JP2020515019A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2020515019A5 JP2020515019A5 JP2019554476A JP2019554476A JP2020515019A5 JP 2020515019 A5 JP2020515019 A5 JP 2020515019A5 JP 2019554476 A JP2019554476 A JP 2019554476A JP 2019554476 A JP2019554476 A JP 2019554476A JP 2020515019 A5 JP2020515019 A5 JP 2020515019A5
- Authority
- JP
- Japan
- Prior art keywords
- cap layer
- protective cap
- silicon emitter
- less
- diameter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 17
- 230000001681 protective effect Effects 0.000 claims 17
- 229910052710 silicon Inorganic materials 0.000 claims 17
- 239000010703 silicon Substances 0.000 claims 17
- 238000000034 method Methods 0.000 claims 7
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 4
- 229910052707 ruthenium Inorganic materials 0.000 claims 4
- 238000010894 electron beam technology Methods 0.000 claims 3
- 239000012535 impurity Substances 0.000 claims 2
- 238000004544 sputter deposition Methods 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims 1
- 238000000231 atomic layer deposition Methods 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 230000007547 defect Effects 0.000 claims 1
- 230000005684 electric field Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- -1 oxides Chemical compound 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 238000012856 packing Methods 0.000 claims 1
- 229910052700 potassium Inorganic materials 0.000 claims 1
- 239000011591 potassium Substances 0.000 claims 1
- 229910052708 sodium Inorganic materials 0.000 claims 1
- 239000011734 sodium Substances 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662436925P | 2016-12-20 | 2016-12-20 | |
| US62/436,925 | 2016-12-20 | ||
| US15/588,006 | 2017-05-05 | ||
| US15/588,006 US10141155B2 (en) | 2016-12-20 | 2017-05-05 | Electron beam emitters with ruthenium coating |
| PCT/US2017/066969 WO2018118757A1 (en) | 2016-12-20 | 2017-12-18 | Electron beam emitters with ruthenium coating |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020515019A JP2020515019A (ja) | 2020-05-21 |
| JP2020515019A5 true JP2020515019A5 (enExample) | 2021-02-04 |
| JP6860691B2 JP6860691B2 (ja) | 2021-04-21 |
Family
ID=62562596
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019554476A Active JP6860691B2 (ja) | 2016-12-20 | 2017-12-18 | ルテニウム被覆を有する電子ビーム放出器 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10141155B2 (enExample) |
| JP (1) | JP6860691B2 (enExample) |
| KR (1) | KR102301555B1 (enExample) |
| CN (1) | CN110291609B (enExample) |
| IL (1) | IL267375B (enExample) |
| TW (1) | TWI731202B (enExample) |
| WO (1) | WO2018118757A1 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10607806B2 (en) | 2017-10-10 | 2020-03-31 | Kla-Tencor Corporation | Silicon electron emitter designs |
| US10395884B2 (en) | 2017-10-10 | 2019-08-27 | Kla-Tencor Corporation | Ruthenium encapsulated photocathode electron emitter |
| US10714294B2 (en) | 2018-05-25 | 2020-07-14 | Kla-Tencor Corporation | Metal protective layer for electron emitters with a diffusion barrier |
| US10714295B2 (en) | 2018-09-18 | 2020-07-14 | Kla-Tencor Corporation | Metal encapsulated photocathode electron emitter |
| US11495428B2 (en) * | 2019-02-17 | 2022-11-08 | Kla Corporation | Plasmonic photocathode emitters at ultraviolet and visible wavelengths |
| US11217416B2 (en) * | 2019-09-27 | 2022-01-04 | Kla Corporation | Plasmonic photocathode emitters |
| US11719652B2 (en) * | 2020-02-04 | 2023-08-08 | Kla Corporation | Semiconductor metrology and inspection based on an x-ray source with an electron emitter array |
| US11335529B2 (en) * | 2020-06-19 | 2022-05-17 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Thermally enhanced compound field emitter |
| US11699564B2 (en) * | 2020-10-23 | 2023-07-11 | Nuflare Technology, Inc. | Schottky thermal field emitter with integrated beam splitter |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5363021A (en) | 1993-07-12 | 1994-11-08 | Cornell Research Foundation, Inc. | Massively parallel array cathode |
| EP0637050B1 (en) * | 1993-07-16 | 1999-12-22 | Matsushita Electric Industrial Co., Ltd. | A method of fabricating a field emitter |
| JP3239038B2 (ja) * | 1995-04-03 | 2001-12-17 | シャープ株式会社 | 電界放出型電子源の製造方法 |
| PL324090A1 (en) * | 1995-06-09 | 1998-05-11 | Toshiba Kk | Impregnated-type cathode asembly, cathode substrate used in that assembly, electron gun incorporating that cathode assembly and electron and electron valve incorporating that cathode assembly |
| JP3627836B2 (ja) * | 1997-06-20 | 2005-03-09 | ソニー株式会社 | 冷陰極の製造方法 |
| JP3084272B2 (ja) * | 1998-12-22 | 2000-09-04 | 松下電工株式会社 | 電界放射型電子源 |
| US6911768B2 (en) * | 2001-04-30 | 2005-06-28 | Hewlett-Packard Development Company, L.P. | Tunneling emitter with nanohole openings |
| JP2003288834A (ja) * | 2002-03-27 | 2003-10-10 | National Institute Of Advanced Industrial & Technology | 電界放出型冷陰極 |
| US7279686B2 (en) | 2003-07-08 | 2007-10-09 | Biomed Solutions, Llc | Integrated sub-nanometer-scale electron beam systems |
| US7074719B2 (en) * | 2003-11-28 | 2006-07-11 | International Business Machines Corporation | ALD deposition of ruthenium |
| US7465210B2 (en) | 2004-02-25 | 2008-12-16 | The Regents Of The University Of California | Method of fabricating carbide and nitride nano electron emitters |
| US7735147B2 (en) | 2005-10-13 | 2010-06-08 | The Regents Of The University Of California | Probe system comprising an electric-field-aligned probe tip and method for fabricating the same |
| KR101159074B1 (ko) * | 2006-01-14 | 2012-06-25 | 삼성전자주식회사 | 도전성 탄소나노튜브 팁, 이를 구비한 스캐닝 프로브마이크로스코프의 탐침 및 상기 도전성 탄소나노튜브 팁의제조 방법 |
| CN101105488B (zh) * | 2006-07-14 | 2011-01-26 | 鸿富锦精密工业（深圳）有限公司 | 逸出功的测量方法 |
| GB0722120D0 (en) * | 2007-11-10 | 2007-12-19 | Quantum Filament Technologies | Improved field emission backplate |
| WO2012114521A1 (ja) | 2011-02-25 | 2012-08-30 | 株式会社Ｐａｒａｍ | 電子銃および電子ビーム装置 |
| CN103367134B (zh) * | 2013-08-08 | 2015-11-11 | 电子科技大学 | 一种基于金属钌修饰的多孔硅表面金属电极制备方法 |
| KR101674972B1 (ko) * | 2013-12-26 | 2016-11-10 | 한국과학기술원 | 나노 스케일 패터닝 방법 및 이로부터 제조된 전자기기용 집적소자 |
| US9984846B2 (en) | 2016-06-30 | 2018-05-29 | Kla-Tencor Corporation | High brightness boron-containing electron beam emitters for use in a vacuum environment |
-
2017
- 2017-05-05 US US15/588,006 patent/US10141155B2/en not_active Expired - Fee Related
- 2017-12-18 JP JP2019554476A patent/JP6860691B2/ja active Active
- 2017-12-18 CN CN201780086182.0A patent/CN110291609B/zh active Active
- 2017-12-18 IL IL267375A patent/IL267375B/en unknown
- 2017-12-18 KR KR1020197021052A patent/KR102301555B1/ko active Active
- 2017-12-18 WO PCT/US2017/066969 patent/WO2018118757A1/en not_active Ceased
- 2017-12-19 TW TW106144496A patent/TWI731202B/zh active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2020515019A5 (enExample) | ||
| JP2020061373A5 (ja) | 蓄電池用電極 | |
| TWD219446S (zh) | 用於運送可呼吸氣體的通氣管 | |
| JP2013232636A5 (enExample) | ||
| WO2010141112A3 (en) | Anchored nanostructure materials and method of fabrication | |
| JP5424098B2 (ja) | 電子放出体およびｘ線放射装置 | |
| JP2020537295A5 (enExample) | ||
| CN104458813A (zh) | 基于类金刚石薄膜的纳米孔测量系统及其制备方法 | |
| Ke et al. | Non-thermal hydrogen plasma processing effectively increases the antibacterial activity of graphene oxide | |
| CN104966438A (zh) | 一种落体法测重力加速度实验仪 | |
| JP2010177480A5 (enExample) | ||
| JP2009138229A5 (enExample) | ||
| JP2013243117A5 (enExample) | ||
| JPS5986220A (ja) | Ｘ線リソグラフィーによるラッカー層のパターン形成用マスクとその製造方法並びにｘ線リソグラフィーによる半導体装置の製造方法 | |
| JP2009037910A5 (enExample) | ||
| CN110767343A (zh) | 一种用于高真空环境下的中子屏蔽管道 | |
| JP2017181490A5 (enExample) | ||
| CN102502606A (zh) | 一种石墨烯纳米孔的制备方法 | |
| CN105261263A (zh) | 自由落体运动实验仪 | |
| JP2014168758A5 (enExample) | ||
| JP2008234981A5 (enExample) | ||
| JP2006233283A5 (enExample) | ||
| JP2013195204A5 (enExample) | ||
| JP2016065827A5 (enExample) | ||
| CN204321923U (zh) | 一种用于航空发动机燃烧室机匣的x射线探伤夹具 |