KR102301555B1 - 루테늄 코팅을 가진 전자 빔 이미터 - Google Patents

루테늄 코팅을 가진 전자 빔 이미터 Download PDF

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KR102301555B1
KR102301555B1 KR1020197021052A KR20197021052A KR102301555B1 KR 102301555 B1 KR102301555 B1 KR 102301555B1 KR 1020197021052 A KR1020197021052 A KR 1020197021052A KR 20197021052 A KR20197021052 A KR 20197021052A KR 102301555 B1 KR102301555 B1 KR 102301555B1
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South Korea
Prior art keywords
protective cap
cap layer
emitter
less
electron beam
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Korean (ko)
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KR20190090036A (ko
Inventor
길다르도 델가도
에드가르도 가르시아
루디 가르시아
프란시스 힐
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케이엘에이 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H01J1/3044—Point emitters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30403—Field emission cathodes characterised by the emitter shape
    • H01J2201/30407—Microengineered point emitters
    • H01J2201/30415—Microengineered point emitters needle shaped
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30403—Field emission cathodes characterised by the emitter shape
    • H01J2201/30426—Coatings on the emitter surface, e.g. with low work function materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30403—Field emission cathodes characterised by the emitter shape
    • H01J2201/30434—Nanotubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/3048—Semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/061—Construction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06308—Thermionic sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06325—Cold-cathode sources
    • H01J2237/06341—Field emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Cold Cathode And The Manufacture (AREA)
KR1020197021052A 2016-12-20 2017-12-18 루테늄 코팅을 가진 전자 빔 이미터 Active KR102301555B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662436925P 2016-12-20 2016-12-20
US62/436,925 2016-12-20
US15/588,006 2017-05-05
US15/588,006 US10141155B2 (en) 2016-12-20 2017-05-05 Electron beam emitters with ruthenium coating
PCT/US2017/066969 WO2018118757A1 (en) 2016-12-20 2017-12-18 Electron beam emitters with ruthenium coating

Publications (2)

Publication Number Publication Date
KR20190090036A KR20190090036A (ko) 2019-07-31
KR102301555B1 true KR102301555B1 (ko) 2021-09-10

Family

ID=62562596

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020197021052A Active KR102301555B1 (ko) 2016-12-20 2017-12-18 루테늄 코팅을 가진 전자 빔 이미터

Country Status (7)

Country Link
US (1) US10141155B2 (enExample)
JP (1) JP6860691B2 (enExample)
KR (1) KR102301555B1 (enExample)
CN (1) CN110291609B (enExample)
IL (1) IL267375B (enExample)
TW (1) TWI731202B (enExample)
WO (1) WO2018118757A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10395884B2 (en) * 2017-10-10 2019-08-27 Kla-Tencor Corporation Ruthenium encapsulated photocathode electron emitter
US10607806B2 (en) 2017-10-10 2020-03-31 Kla-Tencor Corporation Silicon electron emitter designs
US10714294B2 (en) * 2018-05-25 2020-07-14 Kla-Tencor Corporation Metal protective layer for electron emitters with a diffusion barrier
US10714295B2 (en) * 2018-09-18 2020-07-14 Kla-Tencor Corporation Metal encapsulated photocathode electron emitter
US11495428B2 (en) * 2019-02-17 2022-11-08 Kla Corporation Plasmonic photocathode emitters at ultraviolet and visible wavelengths
US11217416B2 (en) * 2019-09-27 2022-01-04 Kla Corporation Plasmonic photocathode emitters
US11719652B2 (en) * 2020-02-04 2023-08-08 Kla Corporation Semiconductor metrology and inspection based on an x-ray source with an electron emitter array
US11335529B2 (en) * 2020-06-19 2022-05-17 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Thermally enhanced compound field emitter
US11699564B2 (en) * 2020-10-23 2023-07-11 Nuflare Technology, Inc. Schottky thermal field emitter with integrated beam splitter

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080012587A1 (en) * 2006-07-14 2008-01-17 Tsinghua University Method for measuring work function

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US5494179A (en) * 1993-01-22 1996-02-27 Matsushita Electric Industrial Co., Ltd. Field-emitter having a sharp apex and small-apertured gate and method for fabricating emitter
US5363021A (en) 1993-07-12 1994-11-08 Cornell Research Foundation, Inc. Massively parallel array cathode
JP3239038B2 (ja) * 1995-04-03 2001-12-17 シャープ株式会社 電界放出型電子源の製造方法
EP0831512A4 (en) * 1995-06-09 1999-02-10 Toshiba Kk STORAGE CATHODE STRUCTURE, CATHODE SUBSTRATE FOR THIS STRUCTURE, ELECTRONIC CANNON STRUCTURE USING THIS STRUCTURE AND ELECTRON TUBE
JP3627836B2 (ja) * 1997-06-20 2005-03-09 ソニー株式会社 冷陰極の製造方法
JP3084272B2 (ja) * 1998-12-22 2000-09-04 松下電工株式会社 電界放射型電子源
US6911768B2 (en) * 2001-04-30 2005-06-28 Hewlett-Packard Development Company, L.P. Tunneling emitter with nanohole openings
JP2003288834A (ja) * 2002-03-27 2003-10-10 National Institute Of Advanced Industrial & Technology 電界放出型冷陰極
US7279686B2 (en) 2003-07-08 2007-10-09 Biomed Solutions, Llc Integrated sub-nanometer-scale electron beam systems
US7074719B2 (en) * 2003-11-28 2006-07-11 International Business Machines Corporation ALD deposition of ruthenium
US7465210B2 (en) 2004-02-25 2008-12-16 The Regents Of The University Of California Method of fabricating carbide and nitride nano electron emitters
US7735147B2 (en) 2005-10-13 2010-06-08 The Regents Of The University Of California Probe system comprising an electric-field-aligned probe tip and method for fabricating the same
KR101159074B1 (ko) * 2006-01-14 2012-06-25 삼성전자주식회사 도전성 탄소나노튜브 팁, 이를 구비한 스캐닝 프로브마이크로스코프의 탐침 및 상기 도전성 탄소나노튜브 팁의제조 방법
GB0722120D0 (en) * 2007-11-10 2007-12-19 Quantum Filament Technologies Improved field emission backplate
JP5525104B2 (ja) 2011-02-25 2014-06-18 株式会社Ｐａｒａｍ 電子銃および電子ビーム装置
CN103367134B (zh) * 2013-08-08 2015-11-11 电子科技大学 一种基于金属钌修饰的多孔硅表面金属电极制备方法
KR101674972B1 (ko) * 2013-12-26 2016-11-10 한국과학기술원 나노 스케일 패터닝 방법 및 이로부터 제조된 전자기기용 집적소자
US9984846B2 (en) 2016-06-30 2018-05-29 Kla-Tencor Corporation High brightness boron-containing electron beam emitters for use in a vacuum environment

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080012587A1 (en) * 2006-07-14 2008-01-17 Tsinghua University Method for measuring work function

Also Published As

Publication number Publication date
US10141155B2 (en) 2018-11-27
JP6860691B2 (ja) 2021-04-21
KR20190090036A (ko) 2019-07-31
JP2020515019A (ja) 2020-05-21
TWI731202B (zh) 2021-06-21
TW201830448A (zh) 2018-08-16
WO2018118757A1 (en) 2018-06-28
US20180174794A1 (en) 2018-06-21
IL267375B (en) 2022-09-01
CN110291609B (zh) 2020-10-27
CN110291609A (zh) 2019-09-27
IL267375A (en) 2019-08-29

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