JP2020504457A - 低温窒化ケイ素膜のための方法及び装置 - Google Patents
低温窒化ケイ素膜のための方法及び装置 Download PDFInfo
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Abstract
Description
Claims (15)
- 窒化ケイ素膜の形成方法であって、
その上に金属層を有する基板を提供することと、
金属表面をケイ素前駆体に曝露して、前記金属表面にケイ素含有膜を形成することと、
前記ケイ素含有膜を窒素含有反応物に曝露し、基板表面の上に窒化ケイ素膜を形成することと、
前記基板表面の上の前記窒化ケイ素膜を水素含有プラズマに曝露して、低エッチング窒化ケイ素膜を形成することと
を含み、
約250℃以下の温度で実行される方法。 - 前記金属層がコバルトを含む、請求項1に記載の処理方法。
- 前記水素含有プラズマが本質的に水素からなる、請求項1に記載の処理方法。
- 前記水素含有プラズマが、窒素原子及びアルゴン原子のうちの1つ又は複数を更に含む、請求項1に記載の処理方法。
- 前記水素含有プラズマが、原子ベースで1−99%の水素を含む、請求項4に記載の処理方法。
- 前記水素含有プラズマが、原子ベースで約50%以上の水素を含む、請求項5に記載の処理方法。
- 前記窒化ケイ素膜を窒素プラズマに曝露することを更に含む、請求項1に記載の処理方法。
- 前記窒素プラズマに曝露することが、前記水素含有プラズマに曝露する前に起こる、請求項7に記載の処理方法。
- 前記窒素プラズマに曝露することが、前記水素含有プラズマに曝露した後に起こる、請求項7に記載の処理方法。
- 前記窒素プラズマが、窒素原子とアルゴン原子との混合物を含む、請求項7に記載の処理方法。
- 前記水素含有プラズマが垂直プラズマ源で生成される、請求項1に記載の処理方法。
- 前記垂直プラズマ源が20MHzを超える周波数で動作する、請求項11に記載の処理方法。
- 前記ケイ素前駆体、前記窒素含有反応物及び前記水素含有プラズマへの曝露を繰り返して、所定の厚さの低エッチング窒化ケイ素膜を形成することを更に含む、請求項1に記載の処理方法。
- 前記所定の厚さの前記低エッチング窒化ケイ素膜が形成された後に、前記金属層への損傷が実質的にない、請求項13に記載の処理方法。
- 前記低エッチング窒化ケイ素膜が、1:100のHF:H2Oで約2Å/分以下のエッチング速度を有する、請求項14に記載の処理方法。
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US201762446276P | 2017-01-13 | 2017-01-13 | |
US62/446,276 | 2017-01-13 | ||
PCT/US2018/013320 WO2018132568A1 (en) | 2017-01-13 | 2018-01-11 | Methods and apparatus for low temperature silicon nitride films |
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CN (1) | CN110178201B (ja) |
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TWI663281B (zh) | 2015-06-16 | 2019-06-21 | 美商慧盛材料美國責任有限公司 | 鹵代矽烷化合物的製備方法、組合物及含有其的容器 |
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US11017997B2 (en) | 2021-05-25 |
CN110178201A (zh) | 2019-08-27 |
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TW201839799A (zh) | 2018-11-01 |
US20210265157A1 (en) | 2021-08-26 |
US20190348271A1 (en) | 2019-11-14 |
TWI745528B (zh) | 2021-11-11 |
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KR102335188B1 (ko) | 2021-12-02 |
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