JP6434965B2 - 薄膜堆積監視 - Google Patents
薄膜堆積監視 Download PDFInfo
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- JP6434965B2 JP6434965B2 JP2016519366A JP2016519366A JP6434965B2 JP 6434965 B2 JP6434965 B2 JP 6434965B2 JP 2016519366 A JP2016519366 A JP 2016519366A JP 2016519366 A JP2016519366 A JP 2016519366A JP 6434965 B2 JP6434965 B2 JP 6434965B2
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- 238000000427 thin-film deposition Methods 0.000 title claims description 31
- 238000012544 monitoring process Methods 0.000 title claims description 17
- 239000013078 crystal Substances 0.000 claims description 108
- 238000000034 method Methods 0.000 claims description 32
- 239000010453 quartz Substances 0.000 claims description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 23
- 238000000151 deposition Methods 0.000 claims description 22
- 230000008021 deposition Effects 0.000 claims description 22
- 230000008859 change Effects 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 8
- 238000001514 detection method Methods 0.000 claims description 7
- 238000005259 measurement Methods 0.000 description 24
- 230000015654 memory Effects 0.000 description 14
- 238000010586 diagram Methods 0.000 description 13
- 238000013500 data storage Methods 0.000 description 11
- 238000012545 processing Methods 0.000 description 9
- 230000006870 function Effects 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 7
- 238000004891 communication Methods 0.000 description 6
- 238000004590 computer program Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 210000004907 gland Anatomy 0.000 description 2
- 238000001453 impedance spectrum Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
- C23C14/546—Controlling the film thickness or evaporation rate using measurement on deposited material using crystal oscillators
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
- G01B7/06—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness
- G01B7/063—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using piezoelectric resonators
- G01B7/066—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using piezoelectric resonators for measuring thickness of coating
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R25/00—Arrangements for measuring phase angle between a voltage and a current or between voltages or currents
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Physical Vapour Deposition (AREA)
- Length Measuring Devices Characterised By Use Of Acoustic Means (AREA)
- Measurement Of Resistance Or Impedance (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Description
PM 位相変調
FM 周波数変調
AM 振幅変調
DDS ダイレクト・デジタル・シンセサイザ
PM又はFMDSS 位相変調又は周波数変調されたダイレクトデジタル合成信号
Claims (14)
- 堆積チャンバ内の薄膜堆積を監視するシステムであって、
接地された前記堆積チャンバ内に配置された水晶振動子と、
1Hzから1000Hzまでの範囲内の低周波信号と4MHzから7MHzまでの範囲内の高周波信号とを用いて変調信号を生成するシンセサイザと、
復調器と、
前記シンセサイザと、ケーブルを介して前記水晶振動子と、前記復調器とに接続され、前記変調信号の方向性結合器として動作するTネットワークと、
位相検出器と、を含み、
前記水晶振動子は前記シンセサイザによって生成された前記変調信号のコンポーネントを吸収し、それにより前記復調器に振幅変調信号が入力され、前記復調器は前記振幅変調信号の包絡線を生成し、
前記位相検出器は前記薄膜堆積の厚さを決定するために前記振幅変調信号の包絡線の位相を決定し、
前記振幅変調信号の前記包絡線の位相は、前記水晶振動子が共振状態にあるときに前記シンセサイザによって生成された前記振幅変調信号の前記低周波信号と同位相状態であることを特徴とするシステム。 - 前記シンセサイザによって生成された前記変調信号は周波数変調信号であることを特徴とする請求項1に記載のシステム。
- 前記シンセサイザによって生成された前記変調信号は位相変調信号であることを特徴とする請求項1に記載のシステム。
- 前記シンセサイザによって生成された前記変調信号の変調指数は、共振時に前記シンセサイザによって生成された前記変調信号の周波数が前記水晶振動子の共振周波数と一致するように選択されることを特徴とする請求項1に記載のシステム。
- 前記シンセサイザによって生成された前記変調信号の周波数は、前記水晶振動子のコンダクタンスがピークに達するように選択されることを特徴とする請求項1に記載のシステム。
- 前記ケーブルの長さは前記薄膜堆積の検出を減少させないことを特徴とする請求項1に記載のシステム。
- 前記水晶振動子の共振周波数は、薄膜が前記水晶振動子の表面に堆積するにつれて変化し、
前記共振周波数における変化は、前記薄膜堆積の速度を検出するために監視されることを特徴とする請求項1に記載のシステム。 - 堆積チャンバ内の薄膜堆積を監視する方法であって、
シンセサイザによって1Hzから1000Hzまでの範囲内で選択された低周波信号と4MHzから7MHzまでの範囲内で選択された高周波信号とを用いて変調信号を生成するステップと、
前記堆積チャンバ内に配置された水晶振動子を接地するステップと、
前記シンセサイザによって生成された前記変調信号のコンポーネントから電流を引き出す前記水晶振動子によって振幅変調信号を生成するステップと、
前記振幅変調信号を復調して前記振幅変調信号の包絡線を生成するステップと、
前記薄膜堆積の厚さを決定するために前記包絡線の位相を測定するステップと、を含み、
前記変調信号の前記低周波信号の位相に等しい前記包絡線の位相は、前記水晶振動子が当該選択された高周波信号で前記薄膜堆積の厚さを与える共振状態であることを示すことを特徴とする方法。 - 前記シンセサイザによって生成された前記変調信号は周波数変調信号であることを特徴とする請求項8に記載の方法。
- 前記シンセサイザによって生成された前記変調信号は位相変調信号であることを特徴とする請求項8に記載の方法。
- 前記シンセサイザによって生成された前記変調信号の前記高周波信号は前記薄膜堆積の厚さを与える前記水晶振動子の共振周波数と一致するように選択されることを特徴とする請求項8に記載の方法。
- ケーブルは、Tネットワークにおいて、前記堆積チャンバ内に配置された前記水晶振動子と、前記シンセサイザと、前記振幅変調信号を復調する復調器とに接続し、
前記シンセサイザによって生成された前記変調信号の前記高周波信号は、前記ケーブルの長さが前記薄膜堆積の厚さ検出に影響を与えないように選択されることを特徴とする請求項8に記載の方法。 - 前記シンセサイザによって生成された前記変調信号は、水晶のコンダクタンスがピークに達するように選択されることを特徴とする請求項8に記載の方法。
- 前記薄膜堆積の厚さを監視するために前記変調信号の前記高周波信号を変化させるステップをさらに含むことを特徴とする請求項8に記載の方法。
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US201361886333P | 2013-10-03 | 2013-10-03 | |
US61/886,333 | 2013-10-03 | ||
PCT/US2014/059042 WO2015051250A1 (en) | 2013-10-03 | 2014-10-03 | Monitoring thin film deposition |
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US (2) | US10704150B2 (ja) |
JP (1) | JP6434965B2 (ja) |
KR (1) | KR102270900B1 (ja) |
CN (1) | CN105917023B (ja) |
WO (1) | WO2015051250A1 (ja) |
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US9971341B2 (en) | 2014-01-06 | 2018-05-15 | Globalfoundries Inc. | Crystal oscillator and the use thereof in semiconductor fabrication |
CN104182745B (zh) * | 2014-08-15 | 2017-09-22 | 深圳市汇顶科技股份有限公司 | 指纹感应信号的处理方法、系统及指纹识别终端 |
US11335575B2 (en) * | 2017-08-25 | 2022-05-17 | Inficon, Inc. | Unconsumed precursor monitoring |
KR102081198B1 (ko) * | 2018-01-29 | 2020-04-28 | 주식회사 선익시스템 | 증착막 두께 측정 모듈의 접지 구조 |
KR102081197B1 (ko) * | 2018-01-29 | 2020-02-25 | 주식회사 선익시스템 | 증착막 두께 측정 모듈의 접지 구조 |
JP7102588B1 (ja) | 2021-07-01 | 2022-07-19 | 株式会社アルバック | センサ装置 |
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- 2014-10-03 WO PCT/US2014/059042 patent/WO2015051250A1/en active Application Filing
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US20200325580A1 (en) | 2020-10-15 |
US20160215397A1 (en) | 2016-07-28 |
KR102270900B1 (ko) | 2021-07-02 |
JP2016535246A (ja) | 2016-11-10 |
CN105917023A (zh) | 2016-08-31 |
CN105917023B (zh) | 2019-05-10 |
KR20160065110A (ko) | 2016-06-08 |
WO2015051250A1 (en) | 2015-04-09 |
US10704150B2 (en) | 2020-07-07 |
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