TWI750368B - 光學檢驗結果之計量導引檢驗樣品成形 - Google Patents
光學檢驗結果之計量導引檢驗樣品成形 Download PDFInfo
- Publication number
- TWI750368B TWI750368B TW107114978A TW107114978A TWI750368B TW I750368 B TWI750368 B TW I750368B TW 107114978 A TW107114978 A TW 107114978A TW 107114978 A TW107114978 A TW 107114978A TW I750368 B TWI750368 B TW I750368B
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- Prior art keywords
- wafer
- inspection
- measurements
- metrology
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- 238000007689 inspection Methods 0.000 title claims abstract description 123
- 230000003287 optical effect Effects 0.000 title description 25
- 238000007493 shaping process Methods 0.000 title 1
- 230000007547 defect Effects 0.000 claims abstract description 78
- 238000005259 measurement Methods 0.000 claims abstract description 77
- 238000005070 sampling Methods 0.000 claims abstract description 55
- 235000012431 wafers Nutrition 0.000 claims description 139
- 238000000034 method Methods 0.000 claims description 56
- 238000012876 topography Methods 0.000 claims description 10
- 238000004891 communication Methods 0.000 claims description 9
- 238000013459 approach Methods 0.000 claims description 6
- 238000013500 data storage Methods 0.000 claims description 4
- 238000004626 scanning electron microscopy Methods 0.000 description 29
- 238000010894 electron beam technology Methods 0.000 description 16
- 238000013461 design Methods 0.000 description 12
- 230000006870 function Effects 0.000 description 11
- 230000015654 memory Effects 0.000 description 11
- 238000009826 distribution Methods 0.000 description 9
- 238000013213 extrapolation Methods 0.000 description 9
- 230000005540 biological transmission Effects 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000001514 detection method Methods 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 238000004422 calculation algorithm Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000013102 re-test Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000012795 verification Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 235000006719 Cassia obtusifolia Nutrition 0.000 description 1
- 235000014552 Cassia tora Nutrition 0.000 description 1
- 244000201986 Cassia tora Species 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000013528 artificial neural network Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000013480 data collection Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012417 linear regression Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000010801 machine learning Methods 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007619 statistical method Methods 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
- G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q90/00—Scanning-probe techniques or apparatus not otherwise provided for
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
- G01N2021/8854—Grading and classifying of flaws
- G01N2021/8867—Grading and classifying of flaws using sequentially two or more inspection runs, e.g. coarse and fine, or detecting then analysing
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Pathology (AREA)
- Immunology (AREA)
- Biochemistry (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Radiology & Medical Imaging (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762502459P | 2017-05-05 | 2017-05-05 | |
| US62/502,459 | 2017-05-05 | ||
| US15/671,230 | 2017-08-08 | ||
| US15/671,230 US10598617B2 (en) | 2017-05-05 | 2017-08-08 | Metrology guided inspection sample shaping of optical inspection results |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201907156A TW201907156A (zh) | 2019-02-16 |
| TWI750368B true TWI750368B (zh) | 2021-12-21 |
Family
ID=64014591
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107114978A TWI750368B (zh) | 2017-05-05 | 2018-05-03 | 光學檢驗結果之計量導引檢驗樣品成形 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10598617B2 (enExample) |
| JP (1) | JP6931084B2 (enExample) |
| KR (1) | KR102324687B1 (enExample) |
| CN (1) | CN110582842B (enExample) |
| TW (1) | TWI750368B (enExample) |
| WO (1) | WO2018204731A1 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10679333B2 (en) * | 2018-03-14 | 2020-06-09 | Kla-Tencor Corporation | Defect detection, classification, and process window control using scanning electron microscope metrology |
| TWI777357B (zh) * | 2020-01-07 | 2022-09-11 | 以色列商諾威量測設備股份有限公司 | 用於光學關鍵尺寸計量的方法和系統及機器可存取的儲存介質 |
| US11967060B2 (en) * | 2020-08-25 | 2024-04-23 | Kla Corporation | Wafer level spatial signature grouping using transfer learning |
| US12443840B2 (en) | 2020-10-09 | 2025-10-14 | Kla Corporation | Dynamic control of machine learning based measurement recipe optimization |
| US20240319617A1 (en) * | 2021-07-13 | 2024-09-26 | Asml Holding N.V. | Metrology systems with phased arrays for contaminant detection and microscopy |
| US20230317528A1 (en) * | 2022-03-31 | 2023-10-05 | Mellanox Technologies, Ltd. | Efficient Semiconductor Metrology Using Machine Learning |
| WO2025021438A1 (en) * | 2023-07-24 | 2025-01-30 | Asml Netherlands B.V. | A multiple-device training flow to reduce the time-to-recipe for computational guided inspection |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110170091A1 (en) * | 2010-01-11 | 2011-07-14 | Kla-Tencor Corporation | Inspection guided overlay metrology |
| CN102572447A (zh) * | 2010-10-21 | 2012-07-11 | 索尼公司 | 图像处理设备、图像处理方法及程序 |
| US20130035888A1 (en) * | 2011-04-06 | 2013-02-07 | Kla-Tencor Corporation | Method and system for providing a quality metric for improved process control |
| US20140031968A1 (en) * | 2012-07-25 | 2014-01-30 | International Business Machines Corporation | Run-to-Run Control Utilizing Virtual Metrology in Semiconductor Manufacturing |
| US20150029499A1 (en) * | 2013-07-25 | 2015-01-29 | Kla-Tencor Corporation | Auto-focus system and methods for die-to-die inspection |
| CN106463430A (zh) * | 2014-05-12 | 2017-02-22 | 科磊股份有限公司 | 用于测量半导体参数的设备、技术和目标设计 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6171737B1 (en) | 1998-02-03 | 2001-01-09 | Advanced Micro Devices, Inc. | Low cost application of oxide test wafer for defect monitor in photolithography process |
| US6121156A (en) | 1998-04-28 | 2000-09-19 | Cypress Semiconductor Corporation | Contact monitor, method of forming same and method of analyzing contact-, via-and/or trench-forming processes in an integrated circuit |
| US6408219B2 (en) | 1998-05-11 | 2002-06-18 | Applied Materials, Inc. | FAB yield enhancement system |
| US6701259B2 (en) | 2000-10-02 | 2004-03-02 | Applied Materials, Inc. | Defect source identifier |
| US6744266B2 (en) | 2000-10-02 | 2004-06-01 | Applied Materials, Inc. | Defect knowledge library |
| US7804994B2 (en) * | 2002-02-15 | 2010-09-28 | Kla-Tencor Technologies Corporation | Overlay metrology and control method |
| US6828542B2 (en) | 2002-06-07 | 2004-12-07 | Brion Technologies, Inc. | System and method for lithography process monitoring and control |
| US7207017B1 (en) | 2004-06-10 | 2007-04-17 | Advanced Micro Devices, Inc. | Method and system for metrology recipe generation and review and analysis of design, simulation and metrology results |
| US7853920B2 (en) | 2005-06-03 | 2010-12-14 | Asml Netherlands B.V. | Method for detecting, sampling, analyzing, and correcting marginal patterns in integrated circuit manufacturing |
| KR101665168B1 (ko) * | 2005-11-18 | 2016-10-11 | 케이엘에이-텐코 코포레이션 | 검사 데이터와 조합하여 설계 데이터를 활용하는 방법 및 시스템 |
| US7962866B2 (en) * | 2006-12-29 | 2011-06-14 | Cadence Design Systems, Inc. | Method, system, and computer program product for determining three-dimensional feature characteristics in electronic designs |
| US8194968B2 (en) | 2007-01-05 | 2012-06-05 | Kla-Tencor Corp. | Methods and systems for using electrical information for a device being fabricated on a wafer to perform one or more defect-related functions |
| US9620426B2 (en) * | 2010-02-18 | 2017-04-11 | Kla-Tencor Corporation | Method and system for providing process tool correctables using an optimized sampling scheme with smart interpolation |
| US8495527B2 (en) * | 2010-10-28 | 2013-07-23 | International Business Machines Corporation | Pattern recognition with edge correction for design based metrology |
| US8429570B2 (en) * | 2010-10-28 | 2013-04-23 | International Business Machines Corporation | Pattern recognition with edge correction for design based metrology |
| US9201022B2 (en) | 2011-06-02 | 2015-12-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Extraction of systematic defects |
| US9098891B2 (en) | 2013-04-08 | 2015-08-04 | Kla-Tencor Corp. | Adaptive sampling for semiconductor inspection recipe creation, defect review, and metrology |
| TWI703651B (zh) * | 2014-10-03 | 2020-09-01 | 美商克萊譚克公司 | 驗證度量目標及其設計 |
| US9903711B2 (en) * | 2015-04-06 | 2018-02-27 | KLA—Tencor Corporation | Feed forward of metrology data in a metrology system |
| US10359371B2 (en) | 2015-08-24 | 2019-07-23 | Kla-Tencor Corp. | Determining one or more characteristics of a pattern of interest on a specimen |
| US10380728B2 (en) * | 2015-08-31 | 2019-08-13 | Kla-Tencor Corporation | Model-based metrology using images |
| US10101676B2 (en) * | 2015-09-23 | 2018-10-16 | KLA—Tencor Corporation | Spectroscopic beam profile overlay metrology |
-
2017
- 2017-08-08 US US15/671,230 patent/US10598617B2/en active Active
-
2018
- 2018-05-03 TW TW107114978A patent/TWI750368B/zh active
- 2018-05-04 WO PCT/US2018/031002 patent/WO2018204731A1/en not_active Ceased
- 2018-05-04 KR KR1020197035756A patent/KR102324687B1/ko active Active
- 2018-05-04 CN CN201880029393.5A patent/CN110582842B/zh active Active
- 2018-05-04 JP JP2019559038A patent/JP6931084B2/ja active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110170091A1 (en) * | 2010-01-11 | 2011-07-14 | Kla-Tencor Corporation | Inspection guided overlay metrology |
| CN102572447A (zh) * | 2010-10-21 | 2012-07-11 | 索尼公司 | 图像处理设备、图像处理方法及程序 |
| US20130035888A1 (en) * | 2011-04-06 | 2013-02-07 | Kla-Tencor Corporation | Method and system for providing a quality metric for improved process control |
| US20140031968A1 (en) * | 2012-07-25 | 2014-01-30 | International Business Machines Corporation | Run-to-Run Control Utilizing Virtual Metrology in Semiconductor Manufacturing |
| US20150029499A1 (en) * | 2013-07-25 | 2015-01-29 | Kla-Tencor Corporation | Auto-focus system and methods for die-to-die inspection |
| CN106463430A (zh) * | 2014-05-12 | 2017-02-22 | 科磊股份有限公司 | 用于测量半导体参数的设备、技术和目标设计 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6931084B2 (ja) | 2021-09-01 |
| US20180321168A1 (en) | 2018-11-08 |
| CN110582842B (zh) | 2021-02-23 |
| KR20190138891A (ko) | 2019-12-16 |
| CN110582842A (zh) | 2019-12-17 |
| WO2018204731A1 (en) | 2018-11-08 |
| US10598617B2 (en) | 2020-03-24 |
| TW201907156A (zh) | 2019-02-16 |
| KR102324687B1 (ko) | 2021-11-10 |
| JP2020519017A (ja) | 2020-06-25 |
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