CA3072763A1 - High power laser grid structure - Google Patents
High power laser grid structure Download PDFInfo
- Publication number
- CA3072763A1 CA3072763A1 CA3072763A CA3072763A CA3072763A1 CA 3072763 A1 CA3072763 A1 CA 3072763A1 CA 3072763 A CA3072763 A CA 3072763A CA 3072763 A CA3072763 A CA 3072763A CA 3072763 A1 CA3072763 A1 CA 3072763A1
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- CA
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- Prior art keywords
- laser
- micro
- emitting
- epitaxial structure
- lens
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
- H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
- G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
- G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
- G02B19/0052—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a laser diode
- G02B19/0057—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a laser diode in the form of a laser diode array, e.g. laser diode bar
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1021—Coupled cavities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1025—Extended cavities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18341—Intra-cavity contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
- H01S5/18388—Lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
- H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762543972P | 2017-08-11 | 2017-08-11 | |
| US62/543,972 | 2017-08-11 | ||
| PCT/US2018/046556 WO2019033120A1 (en) | 2017-08-11 | 2018-08-13 | HIGH POWER LASER GRID STRUCTURE |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA3072763A1 true CA3072763A1 (en) | 2019-02-14 |
Family
ID=65272675
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA3072763A Pending CA3072763A1 (en) | 2017-08-11 | 2018-08-13 | High power laser grid structure |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP3665753A4 (enExample) |
| JP (1) | JP7418328B2 (enExample) |
| AU (1) | AU2018314281B2 (enExample) |
| CA (1) | CA3072763A1 (enExample) |
| WO (1) | WO2019033120A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7583266B2 (ja) | 2021-02-12 | 2024-11-14 | 日亜化学工業株式会社 | 発光装置 |
| GB2614300B (en) * | 2021-12-23 | 2025-02-19 | Toshiba Kk | A photon source and method of fabricating a photon source |
| US20250062597A1 (en) * | 2023-08-17 | 2025-02-20 | Ii-Vi Delaware, Inc. | Semiconductor Laser Assembly with Thin Film Lithium Compound Waveguide |
| US20250347781A1 (en) * | 2024-05-08 | 2025-11-13 | Aurora Operations, Inc. | Manufacturing Process for Semiconductor Optical Device for LIDAR Sensor System |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5978408A (en) * | 1997-02-07 | 1999-11-02 | Xerox Corporation | Highly compact vertical cavity surface emitting lasers |
| US6597713B2 (en) | 1998-07-22 | 2003-07-22 | Canon Kabushiki Kaisha | Apparatus with an optical functional device having a special wiring electrode and method for fabricating the same |
| JP4295870B2 (ja) | 1999-09-14 | 2009-07-15 | 浜松ホトニクス株式会社 | レーザ装置 |
| US20060023757A1 (en) * | 2004-07-30 | 2006-02-02 | Aram Mooradian | Apparatus, system, and method for wavelength conversion of mode-locked extended cavity surface emitting semiconductor lasers |
| JP2007173393A (ja) * | 2005-12-20 | 2007-07-05 | Denso Corp | レーザ装置 |
| US10038304B2 (en) * | 2009-02-17 | 2018-07-31 | Trilumina Corp. | Laser arrays for variable optical properties |
| US10244181B2 (en) * | 2009-02-17 | 2019-03-26 | Trilumina Corp. | Compact multi-zone infrared laser illuminator |
| US8979338B2 (en) * | 2009-12-19 | 2015-03-17 | Trilumina Corp. | System for combining laser array outputs into a single beam carrying digital data |
| WO2012059864A1 (en) * | 2010-11-03 | 2012-05-10 | Koninklijke Philips Electronics N.V. | Optical element for vertical external-cavity surface-emitting laser |
| DE102012203672B4 (de) | 2012-03-08 | 2018-03-15 | Osram Oled Gmbh | Optoelektronisches Bauelement |
| JP6339665B2 (ja) | 2013-04-22 | 2018-06-06 | トリルミナ コーポレーション | 高周波動作のための光電子装置のマルチビームアレイ用マイクロレンズ |
| AU2016298390B2 (en) | 2015-07-30 | 2021-09-02 | Optipulse Inc. | Rigid high power and high speed lasing grid structures |
| US9946089B2 (en) * | 2015-10-21 | 2018-04-17 | Princeton Optronics, Inc. | Generation of coded structured light patterns using VCSEL arrays |
-
2018
- 2018-08-13 EP EP18843018.5A patent/EP3665753A4/en active Pending
- 2018-08-13 WO PCT/US2018/046556 patent/WO2019033120A1/en not_active Ceased
- 2018-08-13 JP JP2020530452A patent/JP7418328B2/ja active Active
- 2018-08-13 CA CA3072763A patent/CA3072763A1/en active Pending
- 2018-08-13 AU AU2018314281A patent/AU2018314281B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| AU2018314281A1 (en) | 2020-04-02 |
| EP3665753A4 (en) | 2021-04-21 |
| EP3665753A1 (en) | 2020-06-17 |
| JP2020530666A (ja) | 2020-10-22 |
| AU2018314281B2 (en) | 2024-02-01 |
| JP7418328B2 (ja) | 2024-01-19 |
| WO2019033120A1 (en) | 2019-02-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request |
Effective date: 20230810 |
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| EEER | Examination request |
Effective date: 20230810 |
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| EEER | Examination request |
Effective date: 20230810 |