JP7418328B2 - ハイパワーのレーザグリッド構造 - Google Patents

ハイパワーのレーザグリッド構造 Download PDF

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JP7418328B2
JP7418328B2 JP2020530452A JP2020530452A JP7418328B2 JP 7418328 B2 JP7418328 B2 JP 7418328B2 JP 2020530452 A JP2020530452 A JP 2020530452A JP 2020530452 A JP2020530452 A JP 2020530452A JP 7418328 B2 JP7418328 B2 JP 7418328B2
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laser
stack
array
region
lasing
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JP2020530666A5 (enExample
JP2020530666A (ja
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ジョーセフ，ジョン・リチャード
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オプティパルス・インコーポレイテッド
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
    • G02B19/0052—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a laser diode
    • G02B19/0057—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a laser diode in the form of a laser diode array, e.g. laser diode bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1021—Coupled cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1025—Extended cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18388—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2020530452A 2017-08-11 2018-08-13 ハイパワーのレーザグリッド構造 Active JP7418328B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762543972P 2017-08-11 2017-08-11
US62/543,972 2017-08-11
PCT/US2018/046556 WO2019033120A1 (en) 2017-08-11 2018-08-13 HIGH POWER LASER GRID STRUCTURE

Publications (3)

Publication Number Publication Date
JP2020530666A JP2020530666A (ja) 2020-10-22
JP2020530666A5 JP2020530666A5 (enExample) 2021-09-24
JP7418328B2 true JP7418328B2 (ja) 2024-01-19

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JP2020530452A Active JP7418328B2 (ja) 2017-08-11 2018-08-13 ハイパワーのレーザグリッド構造

Country Status (5)

Country Link
EP (1) EP3665753A4 (enExample)
JP (1) JP7418328B2 (enExample)
AU (1) AU2018314281B2 (enExample)
CA (1) CA3072763A1 (enExample)
WO (1) WO2019033120A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7583266B2 (ja) 2021-02-12 2024-11-14 日亜化学工業株式会社 発光装置
GB2614300B (en) * 2021-12-23 2025-02-19 Toshiba Kk A photon source and method of fabricating a photon source
US20250062597A1 (en) * 2023-08-17 2025-02-20 Ii-Vi Delaware, Inc. Semiconductor Laser Assembly with Thin Film Lithium Compound Waveguide
US20250347781A1 (en) * 2024-05-08 2025-11-13 Aurora Operations, Inc. Manufacturing Process for Semiconductor Optical Device for LIDAR Sensor System

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001083460A (ja) 1999-09-14 2001-03-30 Hamamatsu Photonics Kk レーザ装置
US20030026303A1 (en) 1998-07-22 2003-02-06 Toshihiko Ouchi Apparatus with an optical functional device having a special wiring electrode and method for fabricating the same
JP2007173393A (ja) 2005-12-20 2007-07-05 Denso Corp レーザ装置
JP2013541854A (ja) 2010-11-03 2013-11-14 コーニンクレッカ フィリップス エヌ ヴェ 垂直外部キャビティ面発光レーザに対する光学素子
US20140079088A1 (en) 2009-12-19 2014-03-20 Trilumina Corporation System and method for combining laser arrays for digital outputs
US20150171375A1 (en) 2012-03-08 2015-06-18 Osram Opto Semiconductors Gmbh Optoelectronic component
US20160164261A1 (en) 2009-02-17 2016-06-09 Trilumina Corp. Compact multi-zone infrared laser illuminator
JP2016519436A (ja) 2013-04-22 2016-06-30 トリルミナ コーポレーション 高周波動作のための光電子装置のマルチビームアレイ用マイクロレンズ
US20170033535A1 (en) 2015-07-30 2017-02-02 Optipulse Inc. Rigid High Power and High Speed Lasing Grid Structures

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5978408A (en) * 1997-02-07 1999-11-02 Xerox Corporation Highly compact vertical cavity surface emitting lasers
US20060023757A1 (en) * 2004-07-30 2006-02-02 Aram Mooradian Apparatus, system, and method for wavelength conversion of mode-locked extended cavity surface emitting semiconductor lasers
US10038304B2 (en) * 2009-02-17 2018-07-31 Trilumina Corp. Laser arrays for variable optical properties
US9946089B2 (en) * 2015-10-21 2018-04-17 Princeton Optronics, Inc. Generation of coded structured light patterns using VCSEL arrays

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030026303A1 (en) 1998-07-22 2003-02-06 Toshihiko Ouchi Apparatus with an optical functional device having a special wiring electrode and method for fabricating the same
JP2001083460A (ja) 1999-09-14 2001-03-30 Hamamatsu Photonics Kk レーザ装置
JP2007173393A (ja) 2005-12-20 2007-07-05 Denso Corp レーザ装置
US20160164261A1 (en) 2009-02-17 2016-06-09 Trilumina Corp. Compact multi-zone infrared laser illuminator
US20140079088A1 (en) 2009-12-19 2014-03-20 Trilumina Corporation System and method for combining laser arrays for digital outputs
JP2013541854A (ja) 2010-11-03 2013-11-14 コーニンクレッカ フィリップス エヌ ヴェ 垂直外部キャビティ面発光レーザに対する光学素子
US20150171375A1 (en) 2012-03-08 2015-06-18 Osram Opto Semiconductors Gmbh Optoelectronic component
JP2016519436A (ja) 2013-04-22 2016-06-30 トリルミナ コーポレーション 高周波動作のための光電子装置のマルチビームアレイ用マイクロレンズ
US20170033535A1 (en) 2015-07-30 2017-02-02 Optipulse Inc. Rigid High Power and High Speed Lasing Grid Structures

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AU2018314281A1 (en) 2020-04-02
EP3665753A4 (en) 2021-04-21
EP3665753A1 (en) 2020-06-17
JP2020530666A (ja) 2020-10-22
AU2018314281B2 (en) 2024-02-01
WO2019033120A1 (en) 2019-02-14
CA3072763A1 (en) 2019-02-14

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