinese National Standard (CNS) A4 specification (2 丨 OX297 mm). {Please read the precautions on the back first Fill out this page}
，1T 經濟部智惡財產局員工消費合作社印^ 4 484 7 A7 _______B7 五、發明説明（） 流經舒壓閱1 2 8、手動閥1 3 ο、質流控制器丨3 2、氣動閥1 3 4、 舒壓闊1 3 6、氣動閥1 3 8、手動閥1 4 0，而流入發泡室1 4 2 中。舒壓閥1 28、1 36，主要的功能係在調整管件内氣體的 壓力’當其壓力超過一定範圍之後，舒壓間128' 136將會 開啟而釋放管路中多餘的壓力。而氣動閥134'138與手動 間1 3 Ο、1 4 〇 ’則可用以控制載氣輸送管路丨2 6的開啟與關 閉》 經濟部智慧財產局員工消費合作社印製 : --- m ---J 1— I. 一衣 I E ---- (諳先閱讀背面之注意事項再填寫本頁) 當載氣輸入發泡室142之後，會將其中的反應物揮發 之反應氣體帶出，由手動間158、氣動閥156，經過反應氣 體輸送管路104而送入腔室1〇8之中。而稀釋氣體（如氮 氣、氦氣’或其他惰性氣體）則透過質流控制器1 6 6、1 7 4 的調整’並通過稀釋氣體輸送管路！62、17〇，而於反應氣 體輸送管路的起始段1〇4a處與反應氣體相混合，進而調整 反應氣體的濃度，此外’稀釋氣體輸送管路162、170與載 氣輪送管路1 2 6之間則透過分流管路1 6 1相連通，並透過 氣動間160調整分流管路161的開啟與關閉。值得一提的 疋在此實施例中，每一條氣艘輸送管路上都有許多氣動間 或手動闊控制管路的開啟與關閉，而這些閥門並不限定於 特定的種類，諸如習知的氣動閥、手動閥、甚至節流閥都 可依實際運用的需要而做變化設計。 處理氣體輸送管路1 46，則藉由質流控制器1 50的調 整’用以輸送處理氣體（如氫氣）至腔室丨之中以對晶園 本紙张尺度適用中國國家梯準（CNS ) A4規格（210X297公釐） 4484 A7 B7 五、發明説明（） 表面所沈積的薄膜進行處理。這是因為利用TDMAT所進行 之氮化鈦的沈積製程，當晶圓於腔室1〇8中進行沈積製程 之後’會於其表面形成一層含碳量很高的氮化鈦薄膜。此 時’通常會接著於處理氣體輸送管路146中通入處理氣 體’再經由反應氣體輸送管路1〇4輸送至腔室中’以 配合射頻能量對晶圓表面所沈積的薄膜進行處理而除去其 中的碳原子’進而形成材料性質良好的氮化鈦薄膜。 由於TDMAT在常溫下十分容易凝結，因此為了防止氣 態的TDMAT於輸送過裎中冷卻而凝結在管路中，通常會於 載氣輪送管路126、反應氣體輸送管路104、以及稀釋氣體 輸送管路1 62、1 70與發泡室1 42相連接處’以木質或金屬 材質之加熱箱144包圍出一塊局部受熱的區域。而加熱氣 趙（如氤氣）會由加熱氣體輸入管路110流經電熱器124而 吹入加熱箱144中。一般而言，位於發泡室中的ΤΜΛΤ會 加熱到約5CTC的溫度，而加熱箱144中的各式氣體管路的 溫度則會維持在6〇°c左右。至於清掃氣體輸送管路1 78 ’ 則可經由質流控制器1 8 2的調整，輸送清掃氣體（如氬氣） 至腔室1 08中，以除去殘留的有毒氣體，以利其維修保養 的工作。 第2圖則顯示了管路系統1 〇 2中部份載氣輸送官路 126、處理氣體輸送管路146、稀釋氣體輸送管路162、170 立體結構示意圖，以配合第1圖更清楚描繪各個管路 '闊 本纸張尺度適用中國國家標準（CNS)A4規格（2t〇X297公嫠） (請先閱讀背面之注意事項再填寫本頁}, 1T Printed by the Consumer Cooperatives of the Intellectual Property Office of the Ministry of Economic Affairs ^ 4 484 7 A7 _______B7 V. Description of the invention () Flow through pressure reading 1 2 8, manual valve 1 3 ο, mass flow controller 丨 3 2, pneumatic valve 1 3 4, Relaxing pressure 1 3 6, Pneumatic valve 1 3 8, Manual valve 1 4 0, and flows into the foaming chamber 1 4 2. The main function of the pressure relief valves 1 28 and 1 36 is to adjust the pressure of the gas in the pipe fittings. When the pressure exceeds a certain range, the pressure relief chamber 128 '136 will open and release the excess pressure in the pipeline. The pneumatic valve 134'138 and the manual room 1 3 〇, 1 4 〇 'can be used to control the opening and closing of the carrier gas pipeline 丨 2 6 "Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs: --- m- --J 1— I. Yiyi IE ---- (谙 Please read the precautions on the back before filling in this page) After the carrier gas is input into the foaming chamber 142, it will take out the reactive gas in which the reactants volatilize. The manual chamber 158 and the pneumatic valve 156 are sent into the chamber 108 through the reaction gas delivery pipe 104. The diluent gas (such as nitrogen, helium ’or other inert gases) passes through the adjustment of the mass flow controller 1 6 6 and 1 7 4’ and passes through the diluent gas delivery pipeline! 62, 17〇, and mixed with the reaction gas at the beginning section 104a of the reaction gas transmission pipeline, and then adjust the concentration of the reaction gas, in addition, 'diluted gas transmission pipelines 162, 170 and carrier gas pipeline 1 2 6 communicate with each other through the shunt pipe 1 6 1, and the opening and closing of the shunt pipe 161 is adjusted through the pneumatic chamber 160. It is worth mentioning that in this embodiment, each gas vessel transportation pipeline has many pneumatic chambers or manual control opening and closing of the pipelines, and these valves are not limited to a specific type, such as the conventional pneumatic Valves, manual valves, and even throttle valves can be designed according to actual needs. The processing gas conveying pipeline 1 46 is adjusted by the mass flow controller 1 50 'for conveying the processing gas (such as hydrogen) to the chamber 丨 to apply the China National Standard for Laminated Paper (CNS) A4 specification (210X297 mm) 4484 A7 B7 V. Description of the invention () The film deposited on the surface is treated. This is because the titanium nitride deposition process performed by TDMAT, when the wafer is deposited in the chamber 108, a titanium nitride film with a high carbon content is formed on its surface. At this time, 'the processing gas is usually passed into the processing gas conveying pipeline 146' and then conveyed into the chamber through the reaction gas conveying pipeline 104 to match the radio frequency energy to process the thin film deposited on the wafer surface. The carbon atoms' are removed to form a titanium nitride film with good material properties. Because TDMAT is very easy to condense at normal temperature, in order to prevent the gaseous TDMAT from condensing in the pipeline during transportation, it is usually condensed in the carrier gas pipeline 126, the reaction gas pipeline 104, and the diluent gas pipeline. Where the pipes 1 62, 1 70 are connected to the foaming chamber 1 42, a wood or metal heating box 144 surrounds a locally heated area. The heating gas (such as radon gas) flows from the heating gas input pipe 110 through the electric heater 124 and is blown into the heating box 144. Generally speaking, the TMΔT located in the foaming chamber is heated to a temperature of about 5 CTC, and the temperature of various gas pipelines in the heating box 144 is maintained at about 60 ° C. As for the sweeping gas conveying pipe 1 78 ', the sweeping gas (such as argon) can be delivered to the chamber 1 08 through the adjustment of the mass flow controller 1 8 2 to remove the remaining toxic gas for its maintenance. jobs. Figure 2 shows the three-dimensional structure diagrams of the partial carrier gas transportation official road 126, processing gas transportation pipeline 146, and diluent gas transportation pipelines 162 and 170 in the pipeline system 102. The paper size of the pipe is applicable to the Chinese National Standard (CNS) A4 specification (2t〇X297 cm) (Please read the precautions on the back before filling this page}
-丁 ---P 經濟部智慧財產局員工消費合作社印製 4484 1 A7 B7 經 部 智 慧 財 產 局 五、發明說明（ 門、與質流控制器的相對位置。 接著參閱第3圖，顯示了當上述之化學氣相沈積設備 使用一段時間後，於其中腔室所測得的微塵數目。一般而 言’測試腔室中微塵汙染情形可利用機械式偵測 (Mechanical)，或線上測試（in_Fnm)等兩種不同的模式得 到。所謂的機械式偵測’係指在腔室不含有任何晶圊的情 況下’單純通入製程氣體以偵測微塵的方法。而線上測試 則是將監控晶圓至入腔室中，以模擬實際製程情況而偵測 微塵數目的方法。 從第3圖中可以得知，當化學氣相沈積設備使用一段 時間之後，腔室中即會產生大量的微塵。由於這些微塵是 利用機械式憤測法所測得的情況，故意咮著在未實際以晶 圓進行化學氣相沈積製程下，化學氣相沈積設備的管路系 統中仍然具有十分嚴重的汗染情況。因此’可以推定其中 必然有部份管路受到微塵的汙染。而將第1圖中所顯示的 管路系統各段管路拆開之後，如第4圖所示，發現在氣動 閥160的内徑502中附著了 一層氮化鈦的附著物504»而 此一發現也證實了管路系統於長期使用之後所遭受汙染的 情形。 利用感測器對氣動閥1 6 0 (如第1圖所示）處的局部溫 度進監測後可以發現，該處的溫度僅較5 CTC略為高出一 (請先閱讀背面之注意事項再填寫本頁) --- -----訂--------線 消 費 合 A 社 印 % 本纸張尺度適用中國國家標準（CNSM4規格（210 X 297公釐） 經濟部智祛財產局員工消货合作社印忽 4 4 8 4 7 〃 at B7 五、發明說明（） 點，而非如原先管路系統所預期的約6 0 °C左右。請參閱第 5圖’當TDHAT的溫度為50°C時，其飽和蒸氣壓約為 0, 55Torr。易言之，在此一溫度下，TDMAT將十分容易凝 結而附著於氣動閥160的内徑上。而由於TDMAT於常溫中 會缓慢的裂解而形成氮化鈦的附著物504(如第4圖所示） 而造成汙染。至於造成氣動閥160附近局部溫度過低的主 要原因則是，透過稀釋氣體輸送管路162、170(見第1圖） 所輸送的稀釋氣體（如氮氣、氦氣）的溫度係處於室溫之 下。當這些稀釋氣體與氣態的TDMAT接觸之後，會造成 TDMAT的溫度下降，而凝結於氣動閥1 6()的内徑之中。 接著參閱第6圖，顯示了本發明中所提出之經過改良 的管路系統。如圖中所示，稀釋氣體輸送管路162' 170 分別透過固定座608、604固定於管路固定板601上，並 透過六角螺帽606、602將手動閥605、601安裝於稀釋氣 體輸送管路162' 170之上。為了提高稀釋氣體的溫度， 以避免造成TDMAT氣體的凝結，本發明於稀釋氣體輸送管 路162、丨70的局部區域示設置了加熱裝置616、614。如 此加熱裝置616、6U在稀釋氣體在通過手動閥605、601 之前’即可提高提其溫度，進而避免筆因於TDMAT氣體的 溫度下降而產生凝結的現象。 在本實施例中’加熱裝置616、614係為一種加熱帶 (Heat Tape)。所謂的加熱帶乃是一種利用石棉包覆電阻 本紙張尺度適用中國國家標準（CNS)A4規格（2]〇χ 297公笔） ------1 I ----I I I I---( (請先閱讀背面之注意事項再填寫本頁) 4 484 Α7 Β7 五、發明說明（) 絲的裝置’當使用加熱帶時，僅需供給電源使其產生熱量 而對稀釋氣體輸送管路加熱。此外，本實施例中係將加熱 裝置616、614設置於手動閥601、605的上方，主要的考 量為該處之稀釋氣體輸送管路162、17〇的長度較長，因 此可以得到較好的加熱效果。然而加熱裝置6丨6、6 1 4亦 可以安置於手動閥601、605下方的位置，至於其加熱效 果的問題’則可透過調整加熱裝置6〗6、614的功率而獲 得解決。最後本發明僅於稀釋氣體輪送管路丨6 2、；ι 7 〇外 部增設加熱裝置，而不增設於處理氣體輸送管路146外 部，主要係考量處理氣體（如氫氣）的安拿性。然而配合一 些適當的安全性考量，以可於處理氣體輸送管路146的外 部設置加熱裝置。 本發明以-較佳實施例說明如上，僅用於藉以幫助了 解本發明之實施，非用以限定本發明之精神，而熟悉此領 域技藝者於領悟本發明之精神後，在不脫離本發明之精神 範圍内’當可做些許更動湖飾及等同之變化替換，其專利 保護範圍當視後附之專利申請範圍及其等同領域而定。 — — — — — — — I I--.丨！ 1 I I 丨訂 — 111111 轉 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製-丁 --- P Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives 4484 1 A7 B7 Economics Department Intellectual Property Bureau V. Description of Invention (Door, Relative Position to Mass Flow Controller. Then refer to Figure 3, which shows when After using the above-mentioned chemical vapor deposition equipment for a period of time, the number of dust particles measured in the chamber. In general, the dust pollution situation in the test chamber can be mechanically detected (Mechanical), or tested online (in_Fnm) Obtained in two different modes. The so-called "mechanical detection" refers to the method of simply passing in the process gas to detect dust when the chamber does not contain any crystals. The online test is to monitor the wafer. The method of detecting the number of dust particles in the chamber by simulating the actual process conditions. As can be seen from Figure 3, when the chemical vapor deposition equipment is used for a period of time, a large amount of dust particles will be generated in the chamber. These dust particles are measured by a mechanical method, and deliberately dwell in the pipeline system of the chemical vapor deposition equipment without actually performing a chemical vapor deposition process on a wafer. However, there is a very serious sweating situation. Therefore, it can be presumed that some of the pipes must be contaminated by dust. After disassembling the pipes of each section of the pipe system shown in Figure 1, as shown in Figure 4 As shown, a layer of titanium nitride attachment 504 was found in the inner diameter 502 of the pneumatic valve 160. This discovery also confirmed the contamination of the piping system after long-term use. After monitoring the local temperature at 1 6 0 (as shown in Figure 1), it can be found that the temperature there is only slightly higher than 5 CTC (please read the precautions on the back before filling this page) ---- ---- Order -------- Line Consumption Co., Ltd. Social Printing% This paper size applies to Chinese national standards (CNSM4 specification (210 X 297 mm)) 4 4 8 4 7 〃 at B7 V. Description of the invention () point, instead of about 60 ° C as expected by the original piping system. Please refer to Figure 5 'When the temperature of TDHAT is 50 ° C, its The saturated vapor pressure is about 0, 55 Torr. In other words, at this temperature, TDMAT will easily condense and attach. Focus on the inner diameter of the pneumatic valve 160. And because TDMAT will slowly crack at normal temperature to form the titanium nitride attachment 504 (as shown in Figure 4) and cause pollution. As a result, the local temperature near the pneumatic valve 160 is too high. The main reason for the low temperature is that the temperature of the diluent gas (such as nitrogen and helium) transported through the diluent gas delivery lines 162, 170 (see Figure 1) is below room temperature. After TDMAT contact, it will cause the temperature of TDMAT to drop and condense in the inner diameter of the pneumatic valve 16 (). Then referring to FIG. 6, it shows the improved piping system proposed in the present invention. As shown in the figure, the diluent gas delivery pipe 162 '170 is fixed to the pipe fixing plate 601 through the fixing seats 608 and 604 respectively, and the manual valves 605 and 601 are installed on the diluent gas delivery pipe through the hexagonal nuts 606 and 602. Above road 162 '170. In order to increase the temperature of the diluent gas to avoid the condensation of the TDMAT gas, the present invention shows that heating devices 616 and 614 are provided in the partial areas of the diluent gas delivery pipes 162 and 70. In this way, the heating device 616, 6U can raise the temperature of the diluent gas before passing through the manual valves 605, 601, thereby preventing the pen from condensing due to the temperature drop of the TDMAT gas. In this embodiment, the 'heating devices 616 and 614 are heat tapes. The so-called heating belt is a kind of asbestos-covered resistor. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (2) 0 × 297 pen. ------ 1 I ---- III I --- ((Please read the precautions on the back before filling this page) 4 484 Α7 Β7 V. Description of the invention () When using a heating belt, only the power supply is required to generate heat and heat the diluent gas delivery pipeline In addition, in this embodiment, the heating devices 616 and 614 are arranged above the manual valves 601 and 605. The main consideration is that the lengths of the diluent gas delivery pipes 162 and 170 are longer, so it can be better. Heating effect. However, the heating device 6 丨 6, 6 1 4 can also be placed under the manual valve 601, 605. As for the problem of its heating effect, it can be solved by adjusting the power of the heating device 6〗 6, 614. In the end, the present invention only adds a heating device to the diluent gas rotation pipeline 6 2; ι 7 〇 does not add a heating device outside the processing gas delivery pipeline 146, mainly considering the availability of the processing gas (such as hydrogen) . However with some proper security In consideration of the nature, a heating device can be provided outside the processing gas delivery pipeline 146. The present invention is described above with the preferred embodiment, and is only used to help understand the implementation of the present invention, and is not intended to limit the spirit of the present invention, and After understanding the spirit of the present invention, those skilled in this field will not be allowed to deviate from the spirit of the present invention, but can be replaced with some changes and equivalent changes. The scope of patent protection shall be determined by the scope of the attached patent application and It depends on the equivalent area. — — — — — — — — I I--. 丨! 1 II 丨 Order — 111111 rpm (Please read the notes on the back before filling this page) Printed by the Intellectual Property Bureau Employee Consumer Cooperatives
U 本紙張尺度適用111國國家標準（CNSM4規格（210 X 297公^U This paper size applies to national standards of 111 countries (CNSM4 specification (210 X 297 cm ^