JP2020530666A5 - - Google Patents

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Publication number
JP2020530666A5
JP2020530666A5 JP2020530452A JP2020530452A JP2020530666A5 JP 2020530666 A5 JP2020530666 A5 JP 2020530666A5 JP 2020530452 A JP2020530452 A JP 2020530452A JP 2020530452 A JP2020530452 A JP 2020530452A JP 2020530666 A5 JP2020530666 A5 JP 2020530666A5
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JP
Japan
Prior art keywords
laser
epitaxial structure
microlens
aperture
back surface
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Application number
JP2020530452A
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English (en)
Japanese (ja)
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JP2020530666A (ja
JP7418328B2 (ja
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Priority claimed from PCT/US2018/046556 external-priority patent/WO2019033120A1/en
Publication of JP2020530666A publication Critical patent/JP2020530666A/ja
Publication of JP2020530666A5 publication Critical patent/JP2020530666A5/ja
Application granted granted Critical
Publication of JP7418328B2 publication Critical patent/JP7418328B2/ja
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JP2020530452A 2017-08-11 2018-08-13 ハイパワーのレーザグリッド構造 Active JP7418328B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762543972P 2017-08-11 2017-08-11
US62/543,972 2017-08-11
PCT/US2018/046556 WO2019033120A1 (en) 2017-08-11 2018-08-13 HIGH POWER LASER GRID STRUCTURE

Publications (3)

Publication Number Publication Date
JP2020530666A JP2020530666A (ja) 2020-10-22
JP2020530666A5 true JP2020530666A5 (enExample) 2021-09-24
JP7418328B2 JP7418328B2 (ja) 2024-01-19

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Family Applications (1)

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JP2020530452A Active JP7418328B2 (ja) 2017-08-11 2018-08-13 ハイパワーのレーザグリッド構造

Country Status (5)

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EP (1) EP3665753A4 (enExample)
JP (1) JP7418328B2 (enExample)
AU (1) AU2018314281B2 (enExample)
CA (1) CA3072763A1 (enExample)
WO (1) WO2019033120A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7583266B2 (ja) 2021-02-12 2024-11-14 日亜化学工業株式会社 発光装置
GB2614300B (en) * 2021-12-23 2025-02-19 Toshiba Kk A photon source and method of fabricating a photon source
US20250062597A1 (en) * 2023-08-17 2025-02-20 Ii-Vi Delaware, Inc. Semiconductor Laser Assembly with Thin Film Lithium Compound Waveguide
US20250347781A1 (en) * 2024-05-08 2025-11-13 Aurora Operations, Inc. Manufacturing Process for Semiconductor Optical Device for LIDAR Sensor System

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5978408A (en) * 1997-02-07 1999-11-02 Xerox Corporation Highly compact vertical cavity surface emitting lasers
US6597713B2 (en) 1998-07-22 2003-07-22 Canon Kabushiki Kaisha Apparatus with an optical functional device having a special wiring electrode and method for fabricating the same
JP4295870B2 (ja) 1999-09-14 2009-07-15 浜松ホトニクス株式会社 レーザ装置
US20060023757A1 (en) * 2004-07-30 2006-02-02 Aram Mooradian Apparatus, system, and method for wavelength conversion of mode-locked extended cavity surface emitting semiconductor lasers
JP2007173393A (ja) * 2005-12-20 2007-07-05 Denso Corp レーザ装置
US10038304B2 (en) * 2009-02-17 2018-07-31 Trilumina Corp. Laser arrays for variable optical properties
US10244181B2 (en) * 2009-02-17 2019-03-26 Trilumina Corp. Compact multi-zone infrared laser illuminator
US8979338B2 (en) * 2009-12-19 2015-03-17 Trilumina Corp. System for combining laser array outputs into a single beam carrying digital data
WO2012059864A1 (en) * 2010-11-03 2012-05-10 Koninklijke Philips Electronics N.V. Optical element for vertical external-cavity surface-emitting laser
DE102012203672B4 (de) 2012-03-08 2018-03-15 Osram Oled Gmbh Optoelektronisches Bauelement
JP6339665B2 (ja) 2013-04-22 2018-06-06 トリルミナ コーポレーション 高周波動作のための光電子装置のマルチビームアレイ用マイクロレンズ
AU2016298390B2 (en) 2015-07-30 2021-09-02 Optipulse Inc. Rigid high power and high speed lasing grid structures
US9946089B2 (en) * 2015-10-21 2018-04-17 Princeton Optronics, Inc. Generation of coded structured light patterns using VCSEL arrays

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