JP2020529513A - シリコンベース誘電体への選択的堆積のための方法 - Google Patents
シリコンベース誘電体への選択的堆積のための方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 43
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 21
- 229910052710 silicon Inorganic materials 0.000 title claims description 21
- 239000010703 silicon Substances 0.000 title claims description 21
- 230000008021 deposition Effects 0.000 title description 8
- 239000003989 dielectric material Substances 0.000 title description 3
- 230000000903 blocking effect Effects 0.000 claims abstract description 57
- 238000000151 deposition Methods 0.000 claims abstract description 22
- 150000004767 nitrides Chemical class 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims description 53
- 239000000463 material Substances 0.000 claims description 37
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 20
- KMPQYAYAQWNLME-UHFFFAOYSA-N undecanal Chemical compound CCCCCCCCCCC=O KMPQYAYAQWNLME-UHFFFAOYSA-N 0.000 claims description 14
- 239000001257 hydrogen Substances 0.000 claims description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 11
- 238000005121 nitriding Methods 0.000 claims description 11
- 229910021529 ammonia Inorganic materials 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 10
- 239000012528 membrane Substances 0.000 claims description 9
- 239000003795 chemical substances by application Substances 0.000 claims description 7
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 150000001299 aldehydes Chemical class 0.000 claims description 5
- 150000008064 anhydrides Chemical class 0.000 claims description 5
- 125000004432 carbon atom Chemical group C* 0.000 claims description 5
- 150000002576 ketones Chemical class 0.000 claims description 5
- 150000001266 acyl halides Chemical class 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims description 3
- 239000007800 oxidant agent Substances 0.000 claims description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 2
- 150000002978 peroxides Chemical class 0.000 claims description 2
- 210000002381 plasma Anatomy 0.000 claims 2
- 239000007789 gas Substances 0.000 description 20
- 239000010410 layer Substances 0.000 description 18
- 230000008569 process Effects 0.000 description 15
- 150000001875 compounds Chemical class 0.000 description 14
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 11
- 238000000231 atomic layer deposition Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000010926 purge Methods 0.000 description 6
- 239000002052 molecular layer Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 229940126062 Compound A Drugs 0.000 description 3
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000002262 Schiff base Substances 0.000 description 2
- 150000004753 Schiff bases Chemical class 0.000 description 2
- 229910008051 Si-OH Inorganic materials 0.000 description 2
- 229910006358 Si—OH Inorganic materials 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 150000001721 carbon Chemical group 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 239000003701 inert diluent Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- KJIOQYGWTQBHNH-UHFFFAOYSA-N undecanol Chemical compound CCCCCCCCCCCO KJIOQYGWTQBHNH-UHFFFAOYSA-N 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 206010053487 Exposure to toxic agent Diseases 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- -1 SiOC Inorganic materials 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 150000001263 acyl chlorides Chemical class 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000001227 electron beam curing Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 230000000640 hydroxylating effect Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001603 reducing effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000002352 surface water Substances 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
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- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
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- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
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- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
Abstract
Description
Claims (14)
- 水素終端を備えた第1の表面と、水酸化物終端を備えた第2の表面と、を有する基板を窒化剤に曝露して、アミン終端された第1の表面を形成するステップと、
前記アミン終端された第1の表面をブロッキング分子に曝露して、前記第1の表面にブロッキング層を形成するステップと、
を含む方法。 - 水素終端を備えた第1の表面を有する第1の材料と、水酸基終端を備えた第2の表面を有する第2の材料と、を含む基板を用意するステップと、
前記基板を、前記第1の表面の前記水素終端と反応してアミン終端された第1の表面を形成する核種を含む窒化剤に曝露するステップと、
前記アミン終端された第1の表面をブロッキング分子に曝露して、前記第1の表面にブロッキング層を形成するステップと、
を含む膜を堆積させる方法。 - 前記第1の表面がシリコンを含み、前記第2の表面がシリコン誘電体を含む、請求項1または2に記載の方法。
- 前記窒化剤がアンモニア、ヒドラジン、またはそれらのプラズマのうちの1つまたは複数を含む、請求項1または2に記載の方法。
- 前記ブロッキング分子がカルボン酸、アシルハロゲン化物、ケトン、無水物、アルコール、またはアルデヒドのうちの1つまたは複数を含む、請求項1または2に記載の方法。
- 前記ブロッキング分子が約1〜約20個の範囲の炭素原子を有する、請求項5に記載の方法。
- 前記ブロッキング分子が約6〜約20個の範囲の炭素原子を有する、請求項6に記載の方法。
- 前記ブロッキング分子がウンデカナールを含む、請求項1または2に記載の方法。
- 前記第2の表面に膜を選択的に堆積させるステップをさらに含む、請求項1または2に記載の方法。
- 前記第2の表面に層を堆積させた後、前記第1の表面から前記ブロッキング層を除去するステップをさらに含む、請求項9に記載の方法。
- 前記ブロッキング層を除去するステップが前記ブロッキング層を酸化剤に曝露するステップを含む、請求項10に記載の方法。
- 前記酸化剤が酸素プラズマ、オゾン、高温酸素アニール、過酸化物、または水のうちの1つまたは複数を含む、請求項11に記載の方法。
- 前記第2の表面に層を堆積させた後、前記ブロッキング層が前記第1の表面から除去されない、請求項9に記載の方法。
- 水素終端を備えた第1の表面を有するシリコンを含む第1の材料と、ヒドロキシル基終端を備えた第2の表面の有する酸化ケイ素を含む第2の材料と、を含む基板を用意するステップと、
前記基板を、前記第1の表面の前記水素終端と反応してアミン終端された第1の表面を形成するアンモニアを含む窒化剤に曝露するステップと、
前記アミン終端された第1の表面を、ウンデカナールを含むブロッキング分子に曝露して、前記第1の表面にブロッキング層を形成するステップと、
前記第2の表面に膜を選択的に堆積させるステップと、
を含む膜を堆積させる方法。
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US201762535956P | 2017-07-23 | 2017-07-23 | |
US62/535,956 | 2017-07-23 | ||
PCT/US2018/042472 WO2019023001A1 (en) | 2017-07-23 | 2018-07-17 | METHODS FOR SELECTIVE DEPOSITION ON SILICON-BASED DIELECTRICS |
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WO2023132245A1 (ja) * | 2022-01-06 | 2023-07-13 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
WO2023157619A1 (ja) * | 2022-02-18 | 2023-08-24 | 富士フイルム株式会社 | 薬液、修飾基板の製造方法、積層体の製造方法 |
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US20220122848A1 (en) * | 2019-02-14 | 2022-04-21 | Lam Research Corporation | Selective etch using a sacrificial mask |
KR20200108242A (ko) * | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체 |
JP7227122B2 (ja) * | 2019-12-27 | 2023-02-21 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム |
KR102406174B1 (ko) * | 2020-09-08 | 2022-06-08 | 주식회사 이지티엠 | 선택성 부여제를 이용한 영역 선택적 박막 형성 방법 |
KR20230038256A (ko) * | 2020-09-10 | 2023-03-17 | 가부시키가이샤 코쿠사이 엘렉트릭 | 기판 처리 방법, 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램 |
KR102199999B1 (ko) * | 2020-10-08 | 2021-01-08 | 주식회사 유진테크 머티리얼즈 | 표면 보호 물질을 이용한 박막 형성 방법 |
TW202248443A (zh) * | 2021-02-28 | 2022-12-16 | 美商應用材料股份有限公司 | 選擇性沉積的表面處理 |
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WO2023157619A1 (ja) * | 2022-02-18 | 2023-08-24 | 富士フイルム株式会社 | 薬液、修飾基板の製造方法、積層体の製造方法 |
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