JP6860691B2 - ルテニウム被覆を有する電子ビーム放出器 - Google Patents
ルテニウム被覆を有する電子ビーム放出器 Download PDFInfo
- Publication number
- JP6860691B2 JP6860691B2 JP2019554476A JP2019554476A JP6860691B2 JP 6860691 B2 JP6860691 B2 JP 6860691B2 JP 2019554476 A JP2019554476 A JP 2019554476A JP 2019554476 A JP2019554476 A JP 2019554476A JP 6860691 B2 JP6860691 B2 JP 6860691B2
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- protective cap
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- emitter
- silicon emitter
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- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000010894 electron beam technology Methods 0.000 title claims description 44
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 title claims description 25
- 229910052707 ruthenium Inorganic materials 0.000 title claims description 25
- 239000011248 coating agent Substances 0.000 title description 3
- 238000000576 coating method Methods 0.000 title description 3
- 230000001681 protective effect Effects 0.000 claims description 97
- 238000000034 method Methods 0.000 claims description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 23
- 229910052710 silicon Inorganic materials 0.000 claims description 23
- 239000010703 silicon Substances 0.000 claims description 23
- 230000002829 reductive effect Effects 0.000 claims description 21
- 230000005684 electric field Effects 0.000 claims description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 15
- 229910052799 carbon Inorganic materials 0.000 claims description 14
- 238000004544 sputter deposition Methods 0.000 claims description 11
- 230000007547 defect Effects 0.000 claims description 8
- 238000000231 atomic layer deposition Methods 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 238000012856 packing Methods 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 3
- -1 oxides Chemical compound 0.000 claims description 3
- 239000011591 potassium Substances 0.000 claims description 3
- 229910052700 potassium Inorganic materials 0.000 claims description 3
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
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- 238000001755 magnetron sputter deposition Methods 0.000 description 1
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- 238000004627 transmission electron microscopy Methods 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/06—Electron sources; Electron guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
- H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
- H01J1/3044—Point emitters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30403—Field emission cathodes characterised by the emitter shape
- H01J2201/30407—Microengineered point emitters
- H01J2201/30415—Microengineered point emitters needle shaped
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30403—Field emission cathodes characterised by the emitter shape
- H01J2201/30426—Coatings on the emitter surface, e.g. with low work function materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30403—Field emission cathodes characterised by the emitter shape
- H01J2201/30434—Nanotubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30446—Field emission cathodes characterised by the emitter material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30446—Field emission cathodes characterised by the emitter material
- H01J2201/3048—Semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/061—Construction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/063—Electron sources
- H01J2237/06308—Thermionic sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/063—Electron sources
- H01J2237/06325—Cold-cathode sources
- H01J2237/06341—Field emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2813—Scanning microscopes characterised by the application
- H01J2237/2817—Pattern inspection
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
- Cold Cathode And The Manufacture (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662436925P | 2016-12-20 | 2016-12-20 | |
| US62/436,925 | 2016-12-20 | ||
| US15/588,006 | 2017-05-05 | ||
| US15/588,006 US10141155B2 (en) | 2016-12-20 | 2017-05-05 | Electron beam emitters with ruthenium coating |
| PCT/US2017/066969 WO2018118757A1 (en) | 2016-12-20 | 2017-12-18 | Electron beam emitters with ruthenium coating |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020515019A JP2020515019A (ja) | 2020-05-21 |
| JP2020515019A5 JP2020515019A5 (enExample) | 2021-02-04 |
| JP6860691B2 true JP6860691B2 (ja) | 2021-04-21 |
Family
ID=62562596
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019554476A Active JP6860691B2 (ja) | 2016-12-20 | 2017-12-18 | ルテニウム被覆を有する電子ビーム放出器 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10141155B2 (enExample) |
| JP (1) | JP6860691B2 (enExample) |
| KR (1) | KR102301555B1 (enExample) |
| CN (1) | CN110291609B (enExample) |
| IL (1) | IL267375B (enExample) |
| TW (1) | TWI731202B (enExample) |
| WO (1) | WO2018118757A1 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10607806B2 (en) | 2017-10-10 | 2020-03-31 | Kla-Tencor Corporation | Silicon electron emitter designs |
| US10395884B2 (en) | 2017-10-10 | 2019-08-27 | Kla-Tencor Corporation | Ruthenium encapsulated photocathode electron emitter |
| US10714294B2 (en) | 2018-05-25 | 2020-07-14 | Kla-Tencor Corporation | Metal protective layer for electron emitters with a diffusion barrier |
| US10714295B2 (en) | 2018-09-18 | 2020-07-14 | Kla-Tencor Corporation | Metal encapsulated photocathode electron emitter |
| US11495428B2 (en) * | 2019-02-17 | 2022-11-08 | Kla Corporation | Plasmonic photocathode emitters at ultraviolet and visible wavelengths |
| US11217416B2 (en) * | 2019-09-27 | 2022-01-04 | Kla Corporation | Plasmonic photocathode emitters |
| US11719652B2 (en) * | 2020-02-04 | 2023-08-08 | Kla Corporation | Semiconductor metrology and inspection based on an x-ray source with an electron emitter array |
| US11335529B2 (en) * | 2020-06-19 | 2022-05-17 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Thermally enhanced compound field emitter |
| US11699564B2 (en) * | 2020-10-23 | 2023-07-11 | Nuflare Technology, Inc. | Schottky thermal field emitter with integrated beam splitter |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5363021A (en) | 1993-07-12 | 1994-11-08 | Cornell Research Foundation, Inc. | Massively parallel array cathode |
| EP0637050B1 (en) * | 1993-07-16 | 1999-12-22 | Matsushita Electric Industrial Co., Ltd. | A method of fabricating a field emitter |
| JP3239038B2 (ja) * | 1995-04-03 | 2001-12-17 | シャープ株式会社 | 電界放出型電子源の製造方法 |
| PL324090A1 (en) * | 1995-06-09 | 1998-05-11 | Toshiba Kk | Impregnated-type cathode asembly, cathode substrate used in that assembly, electron gun incorporating that cathode assembly and electron and electron valve incorporating that cathode assembly |
| JP3627836B2 (ja) * | 1997-06-20 | 2005-03-09 | ソニー株式会社 | 冷陰極の製造方法 |
| JP3084272B2 (ja) * | 1998-12-22 | 2000-09-04 | 松下電工株式会社 | 電界放射型電子源 |
| US6911768B2 (en) * | 2001-04-30 | 2005-06-28 | Hewlett-Packard Development Company, L.P. | Tunneling emitter with nanohole openings |
| JP2003288834A (ja) * | 2002-03-27 | 2003-10-10 | National Institute Of Advanced Industrial & Technology | 電界放出型冷陰極 |
| US7279686B2 (en) | 2003-07-08 | 2007-10-09 | Biomed Solutions, Llc | Integrated sub-nanometer-scale electron beam systems |
| US7074719B2 (en) * | 2003-11-28 | 2006-07-11 | International Business Machines Corporation | ALD deposition of ruthenium |
| US7465210B2 (en) | 2004-02-25 | 2008-12-16 | The Regents Of The University Of California | Method of fabricating carbide and nitride nano electron emitters |
| US7735147B2 (en) | 2005-10-13 | 2010-06-08 | The Regents Of The University Of California | Probe system comprising an electric-field-aligned probe tip and method for fabricating the same |
| KR101159074B1 (ko) * | 2006-01-14 | 2012-06-25 | 삼성전자주식회사 | 도전성 탄소나노튜브 팁, 이를 구비한 스캐닝 프로브마이크로스코프의 탐침 및 상기 도전성 탄소나노튜브 팁의제조 방법 |
| CN101105488B (zh) * | 2006-07-14 | 2011-01-26 | 鸿富锦精密工业（深圳）有限公司 | 逸出功的测量方法 |
| GB0722120D0 (en) * | 2007-11-10 | 2007-12-19 | Quantum Filament Technologies | Improved field emission backplate |
| WO2012114521A1 (ja) | 2011-02-25 | 2012-08-30 | 株式会社Ｐａｒａｍ | 電子銃および電子ビーム装置 |
| CN103367134B (zh) * | 2013-08-08 | 2015-11-11 | 电子科技大学 | 一种基于金属钌修饰的多孔硅表面金属电极制备方法 |
| KR101674972B1 (ko) * | 2013-12-26 | 2016-11-10 | 한국과학기술원 | 나노 스케일 패터닝 방법 및 이로부터 제조된 전자기기용 집적소자 |
| US9984846B2 (en) | 2016-06-30 | 2018-05-29 | Kla-Tencor Corporation | High brightness boron-containing electron beam emitters for use in a vacuum environment |
-
2017
- 2017-05-05 US US15/588,006 patent/US10141155B2/en not_active Expired - Fee Related
- 2017-12-18 JP JP2019554476A patent/JP6860691B2/ja active Active
- 2017-12-18 CN CN201780086182.0A patent/CN110291609B/zh active Active
- 2017-12-18 IL IL267375A patent/IL267375B/en unknown
- 2017-12-18 KR KR1020197021052A patent/KR102301555B1/ko active Active
- 2017-12-18 WO PCT/US2017/066969 patent/WO2018118757A1/en not_active Ceased
- 2017-12-19 TW TW106144496A patent/TWI731202B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| CN110291609A (zh) | 2019-09-27 |
| KR20190090036A (ko) | 2019-07-31 |
| TW201830448A (zh) | 2018-08-16 |
| JP2020515019A (ja) | 2020-05-21 |
| KR102301555B1 (ko) | 2021-09-10 |
| US20180174794A1 (en) | 2018-06-21 |
| TWI731202B (zh) | 2021-06-21 |
| IL267375B (en) | 2022-09-01 |
| WO2018118757A1 (en) | 2018-06-28 |
| IL267375A (en) | 2019-08-29 |
| US10141155B2 (en) | 2018-11-27 |
| CN110291609B (zh) | 2020-10-27 |
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