TWI750368B - 光學檢驗結果之計量導引檢驗樣品成形 - Google Patents

光學檢驗結果之計量導引檢驗樣品成形 Download PDF

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Publication number
TWI750368B
TWI750368B TW107114978A TW107114978A TWI750368B TW I750368 B TWI750368 B TW I750368B TW 107114978 A TW107114978 A TW 107114978A TW 107114978 A TW107114978 A TW 107114978A TW I750368 B TWI750368 B TW I750368B
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Taiwan
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wafer
inspection
measurements
metrology
controller
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TW107114978A
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English (en)
Chinese (zh)
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TW201907156A (zh
Inventor
考希克 沙
安德魯 詹姆士 克羅斯
安東尼歐 曼尼
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美商克萊譚克公司
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Publication of TW201907156A publication Critical patent/TW201907156A/zh
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q90/00—Scanning-probe techniques or apparatus not otherwise provided for
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8854—Grading and classifying of flaws
    • G01N2021/8867—Grading and classifying of flaws using sequentially two or more inspection runs, e.g. coarse and fine, or detecting then analysing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

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  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Radiology & Medical Imaging (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
TW107114978A 2017-05-05 2018-05-03 光學檢驗結果之計量導引檢驗樣品成形 TWI750368B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201762502459P 2017-05-05 2017-05-05
US62/502,459 2017-05-05
US15/671,230 US10598617B2 (en) 2017-05-05 2017-08-08 Metrology guided inspection sample shaping of optical inspection results
US15/671,230 2017-08-08

Publications (2)

Publication Number Publication Date
TW201907156A TW201907156A (zh) 2019-02-16
TWI750368B true TWI750368B (zh) 2021-12-21

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW107114978A TWI750368B (zh) 2017-05-05 2018-05-03 光學檢驗結果之計量導引檢驗樣品成形

Country Status (6)

Country Link
US (1) US10598617B2 (enExample)
JP (1) JP6931084B2 (enExample)
KR (1) KR102324687B1 (enExample)
CN (1) CN110582842B (enExample)
TW (1) TWI750368B (enExample)
WO (1) WO2018204731A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10679333B2 (en) * 2018-03-14 2020-06-09 Kla-Tencor Corporation Defect detection, classification, and process window control using scanning electron microscope metrology
CN114930154B (zh) * 2020-01-07 2023-08-01 诺威有限公司 检测ocd计量机器学习的离群值和异常
US11967060B2 (en) * 2020-08-25 2024-04-23 Kla Corporation Wafer level spatial signature grouping using transfer learning
US12443840B2 (en) 2020-10-09 2025-10-14 Kla Corporation Dynamic control of machine learning based measurement recipe optimization
CN117581161A (zh) * 2021-07-13 2024-02-20 Asml控股股份有限公司 具有用于污染物检测和显微镜检查的相控阵列的量测系统
US20230317528A1 (en) * 2022-03-31 2023-10-05 Mellanox Technologies, Ltd. Efficient Semiconductor Metrology Using Machine Learning
CN121586867A (zh) * 2023-07-24 2026-02-27 Asml荷兰有限公司 减少用于计算引导检查的工艺配方时间的多器件训练流程

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110170091A1 (en) * 2010-01-11 2011-07-14 Kla-Tencor Corporation Inspection guided overlay metrology
CN102572447A (zh) * 2010-10-21 2012-07-11 索尼公司 图像处理设备、图像处理方法及程序
US20130035888A1 (en) * 2011-04-06 2013-02-07 Kla-Tencor Corporation Method and system for providing a quality metric for improved process control
US20140031968A1 (en) * 2012-07-25 2014-01-30 International Business Machines Corporation Run-to-Run Control Utilizing Virtual Metrology in Semiconductor Manufacturing
US20150029499A1 (en) * 2013-07-25 2015-01-29 Kla-Tencor Corporation Auto-focus system and methods for die-to-die inspection
CN106463430A (zh) * 2014-05-12 2017-02-22 科磊股份有限公司 用于测量半导体参数的设备、技术和目标设计

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6171737B1 (en) 1998-02-03 2001-01-09 Advanced Micro Devices, Inc. Low cost application of oxide test wafer for defect monitor in photolithography process
US6121156A (en) 1998-04-28 2000-09-19 Cypress Semiconductor Corporation Contact monitor, method of forming same and method of analyzing contact-, via-and/or trench-forming processes in an integrated circuit
US6408219B2 (en) 1998-05-11 2002-06-18 Applied Materials, Inc. FAB yield enhancement system
US6744266B2 (en) 2000-10-02 2004-06-01 Applied Materials, Inc. Defect knowledge library
US6701259B2 (en) 2000-10-02 2004-03-02 Applied Materials, Inc. Defect source identifier
US7804994B2 (en) * 2002-02-15 2010-09-28 Kla-Tencor Technologies Corporation Overlay metrology and control method
US6828542B2 (en) 2002-06-07 2004-12-07 Brion Technologies, Inc. System and method for lithography process monitoring and control
US7207017B1 (en) 2004-06-10 2007-04-17 Advanced Micro Devices, Inc. Method and system for metrology recipe generation and review and analysis of design, simulation and metrology results
US7853920B2 (en) 2005-06-03 2010-12-14 Asml Netherlands B.V. Method for detecting, sampling, analyzing, and correcting marginal patterns in integrated circuit manufacturing
EP1955225A4 (en) * 2005-11-18 2009-11-04 Kla Tencor Tech Corp METHOD AND SYSTEMS FOR USE OF DESIGN DATA IN COMBINATION WITH TEST DATA
US7962866B2 (en) * 2006-12-29 2011-06-14 Cadence Design Systems, Inc. Method, system, and computer program product for determining three-dimensional feature characteristics in electronic designs
WO2008086282A2 (en) 2007-01-05 2008-07-17 Kla-Tencor Corporation Methods and systems for using electrical information for a device being fabricated on a wafer to perform one or more defect-related functions
US9620426B2 (en) * 2010-02-18 2017-04-11 Kla-Tencor Corporation Method and system for providing process tool correctables using an optimized sampling scheme with smart interpolation
US8429570B2 (en) * 2010-10-28 2013-04-23 International Business Machines Corporation Pattern recognition with edge correction for design based metrology
US8495527B2 (en) * 2010-10-28 2013-07-23 International Business Machines Corporation Pattern recognition with edge correction for design based metrology
US9201022B2 (en) 2011-06-02 2015-12-01 Taiwan Semiconductor Manufacturing Company, Ltd. Extraction of systematic defects
US9098891B2 (en) 2013-04-08 2015-08-04 Kla-Tencor Corp. Adaptive sampling for semiconductor inspection recipe creation, defect review, and metrology
TWI703651B (zh) * 2014-10-03 2020-09-01 美商克萊譚克公司 驗證度量目標及其設計
US9903711B2 (en) * 2015-04-06 2018-02-27 KLA—Tencor Corporation Feed forward of metrology data in a metrology system
US10359371B2 (en) 2015-08-24 2019-07-23 Kla-Tencor Corp. Determining one or more characteristics of a pattern of interest on a specimen
US10380728B2 (en) * 2015-08-31 2019-08-13 Kla-Tencor Corporation Model-based metrology using images
US10101676B2 (en) * 2015-09-23 2018-10-16 KLA—Tencor Corporation Spectroscopic beam profile overlay metrology

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110170091A1 (en) * 2010-01-11 2011-07-14 Kla-Tencor Corporation Inspection guided overlay metrology
CN102572447A (zh) * 2010-10-21 2012-07-11 索尼公司 图像处理设备、图像处理方法及程序
US20130035888A1 (en) * 2011-04-06 2013-02-07 Kla-Tencor Corporation Method and system for providing a quality metric for improved process control
US20140031968A1 (en) * 2012-07-25 2014-01-30 International Business Machines Corporation Run-to-Run Control Utilizing Virtual Metrology in Semiconductor Manufacturing
US20150029499A1 (en) * 2013-07-25 2015-01-29 Kla-Tencor Corporation Auto-focus system and methods for die-to-die inspection
CN106463430A (zh) * 2014-05-12 2017-02-22 科磊股份有限公司 用于测量半导体参数的设备、技术和目标设计

Also Published As

Publication number Publication date
CN110582842A (zh) 2019-12-17
WO2018204731A1 (en) 2018-11-08
KR20190138891A (ko) 2019-12-16
US10598617B2 (en) 2020-03-24
JP2020519017A (ja) 2020-06-25
TW201907156A (zh) 2019-02-16
CN110582842B (zh) 2021-02-23
US20180321168A1 (en) 2018-11-08
KR102324687B1 (ko) 2021-11-10
JP6931084B2 (ja) 2021-09-01

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