JP6937310B2 - 電子源および電子線照射装置 - Google Patents
電子源および電子線照射装置 Download PDFInfo
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- JP6937310B2 JP6937310B2 JP2018537899A JP2018537899A JP6937310B2 JP 6937310 B2 JP6937310 B2 JP 6937310B2 JP 2018537899 A JP2018537899 A JP 2018537899A JP 2018537899 A JP2018537899 A JP 2018537899A JP 6937310 B2 JP6937310 B2 JP 6937310B2
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- 238000010894 electron beam technology Methods 0.000 title claims description 64
- 239000000463 material Substances 0.000 claims description 60
- 150000001875 compounds Chemical class 0.000 claims description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 11
- 229910052799 carbon Inorganic materials 0.000 claims description 11
- 239000000470 constituent Substances 0.000 claims description 10
- 230000001678 irradiating effect Effects 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052800 carbon group element Inorganic materials 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 238000000605 extraction Methods 0.000 description 39
- 239000013078 crystal Substances 0.000 description 27
- 239000000523 sample Substances 0.000 description 24
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 23
- 239000011248 coating agent Substances 0.000 description 18
- 238000000576 coating method Methods 0.000 description 15
- 238000001878 scanning electron micrograph Methods 0.000 description 15
- 238000005259 measurement Methods 0.000 description 12
- 229910003481 amorphous carbon Inorganic materials 0.000 description 11
- 230000005684 electric field Effects 0.000 description 11
- 229910052721 tungsten Inorganic materials 0.000 description 11
- 230000005855 radiation Effects 0.000 description 10
- 239000010937 tungsten Substances 0.000 description 10
- 238000004458 analytical method Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
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- 238000009826 distribution Methods 0.000 description 7
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- 230000001133 acceleration Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000003384 imaging method Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 238000002524 electron diffraction data Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229920000620 organic polymer Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000010000 carbonizing Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000012811 non-conductive material Substances 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000012472 biological sample Substances 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000001198 high resolution scanning electron microscopy Methods 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000013501 sustainable material Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/06—Electron sources; Electron guns
- H01J37/065—Construction of guns or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/06—Electron sources; Electron guns
- H01J37/073—Electron guns using field emission, photo emission, or secondary emission electron sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/06—Electron sources; Electron guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30403—Field emission cathodes characterised by the emitter shape
- H01J2201/30407—Microengineered point emitters
- H01J2201/30415—Microengineered point emitters needle shaped
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30446—Field emission cathodes characterised by the emitter material
- H01J2201/30453—Carbon types
- H01J2201/30473—Amorphous carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/063—Electron sources
- H01J2237/06308—Thermionic sources
- H01J2237/06316—Schottky emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/063—Electron sources
- H01J2237/06325—Cold-cathode sources
- H01J2237/06341—Field emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/065—Source emittance characteristics
- H01J2237/0656—Density
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/2448—Secondary particle detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/24485—Energy spectrometers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24571—Measurements of non-electric or non-magnetic variables
- H01J2237/24578—Spatial variables, e.g. position, distance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2809—Scanning microscopes characterised by the imaging problems involved
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
- Cold Cathode And The Manufacture (AREA)
Description
先端に凸状曲面の電子放出面を有し、少なくとも前記電子放出面の表面が非晶質材料で構成されたワイヤ状部材を有することを特徴とする電子源とする。
導電性材料を構成要素とするワイヤ状の母材および前記母材の先端に形成され非晶質材料を構成要素とし凸状曲面の電子放出面となる表面材を有する電子源と、
前記電子源から引き出された一次電子を試料に照射する電子光学系と、
を有することを特徴とする電子線照射装置とする。
導電性の非晶質材料を構成要素とし先端が凸状曲面の電子放出面となるワイヤ状部材を有する電子源と、
前記電子源から引き出された一次電子を試料に照射する電子光学系と、
を有することを特徴とする電子線照射装置とする。
Claims (9)
- 導電性材料を構成要素とするワイヤ状の母材および前記母材の先端に形成され非晶質材料を構成要素とし凸状曲面の電子放出面となる表面材を有する電子源と、
前記電子源から引き出された一次電子を試料に照射する電子光学系と、
を有し、
前記表面材は、膜厚が10nm以上、5μm以下であり、
前記表面材は、炭素含有化合物を構成要素とする
ことを特徴とする電子線照射装置。 - 請求項1記載の電子線照射装置において、
凸状曲面の前記電子放出面は、前記電子放出面の中心から離れるに従い曲面の曲率半径が大きくなることを特徴とする電子線照射装置。 - 請求項1記載の電子線照射装置において、
前記母材は、融点が1500度以上の高融点金属であることを特徴とする電子線照射装置。 - 導電性材料を構成要素とするワイヤ状の母材および前記母材の先端に形成され非晶質材料を構成要素とし凸状曲面の電子放出面となる表面材を有する電子源と、
前記電子源から引き出された一次電子を試料に照射する電子光学系と、
を有し、
前記表面材は、膜厚が10nm以上、5μm以下であり、
前記非晶質材料は、14族元素、炭素含有化合物、13族と15族との化合物、或いはガラスを構成要素とすることを特徴とする電子線照射装置。 - 請求項1記載の電子線照射装置において、
前記一次電子が前記試料に照射されることにより発生する二次電子を検出する検出器を更に有することを特徴とする電子線照射装置。 - 請求項1記載の電子線照射装置において、
前記一次電子が前記試料に照射されることにより発生する二次電子のエネルギーを分析するための分光器を更に有することを特徴とする電子線照射装置。 - 請求項1記載の電子線照射装置において、
前記一次電子が前記試料に照射されることにより発生する二次電子の回折パターンを測定するための検出器を更に有することを特徴とする電子線照射装置。 - 先端に凸状曲面の電子放出面を有し、少なくとも前記電子放出面の表面が非晶質材料で構成されたワイヤ状部材を有し、
前記ワイヤ状部材は、導電性材料を構成要素とする母材と、前記電子放出面に形成され膜厚が10nm以上、5μm以下の非晶質材料を構成要素とする表面材と、を有し、
前記非晶質材料は、14族元素、炭素含有化合物、13族と15族との化合物、或いはガラスを構成要素とする
ことを特徴とする電子源。 - 請求項8記載の電子源において、
凸状曲面の前記電子放出面は、前記電子放出面の中心から離れるに従い曲面の曲率半径が大きくなることを特徴とする電子源。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2016/076146 WO2018047228A1 (ja) | 2016-09-06 | 2016-09-06 | 電子源および電子線照射装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2018047228A1 JPWO2018047228A1 (ja) | 2019-07-04 |
JP6937310B2 true JP6937310B2 (ja) | 2021-09-22 |
Family
ID=61561983
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JP2018537899A Active JP6937310B2 (ja) | 2016-09-06 | 2016-09-06 | 電子源および電子線照射装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20190198284A1 (ja) |
JP (1) | JP6937310B2 (ja) |
KR (1) | KR102374925B1 (ja) |
WO (1) | WO2018047228A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2018029018A1 (en) | 2016-08-08 | 2018-02-15 | Asml Netherlands B.V. | Electron emitter and method of fabricating same |
US10748737B2 (en) * | 2017-10-10 | 2020-08-18 | Kla-Tencor Corporation | Electron beam generation and measurement |
US11823862B2 (en) * | 2021-12-29 | 2023-11-21 | Nuflare Technology, Inc. | Method and apparatus for usable beam current and brightness in Schottky thermal field emission (TFE) |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0778581A (ja) * | 1993-09-07 | 1995-03-20 | Hitachi Ltd | 単色化電子線源およびその製造方法 |
JP2001167726A (ja) * | 1999-12-09 | 2001-06-22 | Jeol Ltd | 仕事関数像生成装置 |
JP2005276498A (ja) * | 2004-03-23 | 2005-10-06 | Fuji Xerox Co Ltd | 電子線発生素子とその製造方法 |
WO2006135092A1 (ja) * | 2005-06-17 | 2006-12-21 | Sumitomo Electric Industries, Ltd. | ダイヤモンド電子放射陰極、電子放射源、電子顕微鏡及び電子ビーム露光機 |
US7939800B2 (en) * | 2005-10-19 | 2011-05-10 | ICT, Integrated Circuit Testing, Gesellschaft fur Halbleiterpruftechnik mbH | Arrangement and method for compensating emitter tip vibrations |
GB2453302B (en) * | 2006-06-30 | 2012-04-18 | Shimadzu Corp | Electron beam generating apparatus and methods of forming an emitter |
JP4888128B2 (ja) | 2007-01-18 | 2012-02-29 | 住友電気工業株式会社 | 電子源用チップ及びその製造方法 |
US20090078561A1 (en) * | 2007-07-30 | 2009-03-26 | Kenneth Boh Khin Teo | Apparatus and Methods for Growing Nanofibres and Nanotips |
DE102008049654B4 (de) * | 2008-09-30 | 2024-08-01 | Carl Zeiss Microscopy Gmbh | Elektronenstrahlquelle, Elektronenstrahlsystem mit derselben, Verfahren zur Herstellung der Elektronenstrahlquelle sowie deren Verwendung |
US20110294071A1 (en) * | 2010-05-28 | 2011-12-01 | Canon Kabushiki Kaisha | Electron gun, lithography apparatus, method of manufacturing article, and electron beam apparatus |
JP5473891B2 (ja) * | 2010-12-27 | 2014-04-16 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置及び試料作製方法 |
US9070527B2 (en) * | 2011-02-25 | 2015-06-30 | Param Corporation | Electron gun and electron beam device |
US8536773B2 (en) * | 2011-03-30 | 2013-09-17 | Carl Zeiss Microscopy Gmbh | Electron beam source and method of manufacturing the same |
CN102842474B (zh) * | 2011-06-22 | 2015-11-25 | 中国电子科技集团公司第三十八研究所 | 粒子源及其制造方法 |
CN102629538B (zh) * | 2012-04-13 | 2014-03-19 | 吴江炀晟阴极材料有限公司 | 具有低逸出功和高化学稳定性的电极材料 |
US9799484B2 (en) * | 2014-12-09 | 2017-10-24 | Hermes Microvision, Inc. | Charged particle source |
-
2016
- 2016-09-06 WO PCT/JP2016/076146 patent/WO2018047228A1/ja active Application Filing
- 2016-09-06 US US16/328,150 patent/US20190198284A1/en not_active Abandoned
- 2016-09-06 JP JP2018537899A patent/JP6937310B2/ja active Active
- 2016-09-06 KR KR1020197005128A patent/KR102374925B1/ko active IP Right Grant
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US20190198284A1 (en) | 2019-06-27 |
KR20190028547A (ko) | 2019-03-18 |
KR102374925B1 (ko) | 2022-03-16 |
WO2018047228A1 (ja) | 2018-03-15 |
JPWO2018047228A1 (ja) | 2019-07-04 |
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