TWI731202B - 用以電子發射的設備，方法及系統 - Google Patents

用以電子發射的設備，方法及系統 Download PDF

Info

Publication number
TWI731202B
TWI731202B TW106144496A TW106144496A TWI731202B TW I731202 B TWI731202 B TW I731202B TW 106144496 A TW106144496 A TW 106144496A TW 106144496 A TW106144496 A TW 106144496A TW I731202 B TWI731202 B TW I731202B
Authority
TW
Taiwan
Prior art keywords
protective cover
cover layer
emitter
less
silicon emitter
Prior art date
Application number
TW106144496A
Other languages
English (en)
Chinese (zh)
Other versions
TW201830448A (zh
Inventor
吉爾達多 Ｒ 德爾加多
貝里歐斯 艾德葛爾朵 葛爾夏
法蘭斯 希爾
盧蒂 葛爾夏
Original Assignee
美商克萊譚克公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商克萊譚克公司 filed Critical 美商克萊譚克公司
Publication of TW201830448A publication Critical patent/TW201830448A/zh
Application granted granted Critical
Publication of TWI731202B publication Critical patent/TWI731202B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H01J1/3044—Point emitters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30403—Field emission cathodes characterised by the emitter shape
    • H01J2201/30407—Microengineered point emitters
    • H01J2201/30415—Microengineered point emitters needle shaped
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30403—Field emission cathodes characterised by the emitter shape
    • H01J2201/30426—Coatings on the emitter surface, e.g. with low work function materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30403—Field emission cathodes characterised by the emitter shape
    • H01J2201/30434—Nanotubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/3048—Semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/061—Construction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06308—Thermionic sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06325—Cold-cathode sources
    • H01J2237/06341—Field emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Cold Cathode And The Manufacture (AREA)
TW106144496A 2016-12-20 2017-12-19 用以電子發射的設備，方法及系統 TWI731202B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201662436925P 2016-12-20 2016-12-20
US62/436,925 2016-12-20
US15/588,006 2017-05-05
US15/588,006 US10141155B2 (en) 2016-12-20 2017-05-05 Electron beam emitters with ruthenium coating

Publications (2)

Publication Number Publication Date
TW201830448A TW201830448A (zh) 2018-08-16
TWI731202B true TWI731202B (zh) 2021-06-21

Family

ID=62562596

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106144496A TWI731202B (zh) 2016-12-20 2017-12-19 用以電子發射的設備，方法及系統

Country Status (7)

Country Link
US (1) US10141155B2 (enExample)
JP (1) JP6860691B2 (enExample)
KR (1) KR102301555B1 (enExample)
CN (1) CN110291609B (enExample)
IL (1) IL267375B (enExample)
TW (1) TWI731202B (enExample)
WO (1) WO2018118757A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10607806B2 (en) 2017-10-10 2020-03-31 Kla-Tencor Corporation Silicon electron emitter designs
US10395884B2 (en) 2017-10-10 2019-08-27 Kla-Tencor Corporation Ruthenium encapsulated photocathode electron emitter
US10714294B2 (en) 2018-05-25 2020-07-14 Kla-Tencor Corporation Metal protective layer for electron emitters with a diffusion barrier
US10714295B2 (en) 2018-09-18 2020-07-14 Kla-Tencor Corporation Metal encapsulated photocathode electron emitter
US11495428B2 (en) * 2019-02-17 2022-11-08 Kla Corporation Plasmonic photocathode emitters at ultraviolet and visible wavelengths
US11217416B2 (en) * 2019-09-27 2022-01-04 Kla Corporation Plasmonic photocathode emitters
US11719652B2 (en) * 2020-02-04 2023-08-08 Kla Corporation Semiconductor metrology and inspection based on an x-ray source with an electron emitter array
US11335529B2 (en) * 2020-06-19 2022-05-17 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Thermally enhanced compound field emitter
US11699564B2 (en) * 2020-10-23 2023-07-11 Nuflare Technology, Inc. Schottky thermal field emitter with integrated beam splitter

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5494179A (en) * 1993-01-22 1996-02-27 Matsushita Electric Industrial Co., Ltd. Field-emitter having a sharp apex and small-apertured gate and method for fabricating emitter
TW440883B (en) * 1995-06-09 2001-06-16 Toshiba Corp Impregnated cathode structure, cathode substrate used for the structure, electron gun structure using the cathode structure, and electron tube
TW200406016A (en) * 2002-10-01 2004-04-16 Hewlett Packard Development Co Tunneling emitter with nanohole openings
US20050092929A1 (en) * 2003-07-08 2005-05-05 Schneiker Conrad W. Integrated sub-nanometer-scale electron beam systems
US20050118807A1 (en) * 2003-11-28 2005-06-02 Hyungiun Kim Ald deposition of ruthenium
CN101105488A (zh) * 2006-07-14 2008-01-16 清华大学 逸出功的测量方法
WO2009060200A1 (en) * 2007-11-10 2009-05-14 Quantum Filament Technologies Limited Improved field emission backplate
US20140055025A1 (en) * 2011-02-25 2014-02-27 Param Corporation Electron gun and electron beam device

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5363021A (en) 1993-07-12 1994-11-08 Cornell Research Foundation, Inc. Massively parallel array cathode
JP3239038B2 (ja) * 1995-04-03 2001-12-17 シャープ株式会社 電界放出型電子源の製造方法
JP3627836B2 (ja) * 1997-06-20 2005-03-09 ソニー株式会社 冷陰極の製造方法
JP3084272B2 (ja) * 1998-12-22 2000-09-04 松下電工株式会社 電界放射型電子源
JP2003288834A (ja) * 2002-03-27 2003-10-10 National Institute Of Advanced Industrial & Technology 電界放出型冷陰極
US7465210B2 (en) 2004-02-25 2008-12-16 The Regents Of The University Of California Method of fabricating carbide and nitride nano electron emitters
US7735147B2 (en) 2005-10-13 2010-06-08 The Regents Of The University Of California Probe system comprising an electric-field-aligned probe tip and method for fabricating the same
KR101159074B1 (ko) * 2006-01-14 2012-06-25 삼성전자주식회사 도전성 탄소나노튜브 팁, 이를 구비한 스캐닝 프로브마이크로스코프의 탐침 및 상기 도전성 탄소나노튜브 팁의제조 방법
CN103367134B (zh) * 2013-08-08 2015-11-11 电子科技大学 一种基于金属钌修饰的多孔硅表面金属电极制备方法
KR101674972B1 (ko) * 2013-12-26 2016-11-10 한국과학기술원 나노 스케일 패터닝 방법 및 이로부터 제조된 전자기기용 집적소자
US9984846B2 (en) 2016-06-30 2018-05-29 Kla-Tencor Corporation High brightness boron-containing electron beam emitters for use in a vacuum environment

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5494179A (en) * 1993-01-22 1996-02-27 Matsushita Electric Industrial Co., Ltd. Field-emitter having a sharp apex and small-apertured gate and method for fabricating emitter
TW440883B (en) * 1995-06-09 2001-06-16 Toshiba Corp Impregnated cathode structure, cathode substrate used for the structure, electron gun structure using the cathode structure, and electron tube
TW200406016A (en) * 2002-10-01 2004-04-16 Hewlett Packard Development Co Tunneling emitter with nanohole openings
US20050092929A1 (en) * 2003-07-08 2005-05-05 Schneiker Conrad W. Integrated sub-nanometer-scale electron beam systems
US20050118807A1 (en) * 2003-11-28 2005-06-02 Hyungiun Kim Ald deposition of ruthenium
CN101105488A (zh) * 2006-07-14 2008-01-16 清华大学 逸出功的测量方法
US7508216B2 (en) * 2006-07-14 2009-03-24 Tsinghua University Method for measuring work function
WO2009060200A1 (en) * 2007-11-10 2009-05-14 Quantum Filament Technologies Limited Improved field emission backplate
US20140055025A1 (en) * 2011-02-25 2014-02-27 Param Corporation Electron gun and electron beam device

Also Published As

Publication number Publication date
CN110291609A (zh) 2019-09-27
KR20190090036A (ko) 2019-07-31
JP6860691B2 (ja) 2021-04-21
TW201830448A (zh) 2018-08-16
JP2020515019A (ja) 2020-05-21
KR102301555B1 (ko) 2021-09-10
US20180174794A1 (en) 2018-06-21
IL267375B (en) 2022-09-01
WO2018118757A1 (en) 2018-06-28
IL267375A (en) 2019-08-29
US10141155B2 (en) 2018-11-27
CN110291609B (zh) 2020-10-27

Similar Documents

Publication Publication Date Title
TWI731202B (zh) 用以電子發射的設備，方法及系統
JP7577162B2 (ja) 電子ビームエミッタの動作方法
US10714294B2 (en) Metal protective layer for electron emitters with a diffusion barrier
US9257257B2 (en) Electron beam control method, electron beam generating apparatus, apparatus using the same, and emitter
JP6999277B2 (ja) 熱電界エミッタチップ、熱電界エミッタチップを含む電子ビーム装置、および電子ビーム装置を動作させる方法
US10607806B2 (en) Silicon electron emitter designs
JP4792404B2 (ja) 電子源の製造方法
WO2018047228A1 (ja) 電子源および電子線照射装置
CN116195023A (zh) 用于发射带电粒子的发射器
JP6377920B2 (ja) 高輝度電子銃、高輝度電子銃を用いるシステム及び高輝度電子銃の動作方法
JP2006032195A (ja) 電子放射源