JP2020519017A5 - - Google Patents

Download PDF

Info

Publication number
JP2020519017A5
JP2020519017A5 JP2019559038A JP2019559038A JP2020519017A5 JP 2020519017 A5 JP2020519017 A5 JP 2020519017A5 JP 2019559038 A JP2019559038 A JP 2019559038A JP 2019559038 A JP2019559038 A JP 2019559038A JP 2020519017 A5 JP2020519017 A5 JP 2020519017A5
Authority
JP
Japan
Prior art keywords
wafer
interpolation
readable medium
modified
data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2019559038A
Other languages
English (en)
Japanese (ja)
Other versions
JP6931084B2 (ja
JP2020519017A (ja
Filing date
Publication date
Priority claimed from US15/671,230 external-priority patent/US10598617B2/en
Application filed filed Critical
Publication of JP2020519017A publication Critical patent/JP2020519017A/ja
Publication of JP2020519017A5 publication Critical patent/JP2020519017A5/ja
Application granted granted Critical
Publication of JP6931084B2 publication Critical patent/JP6931084B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2019559038A 2017-05-05 2018-05-04 光学検査結果に発する計量案内型検査サンプルシェイピング Active JP6931084B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762502459P 2017-05-05 2017-05-05
US62/502,459 2017-05-05
US15/671,230 US10598617B2 (en) 2017-05-05 2017-08-08 Metrology guided inspection sample shaping of optical inspection results
US15/671,230 2017-08-08
PCT/US2018/031002 WO2018204731A1 (en) 2017-05-05 2018-05-04 Metrology guided inspection sample shaping from optical inspection results

Publications (3)

Publication Number Publication Date
JP2020519017A JP2020519017A (ja) 2020-06-25
JP2020519017A5 true JP2020519017A5 (enExample) 2021-06-10
JP6931084B2 JP6931084B2 (ja) 2021-09-01

Family

ID=64014591

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019559038A Active JP6931084B2 (ja) 2017-05-05 2018-05-04 光学検査結果に発する計量案内型検査サンプルシェイピング

Country Status (6)

Country Link
US (1) US10598617B2 (enExample)
JP (1) JP6931084B2 (enExample)
KR (1) KR102324687B1 (enExample)
CN (1) CN110582842B (enExample)
TW (1) TWI750368B (enExample)
WO (1) WO2018204731A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10679333B2 (en) * 2018-03-14 2020-06-09 Kla-Tencor Corporation Defect detection, classification, and process window control using scanning electron microscope metrology
CN114930154B (zh) * 2020-01-07 2023-08-01 诺威有限公司 检测ocd计量机器学习的离群值和异常
US11967060B2 (en) * 2020-08-25 2024-04-23 Kla Corporation Wafer level spatial signature grouping using transfer learning
US12443840B2 (en) 2020-10-09 2025-10-14 Kla Corporation Dynamic control of machine learning based measurement recipe optimization
US20240319617A1 (en) * 2021-07-13 2024-09-26 Asml Holding N.V. Metrology systems with phased arrays for contaminant detection and microscopy
US20230317528A1 (en) * 2022-03-31 2023-10-05 Mellanox Technologies, Ltd. Efficient Semiconductor Metrology Using Machine Learning
WO2025021438A1 (en) * 2023-07-24 2025-01-30 Asml Netherlands B.V. A multiple-device training flow to reduce the time-to-recipe for computational guided inspection

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6171737B1 (en) 1998-02-03 2001-01-09 Advanced Micro Devices, Inc. Low cost application of oxide test wafer for defect monitor in photolithography process
US6121156A (en) 1998-04-28 2000-09-19 Cypress Semiconductor Corporation Contact monitor, method of forming same and method of analyzing contact-, via-and/or trench-forming processes in an integrated circuit
US6408219B2 (en) 1998-05-11 2002-06-18 Applied Materials, Inc. FAB yield enhancement system
US6744266B2 (en) 2000-10-02 2004-06-01 Applied Materials, Inc. Defect knowledge library
US6701259B2 (en) 2000-10-02 2004-03-02 Applied Materials, Inc. Defect source identifier
US7804994B2 (en) * 2002-02-15 2010-09-28 Kla-Tencor Technologies Corporation Overlay metrology and control method
US6828542B2 (en) 2002-06-07 2004-12-07 Brion Technologies, Inc. System and method for lithography process monitoring and control
US7207017B1 (en) 2004-06-10 2007-04-17 Advanced Micro Devices, Inc. Method and system for metrology recipe generation and review and analysis of design, simulation and metrology results
US7853920B2 (en) 2005-06-03 2010-12-14 Asml Netherlands B.V. Method for detecting, sampling, analyzing, and correcting marginal patterns in integrated circuit manufacturing
KR101565071B1 (ko) * 2005-11-18 2015-11-03 케이엘에이-텐코 코포레이션 검사 데이터와 조합하여 설계 데이터를 활용하는 방법 및 시스템
US7962866B2 (en) * 2006-12-29 2011-06-14 Cadence Design Systems, Inc. Method, system, and computer program product for determining three-dimensional feature characteristics in electronic designs
US8194968B2 (en) 2007-01-05 2012-06-05 Kla-Tencor Corp. Methods and systems for using electrical information for a device being fabricated on a wafer to perform one or more defect-related functions
US8559001B2 (en) * 2010-01-11 2013-10-15 Kla-Tencor Corporation Inspection guided overlay metrology
US9620426B2 (en) * 2010-02-18 2017-04-11 Kla-Tencor Corporation Method and system for providing process tool correctables using an optimized sampling scheme with smart interpolation
JP5672941B2 (ja) * 2010-10-21 2015-02-18 ソニー株式会社 画像処理装置、および画像処理方法、並びにプログラム
US8429570B2 (en) * 2010-10-28 2013-04-23 International Business Machines Corporation Pattern recognition with edge correction for design based metrology
US8495527B2 (en) * 2010-10-28 2013-07-23 International Business Machines Corporation Pattern recognition with edge correction for design based metrology
KR101943593B1 (ko) * 2011-04-06 2019-01-30 케이엘에이-텐코 코포레이션 공정 제어를 개선하기 위한 품질 메트릭 제공 방법 및 시스템
US9201022B2 (en) 2011-06-02 2015-12-01 Taiwan Semiconductor Manufacturing Company, Ltd. Extraction of systematic defects
US9240360B2 (en) * 2012-07-25 2016-01-19 International Business Machines Corporation Run-to-run control utilizing virtual metrology in semiconductor manufacturing
US9098891B2 (en) 2013-04-08 2015-08-04 Kla-Tencor Corp. Adaptive sampling for semiconductor inspection recipe creation, defect review, and metrology
US9110039B2 (en) * 2013-07-25 2015-08-18 Kla-Tencor Corporation Auto-focus system and methods for die-to-die inspection
US9784690B2 (en) * 2014-05-12 2017-10-10 Kla-Tencor Corporation Apparatus, techniques, and target designs for measuring semiconductor parameters
TWI703651B (zh) * 2014-10-03 2020-09-01 美商克萊譚克公司 驗證度量目標及其設計
US9903711B2 (en) * 2015-04-06 2018-02-27 KLA—Tencor Corporation Feed forward of metrology data in a metrology system
US10359371B2 (en) 2015-08-24 2019-07-23 Kla-Tencor Corp. Determining one or more characteristics of a pattern of interest on a specimen
US10380728B2 (en) * 2015-08-31 2019-08-13 Kla-Tencor Corporation Model-based metrology using images
US10101676B2 (en) * 2015-09-23 2018-10-16 KLA—Tencor Corporation Spectroscopic beam profile overlay metrology

Similar Documents

Publication Publication Date Title
JP2020519017A5 (enExample)
KR102716521B1 (ko) 인쇄 회로 기판 검사 장치 및 부품의 실장 상태를 검사하기 위한 방법
TWI354594B (en) Method for correcting systematic errors in a laser
TWI731559B (zh) 電子束觀察裝置，電子束觀察系統，電子束觀察裝置中的圖像修正方法及用於圖像修正的修正係數算出方法
TWI542866B (zh) 用於使用掃瞄式電子顯微鏡圖像之三維映射之方法、設備及電腦軟體產品
TWI578130B (zh) 產生用於製造工具之配方的方法及其系統
JP2017502499A5 (enExample)
JP2019525450A5 (enExample)
JP4846635B2 (ja) パターン情報生成方法
JP2017517759A5 (enExample)
JP2016106228A5 (enExample)
TWI698705B (zh) 圖案測定方法、及圖案測定裝置
KR102483920B1 (ko) Cd-sem 주사 전자 현미경에 의한 특성화에 대한 방법
JP2013062508A5 (enExample)
KR20190029670A (ko) 패턴 계측 장치, 및 컴퓨터 프로그램
CN102168945B (zh) 影像测量系统及方法
JP2015100080A5 (enExample)
JP2020181629A (ja) 電子線観察装置、電子線観察システム及び電子線観察装置の制御方法
JPWO2020250373A5 (enExample)
TW201937625A (zh) 使用電子顯微法之半導體度量衡及缺陷分類
TW201907156A (zh) 光學檢驗結果之計量導引檢驗樣品成形
CN108776965B (zh) 一种图像中直线测量方法、装置、设备及存储介质
WO2014208202A1 (ja) パターン形状評価装置及び方法
CN103808440B (zh) 微纳米散斑的制备方法和系统
CN114581314B (zh) 振镜校准方法、装置及计算机可读存储介质